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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Unlocking Electrostrain in Plastically Deformed Barium Titanate

Achieving substantial electrostrain alongside a large effective piezoelectric strain coefficient (d 33 *) in piezoelectric materials remains a formidable challenge for advanced actuator applications. Here, in this work, a straightforward approach to enhance these properties by strategically designing the domain structure and controlling the domain switching through the introduction of arrays of ordered {100}<100> dislocations is proposed. This dislocation engineering yields an intrinsic lock-in steady–state electrostrain of 0.69% at a low field of 10 kV cm -1 without external stress and an output strain energy density of 5.24 J cm -3 in single-crystal BaTiO 3 , outperforming the benchmark piezoceramics and relaxor ferroelectric single-crystals. Additionally, applying a compression stress of 6 MPa fully unlocks electrostrains exceeding 1%, yielding a remarkable d 33 * value over 10 000 pm V -1 and achieving a record-high strain energy density of 11.67 J cm -3 . Optical and transmission electron microscopy, paired with laboratory and synchrotron X-ray diffraction, is employed to rationalize the observed electrostrain. Phase-field simulations further elucidate the impact of charged dislocations on domain nucleation and domain switching. These findings present an effective and sustainable strategy for developing high-performance, lead-free piezoelectric materials without the need for additional chemical elements, offering immense potential for actuator technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Manipulating Ferroelectric Topological Polar Structures with Twisted Light

Abstract The dynamic control of non‐equilibrium states represents a central challenge in condensed matter physics. While intense terahertz fields drive metal‐insulator transitions and ferroelectricity via soft phonon modes, recent theory suggests that twisted light with orbital angular momentum (OAM) offers a distinct route to manipulate ferroelectric order and stabilize topological excitations including skyrmions, vortices, and Hopfions. Control of ferroelectric polarization in quasi‐2D CsBiNb 2 O 7 (CBNO) is demonstrated using non‐resonant twisted ultra‐violet (UV) light (375 nm, 800 THz). Combining in situ X‐ray Bragg coherent diffractive imaging (BCDI), twisted optical Raman spectroscopy, and density functional theory (DFT), three‐dimensional (3D) ionic displacements, strain fields, and polarization changes are resolved in single crystals. Operando measurements reveal light‐induced strain hysteresis under twisted light–a hallmark of nonlinear, history‐dependent ferroelastic switching driven by OAM. Discrete, irreversible domain transitions emerge as the topological charge ℓ is cycled, stabilizing non‐trivial domain textures including vortex‐antivortex pairs, Bloch/anti‐Bloch points, and merons. These persist after OAM removal, indicating a memory effect. Competing mechanisms are discussed, including multiphoton absorption, strain‐mediated polarization switching, and defect‐wall interactions. The findings establish structured light as a tool for deterministic, reversible control of ferroic states, enabling optically reconfigurable non‐volatile devices.

Chemistry↗
DOE OSTI2024

Tunable Anomalous Hall Effect in a Kagomé Ferromagnetic Weyl Semimetal

Emerging from the intricate interplay of topology and magnetism, the giant anomalous Hall effect (AHE) is the most known topological property of the recently discovered kagomé ferromagnetic Weyl semimetal Co 3 Sn 2 S 2 with the magnetic Co atoms arranged on a kagomé lattice. Here it is reported that the AHE in Co 3 Sn 2 S 2 can be fine-tuned by an applied magnetic field orientated within ≈2° of the kagomé plane, while beyond this regime, it stays unchanged. Particularly, it can vanish in magnetic fields parallel to the kagomé plane and even decrease in magnetic fields collinear with the spin direction. This tunable AHE can be attributed to local spin switching enabled by the geometrical frustration of the magnetic kagomé lattice, revealing that spins in a kagomé ferromagnet change their switching behavior as the magnetic field approaches the kagomé plane. Furthermore, these results also suggest a versatile way to tune the properties of a kagomé magnet.

