Search NASA⌕ Search

SEARCH · Search NASA

Results for “Silicon Solar Cells”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗
DOE OSTI2025

Strain engineering of doped hydrogen passivated silicon quantum dots

Silicon quantum dots are nanomaterials that are attractive candidates for photovoltaic applications. Doping of these materials creates p-n junctions and is important for solar cells. In this work, we present a first-principles study of the coupled influence of doping and strain on the stability, energy gap, Fermi level, electronic density, and density of states of hydrogen-passivated silicon quantum dots. We find that the cohesive energy and the energy gap decrease with increasing quantum dot size and are strongly influenced by strain. Furthermore, the response to strain also depends on the size of the quantum dot and dopant type. We present expressions of cohesive energy and energy gap as power-law of size and polynomial dependence on strain. We also show that the Fermi energy increases with size for pristine and p-type doping but decreases with size for n-type doping. We also discuss the influence of strain and dopant type on the density of states and electron density of the quantum dots.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Cadmium Telluride Solar Cells: From Fundamental Science to Commercial Applications

In order to meet aggressive decarbonization goals, photovoltacs (PV) need to expand substantially. The current technology that heavily dominates the market, silicon (Si), comprises 95% of the world's PV production, is energy intensive to make, and can take up a substantial portion of the remaining carbon budget if expanded. Conversely, cadmium telluride (CdTe) comprises much of the remaining 5% of the global PV market and has a significantly lower carbon footprint than Si, historically costs less to produce, and is critically important to U.S. competitiveness in the global market. Importantly, CdTe still has room to grow, particularly related to efficiency because voltage has historically been much lower than what we calculate it should be. My research is focused in part on understanding this voltage deficit from a fundamental perspective by studying bulk materials and interfaces. One of the most important regions of the device is buried within the stack, so I developed a technique to cleave and reveal buried interfaces. This cleave technique has enabled a much better scientific understanding and allows us to make lightweight, flexible PV while maintaining low costs, high efficiency, and high throughput associated with standard module processing.

CdTe↗
DOE OSTI2021

Local Resistance Measurement for Degradation of c-Si Heterojunction with Intrinsic Thin Layer (HIT) Solar Modules

Silicon heterojunction with intrinsic thin layer (or HIT) modules typically degrade at a rate of less than 1% annually in solar fields with dominant degradation in open-circuit voltage and some degradation in series resistance. However, detailed mechanisms can differ from module to module. Here, we study increases in local series resistance that occur over long-term field deployment, indicated by cell areas where the photoluminescence intensity does not degrade but the electroluminescence degrades significantly. To directly measure the local series resistance, we have cored out the local electroluminescence-degraded area, and we measured the sheet resistance by 4-point-probe and local nm-scale resistance using scanning spreading resistance microscopy (SSRM). The results by 4-point-probe show scattered sheet resistance that can be caused, for example, by nonuniform current paths through the transparent conductive oxide layer, the a-Si:H emitter, or the near-junction c-Si inversion layer. In contrast, the SSRM results indicate a relatively uniform and non-degraded resistivity on smaller nanometer spatial scales. SSRM is an atomic force microscopy-based two-terminal resistance mapping technique that measures the local resistance in nm-volume beneath the probe. The consistent resistances measured on the control and degraded samples can exclude the degradation of transparent conductive oxide resistance.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Spectral Effects in Albedo and Rearside Irradiance Measurement for Bifacial Performance Estimation

