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Report presents novel theoretical analysis of performance of passive, multiport power dividers like those used to distribute power to radiating elements of array antennas. Typically, unit cell of power-divider network is three- or four-port subnetwork with one port terminated, and subnetworks of network cascaded in multiple layers, so that insertion losses are of major concern.
The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.
The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.
Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.
X-57 is NASA’s first all electric aircraft that utilizes existing airframe of Tecnam 2006P GA aircraft integrated with new all electric power train. The objective of the project was to deliver high performing distributed electric propulsion system while developing US industry in the area of EAP. The project was divided into three distinct flight mods, each serving as a risk reduction efforts to final mod where full distributed power train with highly modified wing structure would be tested in flight. Flight weight, efficient power electronics are enablers for distributed, electric aircraft propulsion systems, and GRC team has developed high power and highly efficient SiC based converters for both cruise and high lift systems on the aircraft. Both controller’s development efforts demonstrate a means to achieve an in-the-nacelle controller with purely passive cooling while maintaining high efficiency. This paper describes the lessons learned on design, integration, and testing challenges that X-57 faced while developing these novel technologies.
The Deep Space Avionics (DSA) Project is developing a new generation of power system building blocks. Using application specific integrated circuits (ASICs) and power switching modules a scalable power system can be constructed for use on multiple deep space missions including future missions to Mars, comets, Jupiter and its moons. The key developments of the DSA power system effort are five power ASICs and a mod ule for power switching. These components enable a modular and scalab le design approach, which can result in a wide variety of power syste m architectures to meet diverse mission requirements and environments . Each component is radiation hardened to one megarad) total dose. The power switching module can be used for power distribution to regular spacecraft loads, to propulsion valves and actuation of pyrotechnic devices. The number of switching elements per load, pyrotechnic firin gs and valve drivers can be scaled depending on mission needs. Teleme try data is available from the switch module via an I2C data bus. The DSA power system components enable power management and distribution for a variety of power buses and power system architectures employing different types of energy storage and power sources. This paper will describe each power ASIC#s key performance characteristics as well a s recent prototype test results. The power switching module test results will be discussed and will demonstrate its versatility as a multip urpose switch. Finally, the combination of these components will illu strate some of the possible power system architectures achievable fro m small single string systems to large fully redundant systems.
STOL aircraft electric power variable frequency generation and high voltage DC distribution with secondary square wave AC distribution
Network reconfiguration has long been employed as a strategic approach to minimize power distribution system losses and effectively regulate voltage levels. Tap-changing voltage regulators are also critical for controlling bus voltages, especially in accommodating the increasing integration of distributed energy resources (DERs) with intermittent outputs. This paper introduces novel methodologies to address the challenges of dynamic reconfiguration and optimal tap setting in unbalanced three-phase distribution systems. We propose an approximated mixed-integer quadratically constrained program (MIQCP) to model dynamic reconfiguration, along with a pioneering formulation for voltage regulator (VR) tap-setting based on Special Ordered Set type 1 (SOS1). To mitigate computational complexity, we propose a physics-informed spatial-temporal graph convolutional network (STGCN) with an integrated link classifier. The proposed approach enables efficient solution generation by fixing specific variables in the MIQCP instance and solving the simplified sub-MIP using an MIP solver. Numerical studies demonstrate the superior prediction accuracy of our STGCN model compared to baseline neural network models, resulting in reduced DER curtailment and voltage deviation with shorter computation time.
The Space Station Module Power Management And Distribution (SSM/PMAD) automation test bed project was begun at NASA/Marshall Space Flight Center (MSFC) in the mid-1980s to develop an autonomous, user-supportive power management and distribution test bed simulating the Space Station Freedom Hab/Lab modules. As the test bed has matured, many new technologies and projects have been added. The author focuses on three primary areas. The first area is the overall accomplishments of the test bed itself. These include a much-improved user interface, a more efficient expert system scheduler, improved communication among the three expert systems, and initial work on adding intermediate levels of autonomy. The second area is the addition of a more realistic power source to the SSM/PMAD test bed; this project is called the Large Autonomous Spacecraft Electrical Power System (LASEPS). The third area is the completion of a virtual link between the SSM/PMAD test bed at MSFC and the Autonomous Power Expert at Lewis Research Center.