anomalous Hall effect↗
DOE OSTI2024

Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf 0.5 Zr 0.5 O 2 Fatigue

As a promising candidate for nonvolatile memory devices, the hafnia-based ferroelectric system has recently been a hot research topic. Although significant progress has been made over the past decade, the endurance problem is still an obstacle to its final application. In perovskite-based ferroelectrics, such as the well-studied Pb[Zr x Ti 1-x ]O 3 (PZT) family, polarization fatigue has been discussed within the framework of the interaction of charged defects (such as oxygen vacancies) with the moving domains during the switching process, particularly at the electrode-ferroelectric interface. Armed with this background, a hypothesis is set out to test that a similar mechanism can be in play with the hafnia-based ferroelectrics. The conducting perovskite La-Sr-Mn-O is used as the contact electrode to create La 0.67 Sr 0.33 MnO 3 / Hf 0.5 Zr 0.5 O 2 (HZO)/ La 0.67 Sr 0.33 MnO 3 capacitor structures deposited on SrTiO 3 -Si substrates. Nanoscale X-ray diffraction is performed on single capacitors, and a structural phase transition from polar o-phase toward non-polar m-phase is demonstrated during the bipolar switching process. The energy landscape of multiphase HZO has been calculated at varying oxygen vacancy concentrations. Based on both theoretical and experimental results, it is found that a polar to non-polar phase transformation caused by oxygen vacancy redistribution during electric cycling is a likely explanation for fatigue in HZO.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Strain Fluctuations Unlock Ferroelectricity in Wurtzites

Ferroelectrics are of practical interest for non-volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated by film-thickness limitations, which impede polarization reversal under low applied voltage. Wurtzite materials, including magnesium-substituted zinc oxide (Zn,Mg)O, have been shown to exhibit scalable ferroelectricity as thin films. In this work, the origins of ferroelectricity in (Zn,Mg)O are explained, showing that large strain fluctuations emerge locally in (Zn,Mg)O and can reduce local barriers to ferroelectric switching by more than 40%. Concurrent experimental and computational evidence of these effects are provided by demonstrating polarization switching in ZnO/(Zn,Mg)O/ZnO heterostructures featuring built-in interfacial strain gradients. These results open up an avenue to develop scalable ferroelectrics by controlling strain fluctuations atomistically.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Piezochromic Behavior of 2,4,6-Triphenylpyrylium Tetrachloroferrate

In advanced photonics, there is a growing interest in piezochromic luminescent materials that exhibit multicolor switching, driven by their potential applications in optical recording, memory, and sensors. Here, the piezochromic behavior of 2,4,6-triphenylpyrylium tetrachloroferrate (Py-FeCl 4 ) under high pressures from 0 to 9 GPa is reported. The observed multicolor changing properties of Py-FeCl 4 (yellow–orange–red–maroon–black) are found to be fully reversible upon decompression to ambient conditions. The mechanism of Py-FeCl 4 piezochromism is investigated via Raman, infrared, and UV–vis spectroscopy combined with powder X-ray Diffraction. The absence of structural phase transitions as well as the abrupt shifts of bandgap values together with characteristic Raman and IR peaks within 0-9 GPa suggests that the Py-FeCl 4 multicoloring switching behavior is driven by an electron transfer between the inorganic FeCl 4 – anion and the organic pyrylium cation. The obtained results demonstrate that Py-FeCl 4 dye is a good candidate for developing high-pressure sensing technologies designed to function in extreme environments. Moreover, due to the inherent role of molecular-structure relationships in the pyrylium salt's photophysical properties, findings suggest the potential discovery of piezochromic behavior in other pyrylium compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Flexible dynamic boundary microgrid operation considering network and load unbalances

