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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Hydrogen-silicon carbide interactions

A study of the thermochemistry and kinetics of hydrogen environmental attack of silicon carbide was conducted for temperatures in the range from 1100 C to 1400 C. Thermodynamic maps based on the parameters of pressure and oxygen/moisture content were constructed. With increasing moisture levels, four distinct regions of attack were identified. Each region is defined by the thermodynamically stable solid phases. The theoretically stable solid phases of Region 1 are silicon carbide and silicon. Experimental evidence is provided to support this thermodynamic prediction. Silicon carbide is the single stable solid phase in Region 2. Active attack of the silicon carbide in this region occurs by the formation of gases of SiO, CO, CH4, SiH4, and SiH. Analysis of the kinetics of reaction for Region 2 at 1300 C show the attack of the silicon carbide to be controlled by gas phase diffusion of H2O to the sample. Silicon carbide and silica are the stable phases common to Regions 3 and 4. These two regions are characterized by the passive oxidation of silicon carbide and formation of a protective silica layer.

Eckel, Andrew J.↗
NASA NTRS1990

Hydrogen-silicon carbide interactions

A study of the thermochemistry and kinetics of hydrogen environmental attack of silicon carbide was conducted for temperatures in the range from 1100 C to 1400 C. Thermodynamics maps based on the parameters of pressure and oxygen/moisture content were constructed. With increasing moisture levels, four distinct regions of attack were identified. Each region is defined by the thermodynamically stable solid phases. The theoretically stable solid phases of region 1 are silicon carbide and silicon. Experimental evidence is provided to support this thermodynamic prediction. Silicone carbide is the single stable solid phase in region 2. Active attack of the silicon carbide in this region occurs by the formation of gases of SiO, CO, CH4, SiH4 and SiH. Analyses of the kinetics of reaction for region 2 at 1300 C show the attack of the silicon carbide to be controlled by gas phase diffusion of H2O to the sample. Silicon carbide and silica are the stable phases common to regions 3 and 4. These two regions are characterized by the passive oxidation of silicon carbide and formation of a protective silica layer.

Eckel, Andrew J.↗
NASA NTRS1972

Computer simulation of impurity diffusion in silicon, part 1

The elementary classical models for idealized diffusion conditions are described, and the principles are then used in developing more realistic models. The practical models require some type of numerical analysis. The numerical techniques are outlined and details concerning their implementation are given. Some results are presented which were obtained with the computer programs implementing the numerical techniques with implicit and explicit methods. Special problems of impurity-rich interlayers forming between an oxide and silicon are considered. A set of computed curves for sheet resistance, junction depth, and oxide thickness for different diffusion schedules is included.

Gassaway, J. D.↗
NASA NTRS1980

Processing dependence of metal/tunnel-oxide/silicon junctions

The effects of process variations on the fixed-charge density, interface-state density, and tunneling properties of tunnel oxides on (100) silicon are discussed. Annealing the oxide in nitrogen reduces the fixed-charge and interface-state densities substantially, but also causes a marked increase in oxide capacitance. Anneals in forming gas before metallization alter the interface-state distribution and decrease the insulating qualities of the tunneling oxides. Postmetallization anneals in forming gas reduce the interface-state density to 1 x 10 to the 11th e/sq cm V or below, and appear not to affect the current through the oxide. No evidence for metal-induced interface states is observed.

Dressendorfer, P. V.↗
NASA NTRSDate not supplied

Material Response Analysis of PICA-NuSil at the Hypersonic Materials Environmental Test System

Phenolic impregnated carbon ablator (PICA) is a thermal protection system (TPS) that gained heritage during the Stardust mission and is the baseline TPS material for expeditions to Mars (e.g., Mars Science Laboratory and Mars 2020).1 PICA is friable; therefore, a polysiloxane resin (NuSil CV-1144-0) is deposited onto the surface of flight hardware before assembly, test, and launch operations (ATLO) to mitigate particle shedding. Furthermore, the Mars Science Laboratory (MSL) and Mars 2020 heatshields were instrumented with an array of thermocouple plugs (MEDLI Integrated Sensor Plugs or MISP) designed to measure the in-depth thermal response of PICA during flight. Post-flight analysis of MISP data suggests that recession was lower than predicted, and NuSil is suspected as a reasonable cause. NuSil primarily consists of a copolymer blend of dimethyl and diphenyl-substituted polysiloxane resin. Four decades of research in the field of polymer-derived ceramics demonstrate that polysiloxane resins form oxidation-resistant silicon oxycarbide materials at pyrolysis temperatures as low as 800 °C. -2 Furthermore, silicon oxycarbide materials exhibit excellent thermal stability at relatively high-temperatures (< 1200 °C) but eventually decompose via carbothermal reduction. -3 Therefore, it is reasonable to suggest that NuSil forms an oxidation-resistant thermal barrier coating on the TPS surface and influences the material response during atmospheric entry. Evidence for this notion was observed during prior arc-jet testing at both the Aerodynamic Heating Facility (AHF) and the Panel Test Facility (PTF) at the NASA Ames Research Center. Articles of PICA were subjected to testing in airflow, and a temperature discontinuity was recorded at the surface of coupons coated with NuSil. A glassy coating was observed to form at the surface in shear flow configurations (wedge and panel) under moderate heat fluxes. Furthermore, state-of-the-art material response models have yet to account for the underlying physics and chemistry of the temperature discontinuity. To this end, a pathfinder test campaign was executed at the Hypersonic Materials Environmental Test System (HyMETS) to enhance the fundamental understanding of PICA-NuSil ablation phenomena and provide a preliminary data set to aid in the development of material response models.

