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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15

Deep-Sea Video Cameras Without Pressure Housings

Underwater video cameras of a proposed type (and, optionally, their light sources) would not be housed in pressure vessels. Conventional underwater cameras and their light sources are housed in pods that keep the contents dry and maintain interior pressures of about 1 atmosphere (.0.1 MPa). Pods strong enough to withstand the pressures at great ocean depths are bulky, heavy, and expensive. Elimination of the pods would make it possible to build camera/light-source units that would be significantly smaller, lighter, and less expensive. The depth ratings of the proposed camera/light source units would be essentially unlimited because the strengths of their housings would no longer be an issue. A camera according to the proposal would contain an active-pixel image sensor and readout circuits, all in the form of a single silicon-based complementary metal oxide/semiconductor (CMOS) integrated- circuit chip. As long as none of the circuitry and none of the electrical leads were exposed to seawater, which is electrically conductive, silicon integrated- circuit chips could withstand the hydrostatic pressure of even the deepest ocean. The pressure would change the semiconductor band gap by only a slight amount . not enough to degrade imaging performance significantly. Electrical contact with seawater would be prevented by potting the integrated-circuit chip in a transparent plastic case. The electrical leads for supplying power to the chip and extracting the video signal would also be potted, though not necessarily in the same transparent plastic. The hydrostatic pressure would tend to compress the plastic case and the chip equally on all sides; there would be no need for great strength because there would be no need to hold back high pressure on one side against low pressure on the other side. A light source suitable for use with the camera could consist of light-emitting diodes (LEDs). Like integrated- circuit chips, LEDs can withstand very large hydrostatic pressures. If power-supply regulators or filter capacitors were needed, these could be attached in chip form directly onto the back of, and potted with, the imager chip. Because CMOS imagers dissipate little power, the potting would not result in overheating. To minimize the cost of the camera, a fixed lens could be fabricated as part of the plastic case. For improved optical performance at greater cost, an adjustable glass achromatic lens would be mounted in a reservoir that would be filled with transparent oil and subject to the full hydrostatic pressure, and the reservoir would be mounted on the case to position the lens in front of the image sensor. The lens would by adjusted for focus by use of a motor inside the reservoir (oil-filled motors already exist).

Cunningham, Thomas↗

Method for imaging informational biological molecules on a semiconductor substrate

Imaging biological molecules such as DNA at rates several times faster than conventional imaging techniques is carried out using a patterned silicon wafer having nano-machined grooves which hold individual molecular strands and periodically spaced unique bar codes permitting repeatably locating all images. The strands are coaxed into the grooves preferably using gravity and pulsed electric fields which induce electric charge attraction to the molecular strands in the bottom surfaces of the grooves. Differential imaging removes substrate artifacts.

Coles, L. Stephen↗

Charge Transport in Twisted Organic Semiconductor Crystals of Modulated Pitch

Many molecular crystals (approximately one third) grow as twisted, helicoidal ribbons from the melt, and this preponderance is even higher in restricted classes of materials, for instance, charge-transfer complexes. Previously, twisted crystallites of such complexes present an increase in carrier mobilities. In this paper, the effect of twisting on charge mobility is better analyzed for a monocomponent organic semiconductor, 2,5-bis(3-dodecyl-2-thienyl)-thiazolo[5,4-d]thiazole (BDT), that forms twisted crystals with varied helicoidal pitches and makes possible a correlation of twist strength with carrier mobility. Films are analyzed by X-ray scattering and Mueller matrix polarimetry to characterize the microscale organization of the polycrystalline ensembles. Carrier mobilities of organic field-effect transistors are five times higher when the crystals are grown with the smallest pitches (most twisted), compared to those with the largest pitches, along the fiber elongation direction. A tenfold increase is observed along the perpendicular direction. Simulation of electrical potential based on scanning electron microscopy images and density functional theory suggests that the twisting-enhanced mobility is mainly controlled by the fiber organization in the film. A greater number of tightly packed twisted fibers separated by numerous smaller gaps permit better charge transport over the film surface compared to fewer big crystallites separated by larger gaps.

