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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Optimization of multi-layer front-contact grid patterns for solar cells

In a front-contact grid pattern for a solar cell there is a trade-off necessary between shadowing loss and excessive power loss due to voltage drop in the metalization itself. If the metalization is too little there may be excessive contact resistance to the underlying semiconductor and insufficient coverage to control losses in the thin front-surface layer of the solar cell. Optimization of grid pattern area and geometry is considered analytically to minimize total losses. Worthwhile performance advantages are shown to be possible, particularly in concentrator systems, if multi-layer grid patterns are used. The current carrying fingers should be approximately square in metal cross section and the main current feedout bars should not only be wider but also thicker than the primary collecting fingers. This is termed multi-level metalization. Effective use of multi-level grid metalization allows much greater concentration-to-loss ratio for a cell of large area and permits good performance from cells of high front-layer sheet resistance.

Flat, A.↗
NASA NTRS1985

Heavy doping effects in high efficiency silicon solar cells

The use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells was examined. The results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contact are presented. A reciprocity theorem is presented that relates the short circuit current of a device, induced by a carrier generation source, to the minority carrier Fermi level in the dark. A method for accurate measurement of minority-carrier diffusion coefficients in silicon is described.

Lindholm, F. A.↗
NASA NTRS2010

Micrometeoroid Impacts and Optical Scatter in Space Environment

This paper discusses the results of an attempt to use laboratory test data and empirically derived models to quantify the degree of surface damage and associated light scattering that might be expected from hypervelocity particle impacts in space environment. Published descriptions of the interplanetary dust environment were used as the sources of particle mass, size, and velocity estimates. Micrometeoroid sizes are predicted to be predominantly in the mass range 10(exp -5) g or less, with most having diameters near 1 micrometer, but some larger than I20 micrometers, with velocities near 20 kilometers per second. In a laboratory test, latex ( p = 1.1. grams per cubic centimeter) and iron (7.9 grams per cubic centimeter) particles with diameters ranging from 0.75 micrometers to 1.60 micrometers and with velocities ranging from 2.0 kilometers per second to 18.5 kilometers per second, were shot at a Be substrate mirror that had a dielectric coated gold reflecting surface. Scanning electron and atomic force microscopy were used to measure crater dimensions that were then associated with particle impact energies. These data were then fitted to empirical models derived from solar cell and other spacecraft surface components returned from orbit, as well as studies of impact craters studied on glassy materials returned from the lunar surface, to establish a link between particle energy and impact crater dimension. From these data, an estimate of total expected damaged area was computed and this result produced an estimate of expected surface scatter from the modeled environment.

Heaney, James B.↗
NASA NTRS1979

Study of the Effects of Impurities on the Properties of Silicon Materials and Performance of Silicon Solar Cell

Numerical solutions were obtained from the exact one dimensional transmission line circuit model to study the following effects on the terrestrial performance of silicon solar cells: interband Auger recombination; surface recombination at the contact interfaces; enhanced metallic impurity solubility; diffusion profiles; and defect-impurity recombination centers. Thermal recombination parameters of titanium impurity in silicon were estimated from recent experimental data. Based on those parameters, computer model calculations showed that titanium concentration must be kept below 6x10 to the 12th power Ti/cu cm in order to achieve 16% AM1 efficiency in a silicon solar cell of 250 micrometers thick and 1.5 ohm-cm resistivity.

Sah, C. T.↗
NASA NTRS1991

Effect of InAlAs window layer on the efficiency of indium phosphide solar cells

Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide-bandgap lattice-matched indium aluminum arsenide (In0.52Al0.48As) window layer on the performance of InP solar cells was investigated using a numerical code PC-1D. The p(+)n InP solar cell performance improves significantly with the use of a window layer. No improvement is seen for n(+)p InP cells. Cell results are explained by the band diagram of the heterostructure and the conduction-band energy discontinuity. The calculated I-V and internal quantum efficiency results clearly demonstrate that In0.52Al0.48As is a promising candidate as a window layer material for p(+)n InP solar cells.

