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Objectives include: a)Identify the types and uses of the various lighting components: Interior (CM, LM), Exterior (CSM, LM); b) Explain the purpose and locations of electroluminescent (EL) and radioluminescent (RL)lighting techniques; c) Understand the use of various D&C lighting components; and d) Understand in-flight anomalies.
The objective of this Phase I project was to create novel conductive materials that are lightweight and strong enough for multiple ground support equipment and Exploration applications. The long-term goal is to combine these materials within specially designed devices to create composites or coatings with diagnostic capabilities, increased strength, and tunable properties such as transparency, electroluminescence, and fire resistance. One such technology application is a smart windows system. In such a system, the transmission of light through a window is controlled by electrical power. In the future, these materials may also be able to absorb sunlight and convert it into electrical energy to produce light, thereby creating a self-sufficient lighting system. This experiment, conducted in collaboration with the Georgia Institute of Technology, demonstrated enhancements in fabricating fiber materials from carbon nanotubes (CNT). These nanotubes were grown as forests in an ultra-high-purity chemical vapor deposition (CVD) furnace and then drawn, using novel processing techniques, into fibers and yarns that would be turned into filaments. This work was submitted to the Journal of Advanced Functional Materials. The CNT fibers were initially tested as filament materials at atmospheric pressure; however, even under high current loads, the filaments produced only random sparking. The CNT fibers were also converted into transparent, hydrophobic, and conductive sheets. Filament testing at low vacuum pressures is in progress, and the technology will be enhanced in 2008. As initial proof of the smart-windows application concept, the use of CNT sheets as composites/ protective coatings was demonstrated in collaboration with Nanocomp Technologies of Concord, New Hampshire.
The present invention is directed toward devices comprising carbon nanotubes that are capable of detecting displacement, impact, stress, and/or strain in materials, methods of making such devices, methods for sensing/detecting/monitoring displacement, impact, stress, and/or strain via carbon nanotubes, and various applications for such methods and devices. The devices and methods of the present invention all rely on mechanically-induced electronic perturbations within the carbon nanotubes to detect and quantify such stress/strain. Such detection and quantification can rely on techniques which include, but are not limited to, electrical conductivity/conductance and/or resistivity/resistance detection/measurements, thermal conductivity detection/measurements, electroluminescence detection/measurements, photoluminescence detection/measurements, and combinations thereof. All such techniques rely on an understanding of how such properties change in response to mechanical stress and/or strain.
A set of multi-junction GaAs/Ge solar array test coupons were subjected to a sequence of 5-year increments of combined environmental exposure tests. The purpose of this test program is to understand the changes and degradation of the solar array panel components, including its ESD mitigation design features in their integrated form, after multiple years (up to 15) of simulated geosynchronous space environment. These tests consist of: UV radiation, electrostatic discharge (ESD), electron/proton particle radiation, thermal cycling, and ion thruster plume exposures. The solar radiation was produced using a Mercury-Xenon lamp with wavelengths in the UV spectrum ranging from 230 to 400 nm. The ESD test was performed in the inverted-gradient mode using a low-energy electron (2.6 - 6 keV) beam exposure. The ESD test also included a simulated panel coverglass flashover for the primary arc event. The electron/proton radiation exposure included both 1.0 MeV and 100 keV electron beams simultaneous with a 40 keV proton beam. The thermal cycling included simulated transient earth eclipse for satellites in geosynchronous orbit. With the increasing use of ion thruster engines on many satellites, the combined environmental test also included ion thruster exposure to determine whether solar array surface erosion had any impact on its performance. Before and after each increment of environmental exposures, the coupons underwent visual inspection under high power magnification and electrical tests that included characterization by LAPSS, Dark I-V, and electroluminescence. This paper discusses the test objective, test methodologies, and preliminary results after 5 years of simulated exposure.
