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At least 271 records · Page 15

Effects of isothermal and cyclic exposures on interface structure and mechanical properties of FPalpha-Al2O3/aluminum composites

The microstructural and interface stability of FPalpha-Al203/Al-Li composites are investigated as a function of isothermal exposure at 500 C or thermal cycling between 140 and 500 C with hold time at Tmax. Interfacial morphology, growth kinetics, crystal structure, and composition of interfacial reaction products are characterized. Strength is monitored in the transverse orientation, and fracture mechanics is analyzed in terms of interface reaction products. The interfacial reaction product in FP/Al is Li2O.5Al2O3. Significant fiber-matrix reaction occurs during fabrication. The number of thermal cycles rather than total time at Tmax is the determining factor in strength degradation, thermal cycling giving rise to voids at the fiber-matrix interface. Extensive interface failures occur at composite fracture stresses below about 128 MPa; above this stress level failure is attributed to ductile matrix fracture.

Kim, W. M.↗

An analysis of interface crack in adhesively bonded lap shear joints

This paper presents an analytical study of interface crack problems in adhesively bonded lap shear joints. A convenient and accurate method of analysis is developed on the basis of conservation laws in elasticity and of the fundamental relationships in fracture mechanics of interface crack problems. The problem is eventually reduced to a system of linear algebraic equations of mixed-mode stress intensity factor solutions. One of the salient features of the present approach is that the interface crack-tip stress intensity solutions can be determined accurately and directly by the information extracted from the far field. Solutions of the interface crack problems in lap shear joints have been obtained for the cases of various adhesive/adherend material systems and geometric configurations of the crack and the joint. Of particular interest is the evaluation of the mixed-mode stress intensity factors and the associated energy release rates. They are determined explicitly to illustrate the fundamental nature of the joint fracture problem.

Wang, S. S.↗

XPS study of the chemical structure of the nickel/silicon interface

The chemical nature of the Ni/Si, Ni/Ni2Si, and Si/Ni2Si interfaces is studied using X-ray photoelectron spectroscopy. Two approaches are employed: (1) the Ni/silicide and Si/silicide interfaces are examined by dynamically monitoring the advancing reaction front during in situ growth and (2) as-deposited Ni/Si interfacial properties are analyzed by sequential evaporating monolayer Ni films on Si. These experiments show that the Ni/Ni2Si interface consists of a Ni-rich silicide phase, while the Si/Ni2Si interface has a transitional region that is correspondingly Si-rich silicide.

Grunthaner, P. J.↗

The Spacelab Experiment Interface Device (SEID)

The Spacelab experiment interface device (SEID) is described which simulates the electrical, and logical connections of the Spacelab remote acquisition unit (RAU), the interface functions of the Spacelab experiment computer software, and the electrical aspects of the high rate multiplexer. Simulated RAU interfaces include PCM serial channels (up to four), user time clock (UTC), flexible inputs (up to 128) and discrete outputs (up to 64). Connectors are logically compatible with the rau. be instructed to execute sequences of input/output commands to the RAU, similar to those performed during flight. This approximation of the experiment computer software is adequate to detect interface problems and prevent these from occurring during Spacelab payload integration. The SEID hardware is a microprocessor based system, utilizing an 8085 microprocessor with 6K of PROM and 4K of static RAM. The basic unit is augmented with an LSI-11 microcomputer to provide disk storage and a more dynamic environment for generation of control data. A simulation of the general monitoring loop is provided to emulate Spacelab system timing.

Kallus, R.↗

Optical mass memory system (AMM-13). AMM/DBMS interface control document

The baseline for external interfaces of a 10 to the 13th power bit, optical archival mass memory system (AMM-13) is established. The types of interfaces addressed include data transfer; AMM-13, Data Base Management System, NASA End-to-End Data System computer interconnect; data/control input and output interfaces; test input data source; file management; and facilities interface.

