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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15

Enhanced Exciton-to-Trion Conversion by Proton Irradiation of Atomically Thin WS 2

Defect engineering of van der Waals semiconductors has been demonstrated as an effective approach to manipulate the structural and functional characteristics toward dynamic device controls, yet correlations between physical properties with defect evolution remain underexplored. Here, using proton irradiation, we observe an enhanced exciton-to-trion conversion of the atomically thin WS 2 . The altered excitonic states are closely correlated with nanopore induced atomic displacement, W nanoclusters, and zigzag edge terminations, verified by scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. Density functional theory calculation suggests that nanopores facilitate formation of in-gap states that act as sinks for free electrons to couple with excitons. The ion energy loss simulation predicts a dominating electron ionization effect upon proton irradiation, providing further evidence on band perturbations and nanopore formation without destroying the overall crystallinity. This study provides a route in tuning the excitonic properties of van der Waals semiconductors using an irradiation-based defect engineering approach.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

The influence of lattice defects, recombination, and clustering on thermal transport in single crystal thorium dioxide

Thermal transport is a key controlling property for thorium dioxide in many applications where defect-generating radiation fields are present. An understanding of the effect of nanoscale lattice defects on thermal transport in this material is currently unavailable due to a lack of high-quality, single crystal material from which unit processes may be investigated. In this work, a series of thorium dioxide single crystals are exposed to 2 MeV proton irradiation at room temperature and 600°C to create microscale regions with varying densities and types of point and extended defects. Defected regions are investigated using spatial domain thermoreflectance to quantify the change in thermal conductivity as a function of ion fluence as well as transmission electron microscopy and Raman spectroscopy to interrogate the structure of the generated defects. Together, this com- bination of methods provides important initial insight into defect formation, recombination, and clustering in thorium dioxide and the effect of those defects on thermal transport. These methods also provide a promising pathway for the quantification of the smallest-scale defects which cannot be captured using traditional microscopy techniques and play and outsized role in degrading thermal performance.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Silicon strip defects and their impact on electrical performance of readout electronics

Abstract In preparation for the High Luminosity LHC (HL-LHC) runs, the ATLAS inner detector will be completely replaced with an all silicon Inner Tracker (ITk). Hybrid silicon pixel modules will be used for the innermost tracking layers, and silicon micro-strip detectors will be used the outer layers of the tracker. During the production of the detector, the sensors, readout electronics, and other components will undergo a series of quality control (QC) and quality assurance tests. Defects in the fabrication of the sensors will be flagged early in the manufacturer's and ATLAS QC tests. A study of the influence of sensor defects was performed to assess the characteristics of these defects in completed modules, and whether any defect posed a risk to the operation of the front-end readout electronics. All defects were found to have no impact on the performance of the front-end readout electronics for healthy amplifier channels, and defects that short the coupling between the strip implant and the metal readout electrode were only noticeable for strip leakage currents in excess of 250 nA, beyond the end-of-life currents expected for most sensors at the HL-LHC.

Instruments & Instrumentation↗

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Not provided.We demonstrate high p-type conductivity and hole concentrations >10 18 cm -3 in Mg-implanted GaN. The implantation was performed at room temperature and by post-implantation annealing at 1 GPa of N 2 and in a temperature range of 1200–1400 °C. The high pressure thermodynamically stabilized the GaN surface without the need of a capping layer. We introduce a “diffusion budget,” related to the diffusion length, as a convenient engineering parameter for comparing samples annealed at different temperatures and for different times. Although damage recovery, as measured by XRD, was achieved at relatively low diffusion budgets, these samples did not show p-type conductivity. Further analyses showed heavy compensation by the implantation-induced defects. Higher diffusion budgets resulted in a low Mg ionization energy (~115 meV) and almost complete Mg activation. For even higher diffusion budgets, we observed significant loss of Mg to the surface and a commensurate reduction in the hole conductivity. High compensation at low diffusion budgets and loss of Mg at high diffusion budgets present a unique challenge for shallow implants. A direct control of the formation of compensating defects arising from the implantation damage may be necessary to achieve both hole conductivity and low Mg diffusion.

