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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Designing an Epitaxially-Integrated DBR for Dislocation Mitigation in Monolithic GaAsP/Si Tandem Solar Cells

This work explores epitaxially-integrated distributed Bragg reflectors (DBR) as a strategy to mitigate the impact of threading dislocations on the performance of monolithic GaAs 0.75 P 0.25 /Si tandem solar cells. The constraints present due to materials availability and the optical transmission profile of the GaAs 0.75 P 0.25 top cell require the use of an enhanced bandwidth DBR design achieved by combining two narrow-band DBR’s with different central wavelengths. Here, the impact of this DBR structure on JSC, along with the competing effects of threading dislocation density (TDD), are investigated using a robust, experimentally informed analytical model. Implementing this DBR within the GaAs 0.75 P 0.25 /Si tandem cell structure is predicted to yield a short circuit current enhancement equivalent to an ~1.8× reduction in TDD, providing a clear demonstration of its promise as a design methodology for mitigating the impact of non-negligible defect populations.

14 SOLAR ENERGY↗
NASA NTRS2001

HAMSR - The High Altitude MMIC Sounding Radiometer

WAMSR is a millimeter wave atmospheric temperature and humidity sounder that utilizes state of the art technology to enable substantial reductions in size and mass while at the same time achieve improved measurement sensitivity and accuracy. It is the first such instrument to use receivers based entirely on newly developed monolithic microwave integrated circuit technology. Sponsored by the NASA Instrument Incubator Program, HAMSR has been under development for the past 2 112 years. The first science mission takes place in Florida this summer, where HAMSR is deployed on the NASA ER-2 during the CAMEX-4 hurricane field campaign and will provide core atmospheric soundings to a number of investigators. HAMSR represents the next generation of microwave sounders.

remote sensing↗
NASA NTRS2013

A 75-116-Ghz LNA with 23-K Noise Temperature at 108 Ghz

In this paper we present the design and measurement results, both on-wafer and in package, of an ultra-low-noise and wideband monolithic microwave integrated circuit (MMIC) amplifier in the frequency range of 75 to 116 GHz. The three-stage amplifier packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology achieves a record noise temperature of 23 K at 108 GHz when cryogenically cooled to 27 K. The measured gain is 22 to 27 dB for frequency range of 75 to 116 GHz. Furthermore, the amplifier utilizes four finger devices with total gate width of 60 um resulting for improved linearity.

monolithic microwave integrated circuit (MMIC)↗
NASA NTRS2011

High Frequency PIN-Diode Switches for Radiometer Applications

Internally calibrated radiometers are needed for ocean topography and other missions. Typically internal calibration is achieved with Dicke switching as one of the techniques. We have developed high frequency single-pole double-throw (SPDT) switches in the form of monolithic microwave integrated circuits (MMIC) that can be easily integrated into Dicke switched radiometers that utilize microstrip technology. In particular, the switches we developed can be used for a radiometer such as the one proposed for the Surface Water and Ocean Topography (SWOT) Satellite Mission whose three channels at 92, 130, and 166 GHz would allow for wet-tropospheric path delay correction near coastal zones and over land. This feat is not possible with the current Jason-class radiometers due to their lower frequency signal measurement and thus lower resolution. The MMIC chips were fabricated at NGST using their InP PIN diode process and measured at JPL using high frequency test equipment. Measurement and simulation results will be presented.

PIN-diode↗
NASA NTRS1987

Heat-Exchanger/Heat-Pipe Interface

Monolithic assembly reliable and light in weight. Heat exchanger and evaporator ends of heat pipes integrated in monolithic halves welded together. Interface assembly connects heat exchanger of furnace, reactor, or other power source with heat pipes carrying heat to radiator or power-consuming system. One of several concepts proposed for nuclear power supplies aboard spacecraft, interface useful on Earth in solar thermal power systems, heat engines, and lightweight cooling systems.

