SEARCH · Search NASA

Results for “defect emission”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 271 records · Page 15

All sources NASA NTRS DOE OSTI

NASA NTRS1982

Improved Model for MOS Breakdown

With an improved model, accelerated high-field tests can be used to predict gate-oxide breakdown in metal-oxide-semi-conductor (MOS) structures. Principal mechanism in MOS breakdown is mobile-ion emission from metal/oxide interface, which occurs during application of positive gate-bias field. Breakdown is related to clustering of emitted ions at localized defect sites in oxide/silicon interface. Using new model to interpret data, tests that normally take several weeks at low fields to accumulate sufficient statistics can be completed in only a few hours at high fields.

Li, S. P.↗

NASA NTRS1999

Point Defect Distributions in ZnSe Crystals: Effects of Gravity Vector Orientation During Physical Vapor Transport Growth

ZnSe crystals were grown by the physical vapor transport technique under horizontal and vertical (stabilized and destabilized) configurations. Secondary ion mass spectroscopy and photoluminescence measurements were performed on the grown ZnSe samples to map the distributions of [Si], [Fe], [Cu], [Al] and [Li or Na] impurities as well as Zn vacancy, [V (sub Zn)]. Annealings of ZnSe under controlled Zn pressures were studied to correlate the measured photoluminescence emission intensity to the equilibrium Zn partial pressure. In the horizontal grown crystals the segregations of [Si], [Fe], [Al] and [V (sub Zn)] were observed along the gravity vector direction whereas in the vertically stabilized grown crystal the segregation of these point defects was radially symmetrical. No apparent pattern was observed on the measured distributions in the vertically destabilized grown crystal. The observed segregations in the three growth configurations were interpreted based on the possible buoyancy-driven convection in the vapor phase.

Su, Ching-Hua↗

NASA NTRS1981

A quantitative method for photovoltaic encapsulation system optimization

It is pointed out that the design of encapsulation systems for flat plate photovoltaic modules requires the fulfillment of conflicting design requirements. An investigation was conducted with the objective to find an approach which will make it possible to determine a system with optimum characteristics. The results of the thermal, optical, structural, and electrical isolation analyses performed in the investigation indicate the major factors in the design of terrestrial photovoltaic modules. For defect-free materials, minimum encapsulation thicknesses are determined primarily by structural considerations. Cell temperature is not strongly affected by encapsulant thickness or thermal conductivity. The emissivity of module surfaces exerts a significant influence on cell temperature. Encapsulants should be elastomeric, and ribs are required on substrate modules. Aluminum is unsuitable as a substrate material. Antireflection coating is required on cell surfaces.

Garcia, A., III↗

NASA NTRS1990

Review of acousto-ultrasonic NDE for composites

Acousto-ultrasonics utilizes simulated stress waves to detect and quantify defect states, damage conditions, and variations of mechanical properties in fiber reinforced composites. The term acousto-ultrasonics denotes a combination of aspects of acoustic emission methodology with ultrasonic materials characterization. The acousto-ultrasonic approach was developed to deal primarily with evaluation of the integrated effect of minor flaws and diffuse flaw populations of subcritical flaws in composite and bonded structures. These factors singly and collectively also influence acousto-ultrasonic measurements that, in turn, correlate with dynamic response and mechanical property variations. Since it was first introduced, the acousto-ultrasonic approach was successfully applied to a variety of materials, including polymeric, metallic, and ceramic matrix composites; adhesively bonded materials; paper and wood products; cable and rope; and also human bone. Examples of applications and limitations of the approach are reviewed. Basic methods and guidelines are discussed. The underlying hypothesis and theory development needs are indicated.

Vary, Alex↗

DOE OSTI2024

Programmable quantum emitter formation in silicon

Abstract Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N 2 /H 2 ) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and C i centers while passivating the more common G-centers. The C i center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the C i center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters.

36 MATERIALS SCIENCE↗

NASA NTRS1978

Effects of moisture in infrared thermography of resin matrix composites

Several multiply graphite polyimide composite specimens were examined by real-time infrared thermography in order to study the effects of moisture on their thermograms. Heat was injected from one side and IR emission detected on the opposite side using AGA Thermovision System-680. No differences between the thermograms of dry and water containing specimens were detected for defect-free specimens. However, the presence of trapped water in defective specimens modified the thermographic contrast significantly. It is concluded that: (1) IR thermography can be used to detect moisture in defective composites, and (2) because of the possibility of moisture camouflaging defects, IR thermography for subsurface defect detection should be supplemented by other techniques - such as acoustical imaging and X-radiography.

