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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Carbazole-Based Hole-Transport Materials for High-Efficiency and Stable Perovskite Solar Cells

As organic–inorganic halide perovskite solar cells (PSCs) near commercialization, stability challenges during real-world conditions, such as durability at elevated temperatures, still need to be addressed. We have previously reported that doping of triarylamine-based hole-transport layers (HTLs) with a triarylamine-based radical cation salt (EHCz-3EtCz/EH44-ox) leads to enhanced PSC stability at elevated temperatures. While it was shown the radical cation dopant did not need to be identical to the HTL matrix, little was known about dopant exchange to realize the maximum impact on device-level properties (e.g., increase in low intrinsic conductivity, mobility, hydrophobic properties, ease of synthesis, and thermal stability). In this paper, we study the impact of dopant exchange among stable, low-cost, high-glass-transition temperature (Tg), and easily synthesized triarylamine-based HTL and radical triarylamine cation salts as dopants. Using EH44-ox as dopant leads to the improved device-level power conversion efficiency (PCE) for all HTL matrices assessed. Moreover, increasing the number of ethylhexyl chains from one to two per molecule and positioning these chains at the periphery rather than the core resulted in improved hydrophobicity. PSCs based on our HTL formulations have similar power conversion efficiencies (PCE) as those of PSCs based on commercially available HTLs while demonstrating greatly improved device-level stability at elevated temperatures.

14 SOLAR ENERGY↗
DOE OSTI2021

Manipulating the Crystallization Kinetics by Additive Engineering toward High-Efficient Photovoltaic Performance

Additive processing is proven to be an effective method to improve the efficiency and stability of perovskite solar cells; however, its intrinsic role in directing the crystallization pathway and thus morphology formation remains unknown. In situ grazing-incidence wide-angle x-ray scattering (GIWAXS) is applied to study the function of a 1,8-diiodooctane (DIO) additive in manipulating the crystallization behavior of perovskite thin films. It is seen that the DIO additive could induce multi-stage intermediate crystallization phases and increases the activation energy for nucleation and growth, which postpones the perovskite phase transformation time and broadens the transition zone. The elongated crystallization process affords improved perovskite thin film crystallinity and reduces defect density, which enables a longer carrier diffusion length. As a result, improved device efficiency, moisture, and thermal stability can be achieved. The following study provides a new prospective in understanding the additive function in perovskite thin film morphology control from fundamental parameters, indicating the importance of minor processing conditions in global property management toward high device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Temperature‐Dependent Crystallization in Two‐Step Perovskite Deposition Revealed by In Situ GIWAXS and Machine Learning‐Guided Analysis

The performance and stability of perovskite solar cells are strongly governed by the crystallization behavior of their active layer. In two-step sequential deposition, early-stage film formation plays a decisive role in determining final phase purity and device quality. Guided by a data-driven analysis of nearly 39 000 devices in the FAIR perovskite database, we identified solvent-mediated quenching and thermal processing as key variables affecting power conversion efficiency (PCE), particularly in two-step fabrication. Here, to investigate these effects in real time, we designed and implemented a custom-built, temperature-controlled spin-coating system, enabling precise thermal modulation during precursor deposition. Using this platform, we performed in situ GIWAXS measurements to study the crystallization dynamics of FA 0.5 MA 0.5 PbI 3 films over a temperature range of 30°C–90°C. Our results reveal a non-monotonic relationship between spin-coating temperature and α-phase formation, governed by the interplay between precursor interdiffusion, PbI 2 crystallinity, and δ-phase suppression. The custom thermal control enabled us to isolate and quantify these competing effects during the earliest stages of film formation, providing mechanistic insight into how spin-coating temperature governs both phase purity and kinetic pathways in two-step perovskite systems. Temperature-dependent SEM and photovoltaic device measurements further demonstrate that early-stage crystallization pathways directly translate into differences in morphology, charge-transport continuity, and device performance. These findings inform targeted strategies for optimizing deposition protocols to balance rapid nucleation, phase stability, and device performance.

