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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Diffusion Bonding of Silicon Carbide for MEMS-LDI Applications

A robust joining approach is critically needed for a Micro-Electro-Mechanical Systems-Lean Direct Injector (MEMS-LDI) application which requires leak free joints with high temperature mechanical capability. Diffusion bonding is well suited for the MEMS-LDI application. Diffusion bonds were fabricated using titanium interlayers between silicon carbide substrates during hot pressing. The interlayers consisted of either alloyed titanium foil or physically vapor deposited (PVD) titanium coatings. Microscopy shows that well adhered, crack free diffusion bonds are formed under optimal conditions. Under less than optimal conditions, microcracks are present in the bond layer due to the formation of intermetallic phases. Electron microprobe analysis was used to identify the reaction formed phases in the diffusion bond. Various compatibility issues among the phases in the interlayer and substrate are discussed. Also, the effects of temperature, pressure, time, silicon carbide substrate type, and type of titanium interlayer and thickness on the microstructure and composition of joints are discussed.

Halbig, Michael C.↗
NASA NTRS2000

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Barnard, Thomas Duncan↗
NASA NTRS2001

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Barnard, Thomas Duncan↗
NASA NTRS1990

Converting a carbon preform object to a silicon carbide object

A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.

Levin, Harry↗
NASA NTRS1989

Process for coating an object with silicon carbide

A process for coating a carbon or graphite object with silicon carbide by contacting it with silicon liquid and vapor over various lengths of contact time. In the process, a stream of silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a co-reactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into a reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. The precursor gas is decomposed directly to silicon in the reaction chamber. A stream of any decomposition gas and any unreacted precursor gas from said reaction chamber is removed. The object within the reaction chamber is then contacted with silicon, and recovered after it has been coated with silicon carbide.

Levin, Harry↗
NASA NTRS2013

Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFET

Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.

thermal cycling tests↗
NASA NTRS2015

Single-Event Effects in Silicon Carbide Power Devices

This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

heavy-ion single-event effects↗
NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS2015

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

Power↗
NASA NTRS2015

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources - a nominal 300-Volt high voltage input bus and a nominal 28-Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power supplies that provide power to the thruster auxiliary supplies, and two parallel 7.5 kilowatt power supplies that are capable of providing up to 15 kilowatts of total power at 300-Volts to 500-Volts to the thruster discharge supply. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall Effect Thruster. The performance of unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate the exceptional performance with full power efficiencies exceeding 97. With a space-qualified silicon carbide or similar high voltage, high efficiency power device, this design could evolve into a flight design for future missions that require high power electric propulsion systems.

Technology↗
NASA NTRS2015

High Temperature Joining and Characterization of Joint Properties in Silicon Carbide-Based Composite Materials

Advanced silicon carbide-based ceramics and composites are being developed for a wide variety of high temperature extreme environment applications. Robust high temperature joining and integration technologies are enabling for the fabrication and manufacturing of large and complex shaped components. The development of a new joining approach called SET (Single-step Elevated Temperature) joining will be described along with the overview of previously developed joining approaches including high temperature brazing, ARCJoinT (Affordable, Robust Ceramic Joining Technology), diffusion bonding, and REABOND (Refractory Eutectic Assisted Bonding). Unlike other approaches, SET joining does not have any lower temperature phases and will therefore have a use temperature above 1315C. Optimization of the composition for full conversion to silicon carbide will be discussed. The goal is to find a composition with no remaining carbon or free silicon. Green tape interlayers were developed for joining. Microstructural analysis and preliminary mechanical tests of the joints will be presented.

Joining↗
NASA NTRSDate not supplied

Refractory Carbides for Hydrogen Erosion Resistance in Carbon Tubes for Nuclear Thermal Propulsion

As crewed travel becomes more common to the Moon and beyond, space nuclear propulsion-based craft offer reduced travel times and double the specific impulse compared to conventional chemical rockets. The nuclear core and its integral hydrogen propellant channels will require advanced refractory carbide coatings over a carbon/carbon substrate for hydrogen resistance. Using ab initio and other computational techniques, we studied select (Zr/Ta/Nb)C mixed carbide systems for erosion resistance and hydrogen diffusion using realistic levels of carbon vacancies and experimentally obtainable stoichiometries. Various contributions to the formation and hydrogen erosion free energies were calculated, including configurational, electronic, and vibrational terms. Our calculations indicate that ZrC is less likely to lose carbon than NbC or TaC, providing an explanation for heritage NERVA data on ZrC and NbC mass loss performance. Additionally, binary mixtures show compositions that are more stable than their end-member counterparts. Hydrogen diffusion in stoichiometric ZrC was found to be slightly higher than previously theorized, with the caveat that hydrogen saturation of carbon vacancies will hinder further hydrogen diffusion through the bulk, while hydrogen diffusion in ZrNbC is slightly enhanced over ZrC. And finally, we show that as carbon is depleted, the deformation mechanism of ZrC changes from brittle to ductile. Though many questions still remain as to the bulk performance of these materials, these trends and results are important in terms of materials selection efforts for hydrogen-resistant coatings on carbon/carbon substrates.