This paper reports on initial fabrication and electrical characterization of 3C-SiC p-n junction diodes grown on step-free 4H-SiC mesas. Diodes with n-blocking-layer doping ranging from approx. 2 x 10(exp 16)/cu cm to approx.. 5 x 10(exp 17)/cu cm were fabricated and tested. No optimization of junction edge termination or ohmic contacts was employed. Room temperature reverse characteristics of the best devices show excellent low-leakage behavior, below previous 3C-SiC devices produced by other growth techniques, until the onset of a sharp breakdown knee. The resulting estimated breakdown field of 3C-SiC is at least twice the breakdown field of silicon, but is only around half the breakdown field of <0001> 4H-SiC for the doping range studied. Initial high current stressing of 3C diodes at 100 A/sq cm for more than 20 hours resulted in less than 50 mV change in approx. 3 V forward voltage. 3C-SiC, pn junction, p+n diode, rectifier, reverse breakdown, breakdown field,heteroepitaxy, epitaxial growth, electroluminescence, mesa, bipolar diode
As the photovoltaic (PV) industry is rapidly expanding around the world, there has been an increasing interest in extending the lifespan of PV modules. Concern has also emerged regarding the recyclability of modules and their component materials, including fluoropolymer-based backsheets. Laminated polyethylene-terephthalate (PET) core backsheets have traditionally been used in the PV industry, but new, co-extruded polyolefin (PO) backsheets show promise as an improved alternative. Mini-module and coupon samples of seven different backsheets (made of layers including contemporary PET and fluoropolymers, novel PO, and polyamide (PA) materials) were run through hygrometric- or UV photolytic-accelerated aging to identify and better understand each material’s degradation modes and the backsheets’ field reliability. In addition to the artificial aging, the natural weathering methods used in this study are described. The comprehensive set of chemical, mechanical, and structural characterizations at intermittent read points in this study is presented, including: visual appearance and color; gloss; mechanical tensile testing; I-V performance; electroluminescence (EL) imaging; dielectric breakdown; FTIR-chemical structure; X-ray-polymer structure (WAXS); and DSC-crystalline content. After 4000 h of aging, a strong correlation occurs between initial physical characteristics (mechanical tensile test) and operating performance (EL and I-V characteristics).
As the photovoltaic (PV) industry is rapidly expanding around the world, there has been an increasing interest in extending the lifespan of PV modules. Concern has also emerged regarding the recyclability of modules and their component materials, including fluoropolymer-based backsheets. Laminated polyethylene-terephthalate (PET) core backsheets have traditionally been used in the PV industry, but new, co-extruded polyolefin (PO) backsheets show promise as an improved alternative. Mini-module and coupon samples of seven different backsheets (made of layers including contemporary PET and fluoropolymers, novel PO, and polyamide (PA) materials) were run through hygrometric- or UV photolytic-accelerated aging to identify and better understand each material's degradation modes and the backsheets' field reliability. In addition to the artificial aging, the natural weathering methods used in this study are described. The comprehensive set of chemical, mechanical, and structural characterizations at intermittent read points in this study is presented, including: visual appearance and color; gloss; mechanical tensile testing; I-V performance; electroluminescence (EL) imaging; dielectric breakdown; FTIR-chemical structure; X-ray-polymer structure (WAXS); and DSC-crystalline content. After 4000 h of aging, a strong correlation occurs between initial physical characteristics (mechanical tensile test) and operating performance (EL and I-V characteristics). This presentation focuses on gloss, FTIR, and breakdown voltage measurements. Results for MiMo power, grayness from EL imaging, optical micrscopy, and specimen morphology (on extraction when cut from MiMos) is also presented.
We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si cell front metallization. Our previous work showed that the I-V measurement of individual cells demonstrated exclusively the cell Rs degradation, and the "beads pattern" of electroluminescence indicated the degradation at the Ag grid of front metallization. Scanning spreading resistance microscopy (SSRM) imaging, which is based on the contact mode of atomic force microscopy and taken on the cross-sections of Ag/Si contact, revealed the electrical conduction pathway of Ag particles in point or small area contact with Si cell emitter. The SSRM results illustrated that the number of electrical contacts in the degraded cell decreased largely compared with the unaffected cell, demonstrating the direct cause of the Rs degradation. This reduction in electrical contact in the degraded cell could be caused by a structural change in the Ag grid during long-term field service: The Ag particles in contact with Si aggregate into the Ag bulk and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 m blocks the current conduction from cell emitter to the Ag grid. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the different degradation susceptibility during the long-term field service. Our results demonstrate an example of the multi-scale characterization approach for understanding photovoltaic degradation mechanisms.
