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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

High-Power Impulse Magnetron Sputter Deposition of Boron Carbide with Full-Face Erosion Magnetron and Mixed Ar-Ne Plasma

Boron carbide (B 4 C) is an attractive inertial confinement fusion ablator material. The fabrication of B4C ablators by magnetron sputtering requires process optimization. To increase process flexibility, here we explore high-power impulse magnetron sputter (HiPIMS) deposition of B 4 C in pure Ar and mixed Ar-Ne plasmas. Here, the results show that higher plasma discharge currents can be reached with a mixed Ar-Ne plasma in the entire working pressure range studied (5 𝑡𝑜 50 mTorr). At 45 mTorr with 10% of Ne in the Ar-Ne mix, high peak target current densities of ~1 A cm −2 were demonstrated. Films deposited with such a mixed Ar-Ne plasma with a full-face erosion magnetron source on substrates biased at −25 V exhibited higher density and improved mechanical properties, albeit with higher compressive residual stresses compared to the case of HiPIMS deposition in a pure Ar plasma. This work demonstrates additional process flexibility of the HiPIMS discharge mode for the deposition of B 4 C coatings.

Ablator capsule↗
DOE OSTI2023

ELM sputter erosion modeling of a tungsten coated small angle slot divertor in DIII-D

We modeled plasma edge localized mode (ELM) sputter erosion for a Small Angle Slot divertor with a tungsten coated region (SAS-VW), designed for experiments in the DIII-D tokamak, and proposed for use in future advanced tokamaks. The simulations use a free-streaming, 1000 eV, C +6 and D +1 ELM impingement model, with SOLPS-ITER, ITMC-DYN, and REDEP/WBC code packages for background plasma, material response, and erosion/redeposition respectively. The results show ELM'ing plasma gross and net tungsten erosion fluxes of the mixed-material C/W surface peaking at the slot entrance region, and an order of magnitude higher than for non-ELMs. The per-pulse erosion, however, remains low, of order 0.5 nm, due to expected moderate ELM frequencies and duration in DIII-D. Here, the ELMs result in a ~25x higher peak sputtered W current leaving the divertor slot region, towards the core plasma, compared to the ELM-free plasma case. The time-integrated escape current, however, may not significantly affect core plasma high-Z contamination concerns, for a 1% ELM duty factor, but may be an issue for higher frequency ELMs. In general, the modeling results appear favorable for effective testing of the SAS-VW divertor in DIII-D, and extrapolation to innovative divertor designs in future ITER-like and DEMO fusion devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Amorphous sulfide heterostructure precursors prepared by radio frequency sputtering

Two-dimensional sulfides and their heterostructures have emerged as potentially useful materials for technological applications. Controllable self-assembly of interleaved crystalline heterostructures from designed thin-film precursors has been demonstrated in selenide and telluride chemical systems, but not yet in sulfide chemistries. Preparing such amorphous sulfide heterostructure precursors is a necessary first step toward this goal. Here, deposition of thin-film amorphous precursors for layered sulfide heterostructures by RF sputtering is presented on the example of SnS-MoS 2 . Here, a calibration process specific to the mechanisms of RF sputtering from sulfide and disulfide compound targets is established. Precursor film structure and composition are confirmed via x-ray reflectivity and Rutherford backscattering measurements. Local nanostructure and composition are also examined by electron microscopy and electron energy loss spectroscopy.

14 SOLAR ENERGY↗
DOE OSTI2024

Impact of high-power impulse magnetron sputtering pulse width on the nucleation, crystallization, microstructure, and ferroelectric properties of hafnium oxide thin films

The impact of the high-power impulse magnetron sputtering (HiPIMS) pulse width on the crystallization, microstructure, and ferroelectric properties of undoped HfO 2 films is investigated. HfO 2 films were sputtered from a hafnium metal target in an Ar/O 2 atmosphere, varying the instantaneous power density by changing the HiPIMS pulse width with fixed time-averaged power and pulse frequency. The pulse width is shown to affect the ion-to-neutral ratio in the depositing species with the shortest pulse durations leading to the highest ion fraction. In situ x-ray diffraction measurements during crystallization demonstrate that the HiPIMS pulse width impacts nucleation and phase formation, with an intermediate pulse width of 110 μ s stabilizing the ferroelectric phase over the widest temperature range. Although the pulse width impacts the grain size with the lowest pulse width resulting in the largest grain size, the grain size does not strongly correlate with the phase content or ferroelectric behavior in these films. In conclusion, these results suggest that precise control over the energetics of the depositing species may be beneficial for forming the ferroelectric phase in this material.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Experimental Observation of the Confinement of Atomic Collision Cascades during Ion Sputtering of Porous Silicon

