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At least 271 records · Page 15

Metalorganic chemical vapor deposition of ZnGeN 2 films on GaN: effects of cation stoichiometry on surface morphology and crystallinity

Novel optoelectronic device designs based on the heterostructures of III-N and II-IV-N 2 are promising to advance device performance significantly. For example, by utilizing InGaN-ZnGeN 2 quantum well (QW) structures instead of pure InGaN, the band structure engineering in the QW active region can lead to improved electron-hole wavefunction overlap, and thus enhance the radiative efficiency for photon generation. These novel heterostructures have great potential to address the current challenge of low quantum efficiency in InGaN QW based light emitting diodes emitting in green and beyond. The materials development of ZnGeN 2 is still at an early stage as compared to the much matured GaN material system. In an ideal octet rule preserving ordered structure of ZnGeN 2 , every N atom is coordinated by exactly two Zn and two Ge atoms. However, local violation of octet rule can be caused by non-ideal coordination of N by the cations. The disordered structure is thermodynamically less favorable but can still be achieved, for example, in kinetics-limited growth regime. The ordered ZnGeN 2 has a bandgap very close to that of GaN (~3.4 eV) and a lattice mismatch of <0.1% with GaN. Interestingly, the valence band of ZnGeN 2 has been predicted to be ~1 eV above that of GaN, which has inspired novel designs for high efficiency light emitters. In this work, we investigated the metalorganic chemical vapor deposition (MOCVD) of ZnGeN 2 films on GaN/c-sapphire templates. Diethylzinc (DEZn), germane (GeH4) and ammonia were used as the precursors for Zn, Ge and N, respectively. A systematic study was conducted to investigate the cation stoichiometry as a function of growth temperature (TG), total reactor pressure (P) and DEZn/GeH 4 molar flow rate ratio (RII/IV). Under the investigated growth window, the Zn/(Zn+Ge) composition in the films, determined from energy dispersive X-ray spectroscopy, decreased monotonically with increase in TG but increased with increase in P and RII/IV. Atom probe tomography data did not indicate the presence of any secondary phases such as Zn 3 N 2 or Ge 3 N 4 . The surface morphology and crystallinity of the grown films had strong correlation with the Zn/(Zn+Ge) composition. The scanning electron microscopy images showed that the near-stoichiometric films have planar surfaces whereas Zn-rich films had crystallites on their surface and the Zn-poor films had faceted surface. Scanning transmission electron microscopy (STEM) imaging revealed that the Zn-rich and Zn-poor films have columnar and filament-like morphology, respectively, whereas the near-stoichiometric films have continuous film-like cross-sectional morphology. TEM nano-diffraction patterns as well as X-ray diffraction 2θ-ω scan profiles indicate that the near stoichiometric films are single crystalline. Nano-diffraction pattern of the stoichiometric films resembled that of a disordered ZnGeN 2 structure. Room temperature Raman spectra of near-stoichiometric films showed only the phonon density of states like features of a cation disordered ZnGeN 2 . Cathodoluminescence and photoluminescence spectra measured at different temperatures had similar features with peak emission wavelength at ~ 2 eV. In conclusion, the stoichiometry of ZnGeN 2 films can be widely tuned by tuning the MOCVD growth parameters. The surface morphology and the crystallinity of the films were found to have strong correlation with the Zn/(Zn+Ge) composition. The stoichiometric ZnGeN 2 films grown on GaN were demonstrated with uniform surface morphology and high crystalline quality. The results from this work will provide pathway to implement ZnGeN 2 in device structures.

