Search NASA⌕ Search

SEARCH · Search NASA

Results for “defect characterization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

A foundation model for non-destructive defect identification from vibrational spectra

Defects are ubiquitous in solids and strongly influence materials’ functional properties. However, non-destructive characterization and quantification of defects, especially when multiple types coexist, remain a long-standing challenge. Here, we introduce DefectNet, a foundation machine learning model that predicts the chemical identity and concentration of substitutional point defects with multiple coexisting elements directly from vibrational spectra, specifically phonon density-of-states (PDoS). Trained on over 16,000 simulated spectra from 2,000 semiconductors, DefectNet employs a tailored attention mechanism to identify up to six distinct defect elements at concentrations ranging from 0.2% to 25%. The model generalizes well to unseen crystals across 56 elements and can be fine-tuned on experimental data. Validation using inelastic scattering measurements of SiGe alloys and MgB 2 superconductor demonstrates its accuracy and transferability. Furthermore, our work establishes vibrational spectroscopy as a viable, non-destructive probe for bulk point defect quantification, and highlights the promise of foundation models in data-driven defect engineering.

artificial intelligence↗
NASA NTRS1998

Oxygen Impurities and Defects in Epitaxial Layer SiC and SiC Wafer Characterized by Room and Low Temperatures FTIR

SiC as a highly promising semiconducting material has received increasing attention in the last decade. The impurities such as oxygen and hydrogen have a great effect in electronic properties of semiconducting materials. In this study, the FTIR spectra were measured at room temperature (25 C) and low temperature (-70 C) for an n-type SiC substrate, a p-type epitaxial layer SiC, and patterned Ta on a p-type epitaxial layer SiC sample. The oxygen related IR peaks were measured for all three samples at room and low temperatures. The peak at 1105 cm(exp -1) is the result of a substitutional carbon and a interstitial oxygen in SiC. The concentration of the impurity oxygen increases in the SiC epitaxial layer during the CVD and electron beam processes. For the n-type SiC substrate, this peak does not appear. The peak at 905 cm(exp -1) exists in the IR spectra only for two epitaxial layer on p-type SiC substrate samples. This peak is related to oxygen vacancy centers in SiC, which are introduced in the CVD epitaxial growth process. At low temperature, the peak at 1105 cm(exp -1) shifts down and the peak at 905 cm(exp -1) shifts up for the epitaxial layer SiC samples. It can be explained that, at low temperatures, the stress increases due to the distorted bonds. The study shows that FTIR is a very effective method to evaluate low concentration impurities in SiC.

Lu, W. J.↗
DOE OSTI2022

Method and apparatus for real time, in situ sensing and characterization of roughness, geometrical shapes, geometrical structures, composition, defects, and temperature in three-dimensional manufacturing systems

Methods and apparatuses for manufacturing are disclosed, including (a) providing an apparatus having: a laser; scanner; powder injection system; powder spreading system; dichroic filter; imager-and-processor; and computer; (b) programming the computer with specifications of a sample; (c) using the computer to set initial parameters based on the sample specifications; (d) adjusting a stage to position the sample; (e) focusing and scanning electromagnetic radiation onto the sample while powder is concurrently injected onto the sample in order to deposit a layer; (f) capturing two-dimensional images of the sample and probing the sample to determine whether the deposited layer was manufactured per the specifications; (g) use the computer to adjust the three-dimensional manufacturing parameters based on the determination made in step (f) prior to additively manufacturing a subsequent layer or making repairs; and (h) repeating steps (d), (e), (f), and (g) until the manufacture is complete. Other embodiments are described and claimed.