We investigate the impact of spectral dependence of ground surface reflectivity on albedo and rearside irradiance measurements necessary for bifacial photovoltaic (PV) module performance estimation and monitoring. Because PV modules are spectrally selective, albedo and irradiance measurements performed with common irradiance sensors may require spectral mismatch corrections when used for performance prediction. We investigate via simulation the differences in spectrally responsive albedo measured with thermopile pyranometers and crystalline silicon PV reference cells in comparison to a typical crystalline-silicon bifacial PV module. Simulations are performed for nine different representative ground surface materials using simulated solar spectra together with spectral reflectivity data distributed with the SMARTS simulation software. For the materials considered, the results show that albedo spectral mismatch relative to the bifacial module is distributed over a range of ±9.2% for thermopile pyranometers versus only ±3.7% for a typical PV reference cell. We consider the impact of this spectrally-responsive albedo mismatch on bifacial PV module rearside irradiance measurements. Using synthesized rearside spectral irradiance distributions, we find that for the nine different ground surface materials the predicted rearside irradiance measurement deviates from the effective irradiance observed by the PV module by on the order of 16.5 W/m 2 for the pyranometer and 3.6 W/m 2 for the PV reference cell. We discuss the implications for bifacial albedo and irradiance measurement.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Benchmarks of Global Clean Energy Manufacturing, 2014-2016

Benchmarks of Global Clean Energy Manufacturing provides an assessment of the global state of clean energy manufacturing over 3 years from 2014 to 2016. Four technologies were examined - wind turbine components (blade, tower, nacelle), crystalline silicon (c-Si) solar photovoltaic (PV) modules, light-duty vehicle (LDV) lithium-ion battery (LIB) cells, and light-emitting diode (LED) packages for lighting and other consumer products. The analysis looked along each technology's manufacturing supply chain, including processing raw materials, producing required subcomponents, and assembling final products. Manufacturing supply chains were evaluated across 13 economies that are the primary manufacturing hubs for these technologies. This Highlights summary report features key findings across the manufacturing supply chains.

42 ENGINEERING↗
DOE OSTI2022

Hotspot testing of glass/backsheet and glass/glass PV modules pre-stressed in extended thermal cycling

This paper investigates the effect of hotspot (HS) stress endurance of two of the latest designs of monocrystalline modules: a half-cell glass/backsheet (G/B) module and a full-cell glass/glass (G/G) module. These modules have already been pre-stressed in extended thermal cycling with 600 cycles per the IEC 61215 standard to represent field-stressed modules. This study differs from the other conventional studies wherein only fresh modules are subjected to hotspot endurance stress. The G/G module reached a maximum temperature of approximately 200 °C at a cell shading of 25 %, 55 °C higher than the maximum hotspot temperature of 145 °C in the G/B module. A significant burn mark, without glass shattering, was observed in the hotspot-stressed cell of the G/G module due to the current mismatch induced by partial shading. Most of the cells in the G/G module appear to be severely damaged (severe dark areas), as observed in the electroluminescence (EL) image, while the dark regions were rarely present in the G/B module. The EL image also illustrates multiple cell cracks that resist current flow and eventually contribute to the full-cell module degradation. About 8.3 % degradation in maximum power was observed for the G/G module and 1.3 % for the G/B module after the sequential stress tests. The lower degradation in the G/B module can potentially be attributed to its design, which comprises of two parallel strings, each having 72-half-cells and benefits from lower heat dissipation. Furthermore, this indicates that the half-cell design could potentially minimize the hotspot degradation and failures in crystalline-silicon modules.

14 SOLAR ENERGY↗
DOE OSTI2023

Residual Stresses Affect Cell Fragment Movement

Predictive modeling tools such as the finite element method can be of tremendous help in assessing the reliability and long-term performance of photovoltaic modules. In order to obtain accurate results, the proper modeling of materials and manufacturing processes are of utmost importance. Module fabrication introduces thermo-mechanical stresses inside the module laminate, which need to be accounted for as residual stresses in finite element simulations. We found that cell fragment movement and crack opening displacements of fractured silicon cells within modules are affected by those residual stresses. Cell cracking remains a challenging topic in assessing the reliability and durability of damaged modules. Hence, accurately quantifying the separation and movement between cell fragments creates the foundation for establishing reliable lifetime and performance assessments of fractured silicon modules. Here, we present a modeling approach that uses upper and lower bounds to accurately account for the residual stresses introduced by the module lamination process. We designed a four-point flexure coupon test of a laminated, fractured silicon strip to validate our numerical results and found good agreement between our modeling methodology and the experimental data. Finally, we discuss the implications of the residual stresses on the normal crack opening and metallization wear-out of fractured silicon cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Spectral Effects in Albedo and Rearside Irradiance Measurment for Bifacial Performance Estimation: Preprint

