Spherical focused blast device
Focusing blast accuracy for antiaircraft missile warheads using a sphere of Composition C-4
ANTIAIRCRAFT MISSILE↗
SEARCH · Search NASA
Results for “FOCUSING”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Focusing of Charged Particles with Hemispherical Grids
Focusing of charged particles with pair of concentric spherical grids
FOCUSING↗
Focusing hologram diffraction grating.
Interferometer producing focusing hologram diffraction grating, noting photograph of spectrum
SPECTROGRAPHY↗
Interaction of high intensity focused ultrasound with biological materials
This work is motivated by the possible medical application of focused ultrasound in minimally invasive treatment of a variety of disorders including those associated with soft tissue or disk element disruption in the vicinity of the spine causing impingement on the spinal cord.
focused ultrasound HIFU PZFlex↗
Analysis of the Amplitude Response of a Two-Point and a Two-Line/Multi-Point Focused Laser Differential Interferometer
Experiments were performed with two different focused laser differential interferometer (FLDI) instruments to assess the amplitude response of each instrument to a traveling shock-wave generated by a laser spark. The first FLDI instrument generated two measurement points, with each measurement point providing sensitivity to density fluctuations induced by the shockwave. By performing a cross-correlation between the signals obtained from each measurement point, the phase velocity of density fluctuations can be obtained. The second FLDI instrument generated two measurement lines that are oriented either parallel or orthogonal to the shockwave direction of travel with the resulting interference pattern sampled at multiple equally-spaced points along each line. As a result, this instrument provides density fluctuation measurement capability at multiple points simultaneously. When the measurement lines are oriented parallel to the shockwave direction of travel, the phase velocity, rate of change of the phase velocity, and acceleration of density fluctuations traveling along each line can be obtained by performing a cross-correlation between points along a single line. When the measurement lines are oriented orthogonal to the shockwave direction of travel, the spatially-varying phase velocity can be obtained by performing a cross-correlation between points at the same relative location on each measurement line. Computations of the shockwave generated by the laser spark are used to simulate the response of each instrument and are compared to the experimental results. High-speed Schlieren imaging has also been performed and is compared with the FLDI measurements and computational results.
Focused Laser Differential Interferometer↗
Attention Focusing and Anomaly Detection in Systems Monitoring
Any attempt to introduce automation into the monitoring of complex physical systems must start from a robust anomaly detection capability. This task is far from straightforward, for a single definition of what constitutes an anomaly is difficult to come by. In addition, to make the monitoring process efficient, and to avoid the potential for information overload on human operators, attention focusing must also be addressed. When an anomaly occurs, more often than not several sensors are affected, and the partially redundant information they provide can be confusing, particularly in a crisis situation where a response is needed quickly.
systems↗
Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
Heavy ion, focused X-ray, pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. The transient shape characteristics depend on the source (ion, X-ray, or laser), even when similar amounts of charge are generated. The observed differences are examined and explained in terms of basic charge collection mechanisms.
Heavy ions↗
Simultaneous Focused Laser Differential Interferometry and High-Speed Schlieren in a Mach 6 Flow
An instrument is demonstrated that is capable of simultaneous and independent flow density fluctuation measurements over the same line-of-sight by combining two optical techniques: focused laser differential interferometry (FLDI) and high-speed schlieren (HSS). The FLDI instrument measures fluctuations at a single point in the flowfield at 10 MHz, with the resulting signal most sensitive in the region nearest the focal plane of the FLDI laser beam. The HSS instrument acquires images at 20 kHz along the same optical axis as the FLDI beam, but with the resulting signal path averaged over the entire HSS line-of-sight. The introduction of the HSS optics into the FLDI beam path provides two high-quality measurement capabilities in a single system with no degradation of performance relative to stand-alone FLDI or HSS instruments.
Focused Laser Differential Interferometry↗
Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode
Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response.
Heavy ions↗
Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode
Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response for these relatively large devices.
Focused X-ray↗
High-Speed Self-Aligned Focusing Schlieren and Background-Oriented Schlieren with Pulsed Laser Illumination
Laser light sources are commonly used in schlieren-based flow visualization techniques that are in development at NASA Langley Research Center. Of particular interest are high-intensity, low coherence sources that allow for high signal-to-noise schlieren imagery to be acquired without the laser speckle that typically occurs as a result of interference. Results from a self-aligned focusing schlieren system developed at NASA Langley and a background-oriented schlieren system are presented to highlight the effectiveness of these sources.
