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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A low cost, quick turnaround technique for generating custom metal oxide semiconductor arrays using the standard cell approach was developed, implemented, tested and validated. Basic cell design topology and guidelines are defined based on an extensive analysis that includes circuit, layout, process, array topology and required performance considerations particularly high circuit speed.
A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (greater than 10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.
The STAR system developed by NASA enables any user with a logic diagram to design a semicustom digital MOS integrated circuit. The system is comprised of a library of standard logic cells and computer programs to place, route, and display designs implemented with cells from the library. Library cells of the CMOS metal gate and CMOS silicon gate technologies were simulated using SPICE, and the results are shown and compared.
The cosmic ray environment in space can affect the operation of Integrated Circuit (IC) devices via the phenomenon of Single Event Upset (SEU). In particular, heavy ions passing through an IC can induce sufficient integrated current (charge) to alter the state of a bistable circuit, for example a memory cell. The SEU effect is studied in great detail in both static and dynamic memory devices, as well as microprocessors fabricated from bipolar, Complementary Metal Oxide Semiconductor (CMOS) and N channel Metal Oxide Semiconductor (NMOS) technologies. Each device/process reflects its individual characteristics (minimum scale geometry/process parameters) via a unique response to the direct ionization of electron hole pairs by heavy ion tracks. A summary of these analytical and experimental SEU investigations is presented.
A document discusses a component of a laser metrology system designed to measure displacements along the line of sight with precision on the order of a tenth the diameter of an atom. This component, the phasemeter, measures the relative phase of two electrical signals and transfers that information to a computer. Because the metrology system measures the differences between two optical paths, the phasemeter has two inputs, called measure and reference. The reference signal is nominally a perfect square wave with a 50- percent duty cycle (though only rising edges are used). As the metrology system detects motion, the difference between the reference and measure signal phases is proportional to the displacement of the motion. The phasemeter, therefore, counts the elapsed time between rising edges in the two signals, and converts the time into an estimate of phase delay. The hardware consists of a circuit board that plugs into a COTS (commercial, off-the- shelf) Spartan-III FPGA (field-programmable gate array) evaluation board. It has two BNC inputs, (reference and measure), a CMOS logic chip to buffer the inputs, and an Ethernet jack for transmitting reduced-data to a PC. Two extra BNC connectors can be attached for future expandability, such as external synchronization. Each phasemeter handles one metrology channel. A bank of six phasemeters (and two zero-crossing detector cards) with an Ethernet switch can monitor the rigid body motion of an object. This device is smaller and cheaper than existing zero-crossing phasemeters. Also, because it uses Ethernet for communication with a computer, instead of a VME bridge, it is much easier to use. The phasemeter is a key part of the Precision Deployable Apertures and Structures strategic R&D effort to design large, deployable, segmented space telescopes.
MOS/silicon-on-sapphire (SOS) technology is shown to permit the realization of large-scale integrated arrays that combine the best features of monolithic bipolar and MOS technologies. The perfect isolation and reduced capacitance of SOS technology make possible static MOS circuits with nearly an order-of-magnitude improvement in speed and dynamic power dissipation over their monolithic counterparts. CMOS/SOS memory arrays have been fabricated with speeds comparable to TTL bipolar memory arrays even when operated at TTL compatible levels. Quiescent power dissipation of two described arrays is typically less than 1 microwatt/bit. The SOS/MOS technology is compatible with both aluminum and self-aligned silicon-gate processing.
Superconducting digital computing (SDC) based on Josephson junctions (JJs) offers significant potential for enhancing compute throughput and reducing energy consumption compared to conventional room-temperature CMOS-based approaches. Current superconducting logic families exhibit diverse characteristics in clocking strategies, power management, and information encoding techniques. This paper reviews recent advancements in unconventional computing methods specifically designed for superconducting digital circuits, emphasizing temporal computing and pulse-train representations. Notable techniques include race logic (RL), temporal pulse train computing (U-SFQ), and temporal multipliers, each offering unique performance and area advantages suited to superconducting implementations. Additionally, this paper reviews innovations in superconducting coarse-grain reconfigurable architectures (CGRA), superconducting-specific on-chip communication architectures, cryogenic sensor interfaces, and quantum computing control electronics. Finally, we highlight research challenges that should be addressed to facilitate the widespread adoption of superconducting digital computing.