Saadawy, Ahmed [King Fahd University of Petroleum ↗
DOE OSTI2020

Improving Low-Bandgap Tin–Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing

Low-bandgap Sn/Pb ABX 3 perovskites have reached photovoltaic power conversion efficiencies >20%, but they usually have poor stability due to the common use of acidic poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hole transport layers and A-site cation compositions containing methylammonium (MA). In this work, we develop a process to enable high-quality MA-free Sn/Pb perovskite films grown using a gas quenching process instead of the conventional antisolvents, which provides improved control of the film growth and eliminates wrinkling. Using this method in a device structure with poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) instead of PEDOT:PSS as the hole transport layer, devices can reach efficiencies up to 20% mppt at 0.06 cm 2 and up to 17.5% mppt at 1 cm 2 active area. With these improvements, the devices are characterized for thermal stability and show 80% of the initial power output remaining after 4000 h at 85 °C.

14 SOLAR ENERGY↗
DOE OSTI2026

Two-Dimensional Perovskite Single-Nanowire Photodetectors

High-performance microphotodetectors require materials that combine strong light–matter interaction, fast charge transport, and ambient stability. Here, we demonstrate single-nanowire devices based on the 2D perovskite (TPA3) 2 PbBr 4 , synthesized via a controlled slow-cooling self-assembly process that yields defect-minimized, anisotropic nanowires with smooth facets. These microphotodetectors exhibit ultralow dark currents (∼10 –15 A), high responsivity (up to 156 mA W –1 ), and exceptional specific detectivity (∼10 11 Jones) under near-UV (405 nm) illumination, with rise and fall times in the millisecond regime. The superior detectivity is primarily driven by the suppression of thermal noise through the material’s ultralow dark current, while the millisecond temporal response is governed by high-intensity trap-filling dynamics. The devices maintain stable operation over 4000 s of continuous on/off cycling and show remarkable ambient stability over weeks, attributed to dense crystal packing and robust organic cation layers. Furthermore, the influence of nanowire thickness on the charge collection efficiency is systematically elucidated through optical penetration depth analysis, highlighting design principles for optimizing low-dimensional perovskite photodetectors. This study introduces single 2D perovskite nanowires as a versatile platform for miniaturized, high-performance optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films

Two-dimensional polyimide covalent organic framework (2D PI-NT COF) films were constructed on indium tin oxide-coated glass substrates to fabricate two-terminal sandwiched resistive memory devices. The 2D PI-NT COF films condensated from the reaction between 4,4',4"-triaminotriphenylamine and naphthalene-1,4,5,8-tetracarboxylic dianhydride under solvothermal conditions demonstrated high crystallinity, good orientation preference, tunable thickness, and low surface roughness. The well-aligned electron-donor (triphenylamine unit) and -acceptor (naphthalene diimide unit) arrays rendered the 2D PI-NT COF films a promising candidate for electronic applications. The memory devices based on 2D PI-NT COF films exhibited a typical write-once-read-many-time resistive switching behavior under an operating voltage of +2.30 V on the positive scan and -2.64 V on the negative scan. A high ON/OFF current ratio (>10 6 for the positive scan and 10 4 -10 6 for the negative scan) and long-term retention time indicated the high fidelity, low error, and high stability of the resistive memory devices. The memory behavior was attributed to an electric field-induced intramolecular charge transfer in an ordered donor-acceptor system, which provided the effective charge-transfer channels for injected charge carriers. Furthermore, this work represents the first example that explores the resistive memory properties of 2D PI-COF films, shedding light on the potential application of 2D COFs as information storage media.

2D covalent organic framework film↗
DOE OSTI2022

Simultaneous measurements of unstable and stable Alfvén eigenmodes in JET

Here, we report the novel experimental observation of both unstable and stable toroidicity-induced Alfvén eigenmodes (TAEs) measured simultaneously in a JET tokamak plasma. The three-ion-heating scheme (D-DNBI-3He) is employed to accelerate deuterons to MeV energies, thereby destabilizing TAEs with toroidal mode numbers n = 3–5, each decreasing in mode amplitude. At the same time, the Alfvén eigenmode active diagnostic resonantly excites a stable n = 6 TAE with total normalized damping rate –γ/ω 0 ≈ 1%–4%. Hybrid kinetic-MHD modeling with codes NOVA-K and MEGA both find eigenmodes with similar frequencies, mode structures, and radial locations as in experiment. NOVA-K demonstrates good agreement with the n = 3, 4, and 6 TAEs, matching the damping rate of the n = 6 mode within uncertainties and identifying radiative damping as the dominant contribution. Improved agreement is found with MEGA for all modes: the unstable n = 3–5 and stable n = 2, 6 modes, with the latter two stabilized by higher intrinsic damping and lower fast ion drive, respectively. While some discrepancies remain to be resolved, this unique validation effort gives us confidence in TAE stability predictions for future fusion devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization

Abstract This work reports on an investigation of the optical feedback in an InAs/InGaAs passively mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant optical feedback condition, experiments demonstrate that the radio-frequency linewidth is narrowed whatever the bias voltage applied on the saturable absorber (SA) is; on the other hand, the effective linewidth enhancement factor of the device increases with the reverse bias voltage on the SA, hence it is observed that such an increase influences the mode-locking dynamic and the stability of device under optical feedback. This work gives insights for stabilizing epitaxial QD mode-locked lasers on silicon which is meaningful for their applications in future large-scale silicon electronic and photonic applications requiring low power consumption as well as for high-speed photonic analog-to-digital conversion, intrachip/interchip optical clock distribution and recovery.

Dong, Bozhang (ORCID:0000000158266723)↗
DOE OSTI2024

NSTX-U National Research Program: White Paper in Response to Call from FESAC Sub-Committee

Both scientific and technical innovation is needed for the realization of an attractive engineering solution for a timely and cost-effective Pilot Plant, the design and construction of which is the overarching recommendation of the FESAC Long Range Plan, and the 2021 NASEM Pilot Plant reports, which underpin the Bold Decadal Vision. The two most significant plasma physics gaps to close for a Compact Pilot Plant (CPP) are core confinement improvement and heat flux mitigation, neither of which have been closed in an integrated fashion for any planned fusion power production device. High core confinement and stability are essential for producing majority self-driven plasmas in CPPs with reduced size and auxiliary heating power requirements, with an improvement in confinement being the major driver for cost reduction of a CPP. The National Spherical Tokamak Experiment - Upgrade (NSTX-U) is a unique low aspect ratio research facility that will address the fundamental challenge of developing the science and technology basis for a CPP design that integrates high core and edge confinement with the ability to mitigate very high incident heat fluxes. NSTX-U capabilities will enable the high performance, already achieved on NSTX, to extend into physics regimes much closer to those anticipated in Spherical Tokamak (ST)-based CPPs. These confinement and stability properties will be assessed by a full complement of diagnostics and analysis tools, which will also aid in the development of the underlying theory and predictive models needed for further optimization. Both conventional and transformative heat flux mitigation methods, such as liquid lithium plasma-facing components, will be developed and tested in-situ in NSTX-U at incident heat fluxes of ~100 MW/m 2 , and will inform plans and reduce risk for a subsequent major upgrade to the device to fully heated, high-Z wall and full liquid lithium divertor capability, a technology that potentially could then be implemented on any magnetic confinement device at any aspect ratio. NSTX-U research is fully complementary to programs performed on other STs, nationally and internationally. Furthermore, NSTX-U research has a direct connection to the private sector by informing design choices for future power production facilities being developed by these companies. The NSTX-U program will operate as a national User Facility, with collaborating researchers, engineers, and graduate students from 19 outside institutions, and open to participation and experiments led by researchers from both public and private entities. The research program will advance workforce development through training of young scientists, engineers, and technicians, and it will also serve for further diagnostic innovation, especially for high heat flux and high-Z wall environments, and implementation of advanced artificial intelligence (AI) for plasma and heat flux control.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Reverse-Bias Resilience of Monolithic Perovskite/Silicon Tandem Solar Cells

Metal halide perovskites have rapidly enabled a range of high-performance photovoltaic technologies. However, catastrophic failure under reverse voltage bias poses a roadblock for their commercialization. In this work, we conduct a series of stress tests to compare the reverse-bias stability of perovskite single-junction, silicon single-junction, and monolithic perovskite/silicon tandem solar cells. We demonstrate that the tested perovskite/silicon tandem devices are considerably more resilient against reverse bias compared with perovskite single-junction devices. The origin of such improved stability stems from the low reverse-bias diode current of the silicon subcell. This translates to dropping most of the voltage over the silicon subcell, where such a favorable voltage distribution protects the perovskite subcell from reverse-bias-induced degradation. These results highlight that, compared with other perovskite technologies, monolithic perovskite/silicon tandems are at a higher technology readiness level in terms of tackling the reverse bias and partial shading challenges, which is a considerable advantage toward commercialization.