PICA↗
NASA NTRS1971

A method of treating the non-grey error in total emittance measurements

In techniques for the rapid determination of total emittance, the sample is generally exposed to surroundings that are at a different temperature than the sample's surface. When the infrared spectral reflectance of the surface is spectrally selective, these techniques introduce an error into the total emittance values. Surfaces of aluminum overcoated with oxides of various thicknesses fall into this class. Because they are often used as temperature control coatings on satellites, their emittances must be accurately known. The magnitude of the error was calculated for Alzak and silicon oxide-coated aluminum and was shown to be dependent on the thickness of the oxide coating. The results demonstrate that, because the magnitude of the error is thickness-dependent, it is generally impossible or impractical to eliminate it by calibrating the measuring device.

Heaney, J. B.↗
NASA NTRS2015

Experimental and Theoretical Studies of Volatile Metal Hydroxides

Modern superalloys used in the construction of turbomachinery contain a wide range of metals in trace quantities. In addition, metal oxides and silicon dioxide are used to form Thermal Barrier Coatings (TBC) to protect the underlying metal in turbine blades. Formation of volatile hydroxides at elevated temperatures is an important mechanism for corrosion of metal alloys or oxides in combustion environments (N. Jacobson, D. Myers, E. Opila, and E. Copland, J. Phys. Chem. Solids 66, 471-478, 2005). Thermodynamic data is essential to proper design of components of modern gas turbines. It is necessary to first establish the identity of volatile hydroxides formed from the reaction of a given system with high temperature water vapor, and then to determine the equilibrium pressures of the species under operating conditions. Theoretical calculations of reaction energies are an important check of experimental results. This presentation reports results for several important systems: Si-O-H, Cr-O-H, Al-O-H, Ti-O-H, and ongoing studies of Ta-O-H.

Thermal Barrier Coatings↗
NASA NTRS2008

SiC JFET Transistor Circuit Model for Extreme Temperature Range

A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

Neudeck, Philip G.↗
NASA NTRS1989

Reflection/suppression coatings for 900 - 1200 A radiation

The design and performance of multiple-layer, selective-reflection, selective-suppression coatings for the 900 - 1200 A band are described. These coatings are designed to optimize both high reflectivity at a desirable wavelength and low reflectivity at an undesirable wavelength. The minimum structure for a selective coating consists of a thin metal or metal oxide layer (50 - 150 A thickness) over an aluminum substrate protected with a semi-transparent dielectric (100 - 1000 A thickness). Predicted coating performance is strongly effected by varying the layer combination and thickness. A graphical method of optimizing the coating layer structure is developed. Aluminum, silicon, their oxides, and gold have been investigated as coating layer materials. A very simple coating with a 1026 to 1216 A reflectivity ratio greater than 100 was fabricated. Such reflection/suppression coatings may be of great utility to spaceborne EUV spectrographs.

Edelstein, Jerry↗
NASA NTRS1979

Capacitance transients in p-type GaAs MOS structures and application to lifetime mapping during solar cell fabrication

Fabrication on p-type GaAs of MOS structures in which the quality of the oxide is such that the surface can be driven into deep inversion by a voltage pulse is reported. The capacitance transients in such MOS capacitors as a function of step amplitude and temperature were measured and the transients were analyzed by an extension of a method for silicon. The oxides were produced by plasma oxidation on an LPE-grown p-type GaAs specimen with N sub A of 3x10 to the 17th power/cu cm. The capacitors were produced by depositing 50 microns-diameter gold dots over the native oxide and, therefore, the lifetime is localized to the area under the dot. The method permits extraction of both the bulk lifetime and the interface recombination velocity. These parameters on samples with different N sub A were measured and a correlation between tau sub g and N sub A was found.

Vitale, G.↗
NASA NTRS1995

Oxidation Behavior of Carbon Fiber Reinforced Silicon Carbide Composites

Carbon fiber reinforced Silicon Carbide (C-SiC) composites offer high strength at high temperatures and good oxidation resistance. However, these composites present some matrix microcracks which allow the path of oxygen to the fiber. The aim of this research was to study the effectiveness of a new Silicon Carbide (SiC) coating developed by DUPONT-LANXIDE to enhance the oxidation resistance of C-SiC composites. A thermogravimetric analysis was used to determine the oxidation rate of the samples at different temperatures and pressures. The Dupont coat proved to be a good protection for the SiC matrix at temperatures lower than 1240 C at low and high pressures. On the other hand, at temperatures above 1340 C the Dupont coat did not seem to give good protection to the composite fiber and matrix. Even though some results of the tests have been discussed, because of time restraints, only a small portion of the desired tests could be completed. Therefore, no major conclusions or results about the effectiveness of the coat are available at this time.

Valentin, Victor M.↗
NASA NTRS2000

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Barnard, Thomas Duncan↗
NASA NTRS2001

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Barnard, Thomas Duncan↗