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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15

Modeling Visible/Near-Infrared Photometric Properties of Dustfall on a Known Substrate

We present a comprehensive visible/near-infrared two-layer radiative transfer modeling study using laboratory spectra of variable dust thicknesses deposited on substrates with known photometric parameters. The masking effects of Martian airfall dust deposition on rocks, soils, and lander/rover components provides the incentive to improve two-layer models [1-3]. It is believed that the model presented will facilitate understanding of the spectral and compositional properties of both the dust layer and substrate material, and allow for better compensation for dust deposition.

Sohl-Dickstein, J.↗

Evaluation of Biofilms and the Effects of Biocides Thereon

Biofilm formation is monitored by real-time continuous measurement. Images are formed of sessile cells on a surface and planktonic cells adjacent the surface. The attachment of cells to the surface is measured and quantitated, and sessile and planktonic cells are distinguished using image processing techniques. Single cells as well as colonies are monitored on or adjacent a variety of substrates. Flowing streams may be monitored. The effects of biocides on biofilms commonly isolated from recyclable water systems are measured.

Pierson, Duane L.↗

Low Earth orbit environmental effects on the space station photovoltaic power generation systems

A summary of the Low Earth Orbital Environment, its impact on the Photovoltaic Power systems of the space station and the solutions implemented to resolve the environmental concerns or issues are described. Low Earth Orbital Environment (LEO) presents several concerns to the Photovoltaic power systems of the space station. These concerns include atomic oxygen interaction with the polymeric substrate of the solar arrays, ionized environment effects on the array operating voltage, the effects of the meteoroids and debris impacts and penetration through the different layers of the solar cells and their circuits, and the high energy particle and radiation effects on the overall solar array performance. Potential solutions to some of the degrading environmental interactions that will provide the photovoltaic power system of the space station with the desired life are also summarized.

Nahra, Henry K.↗

Low earth orbit environmental effects on the Space Station photovoltaic power generation systems

A summary of the low earth orbital environment, its impact on the photovoltaic power systems of the Space Station and the solutions implemented to resolve the environmental concerns or issues are described. Low earth orbital environment (LEO) presents several concerns to the photovoltaic power systems of the Space Station. These concerns include atomic oxygen interaction with the polymeric substrate of the solar arrays, ionized environment effects on the array operating voltage, the effects of the meteoroids and debris impacts and penetration through the different layers of the solar cells and their circuits, and the high energy particle and radiation effects on the overall solar array performance. Potential solutions to some of the degrading environmental interactions that will provide the photovoltaic power system of the Space Station with the desired life are also summarized.

Nahra, H. K.↗

Effect of Tilt Angle on the Morphology of SiC Epitaxial Films Grown on Vicinal (0001) SiC Substrates

In this study of 4H-SiC and 6H-SiC epitaxial films we found that film morphology was strongly dependent on the tilt angle of the substrate. Large surface steps (up to 25 nm high) due to step bunching were more prevalent at smaller tilt angles. Also, 4H films were more susceptible than 6H to 3C-SiC inclusions during growth. The lateral growth of steps from screw dislocations in low-tilt-angle substrates demonstrated that step bunching on the atomic scale was anisotropic with respect to growth direction for both 4H-SiC and 6H-SiC. A model explaining this behavior is presented. We observed and directly measured the Burgers vector of a 'super' screw dislocation in a 6H-SiC epilayer.

Powell, J. A.↗

Using ALD To Bond CNTs to Substrates and Matrices

Atomic-layer deposition (ALD) has been shown to be effective as a means of coating carbon nanotubes (CNTs) with layers of Al2O3 that form strong bonds between the CNTs and the substrates on which the CNTs are grown. ALD is a previously developed vaporphase thin-film-growth technique. ALD differs from conventional chemical vapor deposition, in which material is deposited continually by thermal decomposition of a precursor gas. In ALD, material is deposited one layer of atoms at a time because the deposition process is self-limiting and driven by chemical reactions between the precursor gas and the surface of the substrate or the previously deposited layer.

