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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Axion insulator state in hundred-nanometer-thick magnetic topological insulator sandwich heterostructures

Abstract An axion insulator is a three-dimensional (3D) topological insulator (TI), in which the bulk maintains the time-reversal symmetry or inversion symmetry but the surface states are gapped by surface magnetization. The axion insulator state has been observed in molecular beam epitaxy (MBE)-grown magnetically doped TI sandwiches and exfoliated intrinsic magnetic TI MnBi 2 Te 4 flakes with an even number layer. All these samples have a thickness of ~ 10 nm, near the 2D-to-3D boundary. The coupling between the top and bottom surface states in thin samples may hinder the observation of quantized topological magnetoelectric response. Here, we employ MBE to synthesize magnetic TI sandwich heterostructures and find that the axion insulator state persists in a 3D sample with a thickness of ~ 106 nm. Our transport results show that the axion insulator state starts to emerge when the thickness of the middle undoped TI layer is greater than ~ 3 nm. The 3D hundred-nanometer-thick axion insulator provides a promising platform for the exploration of the topological magnetoelectric effect and other emergent magnetic topological states, such as the high-order TI phase.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Electron-electron interactions in low-dimensional Si:P delta layers

Scientists have long studied the physics of highly disordered conducting systems, seeking to understand the multitude of quantum phenomena that govern how electrons move through material systems. Recently, research into silicon-based quantum computing has made disordered conducting systems, such as Si:P monolayers embedded in isotopically pure Si, technically relevant. Consequently, applying and advancing the theoretical frameworks developed to describe electron behavior in disordered systems is a necessary objective in this field of research. This study investigates key components of dopant-based Si quantum computing devices: embedded regions of highly doped delta layers (δ layers). We examine the transport behavior and the electron-electron interaction (EEI) physics in embedded Si:P δ layers by means of self-consistent magnetotransport measurements. Parameters associated with the electronic transport offer a meaningful quantitative characterization of δ-layer quality and dopant diffusion. In addition, by examining EEI behaviors in a set of samples with embedded Si:P δ layers produced with different PH3 exposure procedures prior to Si encapsulation, we show how details of material synthesis affect the dimensionality of charge carrier interactions in embedded Si:P δ layers. Furthermore, the relationship between δ-layer confinement and EEI screening lengths is established here. This understanding will help validate important models used for device simulation and design and lead to improvements in the control of electrostatic gating of and tunneling transport through Si:P single atom transistors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1994

Analysis of ERS 1 synthetic aperture radar data of frozen lakes in northern Montana and implications for climate studies

Lakes that freeze each winter are good indicators of regional climate change if key parameters, such as freeze-up and breakup date and maximum ice thickness, are measured over a decade-scale time frame. Synthetic aperture radar (SAR) satellite data have proven to be especially useful for measurement of climatologically significant parameters characteristic of frozen lakes. In this paper, five lakes in Glacier National Park, Montana, have been studied both in the field and using Earth Remote-Sensing Satellite (ERS) 1 SAR data during the 1992-1993 winter. The lakes are characterized by clear ice, sometimes with tubular or rounded bubbles, and often with a layer of snow ice on top of the clear ice. They are also often snow covered. Freeze-up is detected quite easily using ERS 1 SAR data as soon as a thin layer of ice forms. The effect of snow ice on the backscatter is thought to be significant but is, as yet, undetermined. On the five lakes studied, relative backscatter was found to increase with ice thickness until a maximum was reached in February. Breakup, an often ill-defined occurrence, is difficult to detect because surface water causes the SAR signal to be absorbed, thus masking the ice below. Comparison of the bubble structure of thaw lakes in northern Alaska with lakes in northern Montana has shown that the ice structure is quite different, and this difference may contribute to differential SAR signature evolution in the lakes of the two areas.

Hall, Dorothy K.↗
DOE OSTI2020

The CLAS12 Central Time-of-Flight system

The Central Time-of-Flight system for the large-acceptance CLAS12 spectrometer in Hall B at the Thomas Jefferson National Accelerator Facility is described. The system consists of a hermetic barrel of 48 scintillation counters at a radius of 25 cm from the beamline. The wedge-shaped counters are 3.4 cm wide, 3.0 cm thick, and 90 cm long, and span a range of polar angles relative to the center of the nominal target location from roughly 35° to 125°. The counters reside in the 5-T field of the CLAS12 superconducting solenoid. The bars are read out via bent light guides 1 m long on the upstream end of the counters and 1.6 m long on the downstream end. The phototubes are shielded by a multi-layer dynamical magnetic shield system to reduce the local fringe fields in the range from 400 G to 1000 G down to the level of 0.2 G at the location of the photocathodes. The average effective time resolution of the counters is 80 ps.