High efficiency silicon solar cells are characterized using current-voltage curves, electroluminescence imaging, impedance spectroscopy, capacitance transients, microwave photoconductive decay, and time-resolved photoluminescence imaging. The sample set is composed of cells from different manufacturers and includes an n-type silicon heterojunction (SHJ), an n-type passivated emitter rear totally diffused (PERT), and five different p-type passivated emitter rear contact (PERC) cells. Carrier lifetimes, both photoconductivity and photoluminescence, are measured co-located with the light excitation pulse and within the cell but away from the light spot. Luminescence intensity and excess carrier lifetimes correlate to cell voltage. The capacitance transient time constants correlate to the capacitance values extracted from impedance spectroscopy.
An OLED lighting device comprising: a blue light-emitting unit with a blue-light fluorescent, phosphorescent or TADF emitter; a yellow light-emitting electroluminescent unit comprising a green phosphorescent emitter, a red phosphorescent emitter and at least one non-emitting host; wherein the blue light-emitting unit and the yellow light-emitting unit are separated by a mixed interlayer with two non-emitting charge-carrier materials. Desirably, the yellow-light emitting unit essentially consists of a green phosphorescent emitter, a red phosphorescent emitter and a single non-emitting host. The mixed interlayer desirably has more than 50% of a hole-transporting material and an electron-transporting material. The Triplet Energy of both materials in the mixed interlayer can be higher than the Triplet Energies of the R and G phosphorescent dopants. The HOMOs of both materials in the mixed interlayer are more negative than the HOMO of the host in the yellow unit but less negative than the HOMO of the host in the blue unit. The LUMOs of the materials in the mixed interlayer can be more negative than the LUMO of the host in the yellow unit but less negative than the LUMO of the host in the blue unit. The OLED lighting device is spectrally tunable according to the supplied power.
In a comprehensive study conducted at NREL's 75 kW bifacial single-axis-tracked field, accelerated degradation was observed in four out of five bifacial silicon photovoltaic (PV) module technologies when compared to their monofacial counterparts. Root cause analysis of accelerated bifacial degradation involved various analytical tools and techniques. This included employing RdTools to identify rates of power loss, conducting measurements on fielded and control modules using infrared imaging, electroluminescence (EL) and photoluminescence (PL), quantum efficiency (QE) analysis, IV-curves assessment, as well as utilizing handheld Raman and reflectance measurement targeted at anti-reflective coating. Most cases pointed to carrier lifetime degradation causing Voc loss and simultaneous Isc loss. In some cases, Isc further decreases likely due to optical effects from encapsulant degradation. The outcomes and methodologies employed in this investigation are documented in this publication. This study's significance is further emphasized by placing the findings within the broader context of the performance and degradation of various bifacial systems, as identified in the PV Fleets data.
NEXT-100 is a high-pressure xenon time projection chamber with electroluminescent amplification, designed to operate with up to approximately 70.5 kg at 13.5 bar. It is the most recent detector developed by the NEXT collaboration to search for the neutrinoless double-beta decay ($ββ0ν$) of Xe-136. The NEXT gas TPC technology offers the best energy resolution near the Q-value of the decay ($Q_{ββ}$ = 2458 keV) among xenon detectors, which is set by design to be <1% FWHM. We report here the high-energy calibration of the detector using a Th-228 source, demonstrating linear response and an energy resolution of $(0.90 \pm 0.02)$% FWHM at the Tl-208 photopeak (2615 keV). This performance extrapolates to a resolution at the double-beta decay end-point of $R(Q_{ββ})$ = $(0.93 \pm 0.02)$% FWHM, confirming the detector's capability for precision energy measurement in the search for $ββ0ν$.
