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At least 271 records · Page 15

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NASA NTRS2003

Integrated Fuel Injection and Mixing System with Impingement Cooling Face

An atomizing injector includes a metering set having a swirl chamber, a spray orifice and one or more feed slots etched in a thin plate. The swirl chamber is etched in a first side of the plate and the spray orifice is etched through a second side to the center of the swirl chamber. Fuel feed slots extend non-radially to the swirl chamber. The injector also includes integral swirler structure. The swirler structure includes a cylindrical air swirler passage, also shaped by etching, through at least one other thin plate. The cylindrical air swirler passage is located in co-axial relation to the spray orifice of the plate of the fuel metering set such that fuel directed through the spray orifice passes through the air swirler passage and swirling air is imparted to the fuel such that the fuel has a swirling component of motion. At least one air feed slot is provided in fluid communication with the air swirler passage and extends in non-radial relation thereto. Air supply passages extend through the plates of the metering set and the swirler structure to feed the air feed slot in each plate of the swirler structure.

Mansour, Adel B.↗

NASA NTRS1992

A new method for internal calibration of nuclear track detectors

A new technique is proposed for an internal calibration of a two-layer detector assembly. Spatially coincident pairs of conical tracks on one surface and overetched tracks on the adjacent surface are selected for measurement. Both the etch rate ratio and the particle range can be obtained from the minor and major diameters of the elliptical track and the radii of the circular tracks for two etching steps. This technique was applied to CR-39 detectors exposed to fast neutrons and those flown on a high altitude balloon in order to evaluate the proton response. An improvement by using multi-step etching was also carried out. It was found that not only a single set of the etch rate ratio and the range but also the response curve could be estimated in an extended region by analyzing combined growth curves.

NASA Discipline Radiation Health↗

NASA NTRS2005

Method of producing an integral resonator sensor and case

The present invention discloses an inertial sensor having an integral resonator. A typical sensor comprises a planar mechanical resonator for sensing motion of the inertial sensor and a case for housing the resonator. The resonator and a wall of the case are defined through an etching process. A typical method of producing the resonator includes etching a baseplate, bonding a wafer to the etched baseplate, through etching the wafer to form a planar mechanical resonator and the wall of the case and bonding an end cap wafer to the wall to complete the case.

Shcheglov, Kirill V.↗

NASA NTRS2008

Integral resonator gyroscope

Shcheglov, Kirill V.↗

NASA NTRS2008

Patterning Techniques for Magnesium Diboride Films for Superconducting Transition Edge Sensor Bolometer Arrays

We present a comparison of several patterning techniques for magnesium diboride films with the goal of making membrane-supported superconducting transition edge sensor bolometer arrays suited for far infrared exploration of outer planets and icy moons. We compare etch properties such as etch rate, selectivity to resist, and edge roughness for wet etching, reactive ion etching, and ion-milling processes.

Travers, D. E.↗

NASA NTRS2006

Selective Plasma Deposition of Fluorocarbon Films on SAMs

A dry plasma process has been demonstrated to be useful for the selective modification of self-assembled monolayers (SAMs) of alkanethiolates. These SAMs are used, during the fabrication of semiconductor electronic devices, as etch masks on gold layers that are destined to be patterned and incorporated into the devices. The selective modification involves the formation of fluorocarbon films that render the SAMs more effective in protecting the masked areas of the gold against etching by a potassium iodide (KI) solution. This modification can be utilized, not only in the fabrication of single electronic devices but also in the fabrication of integrated circuits, microelectromechanical systems, and circuit boards. In the steps that precede the dry plasma process, a silicon mold in the desired pattern is fabricated by standard photolithographic techniques. A stamp is then made by casting polydimethylsiloxane (commonly known as silicone rubber) in the mold. The stamp is coated with an alkanethiol solution, then the stamp is pressed on the gold layer of a device to be fabricated in order to deposit the alkanethiol to form an alkanethiolate SAM in the desired pattern (see figure). Next, the workpiece is exposed to a radio-frequency plasma generated from a mixture of CF4 and H2 gases. After this plasma treatment, the SAM is found to be modified, while the exposed areas of gold remain unchanged. This dry plasma process offers the potential for forming masks superior to those formed in a prior wet etching process. Among the advantages over the wet etching process are greater selectivity, fewer pin holes in the masks, and less nonuniformity of the masks. The fluorocarbon films formed in this way may also be useful as intermediate layers for subsequent fabrication steps and as dielectric layers to be incorporated into finished products.