47 OTHER INSTRUMENTATION↗
NASA NTRS1985

Taylor-Goertler instabilities of Tollmien-Schlichting waves and other flows governed by the interactive boundary layer equations

The Taylor-Gortler vortex instability equations are formulated for steady and unsteady interacting boundary layer flows of the type which arise in triple-deck theory. The effective Gortler number is shown to be a function of the all shape in the boundary layer and the possibility of both steady and unsteady Taylor-Gortler modes exists. As an example the steady flow in a symmetrically constricted channel is considered and it is shown that unstable Gortler vortices exist before the boundary layers at the wall develop the Goldstein singularity. As an example of an unsteady spatially varying basic state the instability of high frequency large amplitude Tollmien-Schlichting waves in a curved channel were considered. It is shown that they are unstable in the first Stokes layer stage of the hierarchy of nonlinear states. The Tollmien-Schlichting waves are shown to be unstable in the presence of both convex and concave curvature.

Hall, P.↗
NASA NTRS2007

Development of a High Efficiency UVR/IRR Coverglass for Triple Junction Solar Cells

Cover glasses have been a necessary and integral part of space solar arrays since their inception. The main function of the cover glass is to protect the underlying solar cell from the harsh radiation environment of space. They are formed either from fused silica or specially formulated ceria doped glass types that are resistant to radiation damage, for example Pilkington's CMX, CMG, CMO. Solar cells have steadily increased in performance over the past years, from Silicon cells through textured Silicon cells to GaAs cells and the multijunction cells of today. The optimum coverglass solution for each of these cells has been different. The glass itself has also evolved. In some cases it has had its expansion coefficient matched to the cell substrate material, and in addition, added value has been derived from the application of thin film optical coatings to the coverglass. In the majority of cases this has taken the form of a single layer of MgF2 which acts as an antireflection coating. There are also conductive coatings to address electrostatic discharge issues (ESD) and Ultra Violet Reflective (UVR) and Infrared Reflective (IRR) coatings designed for thermal enhancement. Each type of coating can be applied singly or in combination. This paper describes a new type of UVR/IRR (or blue red reflector BRR) specifically designed for triple junction solar cells. For space applications, where radiation is the principal mechanism for removing heat from the satellite, it is the emittance and solar absorptance that primarily determine the temperature of the array. It is therefore essential that any coatings designed to have an effect on the temperature by reducing the solar absorption have a minimal effect on the overall emittance.

Russell, John↗
DOE OSTI2022

Growth of ultrathin Bi 2 Se 3 films by molecular beam epitaxy

Bi 2 Se 3 is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decreases to less than approximately 6 nm, the top and bottom surface states couple, resulting in the opening of a small gap at the Dirac point. In the 2D limit, Bi 2 Se 3 may exhibit quantum spin Hall states. However, growing coalesced ultrathin Bi 2 Se 3 films with a controllable thickness and typical triangular domain morphology in the few nanometer range is challenging. Here, we explore the growth of Bi 2 Se 3 films having thicknesses down to 4 nm on sapphire substrates using molecular beam epitaxy that were then characterized with Hall measurements, atomic force microscopy, and Raman imaging. We find that substrate pretreatment—growing and decomposing a few layers of Bi 2 Se 3 before the actual deposition—is critical to obtaining a completely coalesced film. In addition, higher growth rates and lower substrate temperatures led to improvement in surface roughness, in contrast to what is observed for conventional epitaxy. Altogether, coalesced ultrathin Bi 2 Se 3 films with lower surface roughness enable thickness-dependent studies across the transition from a 3D-topological insulator to one with gapped surface states in the 2D regime.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Optoelectronic property comparison for isostructural Cu 2 BaGeSe 4 and Cu 2 BaSnS 4 solar absorbers

