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At least 271 records · Page 15

Bifacial Multilayer Graphene Float Transfer

A method for graphene transfer which is referred to as “bifacial transfer” that allows transfer of multilayer chemical vapor deposition (CVD) graphene from both sides of a native metal substrate, such as an as-received nickel catalyst, is presented. In traditional transfer methods, the graphene on the “non-preferred” side, that is, the bottom of the substrate, is removed with oxygen plasma before removal of the metal catalyst in etchant solution. Although this treatment prevents undesired aggregation of the graphene films, it fails to utilize both sides of CVD-grown graphene. The bifacial transfer method reduces the cost of multilayer graphene by allowing the transfer of graphene from both sides of the substrate. The quality of graphene transferred from both sides onto target glass and polymer substrates is compared. The results of optical microscopy, confocal Raman spectroscopy, atomic force microscopy, and electronic transport measurements suggest that the quality of the multilayer graphene on the “non-preferred” side does not differ significantly from that of the “preferred” side. Overall, this method will allow more efficient and cost-effective use of graphene by doubling the usable graphene per area of growth substrate, and by eliminating the need for intermediate sacrificial transfer substrates such as poly(methyl methacrylate).

77 NANOSCIENCE AND NANOTECHNOLOGY↗

The Investigation of 6mu Biaxially Oriented Polyethylene 2, 6, -Naphthalate As a Possible Dielectric For Pulse Power Capacitors

The introduction of polythylene -2, 6-Naphthalate (PEN) semicrystalline film with thicknesses of 0.9mu, 1.5mu, 4.0Mu and community. Its unique chemical and high temparterure stability, as well as superior thermo-mechanical properties allow ultra thin ( 2mu) PEN film to be processed into miniature multilayer chip capacitors for surface mount technology (SMT) application that can be used with standard soldering techniques.

Polythylene -2 Ultra thin PEN film Dielectric cons↗

Ultrasonic-Assisted Extrusion Processing for Enhancing Physical Properties of High-Density Polyethylene by Flow-Induced Crystallization

The evolution of crystallinity resulting from stress imposed on a melt, known as flow-induced crystallinity, can strongly influence the mechanical and physical properties of semicrystalline polymers. This study investigates shear-induced crystallization by applying an ultrasonic field to the melt flow as it passes through dies with various geometries. A custom-built sonication die is employed for controlling the dynamic temperature and shear environment, resulting in molecular alignment and potential for flow-induced crystallization. Application of both conventional and ultrasonic shear rates at the equilibrium melt temperature of high-density polyethylene (HDPE) was investigated to accelerate crystallinity and manipulate the crystal morphology across the film in pursuit of improved mechanical and gas barrier properties without the need for additives or other polymer layers. The relationships among ultrasonic-assisted extrusion processing, polymer structure, and performance were analyzed using wide- and small-angle X-ray scattering (WAXS and SAXS), tensile testing, and oxygen transmission rate (OTR) analysis. Multiple linear regression models were implemented to predict the correlation among HDPE structure, process, and properties. Structural analysis revealed that both conventional and ultrasonic shear rates had the most significant influence on lamellar spacing and redistribution of rigid and soft amorphous fractions within the crystalline domains, ultimately dictating the mechanical and physical properties of the films. The goal is to explore the potential of the ultrasonic-assisted high crystallinity monolayer that can replace some of the functionality of complex, heterogeneous multilayer packaging with a single-material film having enhanced oxygen barrier properties.

crystallinity↗

Commissioning of a two-target DC cylindrical magnetron sputter coater for depositing Nb 3 Sn film on Nb superconducting radiofrequency cavities

A DC cylindrical magnetron sputter coater was commissioned and used to coat Nb 2.6 GHz superconducting radiofrequency (SRF) cavity with Nb 3 Sn. The sputter coater has two identical cylindrical magnetrons that can move, with a controlled speed, along the axis of the SRF cavity to coat the inside surface of the cavity. The design of the sputter coater is discussed, along with its performance. Initially, a sample holder that allows coating on flat substrates at positions similar to the equator and beam tubes of a 2.6 GHz SRF cavity was used to test conditions for fabricating Nb 3 Sn layers. Multilayers of Nb and Sn were sequentially sputtered on flat Nb and sapphire substrates mounted on the equivalent positions of the cavity's beam tubes and the equator using the two identical cylindrical magnetrons. Then, the Nb/Sn multilayers were annealed at 950 °C for 3 h. Here, the ~1.2 μm thick Nb 3 Sn film did not show any other Nb–Sn compounds and had a superconducting transition temperature of 17.61–17.76 K. The 2.6 GHz SRF cavity was coated using similar conditions as flat samples. Cryogenic RF testing of the Nb 3 Sn-coated cavity demonstrated a quality factor of 3.2 × 10 8 at an accelerating gradient of 5 MV/m at 4.4 K.

