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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Orbital hybridisation effects in B2 phase Cr doped Co 2 MnAl

Here we investigate here the magnetic, transport, local structural and electronic properties of Co 2 Mn 1−x Cr x Al (x = 0, 0.05, 0.1 and 0.2). Our results show that all the compounds stabilise in B2 phase and are ferromagnets. The results reveal disorder at the structural and magnetic levels. X-ray absorption near edge structure (XANES) analysis reveal signature of antisite disorder between Mn and Al atoms with equal ratio. The electronic structure calculations suggest enhancement in the half metallicity, localisation of electrons at the Fermi level and an increment in density of states with doping. The combined results of electronic structure calculations and XANES studies suggest transfer of electrons to the Co site. The results of high temperature resistivity measurements suggest the conduction electrons are undergoing transition from delocalisation to weak localisation to activated behaviour with Cr doping. The extended x-ray absorption spectroscopic analysis shows that the local structure around Mn atom is different from the global structure as obtained from the x-ray diffraction results. The behaviour of the edge region is in line with the trend as obtained from the compositional analysis. We observe link between the hybridisation of 3d like states at the Mn, Cr sites with that at the Co site and the transport properties. This could help in understanding the unusual decrement in the lattice parameter with doping. These results reveal the role of local structure in understanding the physical properties of such systems.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Effects of the next-nearest-neighbor hopping on the low-dimensional Hubbard model: ferromagnetism, antiferromagnetism, and superconductivity

The Hubbard model has attracted considerable interest due to its prototypical role in describing strongly interacting electronic systems, such as high-critical-temperature superconductors as well as many novel quantum materials. By introducing next-nearest-neighbor (NNN) hoppings to the Hubbard model, the phase diagram becomes richer, and fascinating phenomena arise in both, one-dimensional chains and square lattices, such as: antiferromagnetism, ferromagnetism, superconductivity (SC), as well as charge orders, among others. Moreover, NNN hoppings play a fundamental role in understanding effects of doping on magnetism and pairing orders in strongly interacting regimes. In this article, we review the recent progress in understanding the different competing phases of this model in one and two dimensions from a computational perspective. In conclusion, we comment on the pressing technical challenges, illustrate the controversial results concerning the emergence of the SC phase, and conclude with our perspectives on future explorations.

Hubbard model↗
DOE OSTI2022

Inverse metal-assisted chemical etching of germanium with gold and hydrogen peroxide

Abstract Metal-assisted chemical etching (MACE) is a flexible technique for texturing the surface of semiconductors. In this work, we study the spatial variation of the etch profile, the effect of angular orientation relative to the crystallographic planes, and the effect of doping type. We employ gold in direct contact with germanium as the metal catalyst, and dilute hydrogen peroxide solution as the chemical etchant. With this catalyst-etchant combination, we observe inverse-MACE, where the area directly under gold is not etched, but the neighboring, exposed germanium experiences enhanced etching. This enhancement in etching decays exponentially with the lateral distance from the gold structure. An empirical formula for the gold-enhanced etching depth as a function of lateral distance from the edge of the gold film is extracted from the experimentally measured etch profiles. The lateral range of enhanced etching is approximately 10–20 μ m and is independent of etchant concentration. At length scales beyond a few microns, the etching enhancement is independent of the orientation with respect to the germanium crystallographic planes. The etch rate as a function of etchant concentration follows a power law with exponent smaller than 1. The observed etch rates and profiles are independent of whether the germanium substrate is n-type, p-type, or nearly intrinsic.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Giant Magnetic and Optical Anisotropy in Cerium-Substituted M-Type Strontium Hexaferrite Driven by $4f$ Electrons

By performing density-functional calculations, we find a giant magnetocrystalline anisotropy (MCA) constant in abundant element cerium $\mathrm{Ce}$ substituted M-type hexaferrite, in the energetically favorable strontium site, assisted by a quantum confined electron transfer from $\mathrm{Ce}$ to a specific iron $\mathrm{2a}$ site. Remarkably, the calculated electronic structure shows that the electron transfer leads to the formation of $\mathrm{Ce}^{3+}$ and $\mathrm{Fe}^{2+}$ at the $\mathrm{2a}$ site producing an occupied $\mathrm{Ce}$$(4f^1)$ state below the Fermi level that adds a significant contribution to MCA and magnetic moment. A half $\mathrm{Ce}$ substitution forms a metallic state, while a full substitution retains the semiconducting state of the strontium hexaferrite (host). In the latter, the band gap is reduced due to the formation of charge-transferred states in the gap region of the host. The optical absorption coefficient shows an enhanced anisotropy between light polarization in parallel and perpendicular directions. Calculated formation energies, including the analysis of probable competing phases, and elastic constants confirm that both compositions are chemically and mechanically stable. With successful synthesis, the $\mathrm{Ce}$ hexaferrite can be an alternative high-performing critical-element-free permanent magnet material adapted for use in devices such as automotive traction drive motors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