Jain, R. K.↗
NASA NTRS2000

Development of Electrostatically Clean Solar Array Panels

Certain missions require Electrostatically Clean Solar Array (ECSA) panels to establish a favorable environment for the operation of sensitive scientific instruments. The objective of this program was to demonstrate the feasibility of an ECSA panel that minimizes panel surface potential below 100mV in LEO and GEO charged particle environments, prevents exposure of solar cell voltage and panel insulating surfaces to the ambient environment, and provides an equipotential, grounded structure surrounding the entire panel. An ECSA panel design was developed that uses a Front Side Aperture-Shield (FSA) that covers all inter-cell areas with a single graphite composite laminate, composite edge clips for connecting the FSA to the panel substrate, and built-in tabs that interconnect the FSA to conductive coated coverglasses using a conductive adhesive. Analysis indicated the ability of the design to meet the ECSA requirements. Qualification coupons and a 0.5m x 0.5m prototype panel were fabricated and tested for photovoltaic performance and electrical grounding before and after exposure to acoustic and thermal cycling environments. The results show the feasibility of achieving electrostatic cleanliness with a small penalty in mass, photovoltaic performance and cost, with a design is structurally robust and compatible with a wide range of current solar panel technologies.

Stern, Theodore G.↗
DOE OSTI2020

On the hydrogenation of Poly-Si passivating contacts by Al 2 O 3 and SiN x thin films

Doped polycrystalline silicon (poly-Si), when coupled with a thin SiO 2 interlayer, is of large interest for crystalline silicon ( c -Si) solar cells due to its outstanding passivating contact properties. To reach high levels of surface passivation, it is pivotal to hydrogenate the poly-Si and the underlying c -Si/SiO 2 interface. This can be done by capping the poly-Si with a hydrogen-containing dielectric layer such as Al 2 O 3 or SiN x , followed by a thermal anneal. On the basis of recent research, this work addresses several aspects of such hydrogenation by dielectric materials, including the effect of the annealing ambient, the thermal stability and reversibility of hydrogenation, the poly-Si doping level and c -Si surface texture. Additionally, the implementation of hydrogenation of poly-Si by dielectric materials in solar cells is discussed.

14 SOLAR ENERGY↗
NASA NTRS2000

Sunspots and Giant-Cell Convection

From analysis of Doppler velocity images from SOHO/MDI, Hathaway et al (2000, Solar Phys., in press) have found clear evidence for giant convection cells that fill the solar surface, have diameters 3 - 10 times that typical of supergranules, and have lifetimes approx. greater than 10 days. Analogous to the superposition of the granular convection on the supergranular convection, the approx. 30,000 km diameter supergranules are superposed on these still larger giant cells. Because the giant cells make up the large-scale end of a continuous power spectrum that peaks at the size scale of supergranules, it appears that the giant cells are made by the same mode of convection as the supergranules. This suggests that the giant cells are similar to supergranules, just longer-lived, larger in diameter, and deeper. Here we point out that the range of lengths of large bipolar sunspot groups is similar to the size range of giant cells. This, along with the long lives (weeks) of large sunspots, suggests that large sunspots sit in long-lived, deep downflows at the corners of giant cells, and that the distance from leader to follower sunspots in large bipolar groups is the distance from one giant-cell corner to the next. By this line of reasoning, an unusually large and strong downdraft might pull in both legs of a rising spot-group magnetic flux loop, resulting in the formation of a delta sunspot. This leads us to suggest that a large, strong giant-cell corner downdraft should be present at the birthplaces of large delta sunspots for some time (days to weeks) before the birth. Thus, early detection of such downdrafts by local helioscismology might provide an early warning for the formation of those active regions (large delta sunspot groups) that produce the Sun's most violent flares and coronal mass ejections. This work is supported by NASA's Office of Space Science through the Solar Physics Branch of its Sun-Earth Connection Program.

Moore, Ron L.↗
NASA NTRS1992

Effect of InAlAs window layer on efficiency of indium phosphide solar cells

Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide bandgap, lattice-matched indium aluminum arsenide (In(0.52)Al(0.48)As) window layer on the performance of InP solar cells was investigated by using the numerical code PC-1D. The p(+)n InP solar cell performance improved significantly with the use of the window layer. No improvement was seen for the n(+)p InP cells. The cell results were explained by the band diagram of the heterostructure and the conduction band energy discontinuity. The calculated current voltage and internal quantum efficiency results clearly demonstrated that In(0.52)Al(0.48)As is a very promising candidate for a window layer material for p(+)n InP solar cells.

Jain, Raj K.↗
DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗
NASA NTRS1995

Correcting For Capacitance In Tests Of Solar Cells

Modified procedure for testing solar photovoltaic cells and modified software for processing test data provide corrections for effects of cell capacitance. Procedure and software needed because (a) some photovoltaic devices (for example, silicon solar cells with back-surface field region) store minority charge carriers in cell junction and thus exhibit significant capacitance, (b) capacitance affects current-vs.-voltage (I-V) measurements made when transient load connected to cell, and (c) transient load used in unmodified version of test procedure. Corrected I-V curve obtained in test of solar cell according to modified procedure approximates true cell voltage vs. cell current more closely.