Karim, Md Rezaul↗

Ion implantation of magnesium guests into type II silicon clathrate films: an alternate approach to doping a cage-like silicon allotrope

Type II silicon clathrates, with their unique cage-like structure, offer exciting potential for applications in thermoelectrics, photovoltaics, and quantum materials due to their tunable electronic and thermal properties. This study investigates the use of ion implantation to introduce targeted guest atoms, which act as dopants, into type II Si clathrate films. The focus is on Mg as a test case for implantation, a dopant previously unreported in type II Si clathrates. The effects of ion implantation on the metastable Si clathrate structure were examined through systematic investigation of implant parameters. Time-of-flight secondary ion mass spectrometry depth profiling confirmed the successful implantation of Mg, while X-ray diffraction and confocal Raman spectroscopy demonstrated minimal structural damage at lower fluences, with the clathrate framework retaining its integrity without converting to other phases. At the higher end of the fluence range implantation caused localized transitions from clathrate to amorphous silicon. Implant activation using rapid thermal annealing was examined with the clathrate structure stable up to 500 °C and being converted to diamond silicon above this temperature. Post-implantation and activation structural characterization showed evidence of damage reversal. Electron paramagnetic resonance studies provided indirect evidence of dopant incorporation. These findings establish a foundation for introducing alternative guests/dopants into the Si clathrate cages through ion implantation, advancing their tunability for next-generation quantum and optoelectronic devices.

36 MATERIALS SCIENCE↗

Strain-induced majority carrier inversion in ferromagnetic epitaxial LaCo O 3 - δ thin films

Tensile-strained LaCoO 3-δ thin films are ferromagnetic, in sharp contrast to the zero-spin bulk, although no clear consensus has emerged as to the origin of this phenomenon. While magnetism has been heavily studied, relatively little attention has been paid to electronic transport, due to the insulating nature of the strain-stabilized ferromagnetic state. Here, structure, magnetism, and transport are studied in epitaxial LaCoO 3-δ films (10–22-nm thick) on various substrates (from 1.4% compressive to 2.5% tensile strain), using synchrotron x-ray diffraction, scanning probe and transmission electron microscopy, magnetometry, polarized neutron reflectometry, resistivity, and Hall effect. High quality, smooth films are obtained, exhibiting superstructures associated with both oxygen vacancy ordering and periodic in-plane ferroelastic domains. Consistent with prior work, ferromagnetism with an approximately 80–85 K Curie temperature is observed under tension; polarized neutron reflectometry confirms a relatively uniform magnetization depth profile, albeit with interfacial dead layer formation. Electrical transport is found to have similar semiconducting nature to bulk, but with reduced resistivity and activation energy. Hall effect measurements, however, reveal a striking inversion of the majority carrier type, from p-type in the bulk and under compression to n-type under tension. While thus far overlooked, ferromagnetism in epitaxial LaCoO 3-δ films is thus directly correlated with n-type behavior, providing important insight into the ferromagnetic state in this system. Here, aided by density functional theory calculations, these results are interpreted in terms of tensile-strain-induced orbital occupation and band structure changes, including a rapid decrease in effective mass at the e g -derived conduction band minimum, and corresponding increase at the valence band maximum.

36 MATERIALS SCIENCE↗

Routes to high-performance operation in Wendelstein 7-X: turbulence suppression with shaping of the density profile

Steep density gradients generally lead to improved plasma performance in the neoclassically optimized stellarator W7-X. This is evident in the global energy confinement time as well as in the ion temperature and can be explained by a strong reduction of the ion temperature gradient turbulence. Such conditions can experimentally be realized by several methods: injection of cryogenic hydrogen pellets, appropriate combination of neutral beam and electron cyclotron resonance heating (ECRH) and, in some cases, with low power of ECRH after preconditioning of the first wall. The duration of the improved phases is determined by the ability to sustain the steep density gradient, by technical limitations of the involved systems and, eventually, by the plasma stability. This paper gives an overview of relevant experimental results and presents example discharges where the improved confinement conditions could be extended to multiple seconds: up to 4 s using neutral beam injection and from 14 to 40 s with steady state pellet injection. In these plasmas the turbulent thermal diffusivity is reduced by a factor of 3 to 4 in a broad radial range, which allows high ion temperatures of up to 3 keV at the densities of about 1.5 • 10 20 m −3 .

high performance plasma↗

Examining transport and integrated modeling predictive capabilities for negative-triangularity scenarios