36 MATERIALS SCIENCE↗

Model-based, in-situ, non-destructive qualification and certification of parts made by autonomous additive manufacturing

To address the significant productivity challenges associated with the qualification and certification (Q&C) tasks of additively manufactured (AM) parts, which have traditionally relied on rigorous post‐build inspection and testing, we propose an integrated framework that combines model‐based qualification and certification (MBQ&C) with autonomous additive manufacturing (AAM). MBQ&C employs high‐fidelity predictive models, developed within the Integrated Computational Materials Engineering (ICME) paradigm, to simulate process–structure–property–performance relationships for assessing a part’s fitness for use. Since predictive models are commonly machine learning (ML)-based or reduced-order surrogates of validated physics models, they run efficiently, enabling timely inference. In parallel, the self-driving AAM utilises ML-based adaptive, closed‐loop control strategies to avoid, mitigate, or repair defects and anomalies during fabrication, thereby increasing the likelihood of producing acceptable parts. A key feature of the combined AAM-MBQ&C framework is that predictive models explicitly incorporate defects or anomalies that persist after the build, using instance-specific data captured via in-situ sensing. This customisation enables a build‐specific assessment of fitness for use, rather than relying on nominal or generic parameters. Such individualised evaluation provides a robust basis for Q&C-related acceptance decisions relating to each build. Additionally, the rapid solution capabilities of ML or reduced-order models enable the determination of a part’s suitability for service shortly after build completion. As the framework matures, it has the potential to substantially reduce reliance on conventional point‐design approaches—such as time‐consuming post‐build computed tomography scanning and costly destructive testing. Thus, the AAM-MBQ&C framework represents a transformative, scalable strategy for quality assurance of AM components, as parts produced within a stable, validated, and certified envelope can be certified with reduced testing. Key benefits include: (1) significant gains in Q&C productivity through efficient, model-centric assessment; (2) performance-based classification of defects into critical and non-critical categories; (3) the ability to predict potential deviations in the performance of parts affected by real-time, adaptive process control interventions relative to those produced under a certified process, and (4) the enabling of virtual Q&C for service environments that are difficult, hazardous, or impractical to access or reproduce experimentally. Collectively, these capabilities strengthen the business case for AM, particularly for high‐consequence and mission‐critical applications. Finally, although this work focuses on powder-based AM, the proposed techniques could be extended to AM processes employing alternative feedstock forms.

Gunasegaram, Dayalan↗

Amine-Thiol/Selenol Chemistry for Efficient and Stable Perovskite Solar Cells

Controlling the crystallization of perovskites is imperative to reduce defect densities in perovskite thin films and extend device lifetimes. In this work, combinations of amine and chalcogenide ligands were introduced in the sequential deposition method to fabricate highly crystalline and orientated formamidinium lead iodide thin films with reduced defect densities and increased charge carrier lifetimes. The dual additives can tune the perovskite intermediate state and control the crystallization leading to devices with improved efficiencies and stabilities. While thiophenol failed to prevent the amine ligand from degrading the perovskite precursors, benzene selenol combinations with amine-ligands drastically changed the solution chemistry to increase the PbI 2 conversion to highly crystalline and orientated α-FAPbI 3 films with lower defect densities. X-ray photoelectron spectroscopy studies reveal benzene selenol evaporates from the thin film leaving behind a modified surface, which is associated with the amine additive. These results indicate the amine selection can be used to tune the surface properties. Lastly, we propose a highly tunable I 2 reduction strategy using chalcogenide chemistry to help enable the realization of perovskite solar cells with high performance and stability.

defects↗

Plasma-assisted atomic layer etching of single-crystal diamond

Applications of near-surface nitrogen-vacancy (NV) centers in diamond are often limited by surface defects created during processing. Understanding and controlling plasma-induced surface damage is important for preserving the optical and spin properties of diamond NV centers. We report molecular dynamics simulations of a novel form of plasma-aided atomic layer etching of diamond. In this proposed scheme, the initial surface modification step consists of Ar + ion bombardment. This creates an amorphous layer at the surface, the thickness of which is controlled by the ion energy. Amorphization is known to help smooth the surface, at least locally, and would also serve to sputter clean an initially contaminated surface. A second step impacts the amorphous carbon layer with O + between about 1 and 5 eV. Simulations show that this energy range will remove the amorphous carbon but will not etch the underlying diamond. Though this energy range is not trivial to achieve in a conventional low-temperature plasma, potential methods for creating these low-energy O + ions are discussed. In addition to a-C etching, the O + impacts are predicted to remove any isolated (100) diamond terraces by selectively attacking the edges of the terraces. The proposed atomic layer etching (ALE) approach reverses the conventional ALE sequence in which the surface modification step is usually chemical modification (oxidation in this case), followed by a removal step using Ar + impacts. This plasma ALE procedure is predicted to create a diamond surface that is atomically flat and defect free.