Flexible microgrids with dynamic boundaries have recently been introduced in the literature. With the ability to reconfigure the topology of the microgrids dynamically through remotely controlled switches, flexible microgrids with dynamic boundaries can further improve the resiliency and energy efficiency of microgrids with distributed energy resources (DERs). This paper focuses on the optimal operation considering one of the predominant characteristics of microgrids and distribution systems – unbalanced networks and loads. In existing literature, balanced modeling of microgrids is more common due to its attractive simplicity. The three-phase power unbalance has not been considered as a constraint on the generation units in a microgrid. Further, negative sequence constraints have also been neglected. In this article, we propose a set of constraints that is specifically related to the capabilities of inverter interfaced resources to supply unbalanced current/power when the microgrid is islanded from the main distribution grid. We incorporate the new set of constraints into two optimization formulations leveraging two convex relaxations of the three-phase power flow equations: mixed-integer linear programming (MILP) and mixed-integer semidefinite programming (MISDP) that optimize the dispatch of controllable switches and DERs in the microgrid. The algorithms are then extended to networked microgrids with grid-forming sources. We test the algorithms on a realistic community microgrid model in Puerto Rico as well as standardized IEEE distribution test feeders. The testing results demonstrate the performance of the proposed algorithms. The MILP is fast and scalable, and the MISDP enforces the negative sequence voltage constraints.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Futures for electrochromic windows on high performance houses in arid, cold climates

This study investigates high performance electrochromic windows used on a passive house and residential dwelling to IECC 2021 (i.e., IECC dwelling). In the lab, the electrochromic film switches transmitted solar heat gain coefficient (SHGC) from 0.09 to 0.7 and visible transmittance from 0.15 to 0.82 with power consumption of 1.23 W/m 2 during switching times less than 3 minutes. We extrapolate these results to a window assembly. Building energy models of the houses were evaluated in Santa Fe, New Mexico. A Monte Carlo analysis for 2020, 2040, 2060, and 2080 was conducted for Shared Socioeconomic Pathways 2-4.5, 3-7.0, and 5-8.5. Cases with and without the electrochromic windows and with and without electricity were used to determine energy use intensity and hours beyond thermal safety thresholds. The passive house showed 1.3-3.1% mean energy savings and the IECC dwelling 4.4-5.1% with electrochromic efficiency benefits growing into the future for both cases. Even so, overall savings decrease into the future for the passive house, due to growth in cooling load being dominant, conversely overall energy savings increase into the future for the IECC dwelling due to heating loads being dominant. For thermal resilience, the passive house exhibited a mean percent decrease of 0.02-0.31% hours in the extreme caution (i.e., > 32.2 °C, ≤ 39.4 °C) range while the IECC dwelling exhibited 0.38-4.38%. The study therefore shows that electrochromic windows will have smaller benefits for the passive house in comparison to the IECC dwelling. The relationship between electrochromic windows is shown to have a complex relationship between house efficiency and climate change by these results.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

Multiparametric AFM Insights into Electron Transport Mechanisms in Biomemristors

Biomemristors have attracted significant attention due to their applications in biodegradable and flexible electronic devices, and their prospective functions in information storage, neural synapses, and neuromorphic computation. Hence, understanding biomaterials' resistive switching (RS) mechanism is essential to design novel biomemristors with enhanced performance. In the last decade, various atomic force microscopy (AFM) modes, such as Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (cAFM), in situ/operando visualize the electron transport behaviors within biomemristors at the nanoscale. This review provides a comprehensive discussion of multiparametric AFM techniques to characterize biomemristors and inspire new ideas in developing next-generation consumer electronics. We also summarize the progress of revealing the internal mechanism of biomemristors with functional AFM to visualize and understand the switching behavior. Finally, the opportunities and challenges of further utilizing multiparametric AFM to explore the electron transport mechanisms in biomemristors are presented.