halide perovskite↗
DOE OSTI2019

Stabilization of a monolayer tellurene phase at CdTe interfaces

Two-dimensional (2D) materials provide a plethora of novel condensed matter physics and are the new playground in materials science, offering potentially vast applications. One of the critical hurdles for many 2D systems is the synthesis of these low-dimensional systems as well as the prediction and identification of new candidates. Herein, a self-assembly of a monolayer tellurene by bonding CdTe wafers is demonstrated for the first time. The conventional applications of wafer-bonding range from the production of microelectromechanical systems to the synthesis of lattice-mismatched multi-junction photovoltaics. Due to the heterogeneous materials that are typically employed, the bond-interface usually contains a thin amorphous layer or arrays of dislocations. Such an interface is thus itself inactive and in many cases has detrimental effects on the device. The new material phase stabilized in this work consists of an undulating monolayer of tellurium atoms covalently bonded to {111} Cd-terminated CdTe wafer surfaces. First-principles calculations and experimentally observed changes in the localized plasmon excitation energy indicate the clear rearrangement of the underlying band-structure suggesting a metallic character, bands showing linear dispersion, and a significant asymmetric spin-band splitting. The I–V characteristics show the presence of a highly conductive pathway that lowers the resistivity by three orders of magnitude, as compared to bulk CdTe, which can be attributed to the tellurium monolayer. The findings indicate that suitably chosen crystallographic wafer surfaces can act as structural templates allowing the production of exotic phases. Furthermore, the presently stabilized monolayer is an addition to the family of tellurene variants, providing new insights into the fundamental properties of this and other emerging 2D materials, while attracting attention to the unusual side of the wafer-bonding technology exemplified in this study.

14 SOLAR ENERGY↗
DOE OSTI2023

Molecular interactions that drive morphological and mechanical stabilities in organic solar cells

Morphological and mechanical stabilities of organic solar cells (OSCs) are of paramount importance to ensure long-lived devices. However, the fundamental drivers of these stability metrics and their competing relationship have yet to be well defined. Here, in this work, several high-performance polymers and small molecule acceptors (SMAs) are considered to assist in the development of a comprehensive view of the molecular drivers of, and interrelationships between, morphological and mechanical stabilities. We find that the SMAs drive much of the embrittlement and diffusion characteristics in the blend films. However, the heterointeraction of the SMA and polymer, probed through dynamic mechanical analysis, is a key contributing factor to the film toughness. The heterointeraction energy is ideally maximally negative (i.e., repulsive), deviating from the geometric mean of the homointeraction energy. These findings assist in introducing a framework to understand the active layer stability and highlight material properties that lead to morphologically stable and physically robust OSCs.

14 SOLAR ENERGY↗
DOE OSTI2022

Real-space observation of fluctuating antiferromagnetic domains

Magnetic domains play a fundamental role in physics of magnetism and its technological applications. Dynamics of antiferromagnetic domains is poorly understood, although antiferromagnets are expected to be extensively used in future electronic devices wherein it determines the stability and operational speed. Dynamics of antiferromagnets also features prominently in the studies of topological quantum matter. Real-space imaging of fluctuating antiferromagnetic domains is therefore highly desired but has never been demonstrated. We use coherent x-ray diffraction to obtain videos of fluctuating micrometer-scale antiferromagnetic domains in Ni 2 MnTeO 6 on time scales from 10 -1 to 10 3 s. In the collinear phase, thermally activated domain wall motion is observed in the vicinity of the Néel temperature. Unexpectedly, the fluctuations persist through the full range of the higher-temperature helical phase. These observations illustrate the high potential significance of the dynamic domain imaging in phase transition studies and in magnetic device research.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Elimination of the bias-stress effect in ligand-free quantum dot field-effect transistors