Solid state remote power controllers can be applied to any dc power system up to 120 Vdc and distribute power up to 3.6 kW per hour. Devices have demonstrated total electrical efficiencies of 98.5 percent to 99.0 percent at rated load currents.
Multiple beam antenna systems for advanced communication satellites operating in the 30/20 GHz frequency bands (30 GHz uplink, 20 GHz downlink) were developed. Up to twenty 0.3 deg HPBW fixed spot beams and six 0.3 deg HPBW scanning spot beams will be required. Array-fed dual reflector antenna systems in which monolithic microwave integrated circuit (MMIC) phase shift and amplifier modules are used with each radiating element of the feed array for beam pointing and power gain were developed. The feasibility of distributed power amplification and beam pointing with MMIC modules in the elements of an array and to develop a data base for future development were demonstrated. The technical discussion centers around the potential advantages of ""monolithic'' antennas for specific applications as compared to systems using high powered TWT's. These include: reduced losses in the beam forming network; advantage of space combining and graceful degradation; dynamic control of beam pointing and illumination contour; and possibilities for cost and weight reduction.
Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.
Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.
Power series expansion of electron velocity distribution function, computing harmonic electric current densities in plasma
An overview of space power management and distribution (PMAD) is provided which encompasses historical and current technology trends. The PMAD components discussed include power source control, energy storage control, and load power processing electronic equipment. The status of distribution equipment comprised of rotary joints and power switchgear is evaluated based on power level trends in the public, military, and commercial sectors. Component level technology thrusts, as driven by perceived system level trends, are compared to technology status of piece-parts such as power semiconductors, capacitors, and magnetics to determine critical barriers.
As power levels of spacecraft rise to the 50 to 100 kW range, it becomes apparent that low voltage (28 V) dc power distribution and management systems will not operate efficiently at these higher power levels. The concept of transforming a solar array voltage at 150 V dc into a 1000 V ac distribution system operating at 20 kHz is examined. The transformation is accomplished with series-resonant inverter by using a rotary transformer to isolate the solar array from the spacecraft. The power can then be distributed in any desired method such as three phase delta to delta. The distribution voltage can be easily transformed to any desired load voltage and operating frequency. The reasons for the voltage limitations on the solar array due to plasma interactions and the many advantages of a high voltage, high frequency at distribution system are discussed.
Compared to existing systems, high frequency ac power provides higher efficiency, lower cost, and improved safety benefits. The 20 kHz power system has exceptional flexibility, is inherently user friendly, and is compatible with all types of energy sources; photovoltaic, solar dynamic, rotating machines and nuclear. A 25 kW, 20 kHz ac power distribution system testbed was recently (1986) developed. The testbed possesses maximum flexibility, versatility, and transparency to user technology while maintaining high efficiency, low mass, and reduced volume. Several aspects of the 20 kHz power management and distribution (PMAD) system that have particular benefits for a nuclear power Space Station are discussed.
The Aeronautical Mobile Airport Communications System (AeroMACS), which is based upon the IEEE 802.16e mobile wireless standard, is expected to be implemented in the 5091 to 5150 MHz frequency band. As this band is also occupied by Mobile Satellite Service feeder uplinks, AeroMACS must be designed to avoid interference with this incumbent service. The aspects of AeroMACS operation that present potential interference are under analysis in order to enable the definition of standards that assure that such interference will be avoided. In this study, the cumulative interference power distribution at low Earth orbit from transmitters at global airports was simulated with the Visualyse Professional software. The dependence of the interference power on antenna distribution, gain patterns, duty cycle, and antenna tilt was simulated. As a function of these parameters, the simulation results are presented in terms of the limitations on transmitter power from global airports required to maintain the cumulative interference power under the established threshold.