Shi, Chenyang↗
DOE OSTI2025

Design of an 8-channel 40 GS/s 20 mW/Ch waveform sampling ASIC in 65 nm CMOS

One picosecond timing resolution is the entry point to signature based searches relying on secondary/tertiary vertices and particle identification. We describe PSEC5, an 8-channel 40 GS/s waveform-sampling ASIC in TSMC 65 nm process targetting one picosecond resolution at 20 mW power per channel. Each channel consists of four fast and one slow switched capacitor arrays (SCA), allowing for picosecond time resolution combined with a long effective buffer. Each fast SCA is 1.6 ns long and has a nominal sampling rate of 40 GS/s. The slow SCA is 204.8 ns long and samples at 5 GS/s. Recording of the analog data for each channel is triggered by a fast discriminator capable of multiple triggering during the window of the slow SCA. To achieve a large dynamic range, low leakage, and high bandwidth, the SCA sampling switches are implemented as 2.5 V nMOSFETs controlled by 1.2 V shift registers. Stored analog data are digitized by an external ADC at 10 bits or better. Specifications on operational parameters include a 4 GHz analog bandwidth and a dead time of 20 microseconds, corresponding to a 50 kHz readout rate, determined by the choice of the external ADC. PSEC5 has been submitted for fabrication.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Polarization-Controlled Structural Modulation in the Single Atomic Layer at the PbZr 0.2 Ti 0.8 O 3 /LaNiO 3 Interface

Conductivity modulation via ferroelectric polarization coupling with LaNiO 3 (LNO) is demonstrated at an epitaxial ferroelectric–LNO interface. Conductivity measurements, varying the thickness of the LNO channel, show that this phenomenon is confined to a few atomic layers at the interface. Combining in situ biasing and off-axis holography, we mapped out electrostatic potentials at the PbZr 0.2 Ti 0.8 O 3 (PZT)/LNO/SrTiO 3 (STO) heterostructure upon polarization switching. Using aberration-corrected STEM, the interfacial atomic structures were investigated for the two different PZT polarization states. Polarization in PZT induces a significant change in the in-plane O–Ni–O bond angles, with a 37° modulation in the topmost 1 or 2 LNO unit cells, driven by strain in the oxygen sublattice for the two opposite polarization directions in PZT. Both oxygen and cation sublattices exhibit strain responses exceeding 10% upon switching. This atomic-layer structural modulation highlights a mechanism for functional oxide heterostructure development, offering pathways for advancements in nonvolatile memory, sensors, and energy-efficient transistors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Flux-Closure Domain Structures in Ferroelectric K 0.5 Na 0.5 NbO 3 Thin Films

Topological domain structures in ferroelectric materials have garnered increasing attention due to their intriguing physical properties and promising applications. While most existing topological structures in ferroelectric perovskite oxides originate from tetragonal or rhombohedral bulk phases, much less is understood about their counterparts in orthorhombic ferroelectrics. Here, in this work, we employ ferroelectric K 0.5 Na 0.5 NbO 3 (KNN) thin films as a model system and leverage phase-field simulations to theoretically predict the static structures and dynamic behaviors of three types of flux-closure domain configurations: in-plane (Type-I), out-of-plane (Type-II), and superdomain (Type-III) flux-closure structures. We systematically investigate the effects of finite size, misfit strains, and electrical boundary conditions on the formation and switching of these topological structures. For the Type-I structure, size reduction or small misfit strain facilitates a transition of the flux-closure pattern to polar vortices. Type-II structures emerge under open-circuit electrical boundary conditions of the film, forming at the junctions of specific domain walls with the film surface or the film–substrate interface. The formation mechanisms of these two flux-closure structures are rationalized from an energy perspective. We demonstrated switching capabilities of Type-II and Type-III structures by obtaining polarization–electric field hysteresis loops. Our simulations also reveal a reversible electric-field-induced transition between the orthorhombic and rhombohedral ferroelectric phases with a checkerboard domain pattern, during which the integrity of the flux-closure structure is preserved. These findings provide theoretical insights and practical guidance for identifying and manipulating topological structures in low-symmetry ferroelectrics, paving the way for developing energy-efficient microelectronic devices based on topological structures.