43 PARTICLE ACCELERATORS↗

Multilayer Ferritin Array for Bionanobattery

A thin-film electrode for a bio-nanobattery is produced by consecutively depositing arrays of a ferritin protein on a substrate, employing a spin self-assembly procedure. By this procedure, a first ferritin layer is first formed on the substrate, followed by building a second, oppositely-charged ferritin layer on the top of the first ferritin layer to form a bilayer structure. Oppositely-charged ferritin layers are subsequently deposited on top of each other until a desired number of bilayer structures is produced. An ordered, uniform, stable and robust, thin-film electrode material of enhanced packing density is presented, which provides optimal charge density for the bio-nanobattery.

Chu, Sang-Hyon↗

Low-temperature formation of Ti2AlN during post-deposition annealing of reactive multilayer systems

M n+1 AXn-phase Ti 2 AlN thin-films were synthesized using reactive sputtering-based methods involving the deposition of single-layer TiAlN, and Ti/AlN and TiN/TiAl multilayers of various modulation periods at ambient temperature and subsequent annealing at elevated temperatures. Ex situ and in situ x-ray diffraction measurements were used to characterize the Ti 2 AlN formation temperature and phase fraction. During annealing, Ti/AlN multilayers yielded Ti 2 AlN at a significantly lower in situ temperature of 650 °C compared to TiN/TiAl multilayers or single-layer TiAlN (750 °C). The results suggest a reactive multilayer mechanism whereby distinct Ti and AlN layers react readily to release exothermic energy resulting in lower phase transition temperatures compared to TiN and TiAl layers or mixed TiAlN. With a modulation period of 5 nm, however, Ti/AlN multilayers yielded Ti 2 AlN at a higher temperature of 750 °C, indicating a disruption of the reactive multilayer mechanism due to a higher fraction of low-enthalpy interfacial TiAlN within the film.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Progresses in Developing Micro-Multilayer Multifunctional Electrical Insulation (MMEI) System for High Voltage Applications

Development of the novel patented high voltage insulation system, namely micro-multilayer multifunctional electrical insulation (MMEI) was continued particularly for the future hybrid or all electric aircraft applications. Initially, the concept and feasibility of the MMEI system were successfully demonstrated with its exceptionally high dielectric breakdown voltage via optimizing the multilayer structures of the Kapton® PI films and binder layers such as PFA in terms of individual film thickness and layer configuration. Overall, MMEI structures outperformed most of the state-of-the-art (SOA) polymer insulation materials or structures. Since then, further optimizations and improvement of the system were pursued with specific emphasis on multifunctionalities such as moisture blocking, partial discharge (PD) resistance, durability, etc. Efforts have been also continued to identify the controlling mechanisms for the major improvement in dielectric strength of the MMEI structures via 3-dimensional dielectric failure mode analysis. At the same time, significant progress has been made in scaling up the MMEI structures and assessing their commercial applicability and manufacturability by developing full-scale prototypes of electrical components, such as power cable and bus bar. Overall progresses on the MMEI development to date will be presented in this paper.

Novel Electrical Insulation↗

FIRST RESULTS FROM Nb3Sn COATINGS OF 2.6 GHz Nb SRF CAVITIES USING DC CYLINDRICAL MAGNETRON SPUTTERING SYSTEM

A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950 °C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn phase and Nb (substrate). No peaks from any Nb-Sn compound other than Nb3Sn were detected. Later three 2.6 GHz Nb SRF cavities are coated with ~1 µm thick Nb3Sn. The first Nb3Sn coated cavity reached close to Eacc = 8 MV/m, demonstrating a quality factor Q0 of 3.2 × 108 at Tbath = 4.4 K and Eacc = 5 MV/m, about a factor of three higher than that of Nb at this temperature. Q0 was close to 1.1 × 109, dominated by the residual resistance, at 2 K and Eacc = 5 MV/m. The Nb3Sn coated cavities demonstrated Tc in the range of 17.9 ? 18 K. Here, we present the commissioning experience, system optimization, and the first results from the Nb3Sn fabrication on flat samples and SRF cavities.

