BEAM CURRENT MEASURING DEVICE FOR ION ENGINE RESEARCH
Measurement of net direct current along ion beam using a magnetic ammeter
DIRECT CURRENT /DC/↗
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Directly deposited current collecting grids for AMTEC electrodes
Current collection in electrodes for the alkali metal thermal to electric converter (AMTEC) has been improved by using molybdenum grids to decrease sheet and contact resistance in RhW and PtW electrodes. The grids are directly deposited on the solid electrolyte either by sputter- or photodeposition. Comparison of electrodes having such underlying grids with those without such grids has shown power produced in an AMTEC cell to be increased by as much as 35 percent.
Ryan, M. A.↗
Overview of the Microgravity Science Glovebox (MSG) Facility and the Research Performed in the MSG
The Microgravity Science Glovebox (MSG) is a rack facility aboard the International Space Station (ISS) designed for investigation handling. The MSG was built by the European Space Agency (ESA) which also provides sustaining engineering support for the facility. The MSG has been operating on the ISS since July 2002 and is currently located in the US Laboratory Module. The unique design of the facility allows it to accommodate science and technology investigations in a "workbench" type environment. The facility has an enclosed working volume that is held at a negative pressure with respect to the crew living area. This allows the facility to provide two levels of containment for small parts, particulates, fluids, and gases. This containment approach protects the crew from possible hazardous operations that take place inside the MSG work volume. Research investigations operating inside the MSG are provided a large 255 liter enclosed work space, 1000 watts of direct current power via a versatile supply interface (120, 28, plus or minus 12, and 5 volts direct current), 1000 watts of cooling capability, video and data recording and real time downlink, ground commanding capabilities, access to ISS Vacuum Exhaust and Vacuum Resource Systems, and gaseous nitrogen supply. These capabilities make the MSG one of the most utilized facilities on ISS. The MSG has been used for over 27,000 hours of scientific payload operations. MSG investigations involve research in cryogenic fluid management, fluid physics, spacecraft fire safety, materials science, combustion, plant growth, biological studies and life support technology. The MSG facility is operated by the Payloads Operations Integration Center at Marshall Space Flight Center. Payloads may also operate remotely from different telescience centers located in the United States and Europe. The Investigative Payload Integration Manager (IPIM) is the focal to assist organizations that have payloads operating in the MSG facility. NASA provides an MSG engineering unit for payload developers to verify that their hardware is operating properly before actual operation on the ISS. This poster will provide an overview of the MSG facility, a synopsis of the research that has already been accomplished in the MSG, and an overview of video and biological upgrades. The author would like to acknowledge Teledyne Brown Engineering and the entire MSG Team for their inputs into this poster.
Jordan, Lee↗
HVDC Macrogrid Modeling for Power-flow and Transient Stability Studies in North American Continental-Level Interconnections
High Voltage Direct Current (HVDC) transmission lines are being constructed throughout the world, aided by advancements in power electronics and the potential value to transfer power between distant areas and off-shore locations. Multiple HVDC lines within and across large AC interconnections could bring about economic benefits such as interregional capacity exchange, and transfer of low-cost, distant electric energy directly to load centers. In addition, network configuration of HVDC lines could result in additional benefits that have not been deeply studied. This paper describes the modeling process for continental-level power system interconnections with the addition of multiple HVDC lines configured as a macrogrid. The models used for study are based on industry-accepted power-flow and dynamic system models for the North American Eastern and Western Interconnections. The model provides insight on feasibility and initial steady-state and stability tests of the HVDC macrogrid and its interactions with the existing electricity infrastructure, opening the door to analysis of the technical value of such a macrogrid.