Singh, J. J.↗

NASA NTRSDate not supplied

Experimental Observations of Damage States in Unnotched and Notched 3D Orthogonal Woven Coupons Loaded in Tension

This paper describes a series of unnotched and notched tensile tests on two 3D orthogonal woven architectures. Dog bone specimens were used for the unnotched tests, and open-hole specimens were used for the notched tests. For each architecture and test type, two specimens were loaded under monotonic displacement control to failure and two specimens were incrementally loaded to failure in five steps. X-ray computed tomography (CT) was used to characterize the woven architecture and defects on each specimen prior to testing. Digital image correlation (DIC) images were obtained from both sides of the specimen throughout the loading and unloading. Acoustic emission (AE) data were also continuously acquired throughout the loading. For the incremental tests, X-ray CT was used to document the damage progression after each load increment. The damage progression was analyzed based on the results from these three techniques. The results for both architectures and test specimens followed a pattern where matrix cracks formed at the surface perpendicular to the tensile load direction. New surface cracks formed continuously throughout the loading and cracks extended in depth and width. In general, fiber failure was not detected until specimen failure.

Wade C Jackson↗

DOE OSTI2025

All-optical reconfiguration of single silicon-vacancy centers in diamond for non-volatile memories

Strain engineering is vital for tuning the optical and spin properties of solid-state color centers, enhancing spin coherence and compensating emission wavelength shift. Here, we develop an all-optical approach to directly modify the local strain of color centers at the nanoscale by migrating the nearby defect. High-power pulsed optical irradiation triggers defect migration, which subsequently leads to the redistribution of the local crystal lattice of the host material. This redistribution alters the strain experienced by nearby color centers. Using silicon-vacancy centers in diamond, we validate this method and demonstrate a ground state splitting enhancement of up to 1.8 THz. Unlike conventional methods, our approach requires no external fields or nanostructure modifications, enabling non-volatile strain control and optical memory functionality across wide temperature ranges. Its local, permanent nature offers a scalable path for enhancing spin coherence in large-scale quantum systems and has potential applications in photonic machine learning.

Nanoscale devices↗

DOE OSTI2023

Intra-Grain Local Luminescence Properties of CdSe0.1Te0.9 Thin Films

We report on the local photoluminescence properties of grains and grain boundaries of CdSe 0.1 Te 0.9 thin film deposited by the colossal grain growth method using a wide-field hyperspectral imaging technique. We observed significant variations in the photoluminescence intensity of both individual grains and also that of grain boundaries. Multiple sub-bandgap defect peaks were captured in the luminescence spectra in the energy range 1.2 eV to 1.6 eV. The intensity and peak positions of these sub-gap emissions were slightly different among various grains and at the grain boundaries, revealing intra- and inter-grain variations in these polycrystalline thin films. A recently-developed density-of-states based photoluminescence model was extended to include multiple peaks and was fitted to the data. We observed that at a fixed temperature, the quasi-Fermi level splitting energy and a disordered energy parameter can be extracted locally by use of this model.

data models↗

NASA NTRS2008

Advanced Low Conductivity Thermal Barrier Coatings: Performance and Future Directions (Invited paper)

Thermal barrier coatings will be more aggressively designed to protect gas turbine engine hot-section components in order to meet future engine higher fuel efficiency and lower emission goals. In this presentation, thermal barrier coating development considerations and performance will be emphasized. Advanced thermal barrier coatings have been developed using a multi-component defect clustering approach, and shown to have improved thermal stability and lower conductivity. The coating systems have been demonstrated for high temperature combustor applications. For thermal barrier coatings designed for turbine airfoil applications, further improved erosion and impact resistance are crucial for engine performance and durability. Erosion resistant thermal barrier coatings are being developed, with a current emphasis on the toughness improvements using a combined rare earth- and transition metal-oxide doping approach. The performance of the toughened thermal barrier coatings has been evaluated in burner rig and laser heat-flux rig simulated engine erosion and thermal gradient environments. The results have shown that the coating composition optimizations can effectively improve the erosion and impact resistance of the coating systems, while maintaining low thermal conductivity and cyclic durability. The erosion, impact and high heat-flux damage mechanisms of the thermal barrier coatings will also be described.

