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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
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NASA NTRS2024

The Isotopic Composition of Molecular Water Formed by Hydrogen Reduction of Iron Oxides: A Proxy for Endogenous Water Formed From Solar Wind Implantation

Many workers have successfully utilized a variety of lunar materials to infer the sources and processing history of volatiles on the Moon. In situ techniques via NanoSIMS have enabled a plethora of hydrogen isotope measurements of isolated grains in regolith and apatite within igneous rocks, revealing an extraordinarily large range of δD values from ~ -900 to +1000‰. The lowest of these δD values are related to the incorporation of solar wind hydrogen, which is pure 1 H. Exposure to solar wind results in structural damage to crystalline phases, forming ubiquitous tens-to-hundreds of nanometer thick amorphous rims on mature regolith grains. Solar wind implantation of H + is also is also thought to result in the formation of nanophase Fe 0 (npFe), a quantitative metric of surface exposure time (e.g., Is/FeO). The formation of npFe can be generally described via the reaction: Fe 2+ O + H 2 = Fe 0 + H 2 O, resulting in the formation of endogenous molecular water reservoirs.

lunar water↗
NASA NTRS1972

Protective encapsulation of implantable biotelemetry units

Development of materials for encapsulating electronic devices used in biotelemetry is discussed. Chemical resistance of materials to effects of animal fluids is described. Silicone rubber is recommended as basic material with polymers applied to outer surface for protective coating.

Tombs, N. C.↗
NASA NTRS1971

Study directed at development of an implantable biotelemetry ion detector

A literature search was conducted to currently update known information in the field of ion-selective electrodes. The review attempts to identify present trends in cation and anions selective electrodes pertinent to the area of bioimplantable units. An electronic circuit was designed to provide the high impedance interface between the ion-selective sensors and signal-processing equipment. The resulting design emphasized the need for low power and miniaturization. Many of the circuits were constructed and used to evaluate the ion-selective electrodes. A cuvette capable of holding the ion-selective and the reference electrodes was designed and constructed. This equipment was used to evaluate commercially available ion-selective electrodes and the electrodes designed and constructed in the study. The results of the electrode tests are included.

Hanley, L. D.↗
NASA NTRS1973

Neutral beam dose and sputtering characteristics in an ion implantation system

A technique and instrument design for calorimetric detection of the neutral atom content of a 60 keV argon ion beam. A beam sampling method is used to measure local heat flux to a small platinum wire at steady state; integration of power density profiles leads to a determination of equivalent neutral beam current. The fast neutral production occurs as a result of charge transfer processes in the region of the beam system between analyzing magnet and beam stop where the pressure remains less than .00001 torr. A description of the neutral beam detector is given in section along with a presentation of results. An elementary analysis of sputter material transport from target to substrate was performed; the analysis relates to semiconductor sputtering.

Roberts, A. S., Jr.↗
NASA NTRS1974

Ion implanted epitaxially grown ZnSe

The epitaxial growth of ZnSe on (100) Ge using the close-spaced transport process is described. Substrate temperature of 575 C and source temperatures of 675 C yield 10 micron, single crystal layers in 10 hours. The Ge substrates provides a nonreplenishable chemical transport agent and the epitaxial layer thickness is limited to approximately 10 microns. Grown epitaxial layers show excellent photoluminescence structure at 77 K. Grown layers exhibit high resistivity, and annealing in Zn vapor at 575 C reduces the resistivity to 10-100 ohms-cm. Zinc vapor annealing quenches the visible photoluminescence.

Source record↗