P-E loop↗
DOE OSTI2025

Diastereoselectivity Controlled by the Hydrogenation Mechanisms during the Electrochemical Reduction of a Carbonyl Group

Stereocontrol is of critical importance in organic synthesis. In this study, we demonstrate how heterogeneous electrochemical hydrogenation enables diastereocontrol simply by tuning electrochemical hydrogenation mechanisms without altering the adsorption conformation of a reactant on the electrode. We use 4-hydroxy-1-tetralone (4-OH-tetralone) as a model reactant, where diastereomers can be produced during the hydrogenation of the carbonyl group. In traditional thermocatalytic hydrogenation, H 2 first dissociates on the catalyst surface to form surface-adsorbed hydrogen (H*), and therefore, H* is always added to the organic reactant from the catalyst side via hydrogen atom transfer (HAT). Thus, in order to flip the diastereoselectivity, the adsorbed reactant itself must be physically flipped. In contrast, electrochemical hydrogenation can occur either via HAT, where H is added from the electrode surface, or via proton-coupled electron transfer (PCET), where H is added from the solution side of the adsorbed reactant. Thus, without changing the adsorption conformation of the reactant, opposite diastereomers can be obtained by switching the hydrogenation mechanism (HAT vs PCET). In this work, using a combination of experimental and computational studies, we demonstrate two examples of flipping diastereoselectivity by different electrochemical hydrogenation mechanisms. In the first case, we achieve opposite diastereoselectivities using metals that adopt different hydrogenation mechanisms (HAT vs PCET). In the second case, we flip the diastereoselectivity by varying the applied potential, which switches one hydrogenation mechanism to the other on the same metal electrode. In each case, our results offer an atomic-level understanding of the preferred hydrogenation mechanism that enables the corresponding diastereoselectivity.

adsorption↗
DOE OSTI2026

Heteroepitaxial control of thickness, strain, and domain architecture in few-layer ferroelectric tin monochalcogenides

Thin-film epitaxy and epitaxial strain have been widely exploited to tune domain configurations, switching behavior, and ferroic properties in conventional three-dimensional ferroelectric thin films; however, its application to controlling the properties of two-dimensional (2D) ferroelectrics has remained largely unexplored. Here, using SnX (X = Se, S) as a model system, we demonstrate heteroepitaxial control of thickness, strain state, and domain architecture in few-layer ferroelectric SnX via growth on monolayer MoS2 van der Waals (vdW) templates. Compared with conventional growth, MoS2-templated heteroepitaxy promotes epitaxial alignment, yielding ultrathin SnSe films with improved crystalline quality, full areal coverage, and enlarged lateral dimensions. Strong interfacial epitaxial coupling induces pronounced in-plane strain and stabilizes a hierarchical ferroelastic domain architecture, in which long-range 90° stripe domains are further subdivided into nanoscale rotational variants, as revealed by scanning transmission electron microscopy and synchrotron X-ray microscopy. Piezoresponse force microscopy and second-harmonic polarimetry confirm robust in-plane polarization, while ferroelectricity in SnSe is established through polarization-electric field hysteresis and nonvolatile ferroelectric resistive switching with on/off ratios approaching 1000. A nonvolatile, switchable ferroelectric diode effect further evidences direct coupling between polarization and charge transport. Notably, ferroelectric switchability exhibits a strong thickness dependence and is preserved only below ∼10 layers. This vdW heteroepitaxial strategy is further extended to ferroelectric SnS. The seamless heteroepitaxial integration of 2D ferroelectrics with CMOS-compatible, wafer-scale MoS2 templates provides a general and scalable route for strain-enabled structural and ferroelectric engineering in emerging memory and low-power optoelectronic applications.