HVDC transmission, North American Power Grids, AC ↗
Perpendicular in-plane negative magnetoresistance in ZrTe 5
The unique band structure in topological materials frequently results in unusual magneto-transport phenomena, one of which is in-plane longitudinal negative magnetoresistance (NMR) with the magnetic field aligned parallel to the electrical current direction. This NMR is widely considered as a hallmark of chiral anomaly in topological materials. Here we report the observation of in-plane NMR in the topological material ZrTe 5 when the in-plane magnetic field is both parallel and perpendicular to the current direction, revealing an unusual case of quantum transport beyond the chiral anomaly. We find that a general theoretical model, which considers the combined effect of Berry curvature and orbital moment, can quantitatively explain this in-plane NMR. In conclusion, our results provide new insights into the understanding of in-plane NMR in topological materials.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Direct detection of sub-GeV dark matter with semiconductor targets
Dark matter in the sub-GeV mass range is a theoretically motivated but largely unexplored paradigm. Such light masses are out of reach for conventional nuclear recoil direct detection experiments, but may be detected through the small ionization signals caused by dark matter-electron scattering. Semiconductors are well-studied and are particularly promising target materials because their O(1 eV) band gaps allow for ionization signals from dark matter particles as light as a few hundred keV. Current direct detection technologies are being adapted for dark matter-electron scattering. In this paper, we provide the theoretical calculations for dark matter-electron scattering rate in semiconductors, overcoming several complications that stem from the many-body nature of the problem. We use density functional theory to numerically calculate the rates for dark matter-electron scattering in silicon and germanium, and estimate the sensitivity for upcoming experiments such as DAMIC and SuperCDMS. We find that the reach for these upcoming experiments has the potential to be orders of magnitude beyond current direct detection constraints and that sub-GeV dark matter has a sizable modulation signal. We also give the first direct detection limits on sub-GeV dark matter from its scattering off electrons in a semiconductor target (silicon) based on published results from DAMIC. We make available publicly our code, QEdark, with which we calculate our results. Our results can be used by experimental collaborations to calculate their own sensitivities based on their specific setup. In conclusion, the searches we propose will probe vast new regions of unexplored dark matter model and parameter space.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Logic Gates Made of N-Channel JFETs and Epitaxial Resistors
Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform the desired functions throughout the ranges over which the parameters of the JFETs are distributed. The supply rails V(sub dd) and V(sub ss) and the resistors R are chosen as functions of the distribution of direct-current operating parameters of the group of transistors used.
Krasowski, Michael J.↗
Electrodeposition and analysis of thick bismuth films
Due to its unique physical and chemical properties, bismuth is an attractive candidate for a wide range of applications such as battery anodes, radiation shielding, and semiconductors, to name a few. This work presents the electrodeposition of mechanically stable and homogenous bismuth films at micron-scale thicknesses. A simple one-step electrodeposition process using either a pulse/reverse or direct current source yielded thick, homogenous, and mechanically stable bismuth films. Morphology, electrochemical behavior, adhesion, and mechanical stability of bismuth coatings plated with varying parameters were characterized via optical profilometry, cyclic voltammetry, electron microscopy, and tribology. Scratch testing on thick electroplated coatings (> 100 µm) revealed similar wear resistance properties between the pulse/reverse plated and direct current electroplated films. This study presents a versatile bismuth electroplating process with the possibility to replace lead in radiation shields with an inexpensive, non-toxic metal, or to make industrially relevant electrocatalytic devices.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Bloch-Grüneisen nonlinearity of electron transport in GaAs/AlGaAs heterostructures
We report on nonlinear transport measurements in a two-dimensional electron gas hosted in GaAs/AlGaAs heterostructures. Upon application of direct current, the low-temperature differential resistivity acquires a positive correction, which exhibits a pronounced maximum followed by a plateau. With increasing temperature, the nonlinearity diminishes and disappears. These observations can be understood in terms of a crossover from the Bloch-Gr¨uneisen regime to the quasielastic scattering regime as the electrons are heated by direct current. Calculations considering interaction of electrons with acoustic phonons provide reasonable description of our experimental findings.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Blocking Ion Migration Stabilizes the High Thermoelectric Performance in Cu 2 Se Composites
The applications of mixed ionic–electronic conductors are limited due to phase instability under a high direct current and large temperature difference. Here, it is shown that Cu 2 Se is stabilized through regulating the behaviors of Cu + ions and electrons in a Schottky heterojunction between the Cu 2 Se host matrix and in-situ-formed BiCuSeO nanoparticles. The accumulation of Cu + ions via an ionic capacitive effect at the Schottky junction under the direct current modifies the space-charge distribution in the electric double layer, which blocks the long-range migration of Cu + and produces a drastic reduction of Cu + ion migration by nearly two orders of magnitude. Moreover, this heterojunction impedes electrons transferring from BiCuSeO to Cu 2 Se, obstructing the reduction reaction of Cu + into Cu metal at the interface and hence stabilizes the β-Cu 2 Se phase. Furthermore, incorporation of BiCuSeO in Cu 2 Se optimizes the carrier concentration and intensifies phonon scattering, contributing to the peak figure of merit ZT value of ≈2.7 at 973 K and high average ZT value of ≈1.5 between 400 and 973 K for the Cu 2 Se/ BiCuSeO composites. Here, this discovery provides a new avenue for stabilizing mixed ionic–electronic conduction thermoelectrics, and gives fresh insights into controlling ion migration in these ionic-transport-dominated materials.