Abstract This paper reports the results of an international interlaboratory comparison study on light‐ and elevated temperature‐induced degradation (LETID) on crystalline silicon photovoltaic (PV) modules. A large global network of PV module manufacturers and PV testing laboratories collaborated to design a protocol for LETID detection and screen a large and diverse set of prototype modules for LETID. Results across labs indicate the reproducibility of LETID testing is likely within ±1% of maximum power (P MP ). In intentionally engineered LETID‐sensitive modules, mean degradation after the prescribed detection stress is roughly 6% P MP . In other module types the LETID sensitivity is smaller, and in some we observe essentially negligible degradation attributable to LETID. In LETID‐sensitive modules, both open‐circuit voltage (V OC ) and short‐circuit current (I SC ) degrade by a roughly similar magnitude. We observe, as do previous studies, that LETID affects each cell in a module differently. An investigation of the potential mismatch losses caused by nonuniform LETID degradation found that mismatch loss is insignificant compared to the estimated loss of cell I SC , which drives loss of module I SC . Overall, this work has helped inform the creation of a forthcoming standard technical specification for LETID testing of PV modules, IEC TS 63342 ED1, and should aid in the interpretation of results from that and other LETID tests.
The demand for ultranarrow spectral emission below 10 nm is critical for next-generation displays. Although current colloidal nanocrystals are successful in light down-conversion applications, they fall short in matching the stringent color purity requirements set by standards like Rec. 2020. Achieving such narrow linewidths through material engineering alone remains elusive, necessitating innovative light management strategies that avoid optical losses and maintain device efficiency. Here, in this work, we present a novel 2D colloidal heterostructure design, combining a CdSe core nanoplatelet, a CdS crown, and a CdZnS shell, to achieve bright bicolor emission in the solid state (green/red) emission with tunable intensity ratios controlled by excitation power (either optical or electrical). Integration of these nanoplatelets into a dielectric cavity further narrows the emission linewidth to sub-2 nm while enhancing the photoluminescence intensity by up to 200 times, meeting the Rec. 2020 color purity targets. This approach paves the way for a strategy avoiding complex laser-based solutions.
In this chapter, we describe luminescence and thermal imaging in the context of thin-film PV devices. First, we discuss both traditional and developing experimental designs, including dark LIT (DLIT), illuminated LIT, PL using different illumination configurations, traditional EL performed under forward -bias current injection, and contactless EL induced with sub -cell illumination patterns. Next, we provide some brief theoretical background to highlight relationships between fundamental materials properties and the resulting luminescence and thermal images. Finally, we give examples of thin-film PV PL, EL, and LIT images to demonstrate the utility of these imaging methods ranging from understanding the microstructure of active layers to managing the quality and reliability of full PV modules.
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. Here, the detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.
A sidewall activation process was optimized for buried magnesium-doped p-GaN layers yielding a significant reduction in tunnel junction-enabled light emitting diode (LED) forward voltage. This buried activation enabled the realization of cascaded blue LEDs with fully transparent GaN homojunction tunnel junctions. The initial optimization of buried p-GaN activation was performed on PN junctions grown by metal organic chemical vapor deposition (MOCVD) buried under hybrid tunnel junctions grown by MOCVD and molecular beam epitaxy. Next the activation process was implemented in cascaded blue LEDs emitting at 450 nm, which were enabled by fully transparent GaN homojunction tunnel junctions. The tunnel junction-enabled multi-active region blue LEDs were grown monolithically by MOCVD. This work demonstrates a state-of-the-art tunnel junction-enabled cascaded LED utilizing homojunction tunnel junctions which do not contain any heterojunction interface.
We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer that otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable band edge spectrum filtering. Three components required development to enable this device: (1) a lattice-mismatched 1.2 eV AlGaInAs junction, (2) a metamorphic contact layer grown after the graded buffer, and (3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly, we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInAs:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150°C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.