Liu, Jian↗
DOE OSTI2025

Real-time tracking and analysis of gas bubble dynamics in laser powder bed fusion using in-situ X-ray characterization and machine learning

Porosity defects remain a significant challenge in the laser powder bed fusion (LPBF) process, adversely affecting the mechanical properties and reliability of additively manufactured components. Here, this study investigates the real-time formation and trajectory of gas bubbles during LPBF of Al6061 alloy using advanced in-situ X-ray characterization and machine learning. The unsupervised Gaussian mixture model and particle tracking algorithm developed are able to precisely track and quantify the properties of gas bubbles and keyhole pores. Our analysis identified five distinct types of gas bubble formation and movement patterns, emphasizing the diverse origins and behaviors of these defects. It enables precise quantification of trajectories, velocities, and morphological changes of gas bubbles, offering a granular view of the subsurface dynamics within the melt pool. Additionally, we explored keyhole-induced pore dynamics, revealing the critical role of keyhole oscillation and collapse for the formation of both large and small gas pores. It defines four different regions of gas bubble movement within the melt pool, providing a clearer understanding of how local fluid dynamics affect pore behavior. The results underscore the importance of integrating in-situ experimental observation and automated machine learning to develop a more robust predictive model for defect formation in LPBF.

In-situ X-ray imaging↗
NASA NTRS2006

High-Performance Scanning Acousto-Ultrasonic System

A high-performance scanning acousto-ultrasonic system, now undergoing development, is designed to afford enhanced capabilities for imaging microstructural features, including flaws, inside plate specimens of materials. The system is expected to be especially helpful in analyzing defects that contribute to failures in polymer- and ceramic-matrix composite materials, which are difficult to characterize by conventional scanning ultrasonic techniques and other conventional nondestructive testing techniques. Selected aspects of the acousto-ultrasonic method have been described in several NASA Tech Briefs articles in recent years. Summarizing briefly: The acousto-ultrasonic method involves the use of an apparatus like the one depicted in the figure (or an apparatus of similar functionality). Pulses are excited at one location on a surface of a plate specimen by use of a broadband transmitting ultrasonic transducer. The stress waves associated with these pulses propagate along the specimen to a receiving transducer at a different location on the same surface. Along the way, the stress waves interact with the microstructure and flaws present between the transducers. The received signal is analyzed to evaluate the microstructure and flaws. The specific variant of the acousto-ultrasonic method implemented in the present developmental system goes beyond the basic principle described above to include the following major additional features: Computer-controlled motorized translation stages are used to automatically position the transducers at specified locations. Scanning is performed in the sense that the measurement, data-acquisition, and data-analysis processes are repeated at different specified transducer locations in an array that spans the specimen surface (or a specified portion of the surface). A pneumatic actuator with a load cell is used to apply a controlled contact force. In analyzing the measurement data for each pair of transducer locations in the scan, the total (multimode) acousto-ultrasonic response of the specimen is utilized. The analysis is performed by custom software that extracts parameters of signals in the time and frequency domains. The computer hardware and software provide both real-time and postscan processing and display options. For example, oscilloscope displays of waveforms and power spectral densities are available in real time. Images can be computed while scanning continues. Signals can be digitally preprocessed and/or post-processed by filtering, windowing, time-segmenting, and running-waveform-averaging algorithms. In addition, the software affords options for off-line simulation of the waveform-data-acquisition and scanning processes. In tests, the system has been shown to be capable of characterizing microstructural changes and defects in SiC/SiC and C/SiC ceramic-matrix composites. Delaminations, variations in density, microstructural changes attributable to infiltration by silicon, and crack-space indications (defined in the next sentence) have been revealed in images formed from several time- and frequency-domain parameters of scanning acousto-ultrasonic signals. The crack-space indications were image features that were not revealed by other nondestructive testing methods and are so named because they turned out to mark locations where cracking eventually occurred.

Roth, Don↗
DOE OSTI2022

High‐Efficiency Solar Cells Grown on Spalled Germanium for Substrate Reuse without Polishing

Abstract Radical reduction of III–V device costs requires a multifaceted approach attacking both growth and substrate costs. Implementing device removal and substrate reuse provides an opportunity for substrate cost reduction. Controlled spalling allows removal of thin devices from the expensive substrate; however, the fracture‐based process currently generates surfaces with significant morphological changes compared to polished wafers. 49 single junction devices are fabricated across the spalled surface of full 50 mm germanium wafers without chemo‐mechanical polishing before epitaxial growth. Device defects are identified and related to morphological spalling defects—arrest lines, gull wings, and river lines—and their impact on cell performance using physical and functional characterization techniques. River line defects have the most consistent and detrimental effect on cell performance. Devices achieve a single junction efficiency above 23% and open‐circuit voltage of 1.01 V, demonstrating that spalled germanium does not need to be returned to a pristine, polished state to achieve high‐quality device performance.