To target mitigation of anti-site defect formation in Cu 2 ZnSnS 4–x Se x , a new class of chalcogenides, for which Ba or Sr (group 2) replace Zn (group 12), has recently been introduced for prospective solar absorber application. Cu 2 BaGeSe 4 (CBGSe) and Cu 2 BaSnS 4 (CBTS) are two such compounds, which share a common trigonal crystal structure (P3 1 space group) and similar quasi-direct band gap (~2 eV). While CBTS-based films have already been studied, there are no reports yet on films and solar cells based on related CBGSe. To identify key differences and similarities in the electronic properties between these two materials, electronic characteristics (e.g., carrier concentration, mobility, electron affinity, defect levels, recombination, and charge carrier kinetics) of vacuum-deposited CBGSe and CBTS films are compared using a variety of characterization methods. Hall effect measurements reveal that CBGSe films have relatively higher hole carrier concentration and lower mobility (3 × 10 15 cm –3 , 0.6 cm 2 V –1 s –1 ) compared to CBTS (5 × 10 12 cm –3 , 3.5 cm 2 V –1 s –1 ). Photoelectron spectroscopy yields low electron affinity values for both CBGSe (3.7 eV) and CBTS (3.3 eV), pointing to the necessity of pursuing low electron affinity buffer materials for both types of absorbers. At low temperatures, CBGSe films show free-exciton photoluminescence, as well as pronounced deep-level emission at ~1.4 eV, while CBTS films exhibit a strong bound-exciton signal with noticeably less intense deep-level emission than for CBGSe. Charge carrier kinetics, transport, and recombination properties of both types of films are also analyzed using optical-pump terahertz-probe spectroscopy and time-resolved microwave conductivity. The first CBGSe prototype solar cells (using chemical bath deposited CdS as a buffer layer) show a maximum of 1.5% efficiency with ~0.62 V open-circuit voltage. Furthermore, the measured properties point to possible limiting factors for CBGSe and related films for PV and optoelectronics and provide insights on possible approaches for improvement within this multinary chalcogenide family.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1990

On the Goertler vortex instability mechanism at hypersonic speeds

The linear instability of the hypersonic boundary layer on a curved wall is considered. As a starting point real-gas effects are ignored and the viscosity of the fluid is taken to be related to the temperature either by Chapman's Law or by Sutherland's Law. It is shown that the flow is susceptible to Goertler vortices. If Chapman's Law is used the vortices are trapped in the logarithmically thin adjustment layer in which the temperature of the basic flow changes rapidly to its free stream value and the nonuniqueness of the neutral stability curve associated with incompressible Goertler vortices is shown to disappear at high Mach numbers if the appropriate 'fast' streamwise dependence of the instability is built into the disturbance flow structure. If, on the other hand, Sutherland's Law is used, the vortices are found to spread into an O(1) region and the concept of a unique neutral stability curve is not tenable because of the nonparallel effects. For both laws the leading order terms in the expansions of the Goertler number are independent of the wave number and are due to the curvature of the basic state.

Hall, P.↗
DOE OSTI2022

A Van der Waals Interface Hosting Two Groups of Magnetic Skyrmions

Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion-based ultrahigh-density spin memory devices. Extending the field to 2D van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g., thickness, twist angle, and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. In this work, a van der Waals interface, formed by two 2D ferromagnets Cr 2 Ge 2 Te 6 and Fe 3 GeTe 2 with a Curie temperature of ≈65 and ≈205 K, respectively, hosting two groups of magnetic skyrmions, is reported. Two sets of topological Hall effect signals are observed below 6s0 K when Cr 2 Ge 2 Te 6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy, and supported by micromagnetic simulations. Interestingly, the magnetic skyrmions persist in the heterostructure with zero applied magnetic field. The results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases.

2D magnetism↗
NASA NTRS1997

Improved Passive Microwave Algorithms for North America and Eurasia

Microwave algorithms simplify complex physical processes in order to estimate geophysical parameters such as snow cover and snow depth. The microwave radiances received at the satellite sensor and expressed as brightness temperatures are a composite of contributions from the Earth's surface, the Earth's atmosphere and from space. Owing to the coarse resolution inherent to passive microwave sensors, each pixel value represents a mixture of contributions from different surface types including deep snow, shallow snow, forests and open areas. Algorithms are generated in order to resolve these mixtures. The accuracy of the retrieved information is affected by uncertainties in the assumptions used in the radiative transfer equation (Steffen et al., 1992). One such uncertainty in the Chang et al., (1987) snow algorithm is that the snow grain radius is 0.3 mm for all layers of the snowpack and for all physiographic regions. However, this is not usually the case. The influence of larger grain sizes appears to be of more importance for deeper snowpacks in the interior of Eurasia. Based on this consideration and the effects of forests, a revised SMMR snow algorithm produces more realistic snow mass values. The purpose of this study is to present results of the revised algorithm (referred to for the remainder of this paper as the GSFC 94 snow algorithm) which incorporates differences in both fractional forest cover and snow grain size. Results from the GSFC 94 algorithm will be compared to the original Chang et al. (1987) algorithm and to climatological snow depth data as well.

