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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

A prototype scintillator real‐time beam monitor for ultra‐high dose rate radiotherapy

Background: FLASH Radiotherapy (RT) is an emergent cancer RT modality where an entire therapeutic dose is delivered at more than 1000 times higher dose rate than conventional RT. For clinical trials to be conducted safely, a precise and fast beam monitor that can generate out-of-tolerance beam interrupts is required. This paper describes the overall concept and provides results from a prototype ultra-fast, scintillator-based beam monitor for both proton and electron beam FLASH applications. Purpose: A FLASH Beam Scintillator Monitor (FBSM) is being developed that employs a novel proprietary scintillator material. The FBSM has capabilities that conventional RT detector technologies are unable to simultaneously provide: (1) large area coverage; (2) a low mass profile; (3) a linear response over a broad dynamic range; (4) radiation hardness; (5) real-time analysis to provide an IEC-compliant fast beam-interrupt signal based on true two-dimensional beam imaging, radiation dosimetry and excellent spatial resolution. Methods: The FBSM uses a proprietary low mass, less than 0.5 mm water equivalent, non-hygroscopic, radiation tolerant scintillator material (designated HM: hybrid material) that is viewed by high frame rate CMOS cameras. Folded optics using mirrors enable a thin monitor profile of ∼10 cm. A field programmable gate array (FPGA) data acquisition system generates real-time analysis on a time scale appropriate to the FLASH RT beam modality: 100–1000 Hz for pulsed electrons and 10–20 kHz for quasi-continuous scanning proton pencil beams. An ion beam monitor served as the initial development platform for this work and was tested in low energy heavy-ion beams ( 86 Kr +26 and protons). A prototype FBSM was fabricated and then tested in various radiation beams that included FLASH level dose per pulse electron beams, and a hospital RT clinic with electron beams. Results: Results presented in this report include image quality, response linearity, radiation hardness, spatial resolution, and real-time data processing. Furthermore, the HM scintillator was found to be highly radiation damage resistant. It exhibited a small 0.025%/kGy signal decrease from a 216 kGy cumulative dose resulting from continuous exposure for 15 min at a FLASH compatible dose rate of 237 Gy/s. Measurements of the signal amplitude versus beam fluence demonstrate linear response of the FBSM at FLASH compatible dose rates of >40 Gy/s. Comparison with commercial Gafchromic film indicates that the FBSM produces a high resolution 2D beam image and can reproduce a nearly identical beam profile, including primary beam tails. The spatial resolution was measured at 35–40 µm. Tests of the firmware beta version show successful operation at 20 000 Hz frame rate or 50 µs/frame, where the real-time analysis of the beam parameters is achieved in less than 1 µs. Conclusions: The FBSM is designed to provide real-time beam profile monitoring over a large active area without significantly degrading the beam quality. A prototype device has been staged in particle beams at currents of single particles up to FLASH level dose rates, using both continuous ion beams and pulsed electron beams. Using a novel scintillator, beam profiling has been demonstrated for currents extending from single particles to 10 nA currents. Radiation damage is minimal and even under FLASH conditions would require ≥50 kGy of accumulated exposure in a single spot to result in a 1% decrease in signal output. Beam imaging is comparable to radiochromic films, and provides immediate images without hours of processing. Real-time data processing, taking less than 50 µs (combined data transfer and analysis times), has been implemented in firmware for 20 kHz frame rates for continuous proton beams.

2D beam imaging↗
NASA NTRS2016

Multidirectional Cosmic Ray Ion Detector for Deep Space CubeSats

Understanding the nature of anisotropy of solar energetic protons (SEPs) and galactic cosmic ray (GCR) fluxes in the interplanetary medium is crucial in characterizing time-dependent radiation exposure in interplanetary space for future exploration missions. NASA Glenn Research Center has proposed a CubeSat-based instrument to study solar and cosmic ray ions in lunar orbit or deep space. The objective of Solar Proton Anisotropy and Galactic cosmic ray High Energy Transport Instrument (SPAGHETI) is to provide multi-directional ion data to further understand anisotropies in SEP and GCR flux. The instrument is to be developed using large area detectors fabricated from high density, high purity silicon carbide (SiC) to measure linear energy transfer (LET) of ions. Stacks of these LET detectors are arranged in a CubeSat at orthogonal directions to provide multidirectional measurements. The low-noise, thermally-stable nature of silicon carbide and its radiation tolerance allows the multidirectional array of detector stacks to be packed in a 6U CubeSat without active cooling. A concept involving additional coincidence/anticoincidence detectors and a high energy Cherenkov detector is possible to further expand ion energy range and sensitivity.