Schlieren↗
Recent Progress and Development of Self-Aligned Focusing Schlieren
A broad range of developments and applications of self-aligned focusing schlieren (SAFS)systems is presented. The replacement of the Ronchi ruling (RR) with a𝜇LCD was demonstrated with digital SAFS, which provides the ability to modulate the pattern and orientation without physical intervention. Additionally, replacement of the traditional RR with spectral-spatial filters was demonstrated to yield the ability to simultaneously image horizontal and vertical index of refraction gradients using two separate wavelengths. The application of the Scheimpflug principle to SAFS systems enables off-axis imaging and allowed for extended fields-of-view to be captured using a two-camera system. The addition of a plenoptic camera to a baseline SAFS system enables refocusing capabilities, which is demonstrated on two jets offset along the optical axis. Furthermore, application of an event-based camera to SAFS was shown to enable acquisition of sparse, spatio-temporal data. Beyond the listed developments, SAFS was applied to difficult and constraining facilities, such as the National Full-Scale Aerodynamics Complex(NFAC) 80- by 120-ft Wind Tunnel and the Thermal Acoustic Engines (TAE) rig at NASA Ames Research Center and NASA Glenn Research Center, respectively. Behavior of Ronchi rulings, Rochon prisms, and the use of quarter-wave plates versus quarter-wave films are evaluated to provide insight for future experimental design of SAFS-systems.
Self-Aligned Focusing Schlieren↗
Thermoreflectance Detection of Point Defects Resulting from Focused Ion Beam Milling
Focused ion beam (FIB) milling is a commonly used tool for nanoscale material processing, such as for transmission electron microscopy (TEM) sample preparation, or the creation of fiducial markers prior to other processes and measurements. During milling, a high energy ion beam is used to remove material via sputtering. The expelled target material may return to the sample surface however, affecting subsequent measurements. Beam spreading or irradiation due to neutral gallium may also irradiate a larger area than intended. Extensive research has explored the effects of FIB milling on the prepared TEM sample, but few have looked at the effects of milling on the properties of the sample surrounding the milled region. We use multiple pump-probe laser-based techniques (time domain thermoreflectance and steady-state thermoreflectance) to measure the spatial extent of FIB-induced surface/subsurface changes on a series of silicon wafers milled at multiple currents and doses. We supplement these measurements with high-resolution scanning transmission electron microscopy, energy dispersive X-ray spectroscopy, stylus profilometry, and time-of-flight secondary ion mass spectroscopy. We find a sample surface affected by the FIB up to 1 mm from where milling occurred, with a notable dependence on the ion beam current. We also note remarkably high sensitivity to surface defects using the thermoreflectance metrologies, including detection where other measurements failed.
defects↗
Nanoscale Editing of Multi and Single Layer Tungsten Disulfide via Gas‐Assisted Focused Electron Beam Induced Etching for Device Prototyping
Focused electron beam induced etching (FEBIE) with XeF 2 (xenon difluoride) precursor is conducted on multi-layer exfoliated WS 2 (tungsten disulfide) and monolayer WS 2 grown by chemical vapor deposition (CVD). The films are characterized by atomic force microscopy (AFM) and Raman and photoluminescence (PL) spectroscopy post-etching. The etch rates/efficiencies are reported as a function of electron beam energy, current, dwell time, and XeF 2 pressure. Bulk film Raman spectra are unchanged post-FEBIE, indicating minimal subsurface damage. Monolayer WS 2 shows a decrease in Raman and PL intensity post-FEBIE, with a dose-to-clear of ≈2 nC µm −2 . The study reveals regimes affected by the various mass transport contributions such as refresh time and the ratio of electrons/XeF 2 . Spontaneous etching was discovered during FEBIE of large patterned areas due to the long frame/refresh times. Density functional theory and ab initio molecular dynamics simulations compares desorption of SF x and WF x molecules from pristine WS 2 basal planes and pore edges, revealing the spontaneous etching is consistent with etching of partially etched monolayers during each frame. Single-line etching width of 21 nm, and patterning flakes into 100 nm wide channels are demonstrated. In conclusion, this work demonstrates the possibility of editing WS 2 flakes into electronic devices of arbitrary dimensions for semiconductor applications.