36 MATERIALS SCIENCE↗

Characterization of front contact degradation in monocrystalline and multicrystalline silicon photovoltaic modules following damp heat exposure

Reliability and durability tests play a key role in the photovoltaic (PV) industry by minimizing potential failure risks for both existing and new cell and module technologies. In this work, a detailed study of contact degradation in monocrystalline and multicrystalline PV modules is performed. The modules are subjected to a sequence of damp heat (DH) exposures followed by electrical characterization after each step. Electroluminescence (EL) imaging shows different darkening patterns for monocrystalline modules compared to multicrystalline modules; the former shows darkening near the busbars and the latter shows it across virtually the entire cell surface. The primary loss mechanism is confirmed to be resistive after comparing the current-voltage (I–V) characteristics at each DH exposure step. Representative samples have been cored out from both the degraded modules and controls for materials characterization to gain further insights into the degradation mechanism. Top-down and cross-sectional scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and top-down high-resolution X-ray photoelectron spectroscopy (XPS) analysis performed on the cored samples confirm the degradation is due to metallization corrosion. Our study suggests that the difference in the darkening pattern can most likely be attributed to the different silver paste composition used for contacting each cell technology, particularly the composition of the glass frit.

36 MATERIALS SCIENCE↗

Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials

Abstract This paper describes a new method for direct measurement and evaluation of the inhomogeneous electrostatic vector field with translational symmetry in electro-optic materials exhibiting the Pockels effect. It is based on the evaluation of maximum transmittance of low intensity light passing through a sample under a voltage bias. Here, the sample is located between rotating crossed polarizers, and camera images are obtained at each point to determine the electric field. The evaluation procedure is demonstrated using data acquired on a CdZnTeSe quasi-hemispheric semiconductor gamma-ray detector. In addition to CdTe-related compounds, the method can be used for various other materials showing $$\overline{4}3m$$ 4 ¯ 3 m symmetry such as GaAs, CdTe, GaP, 3C-SiC, and ZnS. Furthermore, it can be generalized to other crystalline materials showing the Pockels effect. The method can be used to probe the space charge and the electric field in several kinds of electronic components and devices, as well as provide useful data on the role of defects, contact configurations and other surface and bulk inhomogeneities in the material that can affect the distribution of the internal electric field.

36 MATERIALS SCIENCE↗

Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy

Here, we report on the investigation of an electrically biased high efficiency green III-nitride light-emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron microscope (LEEM). The surface of the LED was activated to negative electron affinity via deposition of a submonolayer of Cs. With the illumination column of the LEEM turned off, upon electrical injection of the LED, we directly image the hot electrons generated by eeh Auger-Meitner nonradiative processes that diffuse through the top p-Ga N layer and emit out the surface of the biased LED. By determining the source of emitted electrons using complementary electron emission spectroscopy measurements, EEM allows us to effectively map the carrier density within the LED. Using EEM, we observed nonelectron emitting regions with a density of approximately 3 × 10 8 cm -2 , identified as V-shaped defects (V-defects). This is confirmed through the corresponding dark spots of panchromatic cathodoluminescence measurements of the same sample and by plan-view transmission electron microscopy. The absence of electron emission at the sidewall of the V-defects can be attributed to several factors, including reduced carrier density in the sidewall quantum wells due to carriers traveling fast through the semipolar sidewalls before being injected into the planar quantum wells, the reduced population of hot electrons surviving diffusion through the thicker p-GaN filling in the V-defect before emission onto vacuum, and a smaller Auger-Meitner coefficient for the low In content semipolar sidewall quantum wells. The stronger electron emission observed at the ridges of most V-defects compared to the planar quantum well regions indicates larger local injected carrier densities, confirming that V-defect sidewalls allow for strong lateral carrier injection when compared to the weaker vertical injection away from the V-defect as evidenced by the weaker electron emission intensity away from the V-defects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The study of surface acoustic wave charge transfer device

A surface acoustic wave-charge transfer device, consisting of an n-type silicon substrate, a thermally grown silicon dioxide layer, and a sputtered film of piezoelectric zinc oxide is proposed as a means of circumventing problems associated with charge-coupled device (CCD) applications in memory, signal processing, and imaging. The proposed device creates traveling longitudinal electric fields in the silicon and replaces the multiphase clocks in CCD's. The traveling electric fields create potential wells which carry along charges stored there. These charges may be injected into the wells by light or by using a p-n junction as in conventional CCD's.

Papanicolaou, N.↗

Time-dependence of sea-ice concentration and multiyear ice fraction in the Arctic Basin

Microwave images of sea ice obtained by Nimbus-5 and the NASA CV-990 airborne laboratory are used to determine the time variation of the sea-ice concentration and multiyear ice fraction within the pack ice in the Arctic Basin. The images, constructed from data acquired from the electrically scanned microwave radiometer, are analyzed for four seasons during 1973-1975. Observations indicate significant variations in the sea-ice concentration in the spring, late fall, and early winter. Sea-ice concentrations as low as 50% were detected in large areas in the interior of the Arctic polar sea-ice pack. The applicability of passive-microwave remote sensing for monitoring the time dependence of sea-ice concentration is considered.