Albedo data are essential for accurate prediction of bifacial PV module performance. However, spectral response mismatch between PV modules and irradiance sensors used in albedometers can limit the accuracy of performance predictions. In order to provide quantitative assessment of this effect, we investigate via simulation the differences in spectrally responsive albedo measured with thermopile pyranometers and crystallinesilicon PV reference cells in comparison to a representative crystalline-silicon bifacial PV module for nine different representative ground surface materials. Calculations are performed using simulated solar spectra together with catalogued spectral reflectivity data distributed with the SMARTS simulation software. For the specific materials considered, the results show that albedo measurement using thermopile pyranometers could over or under-estimate the ground-reflected radiation usable by a bifacial PV module by up to 10%, versus only approximately 4% total range of variation for a PV reference cell.

Albedo↗
DOE OSTI2020

Thermal compensation of molded silicone optics

Optical grade silicone has various properties that make it attractive for solar concentrators, such as excellent transmission across the solar spectrum and flexible moldability for freeform profiles. In this study, a glass–silicone lens structure is proposed to reduce the optothermal effect on the silicone lens. Experimental measurements and simulation modeling results demonstrate that the focal length sensitivity of the glass–silicone lens with respect to temperature can be reduced by a factor of 10 when compared to a silicone lens alone. This model has been extended to the simulation of a proposed two-stage silicone solar concentrator, consisting of an array of acylindrical lenslets and rows of waveguides that focus light onto microphotovoltaic cells. The optical efficiency of the solar concentration system showed a change of less than 10% compared to the efficiency at room temperature for temperature changes from − <#comment/> 10 ∘ <#comment/> C to 70°C.

Lyons, Nicholas P.↗
DOE OSTI2021

Distribution of the Spectral Response of Cells in Silicon Modules - Mechanisms and Implications

Measurements of the spectral response of cells in a PV module can provide important insight into the physics of the device and are also needed for the accurate calibration of the performance of these devices using solar simulators. While techniques for measuring the spectral response of PV cells are well established, measurement of the spectral response of all cells in a module is not straightforward since in this case one has electrical access to a string of cells and not to cells individually. Here we present a new approach for testing the spectral response of individual cells in silicon modules that allows for the fast mapping of the response at different locations of the module. We show that in some cases the spectral response of different cells in a module can vary considerably and propose an underlying mechanism for this variation. We also discuss the implications of this observation for the uncertainty of the spectral correction and of the I SC calibration using a solar simulator.

modules↗
DOE OSTI2023

Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells

This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H 2 S) gas phase reaction and capped by a hydrogenated amorphous silicon nitride (a-SiN x :H) layer. The sulfur passivation on a symmetrically n + diffused emitter is shown to lead to an emitter saturation current density (J 0n+ ) of 30 fA/cm 2 at R sheet,n+ ≈ 100 Ω/sq. The application of S-passivation to the emitter surface in the PERC cell structure, with the rear surface passivated by an aluminum oxide (Al 2 O 3 )/a-SiN x :H stack, showed a promising implied open-circuit voltage (iV OC ) of 686 mV before metallization. This iV OC was higher than that for the a-SiN x :H or SiO 2 /a-SiN x :H passivated emitter surfaces (675 and 674 mV, respectively) on PERC cells processed in the same run. However, a significant drop in cell V OC is observed for the S-passivated PERC cell after the completion of device fabrication with laser patterning, screen-printed metal contact deposition, and firing. Nonetheless, an efficiency of ~20% and a V OC of ~650 mV was achieved with an emitter surface passivated by sulfur. We identified that the 760°C contact firing process degrades the S-passivation quality. Furthermore, the surface morphology was studied, and a detailed surface analysis was performed to study the causes of the S-passivated surface degradation.