Extraterrestrial Radiation↗
DOE OSTI2021

Improvement of Front-Junction GaInP by Point-Defect Injection and Annealing

Traditional front junction GaInP solar cells are radiation tolerant and can have good diffusion length, but have limited voltage and thus efficiency. Here, we investigate the impact of annealing on GaInP device performance. First, Zn-doped GaInP/AlGaInP double heterojunction structures are studied in order to investigate the impact of annealing in a simple structure. While standard anneals lower diffusion length and lifetime, annealing after injecting point-defects improves material quality, presumably by eliminating sources of non-radiative recombination. Atomic ordering is reduced by the anneal, which raises the device bandgap and requires consideration. These results can be used to improve front junction device performance while controlling the bandgap. Then, GaInP front-junction devices are created using anneals with and without point-defect injection. Voc and EQE trends follow the diffusion length and lifetime trends from the DH structures. Baseline devices have Woc of 0.484 V, raising to 0.504 V after a high temperature anneal. However, injecting point defects prior to the anneal results in a front junction device with Woc of 0.405 V and a diffusion length greater than 8 micrometers. Optimized front-junction GaInP devices with an ARC have ~20% efficiency without a rear reflector.

anneal↗
DOE OSTI2021

Improvement of Front-Junction GaInP by Point-Defect Injection and Annealing: Preprint

Traditional front junction GaInP solar cells are radiation tolerant and can have good diffusion length, but have limited voltage and thus efficiency. Here, we investigate the impact of annealing on GaInP device performance. First, Zn-doped GaInP/AlGaInP double heterojunction structures are studied in order to investigate the impact of annealing in a simple structure. While standard anneals lower diffusion length and lifetime, annealing after injecting point-defects improves material quality, presumably by eliminating sources of non-radiative recombination. Atomic ordering is reduced by the anneal, which raises the device bandgap and requires consideration. These results can be used to improve front junction device performance while controlling the bandgap. Then, GaInP front-junction devices are created using anneals with and without point-defect injection. Voc and EQE trends follow the diffusion length and lifetime trends from the DH structures. Baseline devices have Woc of 0.484 V, raising to 0.504 V after a high temperature anneal. However, injecting point defects prior to the anneal results in a front junction device with Woc of 0.405 V and a diffusion length greater than 8 micrometers. Optimized front-junction GaInP devices with an ARC have ~20% efficiency without a rear reflector.

anneal↗
DOE OSTI2023

Proton radiation effects on electronic defect states in MOCVD-grown (010) β -Ga 2 O 3

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8 × 10 13 cm –2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm –1 . The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E c -2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E c -0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E C -0.36, E C -0.63, and E C -1.09 eV were newly detected after proton irradiation, and two pre-existing states at E C -1.2 and E C -4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E c -0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.

42 ENGINEERING↗
DOE OSTI2022

Phase instabilities in austenitic steels during particle bombardment at high and low dose rates

Disruption of phase stability by energetic particle bombardment is a major challenge in designing advanced radiation-tolerant alloys and ion beam processing of nanocomposites. Particularly, ballistic dissolution susceptibility of different solute nanocluster species in alloys is poorly understood. Here, low dose rate neutron irradiations were conducted on a Fe-Cr-Ni based austenitic steel in the BOR-60 reactor (9.4 × 10 -7 dpa/s, 318 °C) followed by accelerated dose rate ion irradiations at multiple temperatures ( 10 -3 dpa/s, 380 – 420 °C). Using atom probe tomography, the stability of radiation-enhanced Cu-rich and radiation-induced Ni-Si-Mn-rich nanoclusters was evaluated. During neutron irradiation, Cu-rich clusters nucleated with their core concentrations progressively increasing with dose, while Ni-Si-Mn-rich clusters formed and evolved into G-phase precipitates. Ion irradiations dramatically altered the nanoclusters. Cu-rich clusters were ballistically dissolved, but Ni-Si-Mn-rich clusters remained stable and coarsened with dose at 400 and 420 °C, highlighting that different nanocluster species in a single microstructure can have innately distinct ballistic dissolution susceptibilities. Solute-specific recoil rates were incorporated into the Heinig precipitate stability model, which shows that in addition to radiation-enhanced diffusion, recovery from ballistic dissolution depends on solute concentration gradient near cluster interfaces. Finally, the combined experimental-modeling study quantified the critical temperatures and damage rates where ballistic dissolution dominates for each cluster species.

