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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Growth Dynamics and Electron Reflectivity in Ultrathin Films of Chiral Heptahelicene on Metal (100) Surfaces Studied by Spin-Polarized Low Energy Electron Microscopy

Interaction of electrons with chiral matter gives rise to interesting phenomena such as the chirality-induced spin selectivity. The interdependence of reflectivity of spin-polarized low energy electrons and the absolute handedness of chiral molecules is investigated. First, the growth of homochiral films of helical aromatic hydrocarbons, so-called helicenes, on a Cu(100) surface is studied by means of low energy electron microscopy and scanning tunneling microscopy in ultrahigh vacuum. As soon as the coverage exceeds one monolayer, double-layer nucleation and growth is favored such that depletion in the first layer occurs. Spatially resolved work function measurements show that second-layer patches have a lower work function than first-layer areas. Reflectivity spectra of spin-polarized electrons do not show any asymmetry between homochiral films of the enantiomers. Laterally resolved work function measurements do not confirm work function differences such as those reported earlier for photoelectron studies of chiral peptide films on ferromagnetic substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Single-Molecule Electron Transport in Peptoids

Peptoids are structural analogs of peptides in which side chains are appended to the backbone nitrogen rather than the α-carbon. The sequence-defined modularity of peptoids enables precise control over structure−function relationships, enabling applications in energy storage and biomedical materials. Despite recent progress, the role of sequence and conformation on electron transport in peptoid molecules is not fully understood. Here, we synthesize a library of peptoid oligomers and characterize their molecular electronic properties using the scanning tunneling microscope-break junction (STM-BJ) technique. Our results show well-defined electron transport behavior for peptoid sequences containing aromatic side groups lacking hydrogen bonds (H-bonds) and without chemical substitutions at the N−C α position. This behavior fundamentally differs from electron transport in peptides, where H-bond interactions give rise to higher conductance states. All-atom molecular dynamics (MD) simulations are used to understand the conformational heterogeneity of peptoids, and molecular conformations obtained from MD simulations are used in quantum mechanical calculations based on the nonequilibrium Green’s function−density functional theory (NEGF-DFT) formalism. In all cases, computational results are in reasonable qualitative agreement with experiments. Our work demonstrates that the conductance behavior of peptoids depends on monomer identity, including side-chain aromaticity and substitution at the N−C α position. Overall, this work provides new insights into the structure−function relationships governing electron transport in peptoid-based materials and establishes design rules for peptoid-based molecular junctions.

Charge transport↗
DOE OSTI2025

Engineering Design of D1/D3 Dipole Magnets for the Electron-Ion Collider (EIC)

Here, the Electron-Ion Collider (EIC) at Brookhaven National Laboratory (BNL) is designed to deliver a peak luminosity of 10 34 cm −2 s −1 . An electron storage ring (ESR) will be installed in the existing Relativistic Heavy Ion Collider (RHIC) tunnel and will store polarized electron beams from 5 to 18 GeV. The ESR will have 750 dipole magnets with varying field requirements, including 576 super-bend triplets consisting of two magnets D1/D3 and D2. This paper presents on the engineering design of the D1/D3 dipole magnets within the arcs, with special focus on the coil design that allows the magnet to be configured for variable ampere-turns per energy.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1999

Design of the Wind Tunnel Model Communication Controller Board

The NASA Langley Research Center's Wind Tunnel Reinvestment project plans to shrink the existing data acquisition electronics to fit inside a wind tunnel model. Space limitations within a model necessitate a distributed system of Application Specific Integrated Circuits (ASICs) rather than a centralized system based on PC boards. This thesis will focus on the design of the prototype of the communication Controller board. A portion of the communication Controller board is to be used as the basis of an ASIC design. The communication Controller board will communicate between the internal model modules and the external data acquisition computer. This board is based around an Field Programmable Gate Array (FPGA), to allow for reconfigurability. In addition to the FPGA, this board contains buffer Random Access Memory (RAM), configuration memory (EEPROM), drivers for the communications ports, and passive components.

Wilson, William C.↗
DOE OSTI2021

Interfacial electron-phonon coupling and quantum confinement in ultrathin Yb films on graphite

Interfacial electron-phonon coupling in ultrathin films has attracted much interest recently. Here, by combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we report quantized electronic states and strong interfacial electron-phonon coupling in ultrathin Yb films on graphite. We observed clear kinks in the energy-momentum dispersion of quantum well states, and the kink positions agree well with the energies of optical phonons of graphite. The extracted coupling strength λ is largest for the thinnest film with a preferred (“magic”) thickness of four monolayers and exhibits a strong band dependence, which can be qualitatively accounted for by a simple model. The interfacial electron-phonon coupling also gives rise to characteristic steplike structures in the $dI/dV$ spectra, implying dominant coupling with the phonons with zero in-plane momentum. A Lifshitz transition occurs at higher coverage, where quantum well states derived mainly from 5d electrons dominate near the Fermi level and possess large effective mass (up to ~ 19 m e ). Here our results highlight the potentially important role of interfacial electron-phonon interaction for ultrathin films and provide spectroscopic insight to understand this cross-interface fermion-boson interaction.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Epitaxial growth of monolayer PdTe 2 and patterned PtTe 2 by direct tellurization of Pd and Pt surfaces