14 SOLAR ENERGY↗
DOE OSTI2020

Destructive reverse bias pinning in perovskite/silicon tandem solar modules caused by perovskite hysteresis under dynamic shading

In this work, we demonstrate how perovskite hysteresis can result in permanent reductions in power output in perovskite/silicon tandem modules—including irreversible hotspot-induced damage—from only brief periods of shading. We show that reverse bias events in which a perovskite cell is biased above a threshold voltage—which in this work we find to be as low as –1.1 V—produces a temporary reduction in power output that is of sufficient magnitude to keep the cell pinned in reverse bias after the shading event ends. As a hysteretic phenomena, this crucial failure mode may be overlooked by static models of perovskite-based solar cells. Higher reverse bias voltages exacerbate the temporary reduction in short-circuit photocurrent, which is also sensitive to the level of illumination under reverse bias. Numerical device modelling demonstrates that this effect is consistent with our understanding of perovskite hysteresis as a consequence of mobile ion-electron coupling controlling rates of non-radiative recombination over time. Measurements of the dynamic response of single-junction perovskite cells are extrapolated to two-terminal and four-terminal perovskite/silicon tandem module modelling. We validate these models with measurements from an equivalent electronic circuit that represents a two-terminal perovskite–silicon tandem mini module. Two module-level solutions are discussed that address this issue, which includes increasing the number of bypass diodes and choosing better suited silicon bottom cells with higher shunter resistance in two-terminal tandem modules.

14 SOLAR ENERGY↗
DOE OSTI2024

Photon management in silicon photovoltaic cells: A critical review

With the practical efficiency of the silicon photovoltaic (PV) cell approaching its theoretical limit, pushing conversion efficiencies even higher now relies on reducing every type of power loss that can occur within the device. Limiting optical losses is therefore critical and requires effective management of incident photons in terms of how they interact with the device. Ultimately, photon management within a PV cell means engineering the device and constituent materials to maximize photon absorption within the active semiconductor and therefore reduce the number of photons lost through other means, most notably reflection and parasitic absorption. There have been great advancements in the front and the rear side photon management techniques in recent years. This review aims to discuss these advancements and compare the various approaches, not only in terms of increases in photogenerated current, but also their compatibility with different PV cell architectures and potential trade-offs, like increased surface recombination or scalability for high-volume manufacturing. In this review, a comprehensive discussion of a wide variety of the front and the rear side photon management structures are presented with suggestions to improve the already achieved performance further. Here, this review is unique because it not only presents the recent development in photon management techniques, but also offers through analysis of these techniques and pathways to improve further.

14 SOLAR ENERGY↗
DOE OSTI2023

Platinum group metal-free (PGM-free) integrated tandem junction photoelectrochemical (PEC) water splitting devices (Final Technical Report)

This project involves using solar light, a photoabsorber, and a catalyst to split water and produce hydrogen. The Department of Energy (DOE) targets for integrated photoelectrochemical (PEC) cells emphasize cost (electrode cost < $200/m 2 ), performance (> 15% solar to hydrogen (STH) efficiency), and stability (> 6 months electrode lifetime), but most approaches skew toward one specific metric. This project exploited interfacial integration of platinum group metal-free (PGM-free) catalysts on the high performance and high value tandem solar cells to attain or exceed the DOE benchmark STH energy conversion efficiency and durability. This was investigated in two thrusts by developing two PEC devices for direct comparison: the first is a high-performance monolithic device based on state-of-the-art GaInP 2 /GaAs tandem solar cells developed at National Renewable Energy Laboratory (NREL), and the second is a high-value device based on earth-abundant wide band gap photoabsorber materials including oxynitride and hybrid organic-inorganic perovskite (HOIP) coupled with commercial narrow band gap silicon (Si). Both these devices were paired with electrocatalysts developed for this purpose at Rutgers University by adapting them to thin films on the photoabsorbers. These catalysts are based on the hydrogen evolution reaction (HER) catalysts (Ni 5 P 4 ), oxygen evolution reaction (OER) catalysts (LiCo 2 O 4 ) previously developed at Rutgers for high-efficiency electrolyzers. For using the high-performance tandem solar cell and Ni 5 P 4 catalysts, we achieved a durability of > 200 h at a STH efficiency of > 10%. For using the high-value wide band gap single junction solar cells on n + Si, we achieved 0.73 mA/cm 2 at 1.23V vs reversible hydrogen electrode (RHE) and -15.9 mA/cm 2 at 0V vs RHE using the oxynitride- and HOIP-based photoelectrodes, respectively. After comparing their photocurrent densities, we down selected the HOIP photoabsorber to couple Si for fabrication of a tandem photocathode. However, due to the COVID-19 pandemic, both the laboratories at Rutgers and NREL were locked down for three months and reopened only partially in 2020. The HOIP/Si tandem photocathode using robust nickel phosphide thin film catalysts cannot be developed within the project period, which is expected to achieve a STH efficiency of > 20%. Also, the low-cost LiCo 2 O 4 OER catalysts need to replace the benchmark IrO 2 for evaluation. Finally, techonomic analysis of full high-performance and high-value integrated PEC devices needs to be carried out for comparison in terms of cost.