Zhu, Dongming↗

NASA NTRS2008

Advanced Low Conductivity Thermal Barrier Coatings: Performance and Future Directions

Zhu, Dongming↗

DOE OSTI2023

High–Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Band gap and electronic structure of defects in the ternary nitride BP 3 N 6 : experiment and theory

Recent advances in methods to access nitride systems by a high-pressure high-temperature approach have made possible the one-step synthesis of mixed ternary non-metal nitrides. As a prerequisite to use in a practical device, it is important to understand important bulk electronic properties, such as the band gap, as well as characterizing the presence and effect of defects that are present. In this work, the novel ternary nitride BP 3 N 6 is studied using techniques sensitive to the partial electronic density of states, specifically X-ray absorption spectroscopy and X-ray emission spectroscopy. Complementary full-potential all-electron density functional theory (DFT) calculations allow important bulk electronic parameters, such as the band gap, to be elucidated. The band gap of BP 3 N 6 has been determined to be 3.9 ± 0.2 eV and 4.1 ± 0.4 eV at the B K- and N K-edges, respectively. This is close to a theoretical value of 4.3 eV predicted by the PBEsol exchange–correlation functional and considerably less than a value of 5.8 eV predicted by the modified Becke–Johnson exchange–correlation functional. X-Ray excited optical luminescence (XEOL) measurements are performed to interrogate the presence of point defects in this system. Together with DFT calculations, these measurements reveal the presence of nitrogen vacancies which lead to multiple mid-gap trap states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2021

Development and Characterization of Lightweight Durable Composite Conductor for Cables

Sustainable aviation in the form of electrified propulsion is likely to lead to an increase in the electrical assets contained within a single aircraft. As a result, it is desirable to design light weight conductor materials, thus reducing the payload of components like motor windings, low voltage signal cables, and transmission cables for data and power. One approach involves replacing pure Cu wiring with metalized CNT composites. This paper evaluates a framework for modeling overall conductivity and current sharing within such composites. Processing methods and parameters were refined. Select electroplated samples outperformed pure Cu in conductivity and had comparable ultimate tensile strengths. Tensile strengths are expected to improve with an additional densification step during processing. Acoustic emission data was used to predict the failure mechanism of the composite. Theories explaining improved intrinsic conductivity are discussed, with a focus on chemical and mechanical interactions at the Cu-CNT interface. These include Cu infiltration of CNT crevices, CNT oxidation, activity at defects in CNT walls, and the release of carbide-forming metals from CNT walls. Validating any or all these theories will require further work replicating data, collecting electron micrographs and conducting chemical analyses.

Metalized CNT↗

NASA NTRS1998

Characterization of PVT Grown ZnSe by Low Temperature Photoluminescence

ZnSe, a II-VI semiconductor with a large direct band gap of 2.7 eV at room temperature and 2.82 eV at 10 K, is considered a promising material for optoelectric applications in the blue-green region of the spectrum. Photoemitting devices and diode laser action has been demonstrated as a result of decades of research. A key issue in the development of II-VI semiconductors is the control of the concentration of the various impurities. The II-VI semiconductors seem to defy the effort of high level doping due to the well known self compensation of the donors and the acceptors. A good understanding of roles of the impurities and the behavior of the various intrinsic defects such as vacancies, interstitials and their complexes with impurities is necessary in the development and application of these materials. Persistent impurities such as Li and Cu have long played a central role in the photoelectronic properties of many II-VI compounds, particularly ZnSe. The shallow centers which may promote useful electrical conductivity are of particular interest. They contribute the richly structured near gap edge luminescence, containing weak to moderate phonon coupling and therefore very accessible information about the energy states of the different centers. Significance of those residual impurities which may contribute such centers in II-VI semiconductors must be fully appreciated before improved control of their electrical properties may be possible. Low temperature photoluminescence spectroscopy is an important source of information and a useful tool of characterization of II-VI semiconductors such as ZnSe. The low temperature photoluminescence spectrum of a ZnSe single crystal typically consists of a broad band emission peaking at 2.34 eV, known as the Cu-green band, and some very sharp lines near the band gap. These bands and lines are used to identify the impurity ingredients and the defects. The assessment of the quality of the crystal based on the photoluminescence analysis is then possible. In this report we present the characterization of a ZnSe single crystal as grown by the physical vapor transport method, with special intention paid to the possible effects of the gravitational field to the growth of the crystal.