This paper investigates the predictive capabilities of TGYRO and TGLF models in assessing the performance of negative triangularity (NT) plasmas compared to positive triangularity (PT) plasmas in fusion devices. TGYRO predicts kinetic profiles, while TGLF analyzes turbulent transport. The study reveals that TGYRO reasonably predicts NT profiles similar to PT, although it overpredicts the high-power scenarios where there is increased experimental MHD activity. TGLF analysis finds reduced linear growth rates in NT and altered flux spectra relative to PT. Additionally, the TGLF SAT0 saturation model is observed to predict high-k transport and a reduction of particle transport with the electron temperature gradient. These findings are further corroborated by core-pedestal modeling using the Stability Transport Equilibrium Pedestal workflow, showing stronger confinement improvements in NT, particularly at higher power densities for the SAT0 saturation model. Furthermore, the study underscores the importance of accurately capturing turbulence saturation mechanisms for NT in order to project its performance accurately in fusion reactors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Global gyrokinetic simulations of ASDEX Upgrade up to the transport timescale with GENE–Tango

An accurate description of turbulence up to the transport timescale is essential for predicting core plasma profiles and enabling reliable calculations for designing advanced scenarios and future devices. Here, we exploit the gap separation between turbulence and transport timescales and couple the global gyrokinetic code GENE to the transport-solver Tango, including kinetic electrons, collisions, realistic geometries, toroidal rotation and electromagnetic effects for the first time. This approach overcomes gyrokinetic codes' limitations and enables high-fidelity profile calculations in experimentally relevant plasma conditions, significantly reducing the computational cost. We present numerical results of GENE–Tango for two ASDEX Upgrade discharges, one of which exhibits a pronounced peaking of the ion temperature profile not reproduced by TGLF–ASTRA. We show that GENE–Tango can correctly capture the ion temperature peaking observed in the experiment. By retaining different physical effects in the GENE simulations, e.g., collisions, toroidal rotation and electromagnetic effects, we show that the ion temperature profile's peaking can be linked to electromagnetic effects of submarginal (stable) KBM modes. Furthermore, based on these results, the expected GENE–Tango speedup for the ITER standard scenario is larger than two orders of magnitude compared to a single gyrokinetic simulation up to the transport timescale, possibly making first-principles ITER simulations feasible on current computing resources.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Additive manufacturing enabled hot-wire apparatus with suppressed edge effect error

This invention describes a method of structuring a metal or metal coated wire in a manner such that it provides enhanced accuracy when used in a hot-wire apparatus for transient thermal conductivity measurements for low-density materials. This is accomplished by using a diameter varying structure with two ends of the wire of sufficiently small diameter that the edge-effect induced error can be reduced by generating a more uniform temperature profile along the wire, whereas in conventional apparatus the temperatures always drop at the ends of a finite wire due to its ends that are being cooled by the wire-supports.

36 MATERIALS SCIENCE↗

Optical transient grating pumped X-ray diffraction microscopy for studying mesoscale structural dynamics

Abstract A fundamental understanding of materials’ structural dynamics, with fine spatial and temporal control, underpins future developments in electronic and quantum materials. Here, we introduce an optical transient grating pump and focused X-ray diffraction probe technique (TGXD) to examine the structural evolution of materials excited by modulated light with a precisely controlled spatial profile. This method adds spatial resolution and direct structural sensitivity to the established utility of a sinusoidal transient-grating excitation. We demonstrate TGXD using two thin-film samples: epitaxial BiFeO 3 , which exhibits a photoinduced strain (structural grating) with an amplitude proportional to the optical fluence, and FeRh, which undergoes a magnetostructural phase transformation. In BiFeO 3 , structural relaxation is location independent, and the strain persists on the order of microseconds, consistent with the optical excitation of long-lived charge carriers. The strain profile of the structural grating in FeRh, in comparison, deviates from the sinusoidal excitation and exhibits both higher-order spatial frequencies and a location-dependent relaxation. The focused X-ray probe provides spatial resolution within the engineered optical excitation profile, resolving the spatiotemporal flow of heat through FeRh locally heated above the phase transition temperature. TGXD successfully characterizes mesoscopic energy transport in functional materials without relying on a specific transport model.