Draney, J. S. [Princeton University, NJ (United St↗

Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide

The electronic and optical properties of two-dimensional materials can be strongly influenced by defects, some of which can find significant implementations, such as controllable doping, prolonged valley lifetime, and single-photon emissions. Here, we demonstrate that defects created by remote N 2 plasma exposure in single-layer WS 2 can induce a distinct low-energy photoluminescence (PL) peak at 1.59 eV, which is in sharp contrast to that caused by remote Ar plasma. This PL peak has a critical requirement on the N 2 plasma exposure dose, which is strongest for WS 2 with about 2.0% sulfur deficiencies (including substitutions and vacancies) and vanishes at 5.6% or higher sulfur deficiencies. Both experiments and first-principles calculations suggest that this 1.59 eV PL peak is caused by defects related to the sulfur substitutions by nitrogen, even though low-temperature PL measurements also reveal that not all the sulfur vacancies are remedied by the substitutional nitrogen. The distinct low-energy PL peak suggests that the substitutional nitrogen defect in single-layer WS 2 can potentially serve as an isolated artificial atom for creating single-photon emitters, and its intensity can also be used to monitor the doping concentrations of substitutional nitrogen.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Strategies for simultaneous strengthening and toughening via nanoscopic intracrystalline defects in a biogenic ceramic

While many organisms synthesize robust skeletal composites consisting of spatially discrete organic and mineral (ceramic) phases, the intrinsic mechanical properties of the mineral phases are poorly understood. Using the shell of the marine bivalve Atrina rigida as a model system, and through a combination of multiscale structural and mechanical characterization in conjunction with theoretical and computational modeling, we uncover the underlying mechanical roles of a ubiquitous structural motif in biogenic calcite, their nanoscopic intracrystalline defects. These nanoscopic defects not only suppress the soft yielding of pure calcite through the classical precipitation strengthening mechanism, but also enhance energy dissipation through controlled nano- and micro-fracture, where the defects’ size, geometry, orientation, and distribution facilitate and guide crack initialization and propagation. These nano- and micro-scale cracks are further confined by larger scale intercrystalline organic interfaces, enabling further improved damage tolerance.

36 MATERIALS SCIENCE↗

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

Abstract Silicon carbide (SiC) can be synthesized in a number of different structural forms known as polytypes with a vast array of optically active point defects of interest for quantum information sciences. The ability to control and vary the polytypes during SiC synthesis may offer a powerful methodology for the formation of new material architectures that expand our ability to manipulate these defects, including extending coherence lifetimes and enhancing room temperature operation. Polytypic control during synthesis presents a significant challenge given the extreme conditions under which SiC is typically grown and the number of factors that can influence polytype selection. In situ monitoring of the synthesis process could significantly expand our ability to formulate novel polytype structures. In this perspective, we outline the state of the art and ongoing challenges for precision synthesis in SiC. We discuss available in situ x-ray characterization methods that will be instrumental in understanding the atomic scale growth of SiC and defect formation mechanisms. We highlight optimistic use cases for SiC heterostructures that will become possible with in situ polytypic control and end by discussing extended opportunities for integration of ultrahigh quality SiC materials with other semiconductor and quantum materials.

Harmon, K. J. (ORCID:0000000164277971)↗

Effect of water frustration on water oxidation catalysis in the nanoconfined interlayers of layered manganese oxides birnessite and buserite