2D materials↗
Focused Helium Ion Beam for Direct Patterning of Monolayer MoS 2 Nanoribbon Field Effect Devices
The helium ion microscope (HIM) focused ion beam (FIB) has emerged as a powerful tool to directly pattern nanostructures below 10 nm due to its high-resolution capabilities and the inert nature of the ion source. These attributes make HIM FIB particularly interesting for patterning 2D materials such as transition metal dichalcogenides (TMDs) to investigate transport phenomena at the nanoscale. Reported here is the fabrication of MoS 2 nanoribbon devices using HIM FIB-induced etching (FIBIE) with XeF 2 , allowing for reduced ion dose compared to direct sputtering. While patterning is efficacious, the devices exhibit performance degradation with decreasing nanoribbon width due to damage up to 150 nm beyond the patterned edge. Incorporating an hBN encapsulation improves device performance by one order of magnitude, although the lateral extent of damage remains unchanged. The spatial distribution of damage is shown to be determined by the forward- and backscattered ions and electrons, while the hBN encapsulation layer substantially reduces damage from XeF 2 interactions in unexposed regions. Raman and photoluminescence (PL) measurements corroborate these findings, while ion/solid interaction simulations further elucidate the resolution limits imposed by substrate interactions. In conclusion, this work provides critical insights and a practical pathway for utilizing HIM FIBIE in 2D TMD functional device patterning.
MoS 2↗
Radiation Response of Ga 2 O 3 MOSFETs Probed via Focused Particle Beams
Gallium Oxide (Ga 2 O 3 ), particularly in its β-phase, is attracting lots of interest for high-power and high-voltage electronics due to its wide bandgap, high breakdown field, and thermal stability. This study investigates the radiation response of Ga 2 O 3 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Total Ionizing Dose (TID) and Displacement Damage (DD) conditions, which are critical for applications in radiation environments. Utilizing a dual-beam Focused Ion Beam and Scanning Electron Microscope setup, microscale analysis of radiation effects on individual devices is performed. The findings reveal distinct behaviors under TID and DD + TID conditions, with TID leading to threshold voltage shifts due to trapped charges, while DD results in decreased drive current attributed to increased carrier scattering from lattice defects. Notably, it is demonstrated that the TID effect can be mitigated through dynamic threshold voltage adjustments and that the predicted TID from ions calculated by Monte Carlo simulations overestimates actual TID due to unaccounted charge yield effects. In conclusion, this research enhances the understanding of Ga2O3 MOSFETs' performance in harsh radiation environments, providing insights for the design of robust electronic devices for space and nuclear applications.
MOSFET↗
Discrete Max-Focusing
The Quantum Focusing Conjecture (QFC) lies at the foundation of holography and semiclassical gravity. The QFC implies the Bousso bound and the Quantum Null Energy Condition (QNEC). The QFC also ensures the consistency of the quantum extremal surface prescription and bulk reconstruction in AdS/CFT. However, the central object in the QFC — the expansion of lightrays — is not defined at points where geodesics enter or leave a null congruence. Moreover, the expansion admits three inequivalent quantum extensions in terms of the conditional max, min, and von Neumann entropies.
AdS-CFT Correspondence↗
A proximity-focusing RICH detector for the ePIC Experiment at the EIC
The Electron-Proton/Ion Collider Experiment (ePIC) will be a large, multi-purpose detector to be installed at the Electron-Ion Collider (EIC) being built at Brookhaven National Laboratory. As robust particle identification (PID) capabilities are essential for fully realizing the EIC science program, ePIC contains several PID subsystems spanning different angular ranges. PID capability in the electron-going endcap is provided by a proximity-focusing Ring Imaging Cherenkov detector (pfRICH) designed to deliver at least 3σ separation between pions and kaons for momenta up to 7 GeV/ c . It will also aid with electron-hadron discrimination at low momentum and assist in the determination of the collision time (t 0 ). This contribution will summarize the design of the pfRICH as well as ongoing fabrication and component testing efforts. geant-based performance simulations will also be discussed.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