36 MATERIALS SCIENCE↗
NASA NTRSDate not supplied

Signal and Power Integrity Design Methodology for High-Performance Flight Computing Systems

Computing capabilities of space systems have in-creased onboard performance by orders of magnitude with the use of radiation-tolerant field-programmable gate arrays (FPGA)and processors. The incorporation of signal and power integrity analysis with printed circuit board (PCB) design in reliable computing architectures for space systems has become critical to enable future mission capabilities. Developers launch high-performance processors into a breadth of orbits and missions, running varying applications that create challenges for designing reliable computing hardware. Specifically, for these designs, academic and industry research has focused on component radiation performance, fault mitigation, and reliable architectures. How-ever, other design parameters including electromagnetic interference (EMI), PCB stackup, signal integrity (SI), voltage regulator module (VRM) design, and power distribution network (PDN)are often deprioritized or disregarded as the design matures. Since these characteristics are becoming more significant in high-performance processor designs, this research presents a hardware design and analysis methodology for high-performance, space-computing systems that focuses on a holistic design approach and PDN reliability. While these challenges exist across all space hardware, the reduced PCB dimensions imposed by SmallSats and CubeSats introduce additional hurdles, specifically to VRM and decoupling design. By examining the relationship between the PDN and radiation performance, an analytical relationship is developed that incorporates Total Ionizing Dose and Single-Event Transients to ensure reliability throughout the mission duration. The presented design methodology is applied to the SpaceCube v3.0 Mini, an FPGA-based on-board science data processing system developed at NASA Goddard Space Flight Center.

Advanced avionics↗
DOE OSTI2021

Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory

Here, we have evaluated the Read-Retry (RR) functionality of the 3-D NAND chip of multilevel-cell (MLC) configuration after total ionization dose (TID) exposure. The RR function is typically offered in the high-density state-of-the-art NAND memory chips to recover data once the default memory read method fails to correct data with error correction codes (ECCs). In this work, we have applied the RR method on the irradiated 3-D NAND chip that was exposed with a Co-60 gamma-ray source for TID up to 50 krad (Si). Based on our experimental evaluation results, we have proposed an algorithm to efficiently implement the RR method to extend the radiation tolerance of the NAND memory chip. Our experimental evaluation shows that the RR method coupled with ECC can ensure data integrity of MLC 3-D NAND for TID up to 50 krad (Si).

3-D NAND↗
DOE OSTI2021

Irradiation-induced amorphization of Fe-Y-based second phase particles in accident-tolerant FeCrAl alloys

Here, second phase intermetallic particles in an advanced accident-tolerant FeCrAl (Fe-13Cr-5Al-2Mo) alloy are formed in the α-Fe matrix during processing. These particles are prominently related to the added Y. Neutron irradiation to ~7 displacements per atom (dpa) with a dose rate of ~8.16 × 10 -7 dpa/s at 282 °C resulted in the amorphization of these precipitates which could degrade the mechanical properties of the FeCrAl alloys. Analytical electron microscopy and diffraction analysis combined with structural freedom analysis have been used to investigate the radiation resistance of the second phase particles. Radiation tolerance is closely linked to the particle Fe-Y content and can be tailored using the structure freedom value.

36 MATERIALS SCIENCE↗
NASA NTRS2010

Reconfigurable Fault Tolerance for FPGAs

The invention allows a field-programmable gate array (FPGA) or similar device to be efficiently reconfigured in whole or in part to provide higher capacity, non-redundant operation. The redundant device consists of functional units such as adders or multipliers, configuration memory for the functional units, a programmable routing method, configuration memory for the routing method, and various other features such as block RAM, I/O (random access memory, input/output) capability, dedicated carry logic, etc. The redundant device has three identical sets of functional units and routing resources and majority voters that correct errors. The configuration memory may or may not be redundant, depending on need. For example, SRAM-based FPGAs will need some type of radiation-tolerant configuration memory, or they will need triple-redundant configuration memory. Flash or anti-fuse devices will generally not need redundant configuration memory. Some means of loading and verifying the configuration memory is also required. These are all components of the pre-existing redundant FPGA. This innovation modifies the voter to accept a MODE input, which specifies whether ordinary voting is to occur, or if redundancy is to be split. Generally, additional routing resources will also be required to pass data between sections of the device created by splitting the redundancy. In redundancy mode, the voters produce an output corresponding to the two inputs that agree, in the usual fashion. In the split mode, the voters select just one input and convey this to the output, ignoring the other inputs. In a dual-redundant system (as opposed to triple-redundant), instead of a voter, there is some means to latch or gate a state update only when both inputs agree. In this case, the invention would require modification of the latch or gate so that it would operate normally in redundant mode, and would separately latch or gate the inputs in non-redundant mode.