Foster, James↗
DOE OSTI2022

Computational discovery of two-dimensional rare-earth iodides: promising ferrovalley materials for valleytronics

Two-dimensional Ferrovalley materials with intrinsic valley polarization are rare but highly promising for valley-based nonvolatile random access memory and valley filter devices. These ferromagnetic materials exhibit valleys at or near the Fermi level with intrinsic magnetism. The strong coupling between magnetism and spin–orbit coupling induces intrinsic valley polarization. Using Kinetically Limited Minimization, an unconstrained crystal structure prediction algorithm, and prototype sampling based on first-principles calculations, we have discovered new Ferrovalley materials, rare-earth iodides RI 2 , where R is a rare-earth element belonging to Sc, Y, or La-Lu, and I is Iodine. The rare-earth iodides are layered and demonstrate either 2H, 1T, or 1T d phase as the ground state in bulk, analogous to transition metal dichalcogenides (TMDCs). The calculated exfoliation energy of monolayers (MLs) is comparable to that of graphene and TMDCs, suggesting possible experimental synthesis. The MLs in the 2H phase exhibit ferromagnetism due to unpaired electrons in d and f orbitals. Throughout the rare-earth series, d bands have valley polarization at K and $\overline{K}$ points in the Brillouin zone in the vicinity of the Fermi level. Large intrinsic valley polarization in the range of 15–143 meV without external stimuli is observed in these Ferrovalley materials, which can be enhanced further by applying an in-plane bi-axial strain. These valleys can selectively be probed and manipulated for information storage and processing, potentially offering superior performance beyond conventional electronics and spintronics. Here we further show that the 2H ferromagnetic phase of RI 2 MLs possesses non-zero Berry curvature and exhibits anomalous valley Hall effect with considerable anomalous Hall conductivity. Our work will incite exploratory synthesis of the predicted Ferrovalley materials and their application in valleytronics and beyond.

2D materials↗
NASA NTRS2023

Auroral, Ionospheric and Ground Magnetic Signatures of Magnetopause Surface Modes

Surface waves on Earth's magnetopause have a controlling effect upon global magnetospheric dynamics. Since spacecraft provide sparse in situ observation points, remote sensing these modes using ground-based instruments in the polar regions is desirable. However, many open conceptual questions on the expected signatures remain. Therefore, we provide predictions of key qualitative features expected in auroral, ionospheric, and ground magnetic observations through both magnetohydrodynamic theory and a global coupled magnetosphere-ionosphere simulation of a magnetopause surface eigenmode. These show monochromatic oscillatory field-aligned currents (FACs), due to both the surface mode and its non-resonant Alfvén coupling, are present throughout the magnetosphere. The currents peak in amplitude at the equatorward edge of the magnetopause boundary layer, not the open-closed boundary as previously thought. They also exhibit slow poleward phase motion rather than being purely evanescent. We suggest the upward FAC perturbations may result in periodic auroral brightenings. In the ionosphere, convection vortices circulate the poleward moving FAC structures. Finally, surface mode signals are predicted in the ground magnetic field, with ionospheric Hall currents rotating perturbations by approximately (but not exactly) 90° compared to the magnetosphere. Thus typical dayside magnetopause surface modes should be strongest in the East-West ground magnetic field component. Overall, all ground-based signatures of the magnetopause surface mode are predicted to have the same frequency across L-shells, amplitudes that maximize near the magnetopause's equatorward edge, and larger latitudinal scales than for field line resonance. Implications in terms of ionospheric Joule heating and geomagnetically induced currents are discussed.

M. O. Archer↗
DOE OSTI2019

Microscopic subsurface characterization of layered magnetic materials using magnetic resonance force microscopy