14 SOLAR ENERGY↗
DOE OSTI2025

Scalable Bottom-Up Synthesis of Nanoporous Hexagonal Boron Nitride ( h -BN) for Large-Area Atomically Thin Ceramic Membranes

Nanopores embedded within monolayer hexagonal boron nitride (h-BN) offer possibilities of creating atomically thin ceramic membranes with unique combinations of high permeance (atomic thinness), high selectivity (via molecular sieving), increased thermal stability, and superior chemical resistance. However, fabricating size-selective nanopores in monolayer h-BN via scalable top-down processes remains nontrivial due to its chemical inertness, and characterizing nanopore size distribution over a large area remains extremely challenging. Here, we demonstrate a facile and scalable approach of exploiting the chemical vapor deposition (CVD) process temperature to enable direct incorporation of subnanometer/nanoscale pores into the monolayer h-BN lattice, in combination with manufacturing compatible polymer casting to fabricate centimeter-scale nanoporous atomically thin ceramic membranes. We leverage diffusive transport of analytes including size-selective Ficoll sieving to characterize subnanometer-scale and nanoscale defects that manifest as pores in centimeter-scale h-BN membranes, overcoming previous limitations in large-area characterization of nanoscale defects in h-BN. Our approach opens a new frontier to advance atomically thin membranes to 2D ceramic materials, such as h-BN via facile and direct formation of nanopores, for size-selective separations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2010

Fracture Mechanics Analyses of Reinforced Carbon-Carbon Wing-Leading-Edge Panels

Fracture mechanics analyses of subsurface defects within the joggle regions of the Space Shuttle wing-leading-edge RCC panels are performed. A 2D plane strain idealized joggle finite element model is developed to study the fracture behavior of the panels for three distinct loading conditions - lift-off and ascent, on-orbit, and entry. For lift-off and ascent, an estimated bounding aerodynamic pressure load is used for the analyses, while for on-orbit and entry, thermo-mechanical analyses are performed using the extreme cold and hot temperatures experienced by the panels. In addition, a best estimate for the material stress-free temperature is used in the thermo-mechanical analyses. In the finite element models, the substrate and coating are modeled separately as two distinct materials. Subsurface defects are introduced at the coating-substrate interface and within the substrate. The objective of the fracture mechanics analyses is to evaluate the defect driving forces, which are characterized by the strain energy release rates, and determine if defects can become unstable for each of the loading conditions.

Raju, Ivatury S.↗
NASA NTRS1995

The control of stoichiometry in Epitaxial semiconductor structures. Interfacial Chemistry: Property relations. A workshop review

A workshop on the control of stoichiometry in epitaxial semiconductor structures was held on August 21-26, 1995 in the hotel Stutenhaus at Vesser in Germany. The secluded location of the workshop in the forest of Thuringia and its informal style stimulated extensive private discussions among the participants and promoted new contacts between young scientists from Eastern and Western Europe and the USA. Topics addressed by the presentations were interactions of precursors to heteroepitaxy and doping with the substrate surface, the control of interfacial properties under the conditions of heteroepitaxy for selected materials systems, methods of characterization of interfaces and native point defects in semiconductor heterostructures and an in depth evaluation of the present status of the control and characterization of the point defect chemistry for one specific semiconductor (ZnGeP2), including studies of both heterostructures and bulk single crystals. The selected examples of presentations and comments given here represent individual choices - made by the author to highlight major points of the discussions.