36 MATERIALS SCIENCE↗

Kinetics of amorphous defect phases measured through ultrafast nanocalorimetry

Recognition of the role of extended defects on local phase transitions has led to the conceptualization of the defect phase, localized thermodynamically stable interfacial states that have since been applied in a myriad of material systems to realize significant enhancements in material properties. Here, we explore the kinetics of grain boundary confined amorphous defect phases, utilizing the high temperature and scanning rates afforded by ultrafast differential scanning calorimetry to apply targeted annealing/quenching treatments at high rates capable of capturing the kinetic behavior. Four Al-based nanocrystalline alloys, including two binary systems, Al–Ni and Al–Y, and two ternary systems, Al–Mg–Y and Al–Ni–Y, are selected to probe the materials design space (enthalpy of mixing, enthalpy of segregation, chemical complexity) for amorphous defect phase formation and stability, with correlative transmission electron microscopy applied to link phase evolution and grain stability to nanocalorimetry signatures. A series of targeted isothermal annealing heat treatments is utilized to construct a Time–Temperature-Transformation curve for the Al–Ni system, from which a critical cooling rate of 2400 °C/s was determined for the grain boundary confined disordered-to-ordered transition. Finally, a thermal profile consisting of 1000 repeated annealing sequences was created to quantify the recovery of the amorphous defect phase following sequential annealing treatments, with results indicating remarkable microstructural stability after annealing at temperatures above 90% of the melting temperature. This work contributes to a deeper understanding of grain boundary localized thermodynamics and kinetics, with potential implications for the design and optimization of advanced materials with enhanced stability and performance.

Amorphous defect phases↗

Small-angle X-ray and neutron scattering

Small-angle scattering (SAS) is a technique that is able to probe the structural organization of matter and quantify its response to changes in external conditions. X-ray and neutron scattering profiles measured from bulk materials or materials deposited at surfaces arise from nanostructural inhomogeneities of electron or nuclear density. Furthermore, the analysis of SAS data from coherent scattering events provides information about the length scale distributions of material components. Samples for SAS studies may be prepared in situ or under near-native conditions and the measurements performed at various temperatures, pressures, flows, shears or stresses, and in a time-resolved fashion. In this Primer, we provide an overview of SAS, summarizing the types of instrument used, approaches for data collection and calibration, available data analysis methods, structural information that can be obtained using the method, and data depositories, standards and formats. Recent applications of SAS in structural biology and the soft-matter and hard-matter sciences are also discussed.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

New understanding of inter-ELM pedestal turbulence, transport, and gradient behavior in the DIII-D tokamak

New observations of pedestal localized turbulence in the inter-ELM period of H-mode plasmas in DIII-D show that ion temperature gradient mode scale (ITG-scale) density fluctuation (ñ) increases immediately after each ELM crash and is quickly suppressed during the increase in local E × B shear. This excitation and subsequent suppression of ITG-scale ñ can explain the previously reported anomalous ion heat flux, Qi during the ELM (Viezzer et al 2017 Nucl. Fusion 57 022020). Shorter wavelength trapped electron mode scale (TEM-scale) ñ starts to increase at a critical pedestal temperature gradient (∇Te,ped) and saturates as local E × B shear, ${T}_{\mathrm{i}}^{\mathrm{C}\mathrm{6}+}/{T}_{\mathrm{e}}$ ratio, and ∇Te,ped saturate. This TEM-scale ñ, which has the potential to cause electron (and also ion) heat transport, is consistent with driving an anomalous electron heat flux Qe, where Qe is estimated between ELMs using experimental profiles and power balance. Both ITG- and TEM-scale ñ amplitude variations with background Ti/Te and ∇ne,ped are found to be consistent with theoretical predictions of these measured density fluctuations being ITG and TEM instabilities respectively. Furthermore, these new and unique observations on the nature of turbulence and their potential contributions to electron and ion heat fluxes at different ELM periods (i.e. collapse, recovery, and saturation phases of pedestal gradients) can significantly test and improve our pedestal predictive capabilities for ITER and other future fusion devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Quasilinear theory and modelling of gyrokinetic turbulent transport in tokamaks