This project resulted in the following accomplishments: 1) The invention of scanned probe ferromagnetic resonance microscopy. Upon implementation and refinement this approach was used to measure static and dynamic magnetic resonance properties of ferromagnets with an unprecedented combination of spectral and spatial resolution. 2) Demonstration and study of spin pumping in a pristine ferromagnet across a boundary defined entirely by a magnetic field gradient, and so free of materials discontinuities. 3) First demonstrated highly efficient dynamic spin injection from Y 3 Fe 5 O 12 (YIG) into NiO, an antiferromagnetic (AF) insulator and robust spin propagation in AF NiO over distances up to 100-nm thickness; both spin injection and spin transport are mediated by the AF spin correlations. 4) Demonstration of exceptionally high efficiency conversion of spin current to charge current achieved in spin pumping from the dynamic magnetization of a ferromagnetic insulator into a variety of adjacent metal films. 5) Seminal study of the nature of spin-orbit coupling in d-electron metals that revealed the dominant sensitivity of the d-orbital moment to the d-electron count and revealing the important roles of both d-electron configuration and atomic number in the physics of the spin Hall effect. 6) Demonstration of observation of FMR by means of optically-detected NV diamond relaxometry that provided a highly sensitive, spatially resolved FMR detection method and revealed spin pumping across 100-nm length scales by means of dipolar coupling. 7) Using magnetic field localization, developed for FMR imaging, demonstrated a novel approach to discretizing spin wave modes to improve the characteristics of auto-oscillators driven by pure spin currents produced by the spin Hall effect. 8) We demonstrated large spin pumping signals from propagating high wavevector spinwaves in thin film YIG find that the spin pumping efficiency was insensitive to wavevector thus emphasizing the promise of thin YIG films for spinwave-based spintronics by allowing for predictable down-scaling of device dimensions and enabling a broad range of operational frequencies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRSDate not supplied

Hardware-Efficient Quantum Optimization Layered Algorithms and Experiments

Quantum optimization algorithms, such as QAOA, that implement parametrized stochastic optimization solvers attempt to identify low-energy solutions of Ising systems by exploiting available quantum effects in noisy-intermediate scale machines. Engineering a well-performing parametrized quantum optimization circuit is indeed an exercise in balancing the trade-off between expressivity and implementation complexity. We show that, for MaxCut QAOA circuits defined on native hardware topology (Rigetti’s Aspen Quantum Processors), error-mitigation techniques recover simulated features of the noiseless theory. Moreover, we explore a design space for QAOA-like ansatze that perform well in theory as well as in hardware for fully-connected problems. We also discuss how efficient coherence and entanglement detection methods that could be coupled with quantum optimization experiments require only linear overhead in benchmarking time.

quantum computing↗
DOE OSTI2022

The role of temperature on defect diffusion and nanoscale patterning in graphene

Graphene is of great scientific interest due to a variety of unique properties such as ballistic transport, spin selectivity, the quantum hall effect, and other quantum properties. Nanopatterning and atomic scale modifications of graphene are expected to enable further control over its intrinsic properties, providing ways to tune the electronic properties through geometric and strain effects, introduce edge states and other local or extended topological defects, and sculpt circuit paths. The focused beam of a scanning transmission electron microscope (STEM) can be used to remove atoms, enabling milling, doping, and deposition. Utilization of a STEM as an atomic scale fabrication platform is increasing; however, a detailed understanding of beam-induced processes and the subsequent cascade of aftereffects is lacking. Here, we examine the electron beam effects on atomically clean graphene at a variety of temperatures ranging from 400 to 1000 °C. We find that temperature plays a significant role in the milling rate and moderates competing processes of carbon adatom coalescence, graphene healing, and the diffusion (and recombination) of defects. The results of this work can be applied to a wider range of 2D materials and introduce better understanding of defect evolution in graphite and other bulk layered materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Unintentional impurity incorporation in GaN drift layers represents a challenging issue that can limit their potential performance in vertical power devices. In this paper, we focus on studying the origins of Fe impurity incorporation in metal-organic chemical vapor deposition (MOCVD) grown GaN materials. Acting as a compensator in n-type GaN drift layers, Fe impurities can reduce the electron mobility in GaN and limit the lowest controllable doping level. Two sources, the sample cleaning process and growth susceptor, were identified as the main mechanisms of Fe incorporation in the MOCVD GaN growth process. It was found that solvent cleaning of the wafer can introduce significant Fe contamination at the growth interface, which would slowly be incorporated into the GaN epilayer, thus causing background Fe impurity as high as 10 17 cm -3 level. Moreover, the Fe impurity in the coating material on the susceptor can introduce additional Fe impurity during the growth process. Our studies revealed that the Fe impurity level could be significantly suppressed by more than two orders when an alternative cleaning process was used and the susceptor surface was fully covered by substrates. Characterization of the Fe impurity concentrations was performed via secondary ion mass spectrometry. The trap level (E C - 0.57) eV from deep-level transient spectroscopy that had previously been attributed to Fe confirmed the carrier compensation effect from Fe. Room temperature Hall mobility as high as 1007 cm 2 /V s was achieved on the MOCVD grown low-Fe GaN. Results from this work will provide guidance for achieving high purity GaN toward high performance GaN vertical power devices.

42 ENGINEERING↗