Bachmann, Klaus J.↗
DOE OSTI2023

Bridging microscale to macroscale mechanical property measurements of FeCrAl alloys by crystal plasticity modeling

FeCrAl alloys are candidates for accident tolerant fuel cladding of light water reactors. In this work, a microstructure- and temperature-dependent crystal plasticity model is employed to bridge microscale to macroscale mechanical property measurements of FeCrAl alloys. With the visco-plastic self-consistent (VPSC) polycrystal plasticity framework, a mechanism-based single crystal plasticity (MSCP) model adopts the Arrhenius type rate equation to describe the dependence of the critical resolved shear stress for dislocation slips on their temperature-dependent intrinsic frictional resistance and the microstructure-dependent irradiation hardening. The intrinsic frictional resistance associated with {110}<111> and {112}<111> slip systems were measured by in-situ micromechanical testing on unirradiated/irradiated samples at 25-500 °C. The irradiation hardening is estimated by the Bacon-Kocks-Scattergood (BKS) model with density and size of radiation-induced defects measured from microstructural characterization. Several features associated with thermo-mechanical behavior of unirradiated/irradiated polycrystalline FeCrAl alloys are captured. High density of deformation-induced dislocations and radiation-induced defects results in obvious hardening at room temperature, which is weakened at high temperature, and facilitates damage evolution during deformation. Moreover, both high temperature and radiation-induced defects, which facilitate dislocation multiplication, trigger large hardening rate. Finally, the proposed method together with application of accelerator-based ion irradiation technique is a surrogate approach to simulate neutron damage, improving the efficiency associated with evaluation of mechanical properties of FeCrAl alloys exposed to temperature, stress and radiation conditions.

36 MATERIALS SCIENCE↗
NASA NTRS2019

An Experimental Investigation concerning the Effects of AFP Defects on Progressive Failure of Tensile Coupons

This paper discusses characterization approaches for the evaluation of potential defects that may occur during the automated fiber placement (AFP) process. Two nondestructive evaluation techniques were utilized simultaneously, acoustic emission (AE) and digital image correlation (DIC), to investigate correlations between mechanical properties and damage propagation during tension tests. The layup configuration is designed with the defect running across the width, and the stacking sequence with seven layers is produced: [−45/0/45/̅9̅̅0̅]s. A total of 3 panels were manufactured: one containing a gap defect in the middle layer, another one with an overlap defect, and a pristine panel for baseline comparison. Each panel accommodates six coupons having dimensions of 20” x 2”. The results indicate that defects caused during the manufacturing process affect damage initiation and growth.

Anay, Rafal↗
NASA NTRS1980

Effects of thermal annealing on the deep-level defects and I-V characteristics of 200 keV proton irradiated AlGaAs-GaAs solar cells

Detailed characterization of deep-level defects and analysis of dark I-V data in 200 keV proton irradiated AlGaAs-GaAs solar cells have been carried out for several proton fluences (5 x 10 to the 11th, 10 to the 12th, and 10 to the 13th P/sq cm), using DLTS, C-V, and I-V measurement techniques. To study the effect of low temperature thermal annealing on the deep-level defect properties, these irradiated samples were annealed in vacuum at 300 C for one hour. Comparison was then made on the measured defect parameters (i.e., defect energy levels and densities) and the dark I-V characteristics for both the annealed and unannealed samples.

Li, S. S.↗
DOE OSTI2021

Tuning Point Defects by Elastic Strain Modulates Nanoparticle Exsolution on Perovskite Oxides

Exsolution generates stable and catalytically active metal nanoparticles via phase precipitation out of a host oxide. An ability to control the size and dispersion of the exsolution particles is desirable for design of nanostructured (electro)catalysts. In this work, we demonstrate that tuning point defects by lattice strain affects both the thermodynamics and the kinetics of iron (Fe 0 ) exsolution on La 0.6 Sr 0.4 FeO 3 (LSF) thin film model. By combining in situ surface characterization and ab initio defect modeling, we show oxygen vacancy and Schottky defects to be the primary point defects formed upon Fe0 exsolution. Lattice strain tunes the formation energy, and thus the abundance of these defects, and alters the amount and size of the resulting exsolution particles. In addition, we find that the density of exsolved nanoparticles matches the concentration of oxygen vacancy pairs, thus pointing to the surface oxygen vacancy pairs as preferential nucleation sites for exsolution. The tensile-strained LSF with a facile formation of these critical point defects results in a higher Fe 0 metal concentration, a larger density of nanoparticles, and a reduced particle size at its surfaces. These results provide important mechanistic insights and highlight the role of point-defect engineering in designing nanostructured catalysts in energy and fuel conversion technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Identifying point defects and ordering in the high-entropy layered oxide Li 1.5 MO 3-δ (M=Mn, Al, Fe, Co, Ni) for energy storage applications