The development of military and space electronics technology has traditionally been heavily influenced by the commercial semiconductor industry. The development of MOS technology, and particularly CMOS technology, as dominant commercial technologies has occurred entirely within the lifetime of the NSREC. For this reason, it is not surprising that the study of radiation interactions with MOS materials, devices and circuits has been a major theme of this conference for most of its history. The basic radiation problem in a MOS transistor is illustrated. The application of an appropriate gate voltage causes a conducting channel to form between the source and drain, so that current flows when the device is turned on. In Fig. lb, the effect of ionizing radiation is illustrated. Radiation-induced trapped charge has built up in the gate oxide, which causes a shift in the threshold voltage (that is, a change in the voltage which must be applied to turn the device on). If this shift is large enough, the device cannot be turned off, even at zero volts applied, and the device is said to have failed by going depletion mode.
Emerging technology is enabling the design community to consistently expand the amount of functionality that can be implemented within Integrated Circuits (ICs). As the number of gates placed within an FPGA increases, the complexity of the design can grow exponentially. Consequently, the ability to create reliable circuits has become an incredibly difficult task. In order to ease the complexity of design completion, the commercial design community has developed a very rigid (but effective) design methodology based on synchronous circuit techniques. In order to create faster, smaller and lower power circuits, transistor geometries and core voltages have decreased. In environments that contain ionizing energy, such a combination will increase the probability of Single Event Upsets (SEUs) and will consequently affect the state space of a circuit. In order to combat the effects of radiation, the aerospace community has developed several "Hardened by Design" (fault tolerant) design schemes. This paper will address design mitigation schemes targeted for SRAM Based FPGA CMOS devices. Because some mitigation schemes may be over zealous (too much power, area, complexity, etc.. . .), the designer should be conscious that system requirements can ease the amount of mitigation necessary for acceptable operation. Therefore, various degrees of Fault Tolerance will be demonstrated along with an analysis of its effectiveness.
Hybrid integrated circuits (ICs) containing both Si-based semiconducting and YBa(2)Cu(3)O(7-x) superconducting circuit elements on sapphire substrates developed. Help to prevent diffusion of Cu from superconductors into semiconductors. These hybrid ICs combine superconducting and semiconducting features unavailable in superconducting or semiconducting circuitry alone. For example, complementary metal oxide/semiconductor (CMOS) readout and memory devices integrated with fast-switching Josephson-junction super-conducting logic devices and zero-resistance interconnections.
This paper discusses the motivation, opportunities, and problems associated with implementing digital logic at very low voltages, including the challenge of making use of the available real estate in 3D multichip modules, energy requirements of very large neural networks, energy optimization metrics and their impact on system design, modeling problems, circuit design constraints, possible fabrication process modifications to improve performance, and barriers to practical implementation.
The method by which a commercial 4K CMOS PROM with polysilicon fuses was hardened and the feasibility of applying this method to a 16K PROM are presented. A description of the process and the necessary minor modifications to the original layout are given. The PROM circuit and discrete device characteristics over radiation to 1000K rad-Si are summarized. The dose rate sensitivity of the 4K PROMs is also presented.
A CMOS Process Monitor, consisting of eight basic test structures, has been prepared to acquire key CMOS parameters to assist in VLSI wafer acceptance. The test structures can be probed using a 2 by N probe pad array and can be arranged to fit into either the interior or the scribe lane of an integrated circuit chip. In order to facilitate the general use of the monitor, a document is being prepared that describes its design, layout, measurement, and analysis. This paper describes the structures included in the monitor, the methodology used to create the monitor, and test results from the monitor.