08 HYDROGEN↗
DOE OSTI2022

Solar Photovoltaics: Supply Chain Deep Dive Assessment

This is one of a series of reports and deep dive assessments produced in response to Executive Order 14017 “America’s Supply Chains,” which directs the Secretary of Energy to submit a report on supply chains for the energy sector industrial base. The Executive Order is helping the federal government to build more secure and diverse U.S. supply chains, including energy supply chains. Over the past decade, solar power has gone from an emerging, niche technology to a mature energy industry. By 2035, solar power could supply 40% or more of U.S. electricity demand, dramatically accelerating the decarbonization of buildings, transportation, and industry; and, if current technology trends continue, it could do so without increasing the price of electricity. The rapid expansion of solar energy has the potential to yield broad benefits in the form of economic activity and workforce development. The solar industry already employs roughly 230,000 people in the United States, at an average wage that is higher than the national average for most comparable positions. By decarbonizing the electricity sector by 2035, the U.S. solar industry could employ 500,000–1,500,000 people by 2030. The components that are assembled to install a photovoltaic power system are produced by a global supply chain. Photovoltaic (PV) modules (also called panels) are made of cells that use a variety of technologies. There are two leading types of solar modules used in the United States, with crystalline silicon (c-Si) modules representing 84% of the market and cadmium telluride (CdTe) modules representing 16% of the market. Modules of either type require mounting structures to provide mechanical support (racking), which may be configured to follow the sun (tracking). The output of any PV module is direct current (dc), which is almost always converted to alternating current (ac) by an inverter.

14 SOLAR ENERGY↗
DOE OSTI2021

Relaxed Current Matching Requirements in Highly Luminescent Perovskite Tandem Solar Cells and Their Fundamental Efficiency Limits

Perovskite-based tandem solar cells are of increasing interest as they approach commercialization. Here we use experimental parameters from optical spectroscopy measurements to calculate the limiting efficiency of perovskite–silicon and all-perovskite two-terminal tandems, employing currently available bandgap materials, as 42.0% and 40.8%, respectively. We show luminescence coupling between subcells (the optical transfer of photons from the high-bandgap to low-bandgap subcell) relaxes current matching when the high-bandgap subcell is a luminescent perovskite. We calculate that luminescence coupling becomes important at charge trapping rates (=10 6 s -1 ) already being achieved in relevant halide perovskites. Luminescence coupling increases flexibility in subcell thicknesses and tolerance to different spectral conditions. For maximal benefit, the high-bandgap subcell should have the higher short-circuit current under average spectral conditions. This can be achieved by reducing the bandgap of the high-bandgap subcell, allowing wider, unstable bandgap compositions to be avoided. Lastly, we visualize luminescence coupling in an all-perovskite tandem through cross-section luminescence imaging.

14 SOLAR ENERGY↗