Crain, Mark M., III↗

NASA NTRS2011

Metallographic Preparation of Space Shuttle Reaction Control System Thruster Electron Beam Welds for Electron Backscatter Diffraction

A Space Shuttle Reaction Control System (RCS) thruster failed during a firing test at the NASA White Sands Test Facility (WSTF), Las Cruces, New Mexico. The firing test was being conducted to investigate a previous electrical malfunction. A number of cracks were found associated with the fuel closure plate/injector assembly (Fig 1). The firing test failure generated a flight constraint to the launch of STS-133. A team comprised of several NASA centers and other research institutes was assembled to investigate and determine the root cause of the failure. The JSC Materials Evaluation Laboratory was asked to compare and characterize the outboard circumferential electron beam (EB) weld between the fuel closure plate (Titanium 6Al-4V) and the injector (Niobium C-103 alloy) of four different RCS thrusters, including the failed RCS thruster. Several metallographic challenges in grinding/polishing, and particularly in etching were encountered because of the differences in hardness, ductility, and chemical resistance between the two alloys and the bimetallic weld. Segments from each thruster were sectioned from the outboard weld. The segments were hot-compression mounted using a conductive, carbon-filled epoxy. A grinding/polishing procedure for titanium alloys was used [1]. This procedure worked well on the titanium; but a thin, disturbed layer was visible on the niobium surface by means of polarized light. Once polished, each sample was micrographed using bright field, differential interference contrast optical microscopy, and scanning electron microscopy (SEM) using a backscatter electron (BSE) detector. No typical weld anomalies were observed in any of the cross sections. However, areas of large atomic contrast were clearly visible in the weld nugget, particularly along fusion line interfaces between the titanium and the niobium. This prompted the need to better understand the chemistry and microstructure of the weld (Fig 2). Energy Dispersive X-Ray Spectroscopy (EDS) was used to confirm the chemical composition of the variations in contrast in these areas. Niobium alloys generally require exposure to more aggressive chemical reagents than titanium alloys for etching because of niobium s chemical resistance; therefore, the titanium portion of the sample was etched first. A five second immersion in Kroll s reagent revealed a general microstructure on the titanium portion of the sample; however, the titanium heat affected zone closest to the weld, was over-etched due to higher concentrations of refined grains and an increase in eta-phase. The Kroll s etchant also revealed some microstructure in the weld nugget itself; the niobium portion of the sample remained unetched.