36 MATERIALS SCIENCE↗
Resolving Discrepancies in Spin-Torque Ferromagnetic Resonance Measurements: Lineshape versus Linewidth Analyses
When spin-orbit torques are measured using spin-torque ferromagnetic resonance, two alternative ways of analyzing the results to extract the torque efficiencies—lineshape analysis and analysis of the change in linewidth versus direct current—often give inconsistent results. We identify a source for these inconsistencies. We show that fits of spin-torque ferromagnetic resonance data to the standard analysis framework leave significant residuals that we identify as due to (i) current-induced excitations of a small volume of magnetic material with magnetic damping much larger than that of the bulk of the magnetic layer, which we speculate is associated with the heavy-metal–magnet interface and (ii) oscillations of the sample magnetization at the modulation frequency due to heating. Here, the dependence of the residual signals on direct current can interfere with an accurate extraction of spin-torque efficiencies by the linewidth method. We show that the discrepancies between the two types of analysis can be largely eliminated by extrapolation of the window of magnetic fields used in the linewidth fits to small values so as to minimize the influence of the residual signals.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
c -axis transport in UTe 2 : Evidence of three-dimensional conductivity component
Here we study the temperature dependence of electrical resistivity for currents directed along all crystallographic axes of the spin-triplet superconductor UTe 2 . We focus particularly on an accurate determination of the resistivity along the c axis (ρ c ) by using a generalized Montgomery technique that allows extraction of crystallographic resistivity components from a single sample. In contrast to expectations from the observed highly anisotropic band structure, our measurement of the absolute values of resistivities in all current directions reveals a surprisingly nearly isotropic transport behavior at temperatures above Kondo coherence, with ρ c ~ ρ b ~ 2 ρ a , that evolves to reveal qualitatively distinct behaviors on cooling. The temperature dependence of ρ c exhibits a peak at a temperature much lower than the onset of Kondo coherence observed in ρ a and ρ b , consistent with features in magnetotransport and magnetization that point to a magnetic origin. A comparison to the temperature-dependent evolution of the scattering rate observed in angle-resolved photoemission spectroscopy experiments provides important insights into the underlying electronic structure necessary for building a microscopic model of superconductivity in UTe 2 .
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Development of Electronic Load Controllers for Free-Piston Stirling Convertors Aided by Stirling Simulation Model
The free-piston Stirling convertor end-to-end modeling effort at the NASA Glenn Research Center has produced a software-based test bed in which free-piston Stirling convertors can be simulated and evaluated. The simulation model includes all the components of the convertor: the Stirling cycle engine, heat source, linear alternator, controller, and load. So far, it has been used in evaluating the performance of electronic controller designs. Three different controller design concepts were simulated using the model: 1) Controllers with parasitic direct current loading. 2) Controllers with parasitic alternating current loading. 3) Controllers that maintain a reference current. The free-piston Stirling convertor is an electromechanical device that operates at resonance. It is the function of the electronic load controller to ensure that the electrical load seen by the machine is always great enough to keep the amplitude of the piston and alternator oscillation at the rated value. This is done by regulating the load on the output bus. The controller monitors the instantaneous voltage, regulating it by switching loads called parasitic loads onto the bus whenever the bus voltage is too high and removing them whenever the voltage is too low. In the first type of controller, the monitor-ing and switching are done on the direct-current (dc) bus. In the second type, the alternating current bus is used. The model allows designers to test a controller concept before investing time in hardware. The simulation code used to develop the model also offers detailed models of digital and analog electronic components so that the resulting designs are realistic enough to translate directly into hardware circuits.