Snyder, H. J.↗
NASA NTRS2014

Technology Development for 3-D Wide Swath Imaging Supporting ACE

The National Academy of Sciences Decadal Survey (DS) Aerosol-Cloud-Ecosystems Mission (ACE) aims to advance our ability to observe and predict changes to the Earth's hydrological cycle and energy balance in response to climate forcing, especially those changes associated with the effects of aerosol on clouds and precipitation. ACE is focused on obtaining measurements to reduce the uncertainties in current climate models arising from the lack in understanding of aerosol-cloud interactions. As part of the mission instrument suite, a dual-frequency radar comprised of a fixed-beam 94 gigahertz (W-band) radar and a wide-swath 35 gigahertz (Ka-band) imaging radar has been recommended by the ACE Science Working Group.In our 2010 Instrument Incubator Program project, we've developed a radar architecture that addresses the challenge associated with achieving the measurement objectives through an innovative, shared aperture antenna that allows dual-frequency radar operation while achieving wide-swath (100 kilometers) imaging at Ka-band. The antenna system incorporates 2 key technologies; a) a novel dual-band reflectorreflectarray and b) a Ka-band Active Electronically Scanned Array (AESA) feed module. The dual-band antenna is comprised of a primary cylindrical reflectorreflectarray surface illuminated by a point-focus W-band feed (compatible with a quasi-optical beam waveguide feed, such as that employed on CloudSat); the Ka-band AESA line feed provides wide-swath across-track scanning. The benefits of this shared-aperture approach include significant reductions in ACE satellite payload size, weight, and cost, as compared to a two aperture approach. Four objectives were addressed in our project. The first entailed developing the tools for the analysis and design of reflectarray antennas, assessment of candidate reflectarray elements, and validation using test coupons. The second objective was to develop a full-scale aperture design utilizing the reflectarray surface and to detail specific requirements and trades for the Ka-band AESA line feed. As part of the third objective a subscale antenna, similar to the full-scale aperture design, was developed, integrated, and flown with the Cloud Radar System during the 2014 Integrated Precipitation and Hydrology Experiment. The fourth and ongoing objective entails developing a GaN MMIC (Gallium Nitride Monolithic Microwave Integrated Circuits) power amplifier for use in the Ka-band AESA. An overview of the progress made on this project and a look ahead at the 2013 IIP (Instrument Incubator Program) award selection will be presented.

Antenna↗
NASA NTRS2009

MMICs with Radial Probe Transitions to Waveguides

A document presents an update on the innovation reported in Integrated Radial Probe Transition From MMIC to Waveguide (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. To recapitulate: To enable operation or testing of a monolithic microwave integrated circuit (MMIC), it is necessary to mount the MMIC in a waveguide package that typically has cross-sectional waveguide dimensions of the order of a few hundred microns. A radial probe transition between an MMIC operating at 340 GHz and a waveguide had been designed (but not yet built and tested) to be fabricated as part of a monolithic unit that would include the MMIC. The radial probe could readily be integrated with an MMIC amplifier because the design provided for fabrication of the transition on a substrate of the same material (InP) and thickness (50 m) typical of substrates of MMICs that can operate above 300 GHz. As illustrated in the updated document by drawings, photographs, and plots of test data, the concept has now been realized by designing, fabricating, and testing several MMIC/radial- probe integrated-circuit chips and designing and fabricating a waveguide package to contain each chip.

Samoska, Lorene↗
NASA NTRS1992

High-performance packaging for monolithic microwave and millimeter-wave integrated circuits

Packaging schemes were developed that provide low-loss, hermetic enclosure for advanced monolithic microwave and millimeter-wave integrated circuits (MMICs). The package designs are based on a fused quartz substrate material that offers improved radio frequency (RF) performance through 44 gigahertz (GHz). The small size and weight of the packages make them appropriate for a variety of applications, including phased array antenna systems. Packages were designed in two forms; one for housing a single MMIC chip, the second in the form of a multi-chip phased array module. The single chip array module was developed in three separate sizes, for chips of different geometry and frequency requirements. The phased array module was developed to address packaging directly for antenna applications, and includes transmission line and interconnect structures to support multi-element operation. All packages are fabricated using fused quartz substrate materials. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices. The package and test fixture designs were both developed in a generic sense, optimizing performance for a wide range of possible applications and devices.