Martinez, James↗

NASA NTRS2004

SiC-Based Miniature High-Temperature Cantilever Anemometer

The figure depicts a miniature cantilever-type anemometer that has been developed as a prototype of compact, relatively nonintrusive anemometers that can function at temperatures up to 600 C and that can be expected to be commercially mass-producible at low cost. The design of this anemometer, and especially the packaging aspect of the design, is intended to enable measurement of turbulence in the high-temperature, high-vibration environment of a turbine engine or in any similar environment. The main structural components of the anemometer include a single-crystal SiC cantilever and two polycrystalline SiC clamping plates, all made from chemical-vapor-deposited silicon carbide. Fabrication of these components from the same basic material eliminates thermal-expansion mismatch, which has introduced spurious thermomechanical stresses in cantilever-type anemometers of prior design. The clamping plates are heavily oxidized to improve electrical insulation at high temperature. A cavity that serves as a receptacle for the clamped end of the cantilever is etched into one end of one clamping plate. Trenches that collectively constitute a socket for a multipin electrical plug (for connection to external electronic circuitry) are etched into the opposite end of this clamping plate. Metal strips for electrical contact are deposited on one face of the other clamping plate. Piezoresistive single-crystal SiC thin-film strain gauges are etched in the n-type SiC epilayer in a Wheatstone-bridge configuration. Metal contact pads on the cantilever that extend into the clamping-receptacle area, are obtained by deposition and patterning using standard semiconductor photolithography and etching methods. The cantilever and the two clamping plates are assembled into a sandwich structure that is then clamped in a stainless-steel housing. The Wheatstone- bridge carrying SiC cantilever with the metal contact pads on the piezoresistors is slid into the receptacle in the bottom clamping plate. The top clamping plate is brought into contact with the bottom plate so that the narrow section of the metal strips on the top clamp plate aligns with the metal contact pads on the cantilever. When the parts are clamped together, the metal strips provide electrical connections between the Wheatstone-bridge contact points and the sides the trenches that constitute the socket for the multipin electrical plug. Hence, to connect the Wheatstone bridge to external circuitry for processing of the anemometer readout, one need only insert the plug in the socket. In operation, the cantilever end of the stainless-steel housing is mounted flush with an engine wall and the unclamped portion of the cantilever is exposed into the flow. The cantilever is deflected in direct proportion to the force induced by component of flow parallel to the engine wall and perpendicular to the broad exposed face of the cantilever. The maximum strain on the cantilever occurs at the clamped edge and is measured by the piezoresistors, which are located there. The corresponding changes in resistance manifest themselves in the output of the Wheatstone bridge.

Okojie, Robert S.↗

NASA NTRS2012

Fabrication of an Absorber-Coupled MKID Detector

Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a thin silicon membrane bonded to a thick silicon handle wafer. (2) The metal microwave circuitry on the front of the membrane is patterned and etched. (3) The wafer is then temporarily bonded with wafer wax to a Pyrex wafer, with the SOI side abutting the Pyrex. (4) The silicon handle component of the SOI wafer is subsequently etched away so as to expose the membrane backside. (5) The wafer is flipped over, and metal microwave circuitry is patterned and etched on the membrane backside. Furthermore, cuts in the membrane are made so as to define the individual detector array chips. (6) Silicon frames are micromachined and glued to the silicon membrane. (7) The membranes, which are now attached to the frames, are released from the Pyrex wafer via dissolution of the wafer wax in acetone.

Brown, Ari↗

NASA NTRS2013

Silicon Micromachined Microlens Array for THz Antennas

5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a smooth curvature. The measured height of the silicon microlens is about 280 microns. In this case, the original height of the photoresist was 210 microns. The change was due to the etching selectivity of 1.33 between photoresist and silicon. The measured surface roughness of the silicon microlens shows the peak-to-peak surface roughness of less than 0.5 microns, which is adequate in THz frequency. For example, the surface roughness should be less than 7 microns at 600 GHz range. The SEM (scanning electron microscope) image of the microlens confirms the smooth surface. The beam pattern at 550 GHz shows good directivity.

Lee, Choonsup↗

NASA NTRS2015

Toward Edge-Defined Holey Boron Nitride Nanosheets

"Holey" two-dimensional (2D) nanosheets with well-defined holy morphology and edge chemistry are highly desirable for applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. For example, holey grapheme is currently under extensive investigation for energy storage applications because of the improvement in ion transport due to through the thickness pathways provided by the holes. Without the holes, the 2D materials have significant limitations for such applications in which efficient ion transport is important. As part of an effort to apply this approach to other 2D nanomaterials, a method to etch geometrically defined pits or holes on the basal plane surface of hexagonal boron nitride (h-BN) nanosheets has been developed. The etching, conducted via heating in ambient air using metal nanoparticles as catalysts, was facile, controllable, and scalable. Starting h-BN layered crystals were etched and subsequently exfoliated into boron nitride nanosheets (BNNSs). The as-etched and exfoliated h-BN nanosheets possessed defined pit and hole shapes that were comprised of regulated nanostructures at the edges. The current finding are the first step toward the bulk preparation of holey BNNSs with defined holes and edges.