The role of geometric frustration of water molecules on the rate of water oxidation in the nanoconfined interlayer of manganese-oxide layered materials (birnessite, buserite) is examined in a well-controlled experiment. Calcium buserite is prepared, and used in a split-batch synthetic protocol to prepare calcium birnessite, sodium buserite, and sodium birnessite, and partially dehydrated sodium birnessite. Thus, four samples are prepared in which features effecting catalytic efficiency (defect density, average manganese oxidation state) are controlled, and the main difference is the degree of hydration of the interlayer (two layers of water in buserites vs one layer of water in birnessite). Here, molecular dynamics simulations predict birnessite samples to exhibit geometric water frustration, which facilitates redox catalysis by lowering the Marcus reorganizaiton energy of electron transfer, while buserite samples exhibit traditional intermolecular hydrogen bonding among the two-layer aqeuous region, leading to slower catalytic behavior akin to redox reactions in bulk water. Water oxdiation activity is investigated using chemical and electrochemical techniques, demonstrating and quantifying the role of water frustration in enhancing catalysis. Calculation and experiment demonstrate dehydrated sodium birnessite to be most effective, and calcium buserite the least effective, with a difference in electrocatlytic overpotential of ~750 mV and a ~20-fold difference in turnover number.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Revealing the Origin and Nature of the Buried Metal‐Substrate Interface Layer in Ta/Sapphire Superconducting Films

Abstract Despite constituting a smaller fraction of the qubit's electromagnetic mode, surfaces and interfaces can exert significant influence as sources of high‐loss tangents, which brings forward the need to reveal properties of these extended defects and identify routes to their control. Here, we examine the structure and composition of the metal‐substrate interfacial layer that exists in Ta/sapphire‐based superconducting films. Synchrotron‐based X‐ray reflectivity measurements of Ta films, commonly used in these qubits, reveal an unexplored interface layer at the metal‐substrate interface. Scanning transmission electron microscopy and core‐level electron energy loss spectroscopy identified an intermixing layer (≈0.65 ± 0.05 nm) at the metal‐substrate interface containing Al, O, and Ta atoms. Density functional theory modeling reveals that the structure and properties of the Ta/sapphire heterojunctions are determined by the oxygen content on the sapphire surface prior to Ta deposition for two atomic terminations of sapphire. Using a multimodal approach, we gained deeper insights into the interface layer between the metal and substrate, which suggests that the orientation of deposited Ta films depend on the surface termination of sapphire. The observed elemental intermixing at the metal‐substrate interface influences the thermodynamic stability and electronic behavior of the film, which may also affect qubit performance.

36 MATERIALS SCIENCE↗

Solvent-Free Coating of Organic Semiconductor Membranes with Centimetric Crystalline Domains

Organic semiconductors (OSCs) have shown great promise in a variety of applications. Although solution processing of OSCs has resulted in high-quality films, exquisite control of structural development to minimize defect formation during large-scale fabrication remains formidable. Compounding this challenge is the use of halogenated organic solvents, which poses significant health and environmental hazards. However, the solvent-free techniques introduced thus far impose additional limitations on solidification kinetics; the resulting OSC thin films are often more defective than those processed from solution. Here, a solvent-free technique is reported to prepare OSC membranes with centimetric crystalline domains. Leveraging the tendency for liquid crystalline materials to preferentially orient, OSCs are “prealigned” by depositing them from the melt over a metal frame to form a freely suspended membrane. Additionally, crystallization from this prealigned phase affords membranes with unprecedented structural order across macroscopic distances. Field-effect transistors comprising membranes of dioctyl[1]-benzothieno[3,2-b][1]benzothiophene (C8BTBT) and didodecyl[1]-benzothieno[3,2-b][1]benzothiophene (C12BTBT) having centimeter-sized domains as active layers exhibit a hole mobility of ≈8.6 cm2 V -1 s -1 , superseding the mobility of any transistors whose active layers are deposited from melt. This technique is scalable to yield membranes with large crystalline domains over wafer dimensions, making it amenable for broad applications in large-area organic electronics.

36 MATERIALS SCIENCE↗

Mercury Chalcogenide Nanoplatelet–Quantum Dot Heterostructures as a New Class of Continuously Tunable Bright Shortwave Infrared Emitters

Despite broad applications in imaging, energy conversion, and telecommunications, few nanoscale moieties emit light efficiently in the shortwave infrared (SWIR, 1000–2000 nm or 1.24–0.62 eV). We report quantum-confined mercury chalcogenide (HgX, where X = Se or Te) nanoplatelets (NPLs) can be induced to emit bright (QY > 30%) and tunable (900–1500+ nm) infrared emission from attached quantum dot (QD) “defect” states. Here, we demonstrate near unity energy transfer from NPL to these QDs, which completely quench NPL emission and emit with a high QY through the SWIR. This QD defect emission is kinetically tunable, enabling controlled midgap emission from NPLs. Spectrally resolved photoluminescence demonstrates energy-dependent lifetimes, with radiative rates 10–20 times faster than those of their PbX analogues in the same spectral window. Coupled with their high quantum yield, midgap emission HgX dots on HgX NPLs provide a potential platform for novel optoelectronics in the SWIR.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Evolution of size-selected Pt cluster catalysts on prototypical oxide supports

