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Limit switch for reliable, low-travel, snap action with negligible arcing uses an electrically nonconductive permanent magnet consisting of a ferrimagnetic ceramic and ferromagnetic pole shoes which form a magnetic and electrically conductive circuit with a ferrous-metal armature.
We investigate giant magnetoelectric coupling at a Mn 3+ spin crossover in [Mn III L]BPh 4 (L = (3,5-diBr-sal) 2 323) with a field-induced permanent switching of the structural, electric, and magnetic properties. An applied magnetic field induces a first-order phase transition from a high spin/low spin (HS-LS) ordered phase to a HS-only phase at 87.5 K that remains after the field is removed. We observe this unusual effect for DC magnetic fields as low as 8.7 T. The spin-state switching driven by the magnetic field in the bistable molecular material is accompanied by a change in electric polarization amplitude and direction due to a symmetry-breaking phase transition between polar space groups. The magnetoelectric coupling occurs due to a γη 2 coupling between the order parameter γ related to the spin-state bistability and the symmetry-breaking order parameter η responsible for the change of symmetry between polar structural phases. We also observe conductivity occurring during the spin crossover and evaluate the possibility that it results from conducting phase boundaries. We perform ab initio calculations to understand the origin of the electric polarization change as well as the conductivity during the spin crossover. Thus, in this work, we demonstrate a giant magnetoelectric effect with a field-induced electric polarization change that is 1/10 of the record for any material.
By understanding the fundamental dynamics of topological vortex and antivortex naturally formed in microscale/nanoscale ferromagnetic building blocks under external perturbations is crucial to magnetic vortex–based information processing and spintronic devices. All previous studies have focused on magnetic vortex–core switching via external magnetic fields, spin-polarized currents, or spin waves, which have largely prohibited the investigation of novel spin configurations that could emerge from the ground states in ferromagnetic disks and their underlying dynamics. We report in situ visualization of femtosecond laser quenching–induced magnetic vortex changes in various symmetric ferromagnetic Permalloy disks by using Lorentz phase imaging of four-dimensional electron microscopy that enables in situ laser excitation. Besides the switching of magnetic vortex chirality and polarity, we observed with distinct occurrence frequencies a plenitude of complex magnetic structures that have never been observed by magnetic field– or current-assisted switching. These complex magnetic structures consist of a number of newly created topological magnetic defects (vortex and antivortex) strictly conserving the topological winding number, demonstrating the direct impact of topological invariants on magnetization dynamics in ferromagnetic disks. Their spin configurations show mirror or rotation symmetry due to the geometrical confinement of the disks. Combined micromagnetic simulations with the experimental observations reveal the underlying magnetization dynamics and formation mechanism of the optical quenching–induced complex magnetic structures. Their distinct occurrence rates are pertinent to their formation-growth energetics and pinning effects at the disk edge. On the basis of these findings, we propose a paradigm of optical quenching–assisted fast switching of vortex cores for the control of magnetic vortex–based information recording and spintronic devices.
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Abstract We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local maximum or local minimum at zero magnetic field. Switching of microstrip magnetizations then results in positive or negative hysteretic dependence as conductance maxima or minima shift with respect to the global external field. Stray fields are found to be in the range of tens of millitesla, comparable to the scale over which the nanowire magnetoresistance develops. We observe that the stray field signal is similar to that obtained in devices with ferromagnetic contacts (spin valves). We perform micromagnetic simulations which are in reasonable agreement with the experiment. The use of locally varying magnetic fields may bring new ideas for Majorana circuits in which nanowire networks require control over field orientation at the nanoscale.
Evaluation results and accuracy improvement of two flux switching mathematical models for magnetic cores
The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present an approach of utilizing resistive switching to control magnetic anisotropy. We study a ferromagnetic oxide that exhibits an electrically triggered metal-to-insulator phase transition producing a volatile resistive switching. The switching occurs in a characteristic spatial pattern, the formation of an insulating barrier perpendicular to the current flow, which results in an unusual ferromagnetic/paramagnetic/ferromagnetic configuration. Further, the formation of this voltage-driven paramagnetic insulating barrier is accompanied by the emergence of a strong uniaxial magnetic anisotropy that overpowers the intrinsic material anisotropy. Our results demonstrate that resistive switching is an effective tool for manipulating magnetic properties. Because resistive switching can be induced in a broad range of materials, our findings could enable a new class of voltage-controlled magnetism systems.