Shuler, Robert, Jr.↗
NASA NTRS2002

Effects of proton irradiation on luminescence and carrier dynamics of self-assembled III-V quatum dots

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4x10^8 to 3x10'^10 cm^-2), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

nanotechnology DLTS optical properties pn diodes q↗
NASA NTRS2001

PiVoT GPS Receiver

NASA Goddard Space Flight Center has built an open architecture, 24 channel space flight GPS receiver. The CompactPCI PiVoT GPS receiver card is based on the Mitel/GEC Plessey Builder-2 board. PiVoT uses two Plessey 2021 correlators to allow tracking of up to 24 separate GPS SV's on unique channels. Its four front ends can support four independent antennas, making it a useful card for hosting GPS attitude determination algorithms. It has been built using space quality, radiation tolerant parts. The PiVoT card will track a weaker signal than the original Builder 2 board. It also hosts an improved clock oscillator. The PiVoT software is based on the original Plessey Builder 2 software ported to the Linux operating system. The software is POSIX complaint and can easily be converted to other POSIX operating systems. The software is open source to anyone with a licensing agreement with Plessey. Additional tasks can be added to the software to support GPS science experiments or attitude determination algorithms. The next generation PiVoT receiver will be a single radiation hardened CompactPCI card containing the microprocessor and the GPS receiver optimized for use above the GPS constellation. PiVoT was flown successfully on a balloon in July, 2001, for its first non-simulated flight.

Wennersten, Miriam Dvorak↗
DOE OSTI2025

Rad-hard readout system for Timepix3 Hybrid Pixel Detectors

The Beam Gas Ionisation (BGI) profile monitor, located in the Proton Synchrotron (PS) and Super Proton Synchrotron (SPS) at CERN, requires a radiation-tolerant readout system to transfer data from the challenging accelerator surroundings to the back-end for processing. The system needs to control and acquire data from four Timepix3 Hybrid Pixel Detectors (HPDs) located directly inside the beam pipe, a highly radioactive environment. It must ensure reliability given limited hardware access and preserve signal integrity for the high-speed data (32 channels at 320 MHz). However, due to the unavailability of a suitable rad-hard Timepix3 readout, the Beam Instrumentation PiXeL (BIPXL) readout system was designed to meet these requirements. This system employs radiation-hardened components such as the GBTx and the FEASTMP, both developed at CERN. It will be compatible with forthcoming hybrid pixel detector initiatives in similarly harsh radiation conditions.

47 OTHER INSTRUMENTATION↗
NASA NTRSDate not supplied

Yeast Strain Development and Hardware Testing in Preparation of a Lunar BioSensor

With Artemis missions underway, it is clear we are going back to the Moon to stay. Before sending Astronauts for long-duration missions, it is crucial to understand the technological and biomedical countermeasures needed to protect them before they get there. We can use knowledge gained from biological CubeSats to guide the next generation of experiments to support human habitation on the Moon. Lunar Explorer Instrument for space biology Applications (LEIA) is NASA’s latest BioSensor, adapted BioSentinel, the only CubeSat to travel Beyond Low Earth Orbit. BioSentinel launched on Artemis I and is currently >50 million kilometers from Earth (as of July 2024). LEIA aims to identify biological responses to the Lunar environment, which unprotected against would pose a threat to astronauts (cancer, cardiovascular disease, neurological impairment). The suite of instruments within LEIA detects Lunar radiation using two on-board radiation sensors (ARES charged particle detector, Mini-Fast Neutron Detector), then monitors real-time biological responses to the Lunar environment via an autonomous microfluidic system, fit with 3-LED emitter and detector boards and the alamarBlue metabolic indicator dye. LEIA will use a genetic approach in addition to synthetic biology to test counter-measure production in space, with the goal to inform and protect astronauts for future Moon missions. We have conducted preliminary tests in preparation for launch to the anticipated South Pole of the Moon, optimizing the biology (strain down-selection, desiccation tolerance, radiation sensitivity) and improving the hardware (including a blue LED to detect the beta-carotene countermeasure product). Our team will discuss these findings in several parts – an overview of the LEIA mission (Mark Settles), adapting flexible CubeSat platforms for deep-space applications (Sergio Santa Maria, Kira Rienecker), developing new technologies to support LEIA ground studies (Chinmayee Govinda Raj), and yeast strain development and hardware testing in preparation for LEIA (presented here).