High-entropy layered oxides (HELOs) represent a very promising class of next-generation battery cathodes, combining the well-studied properties of layered cathode materials such as LiCoO 2 with the chemical tunability and stability of high-entropy materials. HELO materials often form particles with complex defects and domain structures, complicating accurate characterization of structure and cation mixing. Understanding disorder and order in HELO materials is necessary for understanding their performance and utility as cathodes. Here we demonstrate the characterization of the HELO Li 1.5 MO 3-δ (M = Mn, Al, Fe, Co, Ni), wherein X-ray powder diffraction, transmission electron microscopy imaging, and electron diffraction patterns are analyzed to reveal the presence of ordering in the HELO, with imaging and diffraction simulation employed to compare experimental results to atomic modeling. Finally, without rigorous characterization at the atomic scale, important features such as defect ordering can be easily overlooked and therefore remain unconsidered when interpreting experimental results.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method

Abstract In this work, we reported two-photon absorption (TPA) measurements for aluminum vacancies in Aluminum nitride single crystals. We measured the linear transmission and identified the defect levels. Using the Z-scan method, we measured the TPA coefficients of the transitions between defect levels from 380 nm to 735 nm. The transition occurs between the aluminum vacancies defect levels. Furthermore, the power dependence shows good linear fitting, confirming the TPA mechanism. These results will be helpful for the design and fabrication of ultra-low loss waveguides and integrated photonics in the ultraviolet spectral range.

Engineering↗
DOE OSTI2022

Quarterly Management Document – FY22, 3rd Quarter, Multi-pass Hybrid Laser Arc Welding of Alloy 740H

During the 3rd quarter of FY22, progress was made on modeling and simulation of deep penetration laser welding of Alloy 740H. Advances in the modeling of residual stress development arising from the calculated temperature field of the solidifying weld pool were made to understand the development of solidification cracking. Additionally, preliminary modeling of the temperature field within the weld pool of a wobbling laser heat source was performed. The maximum temperature of the weld pool was found to vary with time. These result will allow modeling of deep penetration laser welding using a wobbling laser to mitigate weld defects and cracking. Also, additional characterization of hybrid laser arc welds indicated that these welds were not defect-free as originally thought and the current HLA welds would not be acceptable under criteria outlined in the ASME Boiler and Pressure Vessel Code, Section IX. Therefore, additional welding trails with variation of the welding parameters and HLA welding configurations are required to produce welds acceptable under the Section IX criteria. It was shown that considerable reduction of HLAW defects had been achieved with each successive welding campaign. Therefore additional variation of HLAW parameters may still yield the desired defect-free welds, however, options for alternate HLAW configurations as well as plate preheating are outlined as contingency plans to obtain suitable welds. These additional (unplanned) HLAW trial may prevent subsequent milestones from being achieved within the original budget.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Probing boron vacancy defects in hBN via single spin relaxometry

Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and optical addressability. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy to detect, read out, and spatially map spin-based quantum sensors at the nanoscale. Using the boron vacancy ($V$$^{–}_{B}$) center in hexagonal boron nitride—an emerging two-dimensional spin system—as a model, we detect its electron spin resonance indirectly via changes in the spin relaxation time (T 1 ) of a nearby NV center, eliminating the need for optical excitation or fluorescence detection of the $V$$^{–}_{B}$. Cross-relaxation between NV and $V$$^{–}_{B}$ ensembles significantly reduces NV T1, enabling quantitative nanoscale mapping of defect densities beyond the optical diffraction limit and clear resolution of hyperfine splitting in isotopically enriched h 10 B 15 N. Our method demonstrates interactions between spin sensors in 3D and 2D materials, establishing NV centers as versatile probes for characterizing otherwise inaccessible spin defects.

Quantum metrology↗