Increasing switching frequency reduces magnetic volume, but conventional ferrites, used from tens to hundreds of kilohertz, cannot sustain the temperature and frequency ranges demanded by current and emerging wide bandgap and ultrawide bandgap devices. Here, this work presents a novel magnetic material architecture combining nanocrystalline magnetic material and multiferroic layers for megahertz power conversion. The high saturation flux density of nanocrystalline alloys supports miniaturization but is traditionally constrained by excessive losses above 10 kHz. A revolutionary multiferroic material with solid-state cooling via caloric materials is defined that will enable the next generation of magnetic devices for wide-bandgap-integrated designs. This letter highlights the fundamental physics behind this capability alongside early development of a finite element analysis for the multiferroic-based magnetic device using ANSYS, showing that the core achieves more uniform thermal distribution and reduces peak temperature by 9 ° C compared to conventional ferrites.
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Magnetic interactions give rise to a surprising amount of complexity due to the fact that both static and dynamic magnetic properties are governed by competing short-range exchange interactions and long-range dipolar coupling. Even though the underlying dynamical equations are well established, the connection of magnetization dynamics to other degrees of freedom, such as optical excitations, charge and heat flow, or mechanical motion, make magnetism a mesoscale research problem that is still wide open for exploration. Synthesizing magnetic materials and heterostructures with tailored properties will allow to take advantage of magnetic interactions spanning many length-scales, which can be probed with advanced spectroscopy and microscopy and modeled with multi-scale simulations. Finally, this paper highlights some of the current basic research topics in mesoscale magnetism, which beyond their fundamental science impact are also expected to influence applications ranging from information technologies to magnetism based energy conversion.
Eddy current free switching of permalloy thin magnetic film, and large-angle flux reversal measurements
The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number C = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.
Spin orbit torque (SOT) has attracted much attention as an energy efficient electrical method to switch the magnetization in single magnetic layer with both in-plane and perpendicular anisotropy. Here, we report SOT switching of synthetic antiferromagnetic and ferrimagnetic Co/Ir/Co trilayers, where the net magnetization and the interlayer coupling strength are highly controllable. Here, a weak external field dependence of the SOT switching was observed due to the robust domain wall structure in the trilayer. The switching current density was observed to scale inversely with the net magnetization. For trilayers with the same net magnetization, switching current is independent of the layer order because switching in the thicker Co layer dominates. In both ferromagnetic and antiferromagetic regimes, the switching current reflects the interlayer coupling strength.
We investigate the switching current density reduction of perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions using micromagnetic simulations. We find that the switching current density can be reduced with elongated lateral shapes of the magnetic tunnel junctions, and additional reduction can be achieved by using a noncollinear polarizer layer. The reduction is closely related to the details of spin configurations during switching processes with the additional in-plane anisotropy.
It was found that by using the same α-Fe{sub 2}O{sub 3} target in fabrication process, an oxygen-deficient and an oxygen-sufficient atmosphere facilitated the formation of Fe{sub 3}O{sub 4} and α-Fe{sub 2}O{sub 3}, respectively. The Au/α-Fe{sub 2}O{sub 3}/Pt heterostructure showed a memristive bipolar resistance switching. A clear difference was observed in the transport and magnetic properties between the two resistance states. The enhanced conductivity and magnetization in the Au/α-Fe{sub 2}O{sub 3}/Pt heterostructure are believed to result from an enhanced electron hopping between Fe{sup 3+}-Fe{sup 2+} pairs and Fe{sup 3+}-O-Fe{sup 2+} double exchange coupling effect. The enhanced Fe{sup 2+} comes from a redox transition between two phases (one behaves like Fe{sub 3}O{sub 4} and the other like α-Fe{sub 2}O{sub 3}), due to the electrochemical migration of oxygen vacancies.