Wong, Eric W.↗

Anisotropic thermal expansion effects in plasma-sprayed ZrO2-8 percent Y2O3 coatings

The thermal expansion properties of plasma-sprayed ZrO2-8-wt pct Y2O3 coatings, detached from the substrate, have been examined. Coatings were heat-treated in air or in argon. Anisotropic effects in the longitudinal (planar to the substrate surface) and transverse (perpendicular to the substrate surface) directions were measured and related to the coating structure. The thermal expansion coefficient of the coating is discussed in terms of the material's properties, such as the crack network and interlamellar boundary distribution. A precise model for the expansion behavior of coatings still needs attention, since no description of all of the contributing variables exists. A quantitative analysis of thermal properties of coatings will aid in future design and modeling of coating systems.

Berndt, C. C.↗

Wholly Aromatic Ether-Imides as n-Type Semiconductors

Some wholly aromatic ether-imides consisting of rod-shaped, relatively-low-mass molecules that can form liquid crystals have been investigated for potential utility as electron-donor-type (ntype) organic semiconductors. It is envisioned that after further research to improve understanding of their physical and chemical properties, compounds of this type would be used to make thin film semiconductor devices (e.g., photovoltaic cells and field-effect transistors) on flexible electronic-circuit substrates. This investigation was inspired by several prior developments: Poly(ether-imides) [PEIs] are a class of engineering plastics that have been used extensively in the form of films in a variety of electronic applications, including insulating layers, circuit boards, and low-permittivity coatings. Wholly aromatic PEIs containing naphthalene and perylene moieties have been shown to be useful as electrochromic polymers. More recently, low-molecular-weight imides comprising naphthalene-based molecules with terminal fluorinated tails were shown to be useful as n-type organic semiconductors in such devices as field-effect transistors and Schottky diodes. Poly(etherimide)s as structural resins have been extensively investigated at NASA Langley Research Center for over 30 years. More recently, the need for multi-functional materials has become increasingly important. This n-type semiconductor illustrates the scope of current work towards new families of PEIs that not only can be used as structural resins for carbon-fiber reinforced composites, but also can function as sensors. Such a multi-functional material would permit so-called in-situ health monitoring of composite structures during service. The work presented here demonstrates that parts of the PEI backbone can be used as an n-type semiconductor with such materials being sensitive to damage, temperature, stress, and pressure. In the near future, multi-functional or "smart" composite structures are envisioned to be able to communicate such important parameters to the flight crew and provide vital information with respect to the operational status of their aircraft.

Weiser, Erik↗

Wavelength-independent anti-interference coating for the far-infrared

The transmission and reflection of radiation at an interface between two dielectrics with a thin conducting film is analyzed under conditions appropriate to the far-infrared. When the transmission is from a more dense to a less dense optical medium it is demonstrated that the reflectivity can be made arbitrarily small for a wide range of wavelengths by selecting the appropriate sheet resistance for the conducting film. This property can be exploited to produce a coating that drastically reduces the interference fringes in a flat plane-parallel dielectric substrate or window. The condition depends only on the film resistance which can be monitored precisely during deposition. This effect is demonstrated by evaporating films of nichrome on silicon substrates, which reduce the interference fringe contrast to less than 1 percent transmittance from 10-100/cm. Near the antiinterference condition the fringe contrast is shown to be a sensitive probe of the film conductivity.

Mcknight, S. W.↗

Competing Classical and Quantum Effects in Shape Relaxation of a Metallic Island

Pb islands grown on a silicon substrate transform at room temperature from the initially flattop facet geometry into an unusual ring, shape with a volume-preserving mass transport process catalysed by the tip electrical field of a scanning tunnelling microscope. The formation of such ring shape morphology results from the competing classical and quantum effects in the shape relaxation. The latter also leads to a sequential regrowth on alternating, strips of the same facet defined by the underlying substrate steps, showing for the first time the dynamical impact of the quantum size effect on the stability of a nanostructure.

Okamoto, Rowland H.↗

Multilayer thin film Hall effect device

A Hall effect device and a method of obtaining a magnetic field map of a magnetic body with the Hall effect device are presented. The device comprises: (1) a substrate, (2) a first layer having a first Hall coefficient deposited over the substrate, and (3) a second layer having a second Hall coefficient deposited over the first layer, the first and second layers cooperating to create, in the Hall effect device, a third Hall coefficient different from the first and second Hall coefficients. Creation of the third Hall coefficient by cooperation of the first and second layers allows use of materials for the first and second layers that were previously unavailable for Hall effect devices due to their relatively weak Hall coefficient.