Bailey, G. A.↗

Bi-directional communication interface for microprocessor-to-system/370

The design and operation of a bi-directional communication interface between a microcomputer and the IBM System/370 is documented. The hardware unit interconnects a modem to interface to the S/370, the microcomputer with an EIA I/O port, and a terminal for sending and receiving data from either the microcomputer or the S/370. Also described is the software necessary for the two-way interface. This interface is designed so that no modifications need to be made to the terminal, modem, or microcomputer.

Fischer, J. P.↗

Bi-directional communication interface for microprocessor-to-system/370

The design and operation of a bi-directional communication interface between a microcomputer and the IBM System/370 is documented. The hardware unit inter-connects a modem to interface to the S/370, the microcomputer with an EIA I/O port, and a terminal for sending and receiving data from either the microcomputer of the S/370. The software necessary for the two-way interface is also described. This interface was designed so that no modifications need to be made to the terminal, modem or microcomputer.

Fischer, J. P.↗

Interface extinction and subsurface peaking of the radiation pattern of a line source

The radiation pattern of a line source lying along the plane interface of two dielectric half-spaces is calculated. It is found that the pattern at the interface has a null (interface extinction); that the pattern in the upper half-space, whose index of refraction is taken to be less than that of the lower half-space, has a single lobe with a maximum normal to the interface; and that the pattern in the lower half-space (subsurface region) has two maxima (peaks) straddling symmetrically a minimum. Interpretation of these results in terms of ray optics, Oseen's extinction theorem, and the Cerenkov effect are given.

Engheta, N.↗

GaAs-oxide interface states - Gigantic photoionization via Auger-like process

Spectral and transient responses of photostimulated current in MOS structures were employed for the study of GaAs-anodic oxide interface states. Discrete deep traps at 0.7 and 0.85 eV below the conduction band were found with concentrations of 5 x 10 to the 12th/sq cm and 7 x 10 to the 11th/sq cm, respectively. These traps coincide with interface states induced on clean GaAs surfaces by oxygen and/or metal adatoms (submonolayer coverage). In contrast to surfaces with low oxygen coverage, the GaAs-thick oxide interfaces exhibited a high density (about 10 to the 14th/sq cm) of shallow donors and acceptors. Photoexcitation of these donor-acceptor pairs led to a gigantic photoionization of deep interface states with rates 1000 times greater than direct transitions into the conduction band. The gigantic photoionization is explained on the basis of energy transfer from excited donor-acceptor pairs to deep states.

Lagowski, J.↗

An implicit formulation for the one-dimensional two-phase multi-interface Stefan Problem

In recent years there has been an intensified effort in the analysis of the Stefan Problem. Particular interest is directed towards determining the location of the interface between the solid and liquid phases of the substance being analyzed. A method has been developed using an implicit finite difference scheme which provides an accurate calculation of the phase change interface locations for a problem with simultaneous multiple phases. This is achieved through an iterative technique which requires the phase change energy to be correctly distributed within the nodes which are undergoing a phase transition. The new method predicts the interface locations without requiring time step size control or node size modification at the interfaces.

Williams, S. D.↗

The Strength of the Metal. Aluminum Oxide Interface

The strength of the interface between metals and aluminum oxide is an important factor in the successful operation of devices found throughout modern technology. One finds the interface in machine tools, jet engines, and microelectronic integrated circuits. The strength of the interface, however, should be strong or weak depending on the application. The diverse technological demands have led to some general ideas concerning the origin of the interfacial strength, and have stimulated fundamental research on the problem. Present status of our understanding of the source of the strength of the metal - aluminum oxide interface in terms of interatomic bonds are reviewed. Some future directions for research are suggested.

Pepper, S. V.↗

Digital interface for bi-directional communication between a computer and a peripheral device

For transmission of data from the computer to the peripheral, the computer initially clears a flipflop which provides a select signal to a multiplexer. A data available signal or data strobe signal is produced while tht data is being provided to the interface. Setting of the flipflop causes a gate to provide to the peripherial a signal indicating that the interface has data available for transmission. The peripheral provides an acknowledge or strobe signal to transfer the data to the peripheral. For transmission of data from the peripheral to the computer, the computer presents the initially cleared flipflop. A data request signal from the peripheral indicates that the peripheral has data available for transmission to the computer. An acknowledge signal indicates that the interface is ready to receive data from the peripheral and to strobe that data into the interface.