Results of investigation of the mass spectra of secondary ions sputtered from bulk (continuous) and porous silicon targets with various characteristic core particle dimensions are presented. It has been established that the sputtering of nanostructured Si samples leads to a significant increase in the relative yield of massive cluster ions. This effect is especially pronounced when the characteristic nanoparticle size approaches the range of bombarding ions in the Si target. The obtained results are explained taking into account the confinement of atomic collision cascades.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Microstructural Evolution and ORR Activity of Nanocolumnar Platinum Thin Films with Different Mass Loadings Grown by High Pressure Sputtering

Nanocolumnar platinum thin films (Pt-TFs) with different Pt mass loadings were grown by high pressure sputtering (HIPS) and investigated as oxygen reduction reaction (ORR) electrocatalysts for polymer electrolyte membrane fuel cell applications. Mass loading was controlled by changing the sputter deposition time. A cauliflower-like columnar microstructure was achieved by depositing the Pt-TFs onto a microporous layer (MPL)-like surface composed of carbon particles in order to mimic catalyst-coated gas diffusion electrodes. Microstructural evolution of HIPS Pt-TFs and their ORR activity were investigated. Electrochemical characterization of the nanocolumnar Pt-TFs was performed by cyclic voltammetry and rotating disk electrode measurements on Pt-TF/MPL-like-layer/glassy-carbon samples in an aqueous perchloric acid electrolyte. The electrochemically active surface area increased from 18 to 39 m 2 g –1 as the Pt mass loading was decreased. Specific activity of the films was similar (~600 μA cm –2 ) for all Pt mass loadings, due to the similar nanoparticle sizes of ~5 nm as observed by transmission electron microscopy and X-ray diffraction. Furthermore, mass activity of the films increased from 0.11 to 0.26 A mg –1 as the Pt mass loading was decreased, which is an indication of the effective Pt utilization and better access through the catalyst layer at lower Pt mass loadings.

08 HYDROGEN↗
DOE OSTI2022

Lithium nitride coatings deposited by magnetron sputtering on sulfide electrolytes for solid-state batteries

Lithium nitrides have been considered as promising candidates for interfacial layers in solid-state lithium batteries (SSBs). Previously reported lithium nitride (Li 3 N) coatings were mostly prepared by the reaction between lithium metal and nitrogen gas, which makes it challenging for their thickness control and integration in SSBs. In this study, we prepare Li 3 N via magnetron sputtering for the first time, and apply the resulting coating directly on sulfide solid-state electrolyte. A much smaller impedance increase associated with improved cycling performance is observed in lithium metal symmetric cell. These results demonstrate the feasibility of depositing Li 3 N via magnetron sputtering and its application in SSBs.

25 ENERGY STORAGE↗
DOE OSTI2021

In Situ X-ray Measurements to Follow the Crystallization of BaTiO 3 Thin Films during RF-Magnetron Sputter Deposition

Here, we report on adding an important dimension to the fundamental understanding of the evolution of the thin film micro structure evolution. Thin films have gained broad attention in their applications for electro-optical devices, solar-cell technology, as well storage devices. Deep insights into fundamental functionalities can be realized via studying crystallization microstructure and formation processes of polycrystalline or epitaxial thin films. Besides the fundamental aspects, it is industrially important to minimize cost which intrinsically requires lower energy consumption at increasing performance which requires new approaches to thin film growth in general. Here, we present a state of the art sputtering technique that allows for time-resolved in situ studies of such thin film growth with a special focus on the crystallization via small angle scattering and X-ray diffraction. Focusing on the crystallization of the example material of BaTiO 3 , we demonstrate how a prototypical thin film forms and how detailed all phases of the structural evolution can be identified. The technique is shaped to enable a versatile approach for understanding and ultimately controlling a broad variety of growth processes, and more over it demonstrate how to in situ investigate the influence of single high temperature sputtering parameters on the film quality. It is shown that the whole evolution from nucleation, diffusion adsorption and grain growth to the crystallization can be observed during all stages of thin film growth as well as quantitatively as qualitatively. This can be used to optimize thin-film quality, efficiency and performance.

36 MATERIALS SCIENCE↗
NASA NTRS1967

Ion beam sputtering of liquid metals.

Sputtering yields and energy-transfer efficiency measurements by ion beam sputtering of liquid metals indicate no justification for incorporation into low thrustor

METAL PARTICLE↗
NASA NTRS1999

Low Energy Sputter Yields for Diamond, Carbon-Carbon Composite, and Molybdenum Subject to Xenon Ion Nombardment

Sputter yields have been measured for polycrystalline diamond, single crystal diamond, a carbon-carbon composite, and molybdenum subject to bombardment with xenon. The tests were performed using a 3 cm Kaufman ion source to produce incident ions with energy in the range of 150 - 750 eV and profilometry based technique to measure the amount of sputtered material.

sputter yields Diamond Molybdenum subject Xenon Io↗
NASA NTRS2017

A Survey of Xenon Ion Sputter Yield Data and Fits Relevant to Electric Propulsion Spacecraft Integration