Regan, Timothy F.↗
Drive Electric Vermont Case Study
Currently in the United States, the heavy majority of plug-in electric vehicle (PEV) sales have been in highly conducive, selected, metropolitan areas; opposed to more broad distribution across the country. The U.S. Department of Energy’s EV Everywhere Grand Challenge is looking carefully at the barriers and opportunities that exist to enable small and midsize communities to partake in the PEV market and benefit from the economic and environmental advantages of PEVs. In order to gain insight into these challenges and barriers, DOE selected a success story (i.e., Drive Electric Vermont) as the subject of this case study, as the state of Vermont is tied with Detroit, Michigan in having the highest percentage of 2014 (most recent complete data) PEV registrations for cold weather U.S. cities and has seen more than a sixfold increase in charging stations over the last three years. The overall objective of this case study was to use the lessons learned from Drive Electric Vermont to determine what activities are most effective at encouraging acquisitions of PEVs and deployment of charging infrastructure in small to midsize communities, prioritizing and sequencing their implementation, identifying robust means for extrapolation, and applying this understanding to other small to midsize communities across the nation. The Drive Electric Vermont Program was formed in 2012 with a goal of increasing the use of electrified transportation in Vermont through policy development, education and outreach, and infrastructure development. The Drive Electric Vermont Program can be broadly broken into four components: (1) strategic planning/leadership, (2) stakeholder/partnership development, (3) education and outreach, and (4) incentives. The early phases of the program focused heavily on strategic planning, and stakeholder and partnership development, followed by a transition to education and outreach activities, charging infrastructure development, and grant and incentive programs that support charging infrastructure deployment and PEV purchases. Future plans include an additional round of consumer/dealer PEV incentives, continuation of the marketing campaign, and utilization of consumer surveys to develop new campaign themes and to optimize information distribution channels. In Vermont, the number of PEVs grew from 88 in July 2012 to 1,113 in January 2016, with a high percentage of the PEVs being plug-in hybrids (i.e., 865) versus all electric vehicles (i.e., 248). The most popular PEVs are Toyota’s Prius Plug-in and Ford’s C-Max Energi, which make up a combined 48% of the total PEV ownership in the state. The PEVs are predominantly clustered in four counties: Lamoille, Caledonia, Washington, and Chittenden. There is no evident correlation between community size and PEV penetration; however, over 70% of PEV owners are in communities of 1,000 to 10,000 people. On the other hand, there is a close correlation between where PEVs are registered and where they publically charge. The number of PEV charging stations in Vermont grew from 17 in January 2013 to 111 in January 2016, at a variety of charging venues, including retail, parking (short term and long term), workplace, dealerships, hotels, education, leisure, and hospitals. The vast majority of the charging venues contain Level 2 electric vehicle supply equipment (EVSE) solely or combined with Level 1 EVSE or direct current fast charging. The average power transferred per charging event for communities across Vermont ranged from 4.8 to 13.8 kWh for direct current fast charging and 1.0 to 11.9 kWh for and Level 2 EVSE. Over half the charging locations offer free charging. For those that do require payment, different pricing models are employed, including monthly memberships, hourly payment (where there is often a higher fee for the first hour followed by a lower hourly fee for the remaining hours), and energy use based on kWh drawn from the EVSE. There is no correlation between pricing models and community size and region, the strongest correlation is by network provider. Charging events across Vermont generally correlate with east-west bands of chargers (Figure ES-1) running from Burlington to Montpelier and in the area of Rutland.
