Designing an Epitaxially-Integrated DBR for Dislocation Mitigation in Monolithic GaAsP/Si Tandem Solar Cells
This work explores epitaxially-integrated distributed Bragg reflectors (DBR) as a strategy to mitigate the impact of threading dislocations on the performance of monolithic GaAs 0.75 P 0.25 /Si tandem solar cells. The constraints present due to materials availability and the optical transmission profile of the GaAs 0.75 P 0.25 top cell require the use of an enhanced bandwidth DBR design achieved by combining two narrow-band DBR’s with different central wavelengths. Here, the impact of this DBR structure on JSC, along with the competing effects of threading dislocation density (TDD), are investigated using a robust, experimentally informed analytical model. Implementing this DBR within the GaAs 0.75 P 0.25 /Si tandem cell structure is predicted to yield a short circuit current enhancement equivalent to an ~1.8× reduction in TDD, providing a clear demonstration of its promise as a design methodology for mitigating the impact of non-negligible defect populations.