Two-dimensional (2D) palladium ditelluride (PdTe 2 ) and platinum ditelluride (PtTe 2 ) are two Dirac semimetals, which have fascinating quantum properties such as superconductivity, magnetism and topological order and show the promising applications in future nanoelectronics and optoelectronics. However, the synthesis of PdTe 2 and PtTe 2 monolayers (MLs) is hindered by a strong interlayer coupling and orbital hybridization. Here, in this study, we demonstrate an efficient synthesis of PdTe 2 and PtTe 2 MLs Large-area and high quality MLs of PdTe 2 and patterned PtTe 2 were epitaxially grown on the Pd(111) and Pt(111) surfaces by direct telurization in ultra-high vacuum. This was confirmed by x-ray photoelectron spectroscopy, low energy electron diffraction and scanning tunnelling microscopy. PdTe 2 ML demonstrated high thermal stability showing no decomposition sign after annealing at 470 °C. A well-ordered (2 × 2) PtTe 2 structure with Kagome lattice was observed on Te/Pt(111) surface following annealing at 200 °C in UHV, where the (2 × 2) pattern was formed by Te atom vacancies. PtTe 2 multilayer film was prepared as well, and it demonstrated the excitation of the Dirac plasmons as measured by high-resolution electron energy loss spectroscopy. The direct tellurization offers the simple and reliable protocol for the preparation of the ML of PdTe 2 and patterned PtTe 2 , and this opens new opportunities for quantum phenomena research and for practical optoelectronics applications.

2D materials↗
DOE OSTI2025

The Surface Chemistry of Methanol on Cu 3 Pd(111): Effects of Metal Alloying and Reaction with Hydrogen

Synchrotron-based ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) was used to study the adsorption and surface chemistry of methanol on a Cu 3 Pd(111) model surface. The composition and morphological properties of the pristine Cu 3 Pd(111) substrate were analyzed using a combination of low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), and low-energy ion scattering (LEIS). The results of ion scattering showed segregation of Pd toward the surface, with a Pd/Cu ratio close to 0.5, a larger value than the ratio of 0.33 expected for a Cu 3 Pd bimetallic structure. The surface of the alloy exhibited a good LEED pattern with three-fold long-range periodicities. In STM, clusters of palladium with hexagonal arrays and Pd- Pd distances of 2.7-2.8 Å were detected. Bonding to copper perturbed the electronic properties of the atoms in the Pd clusters, shifting their 4d states toward higher binding energy with respect to the Fermi level. Further, the valence band spectrum of Cu 3 Pd(111) exhibited a line shape that was very different from those displayed by Cu(111) or Pd(111). At low pressures, the adsorption of methanol on Cu 3 Pd(111) at 300 K mainly produced CH 3 O, CO and CH x species. AP-XPS showed that most Pd atoms in the surface of the Cu 3 Pd(111) alloy interacted with the decomposition products of methanol. No significant changes were observed in the core levels of copper upon the adsorption and dissociation of methanol, suggesting that the molecule mainly interacted with Pd sites of the alloy. Reaction with hydrogen led to fast removal of CH x , C and PdC x species from Cu 3 Pd(111) at moderate (< 450 K) temperatures and prevented a CH x → C transformation. If the stability of adsorbed CH 3 O is used as a descriptor for the hydrogenation of CO 2 to methanol, Cu 3 Pd should be a much better catalyst than monometallic palladium. This may be a consequence of electronic and ensemble effects in the alloy that moderate the reactivity of Pd sites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Progress toward picosecond on-chip magnetic memory

Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

42 ENGINEERING↗
DOE OSTI2025

Quasiperiodic potassium adlayer on decagonal Al–Ni–Co quasicrystal

Quasiperiodicity in free-electron-like metals is a subject of significant interest within the scientific community. In this work, utilizing scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and density functional theory (DFT), we demonstrate the formation of a quasiperiodic potassium monolayer on the tenfold surface of decagonal Al–Ni–Co quasicrystal. A dispersed growth comprising of isolated K adatoms is observed at sub-monolayer coverage, which coalesce with increasing coverage and forms pentagonal and decagonal quasiperiodic motifs. LEED demonstrates distinct rings of spots displaying decagonal symmetry. Furthermore, our DFT calculation using the W-approximant surface that closely resembles d-Al–Ni–Co shows that sizable adsorbate-substrate interaction makes the potassium adatoms bind to the quasiperiodically dispersed favorable adsorption sites resulting in the formation of quasiperiodic potassium monolayer. Notably, the experimental motifs obtained from STM measurements align remarkably well with the DFT predictions, underscoring the intricate relationship between the electronic structure of the substrate that drives the quasiperiodic growth of the potassium adlayer.