William C Tucker↗
NASA NTRSDate not supplied

Refractory Carbides for Hydrogen Erosion Resistance in Carbon Tubes for Nuclear Thermal Propulsion

As crewed travel becomes more common to the Moon and beyond, space nuclear propulsion-based craft offer reduced travel times and double the specific impulse compared to conventional chemical rockets. The nuclear core and its integral hydrogen propellant channels will require advanced refractory carbide coatings over a carbon/carbon substrate for hydrogen resistance. Using \textit{ab initio} and other computational techniques, we studied select (Zr/Ta/Nb)C mixed carbide systems for erosion resistance and hydrogen diffusion using realistic levels of carbon vacancies and experimentally obtainable stoichiometries. Various contributions to the formation and hydrogen erosion free energies were calculated, including configurational, electronic, and vibrational terms. Our calculations indicate that ZrC is less likely to lose carbon than NbC or TaC, providing an explanation for heritage NERVA data on ZrC and NbC mass loss performance. Additionally, binary mixtures show compositions that are more stable than their end-member counterparts. Hydrogen diffusion in stoichiometric ZrC was found to be slightly higher than previously theorized, with the caveat that hydrogen saturation of carbon vacancies will hinder further hydrogen diffusion through the bulk, while hydrogen diffusion in ZrNbC is slightly enhanced over ZrC. And finally, we show that as carbon is depleted, the deformation mechanism of ZrC changes from brittle to ductile. Though many questions still remain as to the bulk performance of these materials, these trends and results are important in terms of materials selection efforts for hydrogen-resistant coatings on carbon/carbon substrates.

William C. Tucker↗
NASA NTRSDate not supplied

Refractory Carbides for Hydrogen Erosion Resistance in Carbon Tubes for Nuclear Thermal Propulsion

As crewed travel becomes more common to the Moon and beyond, space nuclear propulsion-based craft offer reduced travel times and double the specific impulse compared to conventional chemical rockets. The nuclear core and its integral hydrogen propellant channels will require advanced refractory carbide coatings over a carbon/carbon substrate for hydrogen resistance. Using ab initio and other computational techniques, we studied select (Zr/Ta/Nb)C mixed carbide systems for erosion resistance and hydrogen diffusion using realistic levels of carbon vacancies and experimentally obtainable stoichiometries. Various contributions to the formation and hydrogen erosion free energies were calculated, including configurational, electronic, and vibrational terms. Our calculations indicate that ZrC is less likely to lose carbon than NbC or TaC, providing an explanation for heritage NERVA data on ZrC and NbC mass loss performance. Additionally, binary mixtures show compositions that are more stable than their end-member counterparts. Hydrogen diffusion in stoichiometric ZrC was found to be slightly higher than previously theorized, with the caveat that hydrogen saturation of carbon vacancies will hinder further hydrogen diffusion through the bulk, while hydrogen diffusion in ZrNbC is slightly enhanced over ZrC. And finally, we show that as carbon is depleted, the deformation mechanism of ZrC changes from brittle to ductile. Though many questions still remain as to the bulk performance of these materials, these trends and results are important in terms of materials selection efforts for hydrogen-resistant coatings on carbon/carbon substrates.

William C Tucker↗
NASA NTRS2023

Mitigating Space Radiation Using Magnesium(-Lithium) and Boron Carbide Composites

The health effects of galactic cosmic radiation are a serious impediment to crewed exploration of the solar system. OLTARIS, an interface for the 3DHZETRN deterministic radiation transport code, was used to assess the response of aerospace materials to this constant radiation exposure. Traditional aerospace structural materials like aluminum can, after a certain mass, increase the health effects of such radiation. However, materials with lower atomic mass may mitigate this build-up in secondary radiation with increasing areal density. As such, lower atomic mass structural alloys of magnesium and magnesium–lithium are promising candidates. These alloys may reduce the mass of structures when substituted for aluminum alloys. Reinforcement with boron carbide could further reduce atomic mass while also improving the mechanical properties of such lightweight alloys. This study found that the lower atomic mass of these materials increased nuclear fragmentation upon cosmic radiation interactions, leading to a softening of the secondary (neutron) radiation spectra. This softened spectra reduced the effective dose equivalent, a measure of health effects, for magnesium(-lithium) alloys and their boron carbide-reinforced composites when compared to aluminum.

Galactic cosmic radiation↗
NASA NTRSDate not supplied

Advanced Materials for the Lunar Surface: Multiscale Computational Design of Refractory Alloys and Carbides

Emerging operational environments, such as the lunar surface, present novel challenges for NASA and drive the need for advanced materials in applications like fission surface power systems. To address these demands, computational materials science is rapidly evolving to augment or replace costly and hazardous empirical testing. Although materials selection at NASA remains predominantly experimentally driven, advanced simulation methodologies are being steadily integrated into the engineering lifecycle. This work details the application of multiscale simulation techniques—including first-principles calculations, CALPHAD, dislocation dynamics, and molecular dynamics—at NASA's Ames Research Center to evaluate advanced materials for extreme environments. First, we present contributions to the Space Nuclear Propulsion Project. Be-cause propellant channel coatings in nuclear thermal rockets must withstand high-pressure, high-temperature hydro-gen, optimizing these materials is critical. First-principles calculations were employed to establish a rigorous quantitative and qualitative understanding of the behavior of the refractory carbides ZrC, NbC, and their mixtures in high-enthalpy hydrogen environments. This necessitated the generation of high-fidelity thermodynamic models for both stoichiometric and carbon-depleted carbides, both with and without the presence of hydrogen. Furthermore, we highlight efforts under the Refractory Alloy Additive Manufacturing Build Optimization (RAAMBO) project, where existing and novel alloy compositions were assessed for additive manufacturing printability and subsequent performance in applications such as heat pipes and rocket nozzle extensions. This was accomplished through a comprehensive multiscale simulation framework that bridged the gap from the nanometer to the millimeter scale. Across both initiatives, rigorous validation against empirical data was prioritized. By systematically employing a verified and validated computational frame-work, we demonstrate how simulation effectively supports multidisciplinary engineering efforts, builds project-wide confidence, and drives critical materials development.

computational materials↗