A survey of low energy xenon ion impact sputter yields was conducted to provide a more coherent baseline set of sputter yield data and accompanying fits for electric propulsion integration. Data uncertainties are discussed and different available curve fit formulas are assessed for their general suitability. A Bayesian parameter fitting approach is used with a Markov chain Monte Carlo method to provide estimates for the fitting parameters while characterizing the uncertainties for the resulting yield curves.

xenon↗
DOE OSTI2022

Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique

Breaking time-reversal symmetry by introducing magnetic order, thereby opening a gap in the topological surface state bands, is essential for realizing useful topological properties such as the quantum anomalous Hall and axion insulator states. In this work, a novel topological antiferromagnetic (AFM) phase is created at the interface of a sputtered, c-axis-oriented, topological insulator/ferromagnet heterostructure—Bi 2 Te 3 /Ni 80 Fe 20 because of diffusion of Ni in Bi 2 Te 3 (Ni-Bi 2 Te 3 ). The AFM property of the Ni-Bi2Te3 interfacial layer is established by observation of spontaneous exchange bias in the magnetic hysteresis loop and compensated moments in the depth profile of the magnetization using polarized neutron reflectometry. Analysis of the structural and chemical properties of the Ni-Bi2Te3 layer is carried out using selected-area electron diffraction, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. These studies, in parallel with first-principles calculations, indicate a solid-state chemical reaction that leads to the formation of Ni=Te bonds and the presence of topological antiferromagnetic (AFM) compound NiBi 2 Te 4 in the Ni-Bi 2 Te 3 interface layer. The Neél temperature of the Ni-Bi 2 Te 3 layer is ≈ 63 K, which is higher than that of typical magnetic topological insulators (MTIs). The presented results provide a pathway toward industrial complementary metal-oxide-semiconductor (CMOS)-process-compatible sputtered-MTI heterostructures, leading to novel materials for topological quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

In situ X-ray measurements over large Q-space to study the evolution of oxide thin films prepared by RF sputter deposition

Sputter deposition is a versatile and industrially important deposition technique for thin films, with increasing demand for matching the characteristics of thin film materials to specific requirements. Additionally, the actual film properties are largely determined by sputtering parameters such as pressure conditions, temperature and power settings. By means of various X-ray diffraction and scattering techniques, it is shown that the characterization of film formation and growth is feasible in real time at synchrotron sources, thus adding an important dimension to the fundamental understanding of the evolution of thin film microstructure. In particular, grazing incidence small-angle X-ray scattering, grazing incidence X-ray powder diffraction and X-ray reflectometry are used in a complementary manner to study the influence of deposition temperature and substrate choice on the crystallization kinetics and growth of polycrystalline BaTiO 3 films.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Effect of Ni Content on Double-Target Co-sputtered CrNiN Coatings

Double-target co-sputtered CrNiN coatings were deposited by DC-pulsed magnetron reactive sputtering. The nickel content increases from 0.7 to 5.0 at.% with the increased Ni target current from 0.10 to 0.40 A. The influence of Ni content on preferred orientation and properties of CrNiN coatings was investigated. The results show that the doped Ni enters CrN to form (Cr,Ni)N solid solution. CrNiN coatings are mainly composed of CrN phase and demonstrate CrN(111) preferred orientation. All the coatings present columnar growth pattern. And the less obvious the preferred orientation, the more intense competitive growth, the less sufficient the columnar growth, the finer the columnar crystal and the denser the microstructure. In spite of the most dense structure with finest grains, the hardness of CrNiN coating containing 0.7 at.% Ni is the lowest. The hardness is affected by multiple effects of preferred orientation, grain size, solid solution strengthening, morphology and stress, especially the intensity degree of preferred orientation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effect of substrate tilt on sputter-deposited AuTa films

Gold-tantalum alloy films are of interest for biomedical and magnetically-assisted inertial confinement fusion applications. However, growth mechanisms of such Au-Ta alloy films are not well understood. Here, we systematically study the effect of substrate tilt on properties of films deposited by direct current magnetron sputtering from a AuTa alloy target. Experimental data is correlated with distributions of landing energies and incident angles of sputtered and backscattered species calculated by Monte Carlo simulations of ballistic collisions and gas phase atomic transport. Results reveal that the deposition rate and film density monotonically decrease with increasing substrate tilt. Properties are similar for films with a tilt of 40° and below: films are amorphous, with an average compressive stress of 0.5 GPa, a density of 16 g/cm 3 , and electrical resistivity of 200 μΩ cm. The critical substrate tilt angle for the onset of porosity, a transition to a reduced stress state, and an increase in electrical resistivity lies between 40 and 60°. Based on Monte Carlo simulations, these changes in film properties are correlated with an increase in the average impact angle of the ballistic component of atomic flux. Implications of these results to deposition onto non-planar substrates are discussed.

36 MATERIALS SCIENCE↗