Wang, Ling Jun↗

DOE OSTI2023

Anisotropic Excitons Reveal Local Spin Chain Directions in a van der Waals Antiferromagnet

A long‐standing pursuit in materials science is to identify suitable magnetic semiconductors for integrated information storage, processing, and transfer. Van der Waals magnets have brought forth new material candidates for this purpose. Recently, sharp exciton resonances in antiferromagnet NiPS 3 have been reported to correlate with magnetic order, that is, the exciton photoluminescence intensity diminishes above the Néel temperature. Here, it is found that the polarization of maximal exciton emission rotates locally, revealing three possible spin chain directions. This discovery establishes a new understanding of the antiferromagnet order hidden in previous neutron scattering and optical experiments. Furthermore, defect‐bound states are suggested as an alternative exciton formation mechanism that has yet to be explored in NiPS 3 . The supporting evidence includes chemical analysis, excitation power, and thickness dependent photoluminescence and first‐principles calculations. This mechanism for exciton formation is also consistent with the presence of strong phonon side bands. This study shows that anisotropic exciton photoluminescence can be used to read out local spin chain directions in antiferromagnets and realize multi‐functional devices via spin‐photon transduction.

36 MATERIALS SCIENCE↗

NASA NTRS1991

Characterization of Asymmetry in Magnetoacoustic Emission Burst by Numerical Processes

It has been well known that the pattern of the magnetoacoustic emission (MAE) burst observed during the sweep over one half-cycle of the hysteresis loop becomes asymmetric depending on the strength of the magnetic domain wall-defect interaction and the state of residual stresses in a ferromagnet. The ascending asymmetry due to the former has been observed at a very low frequency (.7 Hz) of applied AC magnetic field at a given amplitude. The descending asymmetry due to uniaxial compressive stress has been typically observed at the AC applied magnetic field frequency of 20 Hz. The physical interpretation of both types of asymmetry has been well established. It is, however, necessary to perform investigations of the dependence of asymmetry on externally controlled parameters such as the amplitude and frequency of the AC applied magnetic fields. The purpose of the present study is therefore to devise a mathematical means that describes the degree of asymmetry of the MAE burst and apply this scheme to investigate the AC magnetic field amplitude dependence of the asymmetry.

Namkung, M.↗

DOE OSTI2024

Gallium oxide semiconductor-based large volume ultrafast radiation hard spectroscopic scintillators

We report on the development of the first-ever inorganic radiation-hard moisture-insensitive large volume spectroscopic semiconductor-based scintillator with less than 2 ns decay time and light yields as high as 8000 ph/MeV. Despite extensive research into scintillator materials, the quest for an ideal scintillator combining ultrafast decay times (akin to BaF 2 and Yb-doped scintillators such as Lu 2 O 3 :Yb), high light yields (exceeding 2000 photons per MeV), spectroscopic capabilities, and exceptional radiation hardness remain unfulfilled. In this study, we demonstrate and report for the first time the viability of large-volume (up to 20 mm thickness) gallium oxide (β-Ga 2 O 3 ) semiconductor-based scintillators for applications requiring these properties. These β-Ga 2 O 3 scintillators were grown using the fast turnaround (~2 days) crucible-free optical float zone (FZ) technique. The high light yield and ultrafast decay time of these high-purity n-type semiconductors with free carrier concentration of 6 × 10 17 cm –3 are attributed to native defects, specifically oxygen vacancies (V O ) and gallium–oxygen vacancy pairs (V Ga –V O ), generated during optimized FZ growth. The ultrafast decay, along with high light yield, enables excellent timing resolution and high count rate detection for applications like time-of-flight positron emission tomography, physics experiments, and nuclear safety. The radiation hardness of these devices has been documented in a separate publication.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