A method and device for imaging or detecting electromagnetic radiation is provided. A device structure includes a first chip interconnected with a second chip. The first chip includes a detector array, wherein the detector array comprises a plurality of light sensors and one or more transistors. The second chip includes a Read Out Integrated Circuit (ROIC) that reads out, via the transistors, a signal produced by the light sensors. A number of interconnects between the ROIC and the detector array can be less than one per light sensor or pixel.
Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.
A method for measuring a wide range of SET pulses is demonstrated. Use of dynamic logic, faster than ordinary CMOS, allows capture of short pulses. A weighted binning of SET lengths allows measurement of a wide range of pulse lengths with compact circuitry. A pulse-length-conservative pulse combiner tree routes SETs from combinational logic to the measurement circuit, allowing SET measurements in circuits that cannot easily be arranged in long chains. The method is applied to add-multiplex combinational logic, and to an array of NFET routing switches, at .35 micron. Pulses are captured in a chain of Domino Logic AND gates. Propagation through the chain is frozen on the trailing edge by dropping low the second "enable" input to the AND gates. Capacitive loading is increased in the latter stages to create an approximately logarithmic weighted binning, so that a broad range of pulse lengths can be captured with a 10 stage capture chain. Simulations show pulses can be captured which are 1/5th the length of those typically captured with leading edge triggered latch methods, and less than the length of those captured with a trailing edge latch method. After capture, the pulse pattern is transferred to an SEU protected shift register for readout. 64 instances of each of two types of logic are used as targets. One is a full adder with a 4 to 1 mux on its inputs. The other is a 4 x 4 NFET routing matrix. The outputs are passed through buffered XNOR comparators to identify pulses, which are merged in a buffered not-nand (OR) tree designed to avoid pulse absorption as much as possible. The output from each of the two test circuits are input into separate pulse measurement circuits. Test inputs were provided so that the circuit could be bench tested and calibrated. A third SET measurement circuit with no inputs was used to judge the contribution from direct hits on the measurement circuit. Heavy ions were used with an LET range from 12 to 176. At LET of 21 and below, the very small number of SETs were not significantly higher in the test over the control circuits. At higher LET the test circuit SETs are one or two orders of magnitude greater than for the control circuit. The NFET circuit produces more and slightly longer SETs as expected. But the differences do not appear to be significant enough to modify strategies now used to avoid capture of SETs in chips such as FPGAs. Complete data and graphs will be in the full paper / presentation. In the summary figure below left, NOCL is the reference circuit without any input, and number of stages triggered is plotted. Simulation at right shows the smallest pulse captured (stage 2) at about 300 ps. Our conclusion is that the method is promising, but that improvements in the merge network are desirable before applying in a deep submicron process
A novel analog muliplier using SOI four-gate transistors (G4-FETs) is presented. Thanks to the multiple inputs of the G4-FET that may be biased independently, the number of transistors in the proposed circuit is dramatically reduced, compared to conventional single-gate MOSFET based multipliers.
The current trend for space application systems is towards fully integrated systems-on-a-chip. To facilitate this drive, high-voltage transistors must reside on the same substrate as low-voltage transistors. These systems must also be radiation tolerant, particularly for space missions such as the Europa Lander and Titan Explorer. SOI CMOS technology offers high levels of radiation hardness. As a result, a high-voltage lateral MOSFET has been developed in a partially-depleted (PD) SOI technology. Utilizing high voltages causes a parasitic transistor to have non-negligible effects on a circuit. Several circuit architectures have been used to compensate for the radiation induced threshold voltage shift of the parasitic back-channel transistor. However, a new architecture for high-voltage systems must be employed to bias the substrate to voltage levels insuring all parasitic transistors remain off. An active substrate driver has been developed to accomplish task. Additional information is contained in the original extended abstract.