Mueller, Robert L.↗
NASA NTRS1977

The sawtooth cover slide

A novel cover slide is reported which increases solar cell output by reducing the reflection of light from the cover slide surface and by redirecting incident light so that none falls on the collection grids of the cell. The new cover slide is fabricated with a sawtooth surface having a periodicity equal to that of the solar cell grids. This configuration refracts the light so that it is directed onto the semiconductor surface between the grid lines. Conventional grid patterns obstruct 7-10 percent of the light incident on the cell; at least half of this loss has been recovered by using the sawtooth cover slide. In addition, surface reflection from the conventional coated cover slide is suppressed by presenting a second surface to any light reflected at the first plane of contact. This double reflection results in a greater reduction of the reflection loss from the cover slide than does an antireflection coating on a flat surface.

Meulenberg, A., Jr.↗
DOE OSTI2022

Stability-limiting heterointerfaces of perovskite photovoltaics

Optoelectronic devices consist of heterointerfaces formed between dissimilar semiconducting materials. The relative energy level alignment between contacting semiconductors determinately affects the heterointerface charge injection and extraction dynamics. For perovskite solar cells (PSCs), the heterointerface between the top perovskite surface and a charge-transporting material (CTM) is often treated for defect passivation to improve PSC stability and performance. However, such surface treatments could also affect the heterointerface energetics. Here we show that surface treatments may induce a negative work function shift (i.e. more n-type), which activates halide migration to aggravate PSC instability. Therefore, despite the beneficial effects of surface passivation, this detrimental side effect limits the maximum stability improvement attainable for PSCs treated in these ways. Furthermore, this trade-off between the beneficial and detrimental effects should guide further work on improving PSC stability via surface treatments.

14 SOLAR ENERGY↗
DOE OSTI2021

Molecular dopants: Tools to control the electronic structure of metal halide perovskite interfaces

In the standard configurations of metal halide perovskite solar cell, the active layer, or absorber, follows a p-i-n or n-i-p electronic structure that is designed to enhance the separation and extraction of photo-induced charge carriers. The control of the Fermi level position across the film, between electron and hole transport layers, is therefore of paramount importance. Direct localized doping in metal halide perovskites being still elusive, the design of n-i-p and p-i-n structures has so far relied predominantly on surface and interface doping of the perovskite as well as on the control of the work function of the substrate and transport layers on which, or between which, the absorber is being placed. We provide here a short review of that work, emphasizing the fundamental studies of electronic structure performed on systems modified with organic molecular dopants. The review starts with a justification for the effectiveness of interface doping, based on the ability to move the Fermi level across the gap of the perovskite. We then review work done on the deposition of molecular oxidants and reductants on perovskite surfaces, including the mitigation of the surface states, and the impact of these dopants on energy level alignment with substrate and charge transport layers. The second part of the review focuses on the use of molecular dopants to either modify the work function of electron or hole transport layers to establish the boundary conditions for a p-i-n or n-i-p structure, or to enhance the conductivity of these layers in order to facilitate charge carrier extraction. Final considerations are also given on recent work on bulk doping of the perovskite layer with molecular dopants.

14 SOLAR ENERGY↗
NASA NTRS1978

Array Automated Assembly Task Low Cost Silicon Solar Array Project, Phase 2

Progress in the development of solar cells and module process steps for low-cost solar arrays is reported. Specific topics covered include: (1) a system to automatically measure solar cell electrical performance parameters; (2) automation of wafer surface preparation, printing, and plating; (3) laser inspection of mechanical defects of solar cells; and (4) a silicon antireflection coating system. Two solar cell process steps, laser trimming and holing automation and spray-on dopant junction formation, are described.

Rhee, S. S.↗
NASA NTRS1988

Analytical determination of critical crack size in solar cells

Although solar cells usually have chips and cracks, no material specifications concerning the allowable crack size on solar cells are available for quality assurance and engineering design usage. Any material specifications that the cell manufacturers use were developed for cosmetic reasons that have no technical basis. Therefore, the Applied Solar Energy Corporation (ASEC) has sponsored a continuing program for the fracture mechanics evaluation of GaAs. Fracture mechanics concepts were utilized to develop an analytical model that can predict the critical crack size of solar cells. This model indicates that the edge cracks of a solar cell are more critical than its surface cracks. In addition, the model suggests that the material specifications on the allowable crack size used for Si solar cells should not be applied to GaAs solar cells. The analytical model was applied to Si and GaAs solar cells, but it would also be applicable to the semiconductor wafers of other materials, such as a GaAs thin film on a Ge substrate, using appropriate input data.

Chen, C. P.↗