synthetic biology↗
NASA NTRS2001

PiVoT GPS Receiver

NASA Goddard Space Flight Center has built an open architecture, 24 channel spaceflight Global Positioning System (GPS) receiver. The compact PCI PiVoT GPS receiver card is based on the Mitel/GEC Plessey Builder 2 board. PiVoT uses two Plessey 2021 correlators to allow tracking of up to 24 separate GPS SV's on unique channels. Its four front ends can support four independent antennas, making it a useful card for hosting GPS attitude determination algorithms. It has been built using space quality, radiation tolerant parts. The PiVoT card works at a lower signal to noise ratio than the original Builder 2 board. It also hosts an improved clock oscillator. The PiVoT software is based on the original Piessey Builder 2 software ported to the Linux operating system. The software is posix compliant and can be easily converted to other posix operating systems. The software is open source to anyone with a licensing agreement with Plessey. Additional tasks can be added to the software to support GPS science experiments or attitude determination algorithms. The next generation PiVoT receiver will be a single radiation hardened compact PCI card containing the microprocessor and the GPS receiver optimized for use above the GPS constellation.

Wennersten, Miriam↗
DOE OSTI2020

The Need for a Maximum Intensity Accident in ANS 8-Series Standards

The Y-12 National Security Complex has installed one Criticality Accident Alarm System (CAAS) under the ANS 8.3 framework as a safety significant system, and is in the process of designing, installing, and qualifying another. As a safety significant system, the Y-12 CAAS is required to demonstrate that it is able to perform its function and actuate an alarm when exposed to the radiation from both a Minimum Accident of Concern and a maximum intensity accident. The ANS 8-series standards do not present a maximum accident to be considered, nor do they specify radiation tolerance requirements for the CAAS equipment, leading CAAS vendors to potentially use other standards that provide inadequate criteria. In this paper, the historical basis and need for a maximum intensity accident in the ANS standards is discussed, the fission rate of a maximum intensity accident is proposed, and the effects of this accident on CAAS analysis and the vendor’s equipment qualification are discussed.

61 RADIATION PROTECTION AND DOSIMETRY↗
DOE OSTI2020

Radiation effects in Mn+1AXn phases

M n+1 AX n phases exhibit unique laminated atomic structures that result in properties typical of both ceramics and metals. Due to their unusual characteristics, these materials have been proposed for use in a wide variety of industrial applications, including in nuclear reactors—both fission and fusion systems—where they will be exposed to extreme irradiation conditions and high temperatures. Recently, numerous studies have investigated radiation effects on the M n+1 AX n phases, revealing complex behavior—phase transformations, surface modification, and mechanical property changes—induced by ion or neutron irradiation over a range of temperatures. This review summarizes recent experimental and theoretical work on the response of the M n+1 AX n phases to irradiation and discusses the intrinsic controls on the radiation tolerance of these materials. Based on the review of the present body of work, a comprehensive understanding of the mechanisms of irradiation-induced structural modification and defect evolution in M n+1 AX n phases is developed, as well as proposed strategies for designing novel M n+1 AX n phases with enhanced performance under extreme irradiation conditions.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Development of interatomic potential and effect of ordering on defect properties in CrMnV

Developing materials that can withstand extreme environments, such as high radiation doses and elevated temperatures, is crucial for next-generation particle accelerators, including the 2.4 MW Long-Baseline Neutrino Facility. High-Entropy Alloys have emerged as promising candidates for beam window materials due to their superior mechanical strength, corrosion resistance, and radiation tolerance. In this study, we focus on the Cr–Mn–V alloy system, developing and employing machine-learning interatomic potentials (MLIPs) to investigate the formation of an ordered phase and its influence on defect properties. Using hybrid Monte Carlo-Molecular Dynamics simulations, we observe the formation of a B2-ordered phase at lower temperatures, consistent with Density Functional Theory (DFT) predictions. Ordered structures display a bimodal distribution of migration energies and reduced mean square displacement values, indicating suppressed vacancy diffusion. Our results also show that the migration energy barrier varies based on the atomic species, with Mn and V exhibiting the highest and lowest average barriers, respectively. These findings suggest that atomic ordering inhibits defect mobility, potentially enhancing the radiation resistance of CrMnV alloys. The validated MLIP provides a reliable framework for simulations that are faster than traditional DFT while maintaining the accuracy required to study defect and ordering properties.

36 MATERIALS SCIENCE↗