Shalkhauser, K. A.↗
NASA NTRS1992

High-performance packaging for monolithic microwave and millimeter-wave integrated circuits

Packaging schemes are developed that provide low-loss, hermetic enclosure for enhanced monolithic microwave and millimeter-wave integrated circuits. These package schemes are based on a fused quartz substrate material offering improved RF performance through 44 GHz. The small size and weight of the packages make them useful for a number of applications, including phased array antenna systems. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices.

Shalkhauser, K. A.↗
NASA NTRS1995

Integrated Cryogenic Satellite Communications Cross-Link Receiver Experiment

An experiment has been devised which will validate, in space, a miniature, high-performance receiver. The receiver blends three complementary technologies; high temperature superconductivity (HTS), pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuits (MMIC), and a miniature pulse tube cryogenic cooler. Specifically, an HTS band pass filter, InP MMIC low noise amplifier, HTS-sapphire resonator stabilized local oscillator (LO), and a miniature pulse tube cooler will be integrated into a complete 20 GHz receiver downconverter. This cooled downconverter will be interfaced with customized signal processing electronics and integrated onto the space shuttle's 'HitchHiker' carrier. A pseudorandom data sequence will be transmitted to the receiver, which is in low Earth orbit (LEO), via the Advanced Communication Technology Satellite (ACTS) on a 20 GHz carrier. The modulation format is QPSK and the data rate is 2.048 Mbps. The bit error rate (BER) will be measured in situ. The receiver is also equipped with a radiometer mode so that experiment success is not totally contingent upon the BER measurement. In this mode, the receiver uses the Earth and deep space as a hot and cold calibration source, respectively. The experiment closely simulates an actual cross-link scenario. Since the receiver performance depends on channel conditions, its true characteristics would be masked in a terrestrial measurement by atmospheric absorption and background radiation. Furthermore, the receiver's performance depends on its physical temperature, which is a sensitive function of platform environment, thermal design, and cryocooler performance. This empirical data is important for building confidence in the technology.

Romanofsky, R. R.↗
NASA NTRS1988

GaAs MMIC elements in phased-array antennas

Over the last six years NASA Lewis Research Center has carried out a program aimed at the development of advanced monolithic microwave integrated circuit technology, principally for use in phased-array antenna applications. Arising out of the Advanced Communications Technology Satellite (ACTS) program, the initial targets of the program were chips which operated at 30 and 20 GHz. Included in this group of activities were monolithic power modules with an output of 2 watts at GHz, variable phase shifters at both 20 and 30 GHz, low noise technology at 30 GHz, and a fully integrated (phase shifter, variable gain amplifier, power amplifier) transmit module at 20 GHz. Subsequent developments are centered on NASA mission requirements, particularly Space Station communications systems and deep space data communications.

Leonard, Regis F.↗
NASA NTRS1994

Optoelectronic Receiver For Communication And Control

Many operational and diagnostic features integrated into circuit chip. GaAs-based integrated circuit designed to serve as optoelectronic interface in phased-array antenna. Intended function to receive digital control signals transmitted on optical fiber and to convert signals to electronic control signals, which then applied to monolithic microwave integrated circuit (MMIC). Also used in reception of high-rate optical digital communications within computers, between computers, and in signal-distribution systems in aircraft, automobiles, and ships. Interface circuit represents significant improvement over preexisting interface circuits in that its clock-signal-recovery subcircuit requires little or no preamble for immediate synchronization.

Kunath, Richard↗
NASA NTRS1992

An optically controlled Ka-band phased array antenna

The design and development of a small, optically controlled phased array antenna suitable for communication satellite applications are discussed. A vertical integration architecture is used which minimizes the size of the array with its associated beamforming network (BFN). The antenna features a four-element linear microstrip array that uses aperture coupling of the antenna elements to the BFN; a modified Wilkinson power divider BFN; and 32 GHz, four-bit monolithic microwave integrated circuit (MMIC) phase shifters in customized quartz packages with corresponding optoelectronic interface circuits (OEIC's) for control signal reception.