Field-effect transistors (FETs) made from colloidal quantum dot (QD) solids commonly suffer from current–voltage hysteresis caused by the bias-stress effect (BSE), which complicates fundamental studies of charge transport in QD solids and the use of QD FETs in electronics. Here, we show that the BSE can be eliminated in n-channel PbSe QD FETs by first removing the QD ligands with a dose of H 2 S gas and then infilling the QD films with alumina by atomic layer deposition (ALD). The H 2 S-treated, alumina-infilled FETs have stable, hysteresis-free device characteristics (total short-term stability), indefinite air stability (total long-term stability), and a high electron mobility of up to 14 cm 2 V −1 s −1 , making them attractive for QD circuitry and optoelectronic devices. The BSE-free devices are utilized to conclusively establish the dependence of the electron mobility on temperature and QD diameter. We demonstrate that the BSE in these devices is caused by both electron trapping at the QD surface and proton drift within the film. The H 2 S/alumina chemistry produces ligand-free PbSe/PbS/Al 2 O 3 interfaces that lack the traps that cause the electronic part of the BSE, while full alumina infilling stops the proton motion responsible for the ionic part of the BSE. In conclusion, our matrix engineering approach should aid efforts to eliminate the BSE, boost carrier mobilities, and improve charge transport in other types of nanocrystal solids.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Unveiling the Degradation Mechanism of High-Temperature Superconductor Bi 2 Sr 2 CaCu 2 O 8+δ in Water-Bearing Environments

We report the physical properties of copper oxide high-temperature superconductors have been studied extensively, such as its band structure, and doping effects of Bi 2 Sr 2 CaCu 2 O 8+δ (Bi-2212). However, some chemical-related properties of these superconductors are rarely reported, such as their stability in air. Here, we report experiments combined with ab initio calculations that address the effects of water in contact with Bi-2212. The evolution of Bi-2212 flake with exposure to water for different time intervals were tested and characterized by optical microscopy (OM), atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM) and electrical measurements. The thickness of Bi-2212 flakes is gradually decreased in water, and some thin flakes can be completely etched away after a few days. The stability of Bi-2212 in other solvents is also evaluated, including alcohol, acetone, HCl and KOH. The morphology of Bi-2212 flakes is relatively stable in organic solvents. However, the flakes are etched relatively quick in HCl and KOH, especially in acidic environment. Our results imply that hydrogen ion is primarily responsible for the deterioration of their properties. Both TEM and calculation results demonstrate that the atoms in Bi-O plane is relatively stable when compared to the inner atoms in Sr-O, Ca-O and Cu-O planes. This work contributes towards understanding the chemical stability of Bi-2212 superconducting device in environmental medium, which is important for both fundamental studies and practical applications of copper oxide high-temperature superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Grid regulation services for energy storage devices based on grid frequency

Disclosed herein are representative embodiments of methods, apparatus, and systems for charging and discharging an energy storage device connected to an electrical power distribution system. In one exemplary embodiment, a controller monitors electrical characteristics of an electrical power distribution system and provides an output to a bi-directional charger causing the charger to charge or discharge an energy storage device (e.g., a battery in a plug-in hybrid electric vehicle (PHEV)). The controller can help stabilize the electrical power distribution system by increasing the charging rate when there is excess power in the electrical power distribution system (e.g., when the frequency of an AC power grid exceeds an average value), or by discharging power from the energy storage device to stabilize the grid when there is a shortage of power in the electrical power distribution system (e.g., when the frequency of an AC power grid is below an average value).

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Dynamic Interaction of Grid-Forming and Grid-Following Inverters with Synchronous Generators in Hybrid Power Plants

As the integration of renewable energy resources such as wind and solar generation continues to grow, the use of hybrid power plants with both synchronous machines and power electronic inverters operating in parallel becomes more common. This paper studies the impact on small-signal stability for these pairs of devices, first as an isolated two-device system and then as part of a 9-bus test system. Each operational scenario was studied with both a grid-following inverter and a grid-forming inverter. In each scenario, the state variables associated with the synchronous generator's excitation system were found to be responsible for the inception of instability. These results underscore the importance of accurate modeling of excitation systems when modeling power systems with hybrid power plants.

hybrid power plant↗
DOE OSTI2024

High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD

Abstract This letter reports the demonstration of Aluminum nitride (AIN) Schottky barrier diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios of 10 6 –10 8 and excellent thermal stability from 298 to 623 K. The device Schottky barrier height increased from 0.89 to 1.85 eV, and the ideality factor decreased from 4.29 to 1.95 with increasing temperature, ascribed to the inhomogeneous metal/AlN interface. This work demonstrates the potential of AlN as an ultra-wide bandgap semiconductor for developing multi-kV AlN high-voltage and high-power devices.

Physics↗