Bond, H. H., Jr.↗

Two-region analysis of interface shape in continuous casting with superheated liquid

A slab ingot is being formed as a continuous casting by withdrawal from a mold with parallel walls. The sides of the ingot below the mold are cooled to remove heat of fusion and energy transferred to the solidification interface by superheated liquid metal in the mold. A two-region analysis is made to determine the non-uniform heat conduction from the liquid metal to the interface, and then from the interface to the cooled ingot sides. The solidification interface shape is found that is compatible with the removal of fusion energy and nonuniform heating from the liquid. The solution is obtained by two applications of a Cauchy boundary value method.

Siegel, R.↗

COSMIC/NASTRAN-PATRAN Interface

A three dimensional solid modeling and finite element pre and postprocessing program, PATRAN, uses the latest interactive computer graphics technology, provides a visual means to define a finite element model and its environment, and reviews its resultant model behavior. The capabilities provided by the PATRAN-COSMIC/NASTRAN interface are discussed. While the translator capabilities give some indication of the interface quality between the two programs, there are other attributes to be considered. The ideal interface would be a user transparent union of the two programs so that the engineer could move from one program to the other fluently and naturally. Hence, a valid assessment of the interface completeness must consider how close the current capabilities are to the idealized case. An example problem is presented to demonstrate how COSMIC/NASTRAN and PATRAN can be used together to meet the requirements of an actual engineering application.

Libby, D. H.↗

EVA-glass interface bond stability

The ethylene vinyl acetate/glass interface bond stability was investigated. Special methods to determine the structure of polymer/glass interface were developed. Structural changes related to hydrothermal degradation of polymer/glass interface are examined. Methods to inhibit the degradation reaction which occur at polymer/glass interface are developed.

Koenig, J. L.↗

Convection-induced distortion of a solid-liquid interface

Measurements of convective flow fields and solid-liquid interface shapes during the solidification of a pure and a slightly alloyed transparent material reveal that the convective transport of solute can cause a macroscopic depression to develop in the solid-liquid interface. This effect occurs under conditions close to those which are predicted to produce morphological instability of a planar interface. A cellular or dendritic microstructure later develops within the interface depression. The convection is attributed to the effect of radial temperature gradients in the crystal growth apparatus.

Schaefer, R. J.↗

The liquid-vapor interface of a binary liquid mixture near the consolute point

The present investigation is concerned with measurements of the reflectance of polarized light by the liquid-vapor interface above liquid mixtures of a fluorocarbon and an alcohol in the vicinity of the consolute point of the liquid mixture. The denser fluorocarbon is preferentially adsorbed at the interface. The denser fluorocarbon is preferentially adsorbed at the interface. The data are consistent with a simple model of the dielectric constant vs height profile in the interface region. Liquid mixtures of isopropanol (i-C3H7OH) and perfluoromethylcyclohexane (C7F14) near their consolute point (Tc = 363 K) are utilized in the conducted experiments. The primary quantity measured is the ellipticity as a function of temperature and liquid composition. Attention is given to details regarding the experimental techniques, model dielectric constant profiles, and the calculation of the ellipticity.

Schmidt, J. W.↗

Adhesive joint evaluation by ultrasonic interface and lamb waves

Some results on the application of interface and Lamb waves for the study of curing of thin adhesive layers were summarized. In the case of thick substrates (thickness much more than the wave length) the interface waves can be used. In this case the experimental data can be inverted and the shear modulus of the adhesive film may be explicitly found based on the measured interface wave velocity. It is shown that interface waves can be used for the study of curing of structural adhesives as a function of different temperatures and other experimental conditions. The kinetics of curing was studied. In the case of thin substrates the wave phenomena are much more complicated. It is shown that for successful measurements proper selection of experimental conditions is very important. This can be done based on theoretical estimations. For correctly selected experimental conditions the Lamb waves may be a sensitive probe of adhesive bond quality and may be used or cure monitoring.

Rokhlin, S. I.↗