The current quest for new pathways into sustainable, efficient and durable energy conversion technologies makes the used for a fundamental understanding of the atomic-scale phenomena underlying catalytic processes ever more pressing. In this context, characterizing catalyst particles in situ provides valuable information about the evolution of their composition, structure, oxidation state and charge state during an ongoing process. To disentangle the influence of individual parameters – temperature, pressure, gas composition, cluster size, as well as support acidity, redox state and defect density – it is crucial to control them precisely and separately in experiments. At the example of size-selected Pt n clusters – i.e. sub-nm particles defined to the exact number of atoms – on flat oxide supports, we follow their rich evolution phenomena via (synchrotron-based) X-ray photoelectron spectroscopy (XPS) and scanning tunnelling microscopy (STM) during temperature ramps and in various gas environments. Here, we present our experience with these highly defined, yet complicated-to-create samples in ultra-high vacuum (UHV) and at mbar pressures. We discuss their stability during transport to synchrotrons and under reaction conditions on three prototypical oxide supports and show the various phenomena that can be disentangled. Ptn clusters on the non-reducible silicon dioxide, SiO 2 , remain size-selected and show remarkable stability. Doping strongly influences the size-dependent binding energy shifts and changes the Pt response to oxidative and reaction conditions, which we attribute to different cluster geometries: p-type doping leads to wetting, enhanced sinter resistance and a diminished response to oxidative environments, compared to clusters on n-type doped samples. We compare the system with our previous findings of a similar change in dimensionality for Pt 20 clusters on the reducible ceria, CeO 2 (111), support, induced by modulation of its O vacancy density. The Pt n /CeO 2 system is particularly interesting for strategies to stabilize and redisperse Pt clusters dynamically. Finally, we study the evolution of Pt n clusters on another reducible oxide support, magnetite, Fe 3 O 4 (001), in 0.1 mbar alternating redox conditions at RT and elevated temperature. In analogy to findings previously reported for Pt/TiO 2 (110), the clusters either become encapsulated by a thin oxide film via strong metal–support interaction (SMSI) or deeply buried in the magnetite. Overall, our approach of following the evolution of size-selected clusters on oxide supports leads to fundamental atomic-scale insights on nano-scale catalyst materials, on our path to sustainable, dynamic and self-repairing catalysts.

Falling, Lorenz J. [Technical Univ. of Munich (Ger↗

Scanning ultrafast electron microscopy reveals photovoltage dynamics at a deeply buried $p^- \mathrm{Si/SiO_2}$ interface

The understanding and control of charge carrier interactions with defects at buried insulator/semiconductor interfaces is essential for achieving optimum performance in modern electronics. In this work, we report on the use of scanning ultrafast electron microscopy (SUEM) to remotely probe the dynamics of excited carriers at a Si surface buried below a thick thermal oxide. Our measurements illustrate a previously unidentified SUEM contrast mechanism, whereby optical modulation of the space-charge field in the semiconductor modulates the electric field in the thick oxide, thus affecting its secondary electron yield. By analyzing the SUEM contrast as a function of time and laser fluence we demonstrate the diffusion mediated capture of excited carriers by interfacial traps.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A pathway to desired functionalities in vertically aligned nanocomposites and related architectures

Epitaxial vertically aligned nanocomposites (VANs) and their related architectures have shown many intriguing features that are not available from conventional two-dimensional planar multilayers and heterostructures. The ability to control constituent, interface, microstructure, strain, and defects based on VANs has enabled the multiple degrees of freedom to manipulate the optical, magnetic, electrochemical, electronic, ionic, and superconducting properties for specific applications. This field has rapidly expanded from the interest in oxide:oxide to oxide:metal, metal:nitride and nitride:nitride systems. To achieve unparalleled properties of the materials, three-dimensional super-nanocomposites based on a hybrid of VAN and multilayer architectures have been recently explored as well. The challenges and opportunities of VAN films are also discussed in this article.

36 MATERIALS SCIENCE↗