Gloersen, P.↗

Influence of temperature gradients on the measurement accuracy of IR imaging systems

Implementing a new experimental aerodynamic technique, a long electrically heated wire was placed across flows with general velocity distributions (wakes, jets). By measuring the temperature distribution along the wire with an IR camera, the flow behavior was identified. Furthermore, it is suggested that by using Nusselt number correlations, the velocity distributions can be deduced. Comparing the results with predictions based on heat transfer correlations, it was found that the IR camera cannot accurately track high gradient temperature fields. A correction procedure is outlined to account for the errors found in the measured results.

Gartenberg, Ehud↗

The 1982 Aeronautics and Space Highlights

This video includes STS 3 & 4, Challenger completed, unmanned launches, the Hubble Space Telescope, Pioneers 8 & 9 encounter, Mars Pictures, Landsat 4, wind energy, ion-electric engines, solar powered medical system, medical image analysis, rotor systems research aircraft, XV-15, propfan research, aircraft icing studies, and Oshkosh Sirshow.

Source record↗

Testing Done for Lorentz Force Accelerators and Electrodeless Propulsion Technology Development

The NASA Glenn Research Center is developing Lorentz force accelerators and electrodeless plasma propulsion for a wide variety of space applications. These applications range from precision control of formation-flying spacecraft to primary propulsion for very high power interplanetary spacecraft. The specific thruster technologies being addressed are pulsed plasma thrusters, magnetoplasmadynamic thrusters, and helicon-electron cyclotron resonance acceleration thrusters. The pulsed plasma thruster mounted on the Earth Observing-1 spacecraft was operated successfully in orbit in 2002. The two-axis thruster system is fully incorporated in the attitude determination and control system and is being used to automatically counteract disturbances in the pitch axis of the spacecraft. Recent on-orbit operations have focused on extended operations to add flight operation time to the total accumulated thruster life. The results of the experiments pave the way for electric propulsion applications on future Earth-imaging satellites.

Pencil, Eric J.↗

Electrical Impedance Tomography Technology: 2013 Center Innovation Fund Final Report

Electrical impedance tomography is a medical noninvasive imaging technology which has advantages over other medical imaging technologies for medically safe long term real time internal imaging monitoring applications in human patients. The technology is much more compact, portable, low power and potentially more low cost compared to other medical image technologies, making it very well suited for medical aerospace and spaceflight applications. EIT technology’s main drawback has been low image resolution, and consequently improving EIT resolution is the primary research goal, as well as increasing imaging speed for real time animation imaging. In a relatively short time the BERL group has brought together design plans, technical resources and has built and tested hardware with the purpose of improving EIT imaging technology. EIT prototype system development plans and system designs have been made to target needed EIT technical improvement in electronic and computer hardware as well as EIT software technology. New hardware design and fabrication resources and technologies have been brought together through resourceful use of existing equipment and software at BERL, and a significant advance has been made in custom electronic hardware prototyping capabilities in collaboration with EFAL, for mutual benefit for both NASA KSC laboratories. BERL has gained significant EIT software capability and tested EIT imaging algorithm code through collaboration with an internationally recognized EIT software development and research forum. A new custom workstation has been developed, built and tested using internal resources, equipment and expertise, that includes a new state-of-the-art massively parallel technology that is commercially available. Custom prototype hardware has been designed and tested, a high priority electronic design, key to improving electronic performance and image quality, has been researched and tested in four designs, with a summary of test results of the selected design illustrated here. The selected design performance exceeds the developed EIT design hardware specifications.

Michael R Lapointe↗

Real-time incoherent-to-coherent optical converter

Description of a real-time incoherent-to-coherent optical converter designed for application in image processing systems. The converter utilizes the photoconductivity effect of the compound Bi(12)SiO(20) for spatial modulation of electrical polarization in the compound. An optically absorbed write-in image is stored as an image polarization pattern in the device. Readout is effectuated electrooptically by using phase retardation in a polarized coherent light beam during the passage through the crystal. The operating mode required for achieving continuous image conversion with a high-speed recyclability is discussed. The performance characteristics of the converter are given and the fabrication technology is described.