Shakel, M.S.↗

First Results From Nb3Sn Coatings of 2.6 GHz Nb SRF Cavities Using DC Cylindrical Magnetron Sputtering System

A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950 °C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn phase and Nb (substrate). No peaks from any Nb- Sn compound other than Nb3Sn were detected. Later three 2.6 GHz Nb SRF cavities are coated with ~1 μm thick Nb3Sn. The first Nb3Sn coated cavity reached close to Eacc = 8 MV/m, demonstrating a quality factor Q0 of 3.2 × 108 at Tbath = 4.4 K and Eacc = 5 MV/m, about a factor of three higher than that of Nb at this temperature. Q0 was close to 1.1 × 109, dominated by the residual resistance, at 2 K and Eacc = 5 MV/m. The Nb3Sn coated cavities demonstrated Tc in the range of 17.9 – 18 K. Here we present the commissioning experience, s ystem optimization, and the first results from the Nb3Sn fabrication on flat samples and SRF cavities.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

FIRST RESULTS FROM Nb3Sn COATINGS OF 2.6 GHz Nb SRF CAVITIES USING DC CYLINDRICAL MAGNETRON SPUTTERING SYSTEM

A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950 °C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn phase and Nb (substrate). No peaks from any Nb-Sn compound other than Nb3Sn were detected. Later three 2.6 GHz Nb SRF cavities are coated with ~1 µm thick Nb3Sn. The first Nb3Sn coated cavity reached close to Eacc = 8 MV/m, demonstrating a quality factor Q0 of 3.2 × 108 at Tbath = 4.4 K and Eacc = 5 MV/m, about a factor of three higher than that of Nb at this temperature. Q0 was close to 1.1 × 109, dominated by the residual resistance, at 2 K and Eacc = 5 MV/m. The Nb3Sn coated cavities demonstrated Tc in the range of 17.9 ? 18 K. Here, we present the commissioning experience, system optimization, and the first results from the Nb3Sn fabrication on flat samples and SRF cavities.

Shakel, M. S.↗

First Results From Nb3Sn Coatings of 2.6 GHz Nb SRF Cavities Using DC Cylindrical Magnetron Sputtering System

A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950°C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn phase and Nb (substrate). No peaks from any Nb- Sn compound other than Nb3Sn were detected. Later three 2.6 GHz Nb SRF cavities are coated with ~1 μm thick Nb3Sn. The first Nb3Sn coated cavity reached close to Eacc = 8 MV/m, demonstrating a quality factor Q0 of $3.2 \times 108$ at Tbath = 4.4 K and Eacc = 5 MV/m, about a factor of three higher than that of Nb at this temperature. Q0 was close to $1.1 \times 109$, dominated by the residual resistance, at 2 K and Eacc = 5 MV/m. The Nb3Sn coated cavities demonstrated Tc in the range of $17.9 -- 18$ K. Here we present the commissioning experience, system optimization, and the first results from the Nb3Sn fabrication on flat samples and SRF cavities.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

First Results from Nb3Sn Coatings of 2.6 GHz Nb SRF Cavities Using DC Cylindrical Magnetron Sputtering System

A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950 {\deg}C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn phase and Nb (substrate). No peaks from any Nb3Sn compound other than Nb3Sn were detected. Later three 2.6 GHz Nb SRF cavities are coated with ~1 $\mu$m thick Nb3Sn. The first Nb3Sn coated cavity reached close to Eacc = 8 MV/m, demonstrating a quality factor Q0 of 3.2 x 108 at Tbath = 4.4 K and Eacc = 5 MV/m, about a factor of three higher than that of Nb at this temperature. Q0 was close to 1.1 x 109, dominated by the residual resistance, at 2 K and Eacc = 5 MV/m. The Nb3Sn coated cavities demonstrated Tc in the range of 17.9 - 18 K. Here we present the commissioning experience, system optimization, and the first results from the Nb3Sn fabrication on flat samples and SRF cavities.

43 PARTICLE ACCELERATORS↗

Optical reflectance imaging reveals interlayer coupling in mechanically stacked MoS 2 and WS 2 bilayers

Optical reflectance imaging is a popular technique for characterizing 2D materials, thanks to its simplicity and speed of data acquisition. The use of this method for studying interlayer phenomena in stacked 2D layers has, however, remained limited. Here we demonstrate that optical imaging can reveal the nature of interlayer coupling in stacked MoS 2 and WS 2 bilayers through their observed reflectance contrast versus the substrate. Successful determination of interlayer coupling requires co-optimization of the illumination wavelength and the thickness of an underlying SiO 2 film. Our observations are supported by multilayer optical calculations together with an analysis of the effect of any interlayer gap. This approach promises quick characterization of constructed 2D material systems.