Peters, Palmer N.↗

Microstrip dispersion including anisotropic substrates

A perturbation-iteration solution based on potential theory is develoepd for determining the effective dielectric constant, characteristic impedance, and current-charge distribution on a microstrip transmission line with isotropic and anisotropic substrates. The numerical implementation of the theory is described and is suitable for use on a personal computer. Computed data for several common substrate materials are included.

Kretch, Brian E.↗

Study the Effects of Charged Particle Radiation on Gravitational Sensors in Space

Space-flight charging of free floating masses poses an unusual problem-- how can one control charge on the object without exerting a significant force on it? One approach is to make contact to the object with a fine wire. However, for many precision applications no physical contact is permissible, so charge must be conveyed in, a more sophisticated manner. One method has already been developed: Gravitational Probe B (GP-B) uses an ultraviolet photo-emission system described in ref 1. This system meets the experiment requirements, yet poses a number of constraints, including high power dissipation (approximately 10 W peak, approximately 1 W average), low current output (approximately 10(exp -13) A), and potential reliability problems associated with fiber optics system and the UV source. The aim of the current research is to improve this situation and, if possible, develop a more rugged and lower power alternative, usable in a wide range of situations. An potential alternative to the UV electron source is a Spindt-type field emission cathode. These consist of an array of extremely sharp silicon tips mounted in a standard IC package with provision for biasing them relative to the case potential. They are attractive as electron sources for space applications due to their low power consumption (10(exp -5) W), high current levels (10(exp -9) to 10(exp -5) A), and the absence of mechanical switching. Unfortunately, existing cathodes require special handling to avoid contamination and gas absorption. These contaminants can cause severe current fluctuations and eventual destruction of the cathode tips. Another potential drawback is the absence of any data indicating the possibility of bipolar current flow. This capability is needed because of the large uncertainties in the net charge transfer from cosmic rays to a free floating mass in space. More recent devices reduce the current fluctuations and destructive arcing by mounting the tips on a resistive substrate rather than a good conductor. This effectively wires a resistor to each individual tip, providing a current limit and thus greatly reducing the possibility of destructive arcing through an individual tip. An issue with this resistive layer is its range of operating temperatures. From the experience with the GP-B system, we hypothesized about using secondary electron emission for control of net charge transfer to an object. An important goal of the testing described below was to demonstrate the ability to apply both positive and negative charges to the test object from a single emitter.

Lipa, John A.↗

Solar cell modules for plasma interaction evaluation

A plasma interaction analysis in support of the solar electric propulsion subsystem examined the effects of a large high voltage solar array interacting with an ion thruster produced plasma. Two solar array test modules consisting of 36 large area wraparound contact solar cells welded to a flexible Kapton integrated circuit substrate were abricated. The modules contained certain features of the effects of insulation, din-holes, and bonding of the cell to the substrate and a ground plane. The possibility of a significant power loss occurring due to the collection of charged particles on the solar array interconnects was the focus of the research.

Source record↗

Cracking of coated materials under transient thermal stresses

The crack problem for a relatively thin layer bonded to a very thick substrate under thermal shock conditions is considered. The effect of surface cooling rate is studied by assuming the temperature boundary condition to be a ramp function. Among the crack geometries considered are the edge crack in the coating layer, the broken layer, the edge crack going through the interface, the undercoat crack in the substrate and the embedded crack crossing the interface. The primary calculated quantity is the stress intensity factor at various singular points and the main variables are the relative sizes and locations of cracks, the time, and the duration of the cooling ramp. The problem is solved and rather extensive results are given for two material pairs, namely a stainless steel layer welded on a ferritic medium and a ceramic coating on a steel substrate.

Rizk, A. A.↗

Cracking of coated materials under transient thermal stresses

The crack problem for a relatively thin layer bonded to a very thick substrate under thermal shock conditions is considered. The effect of surface cooling rate is studied by assuming the temperature boundary condition to be a ramp function. Among the crack geometries considered are the edge crack in the coating layer, the broken layer, the edge crack going through the interface, the undercoat crack in the substrate and the embedded crack crossing the interface. The primary calculated quantity is the stress intensity factor at various singular points and the main variables are the relative sizes and locations of cracks, the time, and the duration of the cooling ramp. The problem is solved and rather extensive results are given for two material pairs, namely a stainless steel layer welded on a ferritic medium and a ceramic coating on a steel substrate.

Rizk, A. A.↗

Methods for growth of relatively large step-free SiC crystal surfaces

A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

Neudeck, Philip G.↗