High critical field superconductivity at ambient pressure in MoB 2 stabilized in the P6/mmm structure via Nb substitution

Recently it was discovered that, under elevated pressures, MoB 2 exhibits superconductivity at a critical temperature T c as high as 32 K. The superconductivity appears to develop following a pressure-induced structural transition from the ambient pressure $\text{R}\bar{3}$⁢m structure to an MgB 2 -like P6/mmm structure. This suggests that remarkably high T c values among diborides are not restricted to MgB 2 as previously appeared to be the case, and that similarly high T c values may occur in other diborides if they can be coerced into the MgB 2 structure. In this paper, we show that density functional theory calculations indicate that phonon free energy stabilizes the P6/mmm structure over the $\text{R}\bar{3}$⁢m at high temperatures across the Nb 1–x ⁢Mo x B 2 series. X-ray diffraction confirms that the synthesized Nb-substituted MoB 2 adopts the MgB 2 crystal structure. Finally, high magnetic field electrical resistivity measurements and specific heat measurements demonstrate that Nb x ⁢Mo 1–x⁢ B 2 exhibits superconductivity with T c as high as 8 K and critical fields approaching 6 T.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Random-exchange Heisenberg behavior in the electron-doped quasi-one-dimensional spin-1 chain compound AgVP 2 ⁢S 6

Recent theoretical work suggests that a pair-density wave superconducting state can be realized by doping a one-dimensional spin-1 chain. Here, we report the physical properties of single crystals of Mg x Ag 1–x VP 2 S 6 [x = 0, x = 0.017(6), x = 0.067(8), and 0.098(11)] prepared by solid-state synthesis. Single-crystal x-ray-diffraction measurements confirm that Mg 2+ is substituting for Ag + to electron dope the V 3+ zigzag chains. Magnetization measurements reveal that electron doping breaks up the V 3+ chains, resulting in unpaired spins at the chain ends. The Mg x Ag 1–x VP 2 S 6 series is consistent with random-exchange Heisenberg antiferromagnetic chain behavior and can be well described by the exchange-coupled pair model at low temperatures. As a result, transport measurements show Mg x Ag 1–x VP 2 S 6 remains insulating in the range 0 ≤ x ≤ 0.098(11), with the band gap decreasing to ~ 0.2 eV at x = 0.098(11).

1-dimensional spin chains↗
DOE OSTI2023

Prevailing Charge Order in Overdoped La 2 – x Sr x CuO 4 beyond the Superconducting Dome

The extremely overdoped cuprates are generally considered to be Fermi liquid metals without exotic orders, whereas the underdoped cuprates harbor intertwined states. Contrary to this conventional wisdom, using Cu L 3 -edge and O K-edge resonant x-ray scattering, we reveal a charge order (CO) correlation in overdoped La 2–x⁢ Sr x ⁢CuO 4 (0.35 ≤ x ≤0.6) beyond the superconducting dome. This CO has a periodicity of ~6 lattice units with correlation lengths of ~20 lattice units. It shows similar in-plane momentum and polarization dependence and dispersive excitations as the CO of underdoped cuprates, but its maximum intensity differs along the c direction and persists up to 300 K. This CO correlation cannot be explained by the Fermi surface instability and its origin remains to be understood. Finally, our results suggest that CO is prevailing in the overdoped metallic regime and requires a reassessment of the picture of overdoped cuprates as weakly correlated Fermi liquids.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Evolution of the Magnetic Excitations in Electron-Doped La 2 - x Ce x CuO 4

Here we investigated the high energy spin excitations in electron-doped La 2-x Ce x CuO 4 , a cuprate superconductor, by resonant inelastic x-ray scattering (RIXS) measurements. Efforts were paid to disentangle the paramagnon signal from non-spin-flip spectral weight mixing in the RIXS spectrum at Q ∥ =(0.6π,0) and (0.9π,0) along the (1 0) direction. Our results show that, for doping level x from 0.07 to 0.185, the variation of the paramagnon excitation energy is marginal. We discuss the implication of our results in connection with the evolution of the electron correlation strength in this system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Metallization and spin fluctuations in Cu-doped lead apatite