The theory, development, and validation of reduced quasilinear models of gyrokinetic turbulent transport in the closed flux surface core of tokamaks is reviewed. In combination with neoclassical collisional transport, these models are successful in accurately predicting core tokamak plasma temperature, density, rotation, and impurity profiles in a variety of confinement regimes. Refined experimental tests have been performed to validate the predictions of the quasilinear models, probing changes in the dominant gyrokinetic instabilities, as reflected in fluctuation measurements, cross-phases, and transport properties. These tests continue to produce a deeper understanding of the complex mix of instabilities at both electron and ion gyroradius scales.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Interfacial magnetic characteristics of nearly compensated gadolinium iron garnet

Reports on spin Hall magnetoresistance, magnonic spin currents from thermal gradients, and spin transfertorque magnetic random-access memory using compensated ferrimagnets largely discuss bulk magnetization but lack consideration of depth profiles or interfacial characteristics. Here, magnetic and structural characterization of profiles and interfaces was performed for nearly compensated gadolinium iron garnet (GdIG) thin films. X-ray diffraction and reciprocal space maps show that sputter deposited GdIG on Si is polycrystalline with the desired cubic garnet phase, and GdIG on gadolinium gallium garnet (GGG) is epitaxial with <0.06% compressive strain. Temperature-dependent magnetometry confirms the compensation temperatures of GGG/GdIG and Si/GdIG to be 285 and 260 K, respectively, both near room temperature. Interestingly, these measurements suggest the presence of unsaturated rare-earth moments, which result in a characteristic hysteresis between heating and cooling sequences in the magnetization-temperature curves at zero field. Depth-profile measurements from polarized neutron reflectometry (PNR) indicate up to 91% volume fraction in GdIG on Si. At the interface, PNR reveals a region containing magnetized Fe-doped GGG, a low-density GdIG at the GGG/GdIG interface, and a thin magnetically dead layer at the Si/GdIG interface. Cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy confirm the assessment of PNR. In conclusion, the magnetic characteristics of interfacial regions are attributed to intermixing of Fe-Ga at the GGG/GdIG interface and the presence of amorphous Fe-Si at the Si/GdIG interface.

36 MATERIALS SCIENCE↗

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Ultrawide bandgap heterojunction p–n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current–voltage characteristics show a turn-on voltage of Vbi≈5.5 V, a minimum room temperature ideality factor of η≈1.63, and more than 12 orders of current modulation at room temperature. A stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300 °C. The one-sided n+–p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance–voltage profile. The measured average mobile hole density is p∼5.7×1017 cm−3, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n+ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p–n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.

Physics↗

Design and engineering challenges of a multi-energy hard x-ray camera for long-pulse profile measurements at WEST tokamak

The WEST tokamak has recently been prepared for long pulse operation with a water-cooled full first wall. Heating is provided by radiofrequency systems, including Lower Hybrid Current Drive (LHCD). The Princeton Plasma Physics Laboratory has developed a multi-energy hard x-ray camera for profile measurements at WEST. The camera is based on a new generation of 2D pixel array detectors that allow the energy threshold to be independently set for each pixel. The diagnostic will provide spatial, temporal and energy resolved measurements of the hard x-ray emission from the full plasma cross-section, investigating several physical quantities such as the electron temperature from continuum emission, the fast electron tail density produced by radiofrequency current drive and runaway electrons, as well as characteristic tungsten x-rays due to beam-target emission at the edge. Overall, this work describes the engineering challenges that the WEST long pulse scenario poses for this diagnostic and how the design addresses and solves them. Vacuum, thermal stress and heat transfer calculations are presented and discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Dynamic RNA acetylation revealed by quantitative cross-evolutionary mapping