Lin, Yi↗

NASA NTRS2019

Highly Absorptive Pupil Mask Fabricated with Black Silicon

Many of NASA’s direct imaging of exoplanet missions and projects require fabricated coronagraph masks to control scattering and diffraction of light. The designed, patterned mask intended for the coronagraphic testbeds are highly absorptive in the visible range on non-metallic regions. In this work, we employed the cryogenic etching process to fabricate black silicon (BSi) to achieve a high aspect ratio (HAR) structures with higher etch rate than conventional reactive ion etching (REI). Recent bidirectional reflectance distribution function (BRDF) measurements of uniformly etched BSi on silicon wafer show highly diffusive BSi with a specular reflective component in the orders of seven magnitudes lower than the total hemispherical reflectance when the polarized or non-polarized incident beam is used.

black-silicon↗

NASA NTRS2019

Highly Absorptive Pupil Mask Fabricated with Black Silicon

BRDF↗

NASA NTRS2011

Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies

Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.

Silicon micromachining↗

NASA NTRSDate not supplied

Black-silicon as a Wideband Infrared Absorber for the Space Instruments: Fabrication, Modeling, and Characterization

The uniform black silicon (BSI) cryogenically etched has been demonstrated as a superior absorber in par with other ultra-absorbers such as carbon nano tubes in the visible and near-infrared spectrum. In this work, we discuss the fabrication, modeling, and characterization of the BSI aiming at the 2.5-5 microns range. We investigated a series of cryogenic parameters such as temperature, pressure, oxygen flowrate, power, and etching duration and fabricated a series of uniformly etched wafers. Additionally, we established at hree-dimensional mathematical model of a unit cell and manipulated the silicon needle geometry and shape. Our preliminary fabrication results show silicon needles of 8 micron height have five orders of magnitude specular reflectance in the infrared region. The modeling efforts how longer pillar heights could be better absorbers as the wavelength increases.

Wideband absorber↗

NASA NTRS1973

Characteristics of tracks of ions of 14 less than or equal to Z less than or equal to 36 in common rock silicates.

Identification of heavy ion tracks in minerals by measurements of track etch rates and total etchable track lengths were irradiated with beams of Si, Cl, Ti, Fe, Zn, and Kr at energies up to 10.35 MeV/nucleon. Nine minerals commonly used to study fossil cosmic ray tracks in meteorites and lunar samples. From measurements of etched track length as a function of residual range, response curves for various minerals were determined as a function of ionization rate, using the expression previously derived by Price et al. (1968). These curves increase smoothly with ionization rate instead of rising abruptly at some critical value as was previously thought. It is shown that the track etch rate concept accounts qualitatively for total etchable track length distributions, but that the positions of the peaks of different elements in these histograms occur at shorter lengths for fossil tracks than for fresh tracks. Annealing data indicate that, at maximum lunar surface temperatures, tracks in olivine, orthopyroxenes, and feldspars may be significantly shortened, whereas tracks in clinopyroxenes will not be affected.

Price, P. B.↗

NASA NTRS1977

Residual stresses in boron/tungsten and boron/carbon fibers

By measuring the change in fracture stress of 203 micrometer diameter fibers of boron on tungsten (B/W) as a function of fiber diameter as reduced by chemical etching, it is shown that the flaws which limit B/W fiber strength are located at the surface and in the tungsten boride core. After etching to a diameter of 188 micrometers m virtually all fiber fractures were caused by core flaws, the average strength being 4.50 GN/sq m. If both the surface and core flaws are removed, the fracture strength, limited by flaws in the boron itself, is approximately 6.89 GN/sq m. This was measured on B/W fibers which were split longitudinally and had their cores removed by chemical etching. The longitudinal residual stress distribution was determined for 102 micrometer diameter B/W and B/C fibers.

Behrendt, D. R.↗

NASA NTRS1978

Effects of ultrathin oxides in conducting MIS structures on GaAs

Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

Childs, R. B.↗