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Results for “GALLIUM ARSENIDE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Photocathodes for use in the large space telescope program

Photocathode materials are discussed in terms of those that are presently available and those that are becoming available. Charts are given which illustrate the response curves of the representative photocathodes. It can be seen from the curves that a relatively new class of photocathodes has been developed with responses equal to or much better than commercially available photocathodes over a very wide spectral range. In particular, the solid gallium arsenide photocathode has an increased efficiency over the standard S-1 in the infrared region of almost two orders of magnitude. A table is presented which describes the principle photocathodes and lists some of the important characteristics of each.

Spicer, W. E.↗
NASA NTRS1974

Optical properties of thin gold films applied to Schottky barrier solar cells

The Schottky barrier solar cell is considered a possible candidate for converting solar to electrical energy both for space and terrestrial applications. Knowledge of the optical constants of the ultrathin metal film used in the cell is essential for analyzing and designing higher efficiency Schottky barrier cells. The optical constants of 7.5 -nm (75-A) gold films on gallium arsenide have been obtained. In addition, the absolute collection efficiency of Schottky barrier solar cells has been determined from measured spectral response and optical constants of the gold film.

YEH Y. M.↗
NASA NTRS1974

An experiment in manipulator control with proximity sensors

Optical proximity sensors were used in a feedback loop to automatically position a manipulator hand for grasping. The experiment was a simplified one, involving two dimensional motion only. Two proximity sensors were mounted on the hand, and control signals derived from their outputs were used to drive the hand vertically and horizontally. The sensors employ a pulsed gallium arsenide light-emitting diode together with a silicon detector. They indicate, without contact, the approximate distance between the manipulator hand and object in the range from 5 to 12 cm. Positioning within approximately + or - 5 mm was observed. Extension of the technique to general three-dimensional control is briefly discussed.

Johnston, A. R.↗
NASA NTRS1973

Theoretical and experimental investigations of collective microwave phenomena in solids

Methods of generating microwave shear waves efficiently were studied. A new technique of mode conversion from a longitudinal wave to a shear wave was investigated and virtually 100% conversion efficiency could be obtained. Several aspects of Gunn oscillators were studied. One involved the detailed study of domains in Gunn oscillators using long samples of bulk gallium arsenide. Several new techniques were devised for measuring the properties of the domains. A fundamental theory of the efficiency of a Gunn oscillator was worked out. A computer program was devised to study the transient effect of domains passing through Gunn diodes. Some of the first planar epitaxial Gunn oscillators were made using liquid epitaxial material grown by liquid phase techniques on semi-insulating substrate. A new theory which predicted the properties of RF signals propagating in a thin film layer of GaAs was developed. The theory of the operation of a traveling wave amplifier is described.

Kino, G. S.↗
NASA NTRS1973

Research study on materials processing in space, experiment M512

Gallium arsenide, a commercially valuable semiconductor, has been prepared from the melt (M.P. 1237C), by vapor growth, and by growth from metallic solutions. It has been established that growth from metallic solution can produce material with high, and perhaps with the highest possible, chemical homogeneity and crystalline perfection. Growth of GaAs from metallic solution can be performed at relatively low temperatures (about 600C) and is relatively insensitive to temperature fluctuations. However, this type of crystal growth is subject to the decided disadvantage that density induced convection currents may produce variations in rates of growth at a growing surface. This problem would be minimized under reduced gravity conditions.

Rubenstein, M.↗
NASA NTRS1973

Materials processing in zero gravity

Manufacturing processes which are expected to show drastic changes in a space environment due to the absence of earth gravity are classified according to (1) buoyancy and thermal convection sensitive processes and (2) processes where molecular forces like cohesion and adhesion remain as the relatively strongest and hence controlling factors. Some specific process demonstration experiments carried out during the Apollo 14 mission and in the Skylab program are described. These include chemical separation by electrophoresis, the M551 metals melting experiment, the M552 exothermic brazing experiment, the M553 sphere forming experiment, the M554 composite casting experiment, and the M555 gallium arsenide crystal growth experiment.