Wang, Yueyin↗
DOE OSTI2025

Anti-Pdc1p Nanobody as a Genetically Encoded Inhibitor of Ethanol Production Enables Dual Transcriptional and Post-translational Controls of Yeast Fermentations

Microbial fermentation provides a sustainable method of producing valuable chemicals. Adding dynamic control to fermentations can significantly improve titers, but most systems rely on transcriptional controls of metabolic enzymes, leaving existing intracellular enzymes unregulated. This limits the ability of transcriptional controls to switch off metabolic pathways, especially when metabolic enzymes have long half-lives. We developed a two-layer transcriptional/post-translational control system for yeast fermentations. Specifically, the system uses blue light to transcriptionally activate the major pyruvate decarboxylase PDC1, required for cell growth and concomitant ethanol production. Switching to darkness transcriptionally inactivates PDC1 and instead activates the anti-Pdc1p nanobody, NbJRI, to act as a genetically encoded inhibitor of Pdc1p accumulated during the growth phase. This dual transcriptional/post-translational control improves the production of 2,3-BDO and citramalate by up to 100 and 92% compared to using transcriptional controls alone in dynamic two-phase fermentations. Furthermore, this study establishes the NbJRI nanobody as an effective genetically encoded inhibitor of Pdc1p that can enhance the production of pyruvate-derived chemicals.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2024

Tunneling current-controlled spin states in few-layer van der Waals magnets

Abstract Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI 3 . We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI 3 , depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI 3 layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI 3 tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing.

Science & Technology - Other Topics↗
DOE OSTI2024

Reversible two-way tuning of thermal conductivity in an end-linked star-shaped thermoset

Polymeric thermal switches that can reversibly tune and significantly enhance their thermal conductivities are desirable for diverse applications in electronics, aerospace, automotives, and medicine; however, they are rarely achieved. Here, we report a polymer-based thermal switch consisting of an end-linked star-shaped thermoset with two independent thermal conductivity tuning mechanisms—strain and temperature modulation—that rapidly, reversibly, and cyclically modulate thermal conductivity. The end-linked star-shaped thermoset exhibits a strain-modulated thermal conductivity enhancement up to 11.5 at a fixed temperature of 60 °C (increasing from 0.15 to 2.1 W m –1 K –1 ). Additionally, it demonstrates a temperature-modulated thermal conductivity tuning ratio up to 2.3 at a fixed stretch of 2.5 (increasing from 0.17 to 0.39 W m –1 K –1 ). When combined, these two effects collectively enable the end-linked star-shaped thermoset to achieve a thermal conductivity tuning ratio up to 14.2. Moreover, the end-linked star-shaped thermoset demonstrates reversible tuning for over 1000 cycles. The reversible two-way tuning of thermal conductivity is attributed to the synergy of aligned amorphous chains, oriented crystalline domains, and increased crystallinity by elastically deforming the end-linked star-shaped thermoset.

42 ENGINEERING↗
DOE OSTI2025

Reversible long-range domain wall motion in an improper ferroelectric

Reversible ferroelectric domain wall movements beyond the 10 nm range associated with Rayleigh behavior are usually restricted to specific defect-engineered systems. Here, we demonstrate that such long-range movements naturally occur in the improper ferroelectric ErMnO 3 during electric-field-cycling. We study the electric-field-driven motion of domain walls, showing that they readily return to their initial position after having traveled distances exceeding 250 nm. By applying switching spectroscopy band-excitation piezoresponse force microscopy, we track the domain wall movement with nanometric spatial precision and analyze the local switching behavior. Phase field simulations show that the reversible long-range motion is intrinsic to the hexagonal manganites, linking it to their improper ferroelectricity and topologically protected structural vortex lines, which serve as anchor point for the ferroelectric domain walls. Our results give new insight into the local dynamics of domain walls in improper ferroelectrics and demonstrate the possibility to reversibly displace domain walls over much larger distances than commonly expected for ferroelectric systems in their pristine state, ensuring predictable device behavior for applications such as tunable capacitors or sensors.

Zahn, Manuel [Norwegian Univ. of Science and Techn↗