alkali metal↗
DOE OSTI2024

Strain-modulated intercalated phases of Pb monolayer with dual periodicity in SiC(0001)-graphene interface

Intercalation of metal atoms at the SiC(0001)-graphene (Gr) interface can provide confined 2D metal layers with interesting electronic properties. The intercalated Pb monolayer (ML) has shown the coexistence of the Gr(10 x 10)-moiré and a stripe phase, which still lacks understanding. Using density functional theory calculation and thermal annealing with ab initio molecular dynamics as motivated by experiment, we have studied the formation energy of Gr/Pb/SiC(0001) for different Pb coverages. Near the coverage of a Pb(111)-like ML mimicking the (10 x 10)-moiré, we find a slightly more stable stripe structure, where one half of the structure has compressive strain with Pb occupying the Si-top sites and the other half has tensile strain with Pb off the Si-top sites. This stripe structure along the Gr zigzag direction has a periodicity of 2.3 nm across the [1$\overline{2}$10] direction agreeing with the previous observations using scanning tunneling microscopy. Analysis with electron density difference and density of states show the tensile region has a more metallic character than the compressive region, while both are dominated by charge transfer from Pb ML to SiC(0001). As a result, the small energy difference between the stripe and Pb(111)-like structures means the two phases are almost degenerate and can coexist, which explains the experimental observations.

36 MATERIALS SCIENCE↗
NASA NTRS1994

The effect of Low Earth Orbit exposure on some experimental fluorine and silicon-containing polymers

Several experimental fluorine and silicon-containing polymers in film form were exposed to low Earth orbit (LEO) on a Space Shuttle flight experiment (STS-46, Evaluation of Oxygen Interaction with Materials, EOIM-3). The environmental parameters of primary concern were atomic oxygen (AO) and ultraviolet (UV) radiation. The materials were exposed to 2.3 plus or minus 0.1 x 10(exp 20) oxygen atoms/sq cm and 30.6 UV sun hours during the flight. In some cases, the samples were exposed at ambient, 120 C and 200 C. The effects of exposure on these materials were assessed utilizing a variety of characterization techniques including optical, scanning electron (SEM) and scanning tunneling (STM) microscopy, UV-visible (UV-VIS) transmission, diffuse reflectance infrared (DR-FTIR), x-ray photoelectron (XPS) spectroscopy, and in a few cases, gel permeation chromatography (GPC). In addition, weight losses of the films, presumably due to AO erosion, were measured. The fluorine-containing polymers exhibited significant AO erosion and exposed films were diffuse or 'frosted' in appearance and consequently displayed dramatic reductions in optical transmission. The silicon-containing films exhibited minimum AO erosion and the optical transmission of exposed films was essentially unchanged. The silicon near the exposed surface in the films was converted to silicate/silicon oxide upon AO exposure which subsequently provided protection for the underlying material. The silicon-containing epoxies are potentially useful as AO resistant coatings and matrix resins as they are readily processed into carbon fiber reinforced composites and cured via electron radiation.

Connell, John W.↗
DOE OSTI2023

Targeted Dy intercalation under graphene/SiC for tuning its electronic band structure

Metal intercalation of graphene is a promising method to tune its electronic band structure and generate novel electronic and topological phases. The tuning depends critically on the ability to bond the intercalated atoms at predesigned, subsurface interlayer locations because the emerging band structure depends on metal location. In this work, we have studied Dy intercalation under single-layer graphene (SLG) on SiC using spot profile analysis–low-energy electron diffraction and scanning tunneling microscopy (STM). The experimental work is complemented with density-functional theory (DFT) analysis. Because different diffraction spots originate from different subsurface interlayer regions, it is possible to identify changes in the intercalation location by monitoring the spot intensity as a function of growth conditions. DFT calculations of the chemical potential as a function of intercalated Dy coverage support the variation of the stability of the intercalated phase at different intercalated locations. The preferred location is confirmed from STM studies showing the removal of the 6 × 6 moiré corrugation at the preferred location, observed at higher Dy coverage.