Wuenscher, H. F.↗
NASA NTRS1975

A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell

A new effect is being developed which significantly improves the conversion efficiency of antireflection-coated metal-oxide-semiconductor (AMOS) solar cells. The effect, a marked increase in the open-circuit voltage, is produced by the addition of an oxide layer to the semiconductor. Cells using gold on n-type gallium arsenide have been made with efficiencies up to 15% in terrestrial sunlight. All processing steps are amenable to the use of low-cost polycrystalline films of GaAs in place of the single crystals now used.

Stirn, R. J.↗
NASA NTRS1976

Pulse transformer for GaAs laser

High-radiance gallium arsenide (GaAs) laser operating at room temperature is utilized in optical navigation system. For efficient transformer-to-laser impedance match, laser should be connected directly to pulse transformer secondary winding.

Rutz, E. M.↗
NASA NTRS1975

Electrical characterization of GaAs single crystal in direct support of M555 flight experiment

The exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out during the period ending May 1974. Two methods of obtaining the microwave skin depth, one for the mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space-related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.

Castle, J. G.↗
NASA NTRS1975

Electrical characterization of GaAs single crystal in direct support of M555 flight experiment

An exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out. Two methods of obtaining the microwave skin depth, one for mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.

Castle, J. G.↗
NASA NTRS1975

The AMOS cell - An improved metal-semiconductor solar cell

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

Stirn, R. J.↗
NASA NTRS1976

A comparison of GaAs and Si hybrid solar power systems

An analytical comparison of energy output from various silicon and gallium arsenide hybrid solar power systems, producing electric power and also thermal power for heating or cooling, is made. System performance indices in terms of capital cost, peak power, total power output, and electric power were evaluated. Limiting values for annual energy production from GaAs and Si solar concentrator systems were estimated to be 2 cents and 6.8 cents per kWh for GaAs concentrator systems and between 2.5 cents and 11 cents per kWh for Si concentrator systems.

Heinbockel, J. H.↗
NASA NTRS1977

Analysis of GaAs and Si solar energy hybrid systems

Various silicon hybrid systems are modeled and compared with a gallium arsenide hybrid system. The hybrid systems modeled produce electric power and also thermal power which can be used for heating or air conditioning. Various performance indices are defined and used to compare the system performance: capital cost per electric power out; capital cost per total power out; capital cost per electric power plus mechanical power; annual cost per annual electric energy; and annual cost per annual electric energy plus annual mechanical work. These performance indices indicate that concentrator hybrid systems can be cost effective when compared with present day energy costs.

Heinbockel, J. H.↗
NASA NTRS1976

Errors in short circuit measurements due to spectral mismatch between sunlight and solar simulators

Errors in short circuit current measurement were calculated for a variety of spectral mismatch conditions. The differences in spectral irradiance between terrestrial sunlight and three types of solar simulator were studied, as well as the differences in spectral response between three types of reference solar cells and various test cells. The simulators considered were a short arc xenon lamp AMO sunlight simulator, an ordinary quartz halogen lamp, and an ELH-type quartz halogen lamp. Three types of solar cells studied were a silicon cell, a cadmium sulfide cell and a gallium arsenide cell.

Curtis, H. B.↗
NASA NTRS1977

Cameras for semiconductor process control

The application of X-ray topography to semiconductor process control is described, considering the novel features of the high speed camera and the difficulties associated with this technique. The most significant results on the effects of material defects on device performance are presented, including results obtained using wafers processed entirely within this institute. Defects were identified using the X-ray camera and correlations made with probe data. Also included are temperature dependent effects of material defects. Recent applications and improvements of X-ray topographs of silicon-on-sapphire and gallium arsenide are presented with a description of a real time TV system prototype and of the most recent vacuum chuck design. Discussion is included of our promotion of the use of the camera by various semiconductor manufacturers.

Porter, W. A.↗