Kunath, R. R.↗
NASA NTRS1982

Application of MMIC modules in future multiple beam satellite antenna systems

Multiple beam antenna systems for advanced communication satellites operating in the 30/20 GHz frequency bands (30 GHz uplink, 20 GHz downlink) were developed. Up to twenty 0.3 deg HPBW fixed spot beams and six 0.3 deg HPBW scanning spot beams will be required. Array-fed dual reflector antenna systems in which monolithic microwave integrated circuit (MMIC) phase shift and amplifier modules are used with each radiating element of the feed array for beam pointing and power gain were developed. The feasibility of distributed power amplification and beam pointing with MMIC modules in the elements of an array and to develop a data base for future development were demonstrated. The technical discussion centers around the potential advantages of ""monolithic'' antennas for specific applications as compared to systems using high powered TWT's. These include: reduced losses in the beam forming network; advantage of space combining and graceful degradation; dynamic control of beam pointing and illumination contour; and possibilities for cost and weight reduction.

Smetana, J.↗
DOE OSTI2021

Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

—The switching performance of large area (1cm x 1cm) monolithic 1.2 kV 50 mΩ 4H-SiC bidirectional field effect transistor (BiDFET) with integrated JBS diodes is reported for the first time. The devices were fabricated in a 6-inch commercial foundry and then packaged in a custom-designed four-terminal module. The switching performance of the BiDFET has been observed to be 1.4x better than that of its internal JBSFETs. Dynamic characterization was performed at 800 V with different gate resistances, current levels and case temperatures. An increase in switching losses was observed for the BiDFET with increasing gate resistance and current level as observed for SiC power MOSFETs. The BiDFET showed a 9% reduction in total switching loss from 25 °C to 150 °C with a current of 10 A.

Silicon Carbide, Monolithic, Bidirectional, FourQu↗
NASA NTRS1986

Technology achievements and projections for communication satellites of the future

Multibeam systems of the future using monolithic microwave integrated circuits to provide phase control and power gain are contrasted with discrete microwave power amplifiers from 10 to 75 W and their associated waveguide feeds, phase shifters and power splitters. Challenging new enabling technology areas include advanced electrooptical control and signal feeds. Large scale MMIC's will be used incorporating on chip control interfaces, latching, and phase and amplitude control with power levels of a few watts each. Beam forming algorithms for 80 to 90 deg. wide angle scanning and precise beam forming under wide ranging environments will be required. Satelllite systems using these dynamically reconfigured multibeam antenna systems will demand greater degrees of beam interconnectivity. Multiband and multiservice users will be interconnected through the same space platform. Monolithic switching arrays operating over a wide range of RF and IF frequencies are contrasted with current IF switch technology implemented discretely. Size, weight, and performance improvements by an order of magnitude are projected.

Bagwell, J. W.↗
NASA NTRS1986

Technology achievements and projections for communication satellites of the future

Multibeam systems of the future using monolithic microwave integrated circuits to provide phase control and power gain are contrasted with discrete microwave power amplifiers from 10 to 75 W and their associated waveguide feeds, phase shifters and power splitters. Challenging new enabling technology areas include advanced electrooptical control and signal feeds. Large scale MMIC's will be used incorporating on chip control interfaces, latching, and phase and amplitude control with power levels of a few watts each. Beam forming algorithms for 80 to 90 deg wide angle scanning and precise beam forming under wide ranging environments will be required. Satellite systems using these dynamically reconfigured multibeam antenna systems will demand greater degrees of beam interconnectivity. Multiband and multiservice users will be interconnected through the same space platform. Monolithic switching arrays operating over a wide range of RF and IF frequencies are contrasted with current IF switch technology implemented discretely. Size, weight, and performance improvements by an order of magnitude are projected.

Bagwell, J. W.↗
DOE OSTI2023

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS 2 ) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS 2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal–organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS 2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm 2 V -1 s -1 . Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS 2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