33 ADVANCED PROPULSION SYSTEMS↗
Hypersonic Magneto-Fluid-Dynamic Compression in Cylindrical Inlet
Hypersonic magneto-fluid-dynamic interaction has been successfully performed as a virtual leading-edge strake and a virtual cowl of a cylindrical inlet. In a side-by-side experimental and computational study, the magnitude of the induced compression was found to be depended on configuration and electrode placement. To better understand the interacting phenomenon the present investigation is focused on a direct current discharge at the leading edge of a cylindrical inlet for which validating experimental data is available. The present computational result is obtained by solving the magneto-fluid-dynamics equations at the low magnetic Reynolds number limit and using a nonequilibrium weakly ionized gas model based on the drift-diffusion theory. The numerical simulation provides a detailed description of the intriguing physics. After validation with experimental measurements, the computed results further quantify the effectiveness of a magnet-fluid-dynamic compression for a hypersonic cylindrical inlet. At a minuscule power input to a direct current surface discharge of 8.14 watts per square centimeter of electrode area produces an additional compression of 6.7 percent for a constant cross-section cylindrical inlet.
Shang, Joseph S.↗
Evaluation of high temperature capacitor dielectrics
Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.
Hammoud, Ahmad N.↗
High-Temperature Probe Station Developed to Characterize Microwave Devices Through 500 C
A photograph and a block diagram of the high-temperature probe station are shown. The system consists of the ceramic heater mounted on a NASA shuttle tile insulator, a direct current power supply, a personal-computer-based data acquisition and temperature controller, microwave probes, a microscope, and a network analyzer. The ability to perform microwave tests at high temperatures is becoming necessary. There is now a need for sensors and communication circuits that can operate at 500 C and above for aircraft engine development and monitoring during flight. To address this need, researchers have fabricated devices using wide bandgap semiconductors such as SiC with targeted operating temperatures of 500 to 600 C. However, the microwave properties of these devices often change drastically with temperature, so any designs that are intended to be used in such an environment must be characterized at high temperatures. For some reliability, lifetime, and direct-current testing, the device under test can be packaged and characterized in an oven. However, for RF and microwave measurements, it is usually not possible to establish a calibrated reference plane at the device terminals within a package. In addition, the characteristics of the package would vary over a 500 C temperature range, and this would have to be accounted for when the data were analyzed. A high temperature probe station allows circuits and devices to be characterized through on wafer measurements across a broad temperature range with known reference plane. The conventional, commercially available thermal wafer-probe stations that are used to evaluate microwave devices across a controlled temperature range have a typical upper limit of 200 C. Standalone thermal heating chucks are available with an extended upper temperature range of 300 to 400 C. To effectively characterize devices at temperatures up to and surpassing 500 C, Glenn researchers developed a custom probe station. In the past, custom probe stations have been developed to test devices under other extreme environments, such as cryogenic temperatures as low as 37 K. Similarly, this custom probe station was specifically modified for high-temperature use. It allows devices to be measured quickly and flexibly, without the use of wire bonds and test fixtures. The probe station is shown making scattering parameter measurements from 1 to 50 GHz with a Hewlett-Packard 8510C Network Analyzer. There is a half-wafer of silicon directly on top of the heater to provide a uniform heated platform for our sample. A quarter wafer of silicon carbide forms the substrate for our test circuit of several transmission lines.
Downey, Alan N.↗
Stress corrosion crack initiation of alloy 600 in PWR primary water
Stress corrosion crack (SCC) initiation of three mill-annealed (MA) alloy 600 heats in simulated pressurized water reactor primary water has been investigated using constant load tests equipped with in-situ direct current potential drop (DCPD) measurement capabilities. SCC initiation times were greatly reduced by a small amount of cold work. Shallow intergranular (IG) attack and/or cracks were found on most high-energy grain boundaries intersecting the surface with only a small fraction evolving into larger cracks and IGSCC growth. Crack depth profiles were measured and related to DCPD-detected initiation response. Processes controlling the SCC initiation in MA alloy 600 are discussed. IN PRESS, CORRECTED PROOF, 05/02/2017 - mfl
alloy↗