Nguyen, Vu↗

Apparatus for Testing Flat Specimens of Thermal Insulation

An apparatus has been developed to implement an improved method of testing flat-plate specimens of thermal-insulation materials for cryogenic application. The method includes testing under realistic use conditions that could include vacuum and mechanical loading at a pressure up to 70 psi (=0.48 MPa). The apparatus can accommodate a rigid or flexible specimen having thickness up to 1.25 in. (=3.2 cm) and diameters between 6 and 10 in. (about 15.2 and 25.4 cm, respectively). Typical test conditions include boundary temperatures between 77 K and 373 K and vacuum/interstitial gas filling at a pressure between 10(exp -6) torr (=1.3 x 10(exp -4) Pa) and 760 torr (atmospheric pressure =0.1 MPa). The interstitial gas could be N2, He, CO2, or any other suitable gas to which the insulation is expected to be exposed in use. Relative to prior apparatuses and testing methods, this apparatus and the testing method that it implements offer advantages of relative simplicity and ease of use. The basic principle of operation of the apparatus is that of boil-off calorimetry, using liquid nitrogen or any other suitable liquid that boils at a desired temperature below ambient temperature. Comparative rates of flow of heat through the thicknesses of the specimens (heat-leak rates) and apparent-thermal-conductivity values are obtained from tests of specimens. Absolute values of heat-leak rates and apparent thermal conductivities are computed from a combination of (1) the aforementioned comparative values and (2) calibration factors obtained by testing reference specimens of materials that have known thermal-insulation properties. The apparatus includes a full complement of temperature sensors, a vacuum pump and chamber, a monitoring and control system, and tools and fixtures that enable rapid and reliable installation and removal of specimens. A specimen is installed at the bottom of the vacuum chamber, and a cold-mass assembly that includes a tank is lowered into position above and around the specimen (see figure). A spring-based compensating fixture helps to ensure adequate thermal contact with possibly irregular specimen surfaces. For a high-compression test, the springs can be replaced with spacers. A flat circular load cell at the bottom of the chamber measures the compressive load on the specimen. Once the desired compressive-load, temperature, and vacuum/gas-filling conditions are established, testing begins. During a test, all measurements are recorded by use of a portable data-acquisition system and a computer. The total heat-leak rate is measured and calculated as the boil-off flow rate multiplied by the latent heat of vaporization. The parasitic heat leak (to the side of the specimen and to the top and side of the cold-mass tank) is reduced to a small fraction of the total heat leak by use of a combination of multilayer-insulation (MLI) shield rings, reflective film, a fiberglass/epoxy centering ring, and a bulk fill of aerogel beads. This combination eliminates the need for a cryogenic guard chamber used in a typical prior apparatus to reduce the parasitic heat leak.

Fesmire, James E.↗

Metal DiSulfide thin films synthesized by pulsed ion beam ablation: Self-assembled structures with improved mechanical properties in humid conditions

Thin films composed of transition metal dichalcogenides such as molybdenum disulfide (MoS 2 ) or tungsten disulfide (WS 2 ) are well known for their solid lubricating behavior in dry environments such as space, but deteriorate rapidly in environments where oxygen is present. There have been many attempts over recent decades to improve MoS 2 lubricating performance in humid environments by addition of metals such as titanium to the film. The additions have come in the form of co-sputtering with the MoS 2 , or formation of nano multilayer coatings. We have previously reported on the synthesis of MoS 2 films by high-power ion beam ablation [Prasad et al, Matls. Lett. 65 (2010) 4–6]. The resulting films are observed to contain spheres of pure Mo of 10–100 nm size evenly dispersed throughout the ~1 μm-thick film, a form of self-assembly not before seen in films produced by sputtering or by pulsed laser deposition (PLD). The remaining Mosingle bondS matrix was observed to crystalize in situ under frictional contact into MoS 2 with the basal planes orienting themselves in the direction of sliding underneath the wear surface. The present study concerns metal additions in the form of alternating layers with MoS 2 deposited in between from an ablation target. The addition of Ti resulted in the extension of good tribological performance to humid air conditions, but the path to good performance appears to be relatively narrow. The same distributed Mo spheres were present in the new film, and similar self-assembled morphologies when V was substituted for the Ti, and when multilayers were formed of WS 2 with Zr additions. Furthermore, it appears that addition of Ti resulted in improvements in mechanical film strength that contributed to the wear ability in humid conditions.

Intense ion beams↗

Design of nonpolarizing achromatic beamsplitters with dielectric multilayer coatings

A novel design approach is presented for nominally nonpolarizing beamsplitters with very low polarization over an extended wavelength range, with low angular sensitivity. A high degree of intensity matching for s and p polarization in a given wavelength interval, from 500 to 600 nm, has been obtained for multilayer stacks derived from an initial graded-index film design by matching of the characteristic matrices. This graded-index film design maintains a very low polarization ratio for almost the complete visible region, covering a wavelength range about twice that covered by the derived homogeneous multilayer stack.

Zukic, Muamer↗

Modulating effect of evanescent waves on thin film growth

Atomic-scale smooth thin films are keys to successful integration and proper function of many multilayer-structured devices. However, the intrinsic islandlike growth mode prevents human beings from realizing such ultrasmooth films of many important functional materials. To solve this problem, we propose a negative entropy-infusing method that employs evanescent waves to enhance the downward interlayer diffusion of adatoms and thus transform the islandlike growth mode to the layer-by-layer growth mode. In this work, the formulas of the optical force and the lowered diffusion barrier were derived, and the application of this theory on a simplified example demonstrates significantly improved surface morphologies through numerical simulations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