2-dimensional systems↗
DOE OSTI2020

Atomic-scale control of tunneling in donor-based devices

Atomically precise donor-based quantum devices are a promising candidate for solid-state quantum computing and analog quantum simulations. However, critical challenges in atomically precise fabrication have meant systematic, atomic scale control of the tunneling rates and tunnel coupling has not been demonstrated. Here using a room temperature grown locking layer and precise control over the entire fabrication process, we reduce unintentional dopant movement while achieving high quality epitaxy in scanning tunnelling microscope (STM)-patterned devices. Using the Si(100)2 × 1 surface reconstruction as an atomically-precise ruler to characterize the tunnel gap in precision-patterned single electron transistors, we demonstrate the exponential scaling of the tunneling resistance on the tunnel gap as it is varied from 7 dimer rows to 16 dimer rows. We demonstrate the capability to reproducibly pattern devices with atomic precision and a donor-based fabrication process where atomic scale changes in the patterned tunnel gap result in the expected changes in the tunneling rates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2001

Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

We study recently reported drain current I(sub d)-drain voltage V(sub d) characteristics of a carbon nanotube metal-semiconductor diode device with the gate voltage V(sub g) applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative V(sub g) blocked I(sub d) more effectively in the negative V(sub d) region, resulting in the rectifying I(sub d)-V(sub d) characteristics, and that (2) positive V(sub g) allowed I(sub d) in the both V(sub d) polarities, resulting in the non-rectifying characteristics. The negative V(sub d) was the Schottky reverse direction, judging from the negligible I(sub d) behavior for a wide region of -4 V (is less than) V(sub d) (is less than) 0 V, with V(sub g) = -4 V. Such negative V(sub g) would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (E(sub F)). With larger negative V(sub g), the experiment showed that the Schottky forward direction (V(sub d) (is greater than) 0) had a smaller turn-on voltage and the Schottky reverse direction (V(sub d) (is less than) 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when E(sub F) is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when E(sub F) is lowered.

Yamada, Toshishige↗
NASA NTRS2002

Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

We study recently reported drain current Id-drain voltage Vd characteristics of a carbon nanotube metal semiconductor diode device with the gate voltage Vg applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative Vg blocked Id more effectively in the negative Vd region, resulting in the rectifying Id-Vd characteristics, and that (2) positive Vg allowed Id in the both Vd polarities, resulting in the non-rectifying characteristics. The negative Vd was the Schottky reverse direction, judging from the negligible Id behavior for a wide region of -4 V less than Vd less than 0 V, with Vg = -4 V. Such negative Vg would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (EF). With larger negative Vg, the experiment showed that the Schottky forward direction (Vd greater than 0) had a smaller turn-on voltage and the Schottky reverse direction (Vd less than 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when EF is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when EF is lowered.

Yamada, Toshishige↗
DOE OSTI2021

Synthesis, Magnetic Properties, and Electronic Structure of Magnetic Topological Insulator MnBi 2 Se 4

The intrinsic magnetic topological insulators MnBi 2 Te 4 and MnBi 2 Se 4 support novel topological states related to symmetry breaking by magnetic order. Unlike MnBi 2 Te 4 , the study of MnBi 2 Se 4 has been inhibited by the lack of bulk crystals, as the van der Waals (vdW) crystal is not the thermodynamic equilibrium phase. In this study, we report the layer-by-layer synthesis of vdW MnBi 2 Se 4 crystals using nonequilibrium molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy and scanning tunneling microscopy identify a well-ordered vdW crystal with septuple-layer base units. The magnetic properties agree with the predicted layered antiferromagnetic ordering but disagree with its predicted out-of-plane orientation. Instead, our samples exhibit an easy-plane anisotropy, which is explained by including dipole–dipole interactions. Angle-resolved photoemission spectroscopy reveals the gapless Dirac-like surface state, which demonstrates that MnBi 2 Se 4 is a topological insulator above the magnetic-ordering temperature. These studies show that MnBi 2 Se 4 is a promising candidate for exploring rich topological phases of layered antiferromagnetic topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Twist-angle dependence of moiré excitons in WS 2 /MoSe 2 heterobilayers

Moiré lattices formed in twisted van der Waals bilayers provide a unique, tunable platform to realize coupled electron or exciton lattices unavailable before. While twist angle between the bilayer has been shown to be a critical parameter in engineering the moiré potential and enabling novel phenomena in electronic moiré systems, a systematic experimental study as a function of twist angle is still missing. Here we show that not only are moiré excitons robust in bilayers of even large twist angles, but also properties of the moiré excitons are dependant on, and controllable by, the moiré reciprocal lattice period via twist-angle tuning. From the twist-angle dependence, we furthermore obtain the effective mass of the interlayer excitons and the electron inter-layer tunneling strength, which are difficult to measure experimentally otherwise. These findings pave the way for understanding and engineering rich moiré-lattice induced phenomena in angle-twisted semiconductor van der Waals heterostructures.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