N 4 -acetylcytidine (ac 4 C) is an ancient and highly conserved RNA modification that is present on tRNA and rRNA and has recently been investigated in eukaryotic mRNA. However, the distribution, dynamics and functions of cytidine acetylation have yet to be fully elucidated. In this work, we report ac 4 C-seq, a chemical genomic method for the transcriptome-wide quantitative mapping of ac 4 C at single-nucleotide resolution. In human and yeast mRNAs, ac 4 C sites are not detected but can be induced—at a conserved sequence motif—via the ectopic overexpression of eukaryotic acetyltransferase complexes. By contrast, cross-evolutionary profiling revealed unprecedented levels of ac 4 C across hundreds of residues in rRNA, tRNA, non-coding RNA and mRNA from hyperthermophilic archaea. Ac 4 C is markedly induced in response to increases in temperature, and acetyltransferase-deficient archaeal strains exhibit temperature-dependent growth defects. Visualization of wild-type and acetyltransferase-deficient archaeal ribosomes by cryo-electron microscopy provided structural insights into the temperature-dependent distribution of ac 4 C and its potential thermoadaptive role. Our studies quantitatively define the ac 4 C landscape, providing a technical and conceptual foundation for elucidating the role of this modification in biology and disease.

59 BASIC BIOLOGICAL SCIENCES↗

EVs@Scale: NextGen Profiles EVSE Characterization 2025

As part of the U.S. DOE EVs@Scale consortium, the Next-Generation Profiles (NextGen Profiles [NGP]) project presents analysis and results from the characterization of high-power conductive and wireless charging infrastructure. High Power Charging equipment is capable of recharging electric vehicle traction batteries at power levels of 200KW and above. Electric Vehicle Service Equipment (EVSE) characterization involves testing over a wide range of DC charging currents and voltages during nominal and off-nominal conditions. This testing allows for a better understanding of the impact that high-power charging will have on the electric grid. A common set of standard test plans, procedures, and data requirements were applied to the characterization in this document with minor updates and improvements. This report covers all conductive characterization activities performed between October 2024 and September 2025 on the Delta Electronics 350KW Electric Vehicle Charging System, consisting of power cabinet model EIDN-U350KTA01 and dispenser model EIDD-U350SSUUAEG-350.Key Findings include: Output regulation, Efficiency and power factor, Load management, Grid Resilience, Smart Charge Management (SCM) performance, Thermal control system performance, Multi-port simultaneous charging performance, and Selected performance comparisons with other EVSEs characterized in the NextGen Profiles project. Hot and cold temperature testing was not conducted on the Delta 350KW due to laboratory limitations. Future research could include continued testing the Delta hardware under off-nominal temperature conditions including multi-port/multi-session simultaneous charge testing, in addition to collecting data on other high-power conductive chargers to augment.

25 ENERGY STORAGE↗

SPRUCE Redox-Active Subsurface Organic Matter, Marcell Experimental Forest, Minnesota, 2023

This dataset contains measurements that report on the effects of the SPRUCE experimental treatments on redox-active organic matter (RAOM) reduction (Valenzuela and Cervantes, 2021). Measurements occurred at the SPRUCE Experiment site in the Marcell Experimental Forest in northern Minnesota, USA. This work is also a follow-up to Rush et al. (2021a) which investigated effects of temperature on RAOM reduction after two years of experimental warming (Rush et al. 2021b). This follow-up dataset addresses two main questions; (i) How does warming and elevated carbon dioxide (CO2) directly affect in situ RAOM reduction, and subsequent methane (CH4) and CO2 production, across the peat depth profile? and (ii) How has long-term warming and elevated CO2 changed the total RAOM pool, and subsequent CH4 and CO2 production, across the peat depth profile? This dataset reports electron shuttling capacity (a proxy for RAOM reduction; Keller, and Takagi, 2013) and carbon dioxide (CO2) and methane (CH4) concentrations both in one-week in situ incubations (2023-05-31 to 2023-08-01) and 42-day laboratory incubations from peat collected in 2023 (2023-05-31 to 2023-06-26). Laboratory incubations also measured acetate concentrations. The 2023 laboratory incubations were also compared with laboratory incubations conducted on peat collected in 2016 (Rush et al. 2021b). This dataset contains three data files in comma-separate (.csv) format. Additional metadata are provided: three data dictionaries and a file-level metadata file in comma separate (.csv) format and a user guide in PDF (*.pdf) format.

54 ENVIRONMENTAL SCIENCES↗