Vohl, P.↗

Image data processing of earth resources management

The Earth Resources Technology Satellite (ERTS-1) was launched on July 23, 1972. Since that date, the vehicle has been acquiring and transmitting to earth a vast amount of information relating to the earth's resources. Scientific investigators throughout the world have been analyzing photographic products produced from this data with significant results. Recently, there has been a major shift of emphasis from the visual analysis of photo products to the use of sophisticated digital information extraction techniques. Specialized equipment, such as the GE IMAGE 100 System, has been developed that operates directly from Computer Compatible Tapes, (CCT’s), which contain preprocessed digital data acquired from the ERTS spacecraft. Analysis of CCT data avoids the losses in image resolution and quality which are inherent to all photo processing techniques, thereby greatly increasing the utility of ERTS data. Future ground processing systems will turn out fully corrected (radiometric and geometric) digital tapes which will further increase the utility of ERTS data. This paper is presented in two parts: the first part deals with the subject of present and future generations of image processing and information extraction systems under development at the General Electric Company; the second part describes in more detail the design and operation of GE1s interactive multispectral information extraction systems, IMAGE 100, and discusses results of analyses of ERTS data over a number of U.S. sites.

A W DeSio↗

Imaging Secondary Electron Emission from a Single Atomic Layer

Graphene-based devices hold promise for a wide range of technological applications. Yet characterizing the structure and the electrical properties of a material that is only one atomic layer thick still poses technical challenges. Recent investigations indicate that secondary-electron electron-beam-induced current (SE-EBIC) imaging can reveal subtle details regarding electrical conductivity and electron transport with high spatial resolution. Here, it is shown that the SEEBIC imaging mode can be used to detect suspended single layers of graphene and distinguish between different numbers of layers. Pristine and contaminated areas of graphene are also compared to show that pristine graphene exhibits a substantially lower SE yield than contaminated regions. In conclusion, this SEEBIC imaging mode may provide valuable information for the engineering of surface coatings where SE yield is a priority.

36 MATERIALS SCIENCE↗

In operando neutron imaging characterizations of all-solid-state batteries

The surge in electric vehicle demand has propagated the extensive application of lithium-ion batteries (LIBs) in recent years. Gaining significant traction due to their promising high-energy density and elevated safety over traditional LIBs, all-solid-state Li batteries (ASLBs) have nonetheless been faced with hurdles relating to battery performance. These include concerns with interfacial compatibility, structural stability, Li dendrite inhibition, and large-scale manufacturing. To tackle these issues, it is necessary to employ advanced characterization methods to comprehend the intrinsic mechanisms within ASLBs. In this article, we advocate for the use of neutron imaging as a nondestructive approach for the operando visualization of ASLBs. We draw comparisons with other operando visualization strategies, underline the benefits of neutron imaging, and discuss its potential applicability in the scrutiny of all-solid-state Li metal batteries and all-solid-state Li-sulfur batteries. Neutron imaging provides valuable insights into the dynamics of Li concentration, reaction mechanisms, and transport constraints in ASLBs. These insights are pivotal in contributing to the evolution of high-performance all-solid-state batteries.

25 ENERGY STORAGE↗

Our teams design high-resolution MeV x-ray radiography systems for National security missions [Poster]

The NNSS has been at the forefront of custom high-fidelity x-ray/gamma radiographic imaging solutions that serve our national security for over five decades. Our radiography team utilizes expertise in physics modeling and analysis, along with optical, mechanical, and electrical design, in close collaboration with our customers, to develop imaging methods and capabilities that go beyond their needs. Conceptual designs are developed through R&D efforts to provide solutions for the specific problem at hand. Field systems are designed and built in-house, then qualified utilizing a range of facilities across the National Security Enterprise. Radiographic imaging systems are deployed by our team in the most challenging environments. The NNSS has a strong math and programming team that provides novel on-site image analysis methods that extract crucial information from data returned in field tests.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Reconstruction of simulated electrostatic potentials by automatic differentiation-based phase retrieval in electron microscopy imaging

Measuring interfacial electrostatic potentials is vital to understanding many fundamental materials properties. A variety of TEM methods exist for measuring electric potentials from the phase shift produced on an electron wave as it passes through a sample. However, most are either experimentally challenging or poorly suited to resolving nanoscale features. Here, we demonstrate the viability of a simple, automatic differentiation-based exit wave reconstruction from a focal series of images to accurately measure nanoscale electric potentials. Here, the analysis suggests that under optimal measurement conditions, electric potentials can be resolved to less than 0.06 V in magnitude and less than 1 nm in spatial extent.

36 MATERIALS SCIENCE↗