An electronic structure and magnetic properties analysis of the recently proposed Cu-doped lead apatite is performed. Here, we show that electronic structures of differently Cu-substituted structures are characterized by localized molecular Cu-O bands at or near the Fermi level. The Cu substitutions can happen at both Pb1 and Pb2 sites, leading to metallic and semiconducting systems differently. The electronic systems in these bands are highly unstable magnetically and form clusters of rigidly ferromagnetically coupled magnetic moments on Cu and neighboring oxygen atoms with a total moment of about 1µ B . The ground state of uniformly Cu-doped lead apatite appears to be magnetic and semiconducting. The nonuniform distribution of two Cu atoms at the nearest Pb2 sites leads to an antiferromagnetic semiconducting state with formation energy close to uniformly distributed Cu configurations. The inclusion of quantum spin fluctuations confirms the stability of magnetic Cu-O clusters. Our calculations revealed the absence of the long-range magnetic order between uniformly distributed Cu-O clusters, creating the spin glass type of system.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Charge trapping at Al/Al 2 ⁢O 3 interface facilitates hydrogen-induced superabundant metal vacancy formation

Hydrogen is a ubiquitous impurity that deteriorates the metal/oxide interface, causing challenges such as current leakage and blistering. Here, in this work, we uncover the mechanisms behind hydrogen-induced damage at the prototypical Al/A⁢l 2 ⁢O 3 interface. The precursor that we identify is charge trapping at the interface, which facilitates hydrogen segregation to the interface plane as H – . Presence of hydrogen increases aluminum vacancy concentration at the interfacial metal and oxide planes. Each Al vacancy can trap multiple hydrogen atoms. As a result, the interfacial aluminum vacancy and hydrogen concentrations increase by orders of magnitude. Additionally, hydrogen behaves as an n-type dopant and increases electronic conductivity at the oxide layer adjacent to the interface by forming H + , and the [V Al –H] complex is the predominant defect at this layer. These findings provide the precursor mechanisms of hydrogen-induced damage at the metal-oxide interfaces and have implications for advancing Al/A⁢l 2 ⁢O 3 –based coatings and electronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

From Design to Device: Challenges and Opportunities in Computational Discovery of p -Type Transparent Conductors

A high-performance p -type transparent conductor (TC) does not yet exist but could lead to advances in a wide range of optoelectronic applications and enable new architectures for, e.g., next-generation photovoltaic (PV) devices. High-throughput computational material screenings have been a promising approach to filter databases and identify new p -type TC candidates and some of these predictions have been experimentally validated. However, most of these predicted candidates do not have experimentally achieved properties on par with n -type TCs used in solar cells and therefore have not yet been used in commercial devices. Thus, there is still a significant divide between transforming predictions into results that are actually achievable in the laboratory and an even greater lag in scaling predicted materials into functional devices. In this perspective, we outline some of the major disconnects in this materials discovery process—from scaling computational predictions into synthesizable crystals and thin films in the laboratory to scaling laboratory-grown films into real-world solar devices—and share insights to inform future strategies for TC discovery and design. Published by the American Physical Society 2024

14 SOLAR ENERGY↗
DOE OSTI2022

Water Formation Reaction under Interfacial Confinement: Al0.25Si0.75O2 on O-Ru(0001)

Confined nanosized spaces at the interface between a metal and a seemingly inert material, such as a silicate, have recently been shown to influence the chemistry at the metal surface. In prior work, we observed that a bilayer (BL) silica on Ru(0001) can change the reaction pathway of the water formation reaction (WFR) near room temperature when compared to the bare metal. In this work, we looked at the effect of doping the silicate with Al, resulting in a stoichiometry of Al0.25Si0.75O2. We investigated the kinetics of WFR at elevated H2 pressures and various temperatures under interfacial confinement using ambient pressure X-ray photoelectron spectroscopy. The apparent activation energy was lower than that on bare Ru(0001) but higher than that on the BL-silica/Ru(0001). The apparent reaction order with respect to H2 was also determined. The increased residence time of water at the surface, resulting from the presence of the BL-aluminosilicate (and its subsequent electrostatic stabilization), favors the so-called disproportionation reaction pathway (*H2O + *O ↔ 2 *OH), but with a higher energy barrier than for pure BL-silica.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Sensor Distortion Effects in Photon Monte Carlo Simulations

We present a detailed method to simulating sensor distortions using a photon and electron Monte Carlo method. We use three-dimensional electrostatic simulations to parameterize the perturbed electric field profile for nonideal sensor details. We follow the conversion of simulated photons, and the subsequent response of the converted electrons to the electric field pattern. These nonideal sensor details can be implemented efficiently in a Monte Carlo approach. We demonstrate that the nonideal sensor distortions have a variety of observable consequence including the modification of the astrometric pattern; the distortion of the electron diffusion size and shape; and the distortion of flats. We show analytic validation of the diffusion physics, reproduce two kinds of edge distortion, and show qualitative validation of field-free regions, lithography errors, and fringing. We also demonstrate that there are two related effects of doping variation having different observable consequences. We show that field distortions from accumulated electrons lead to intensity-dependent point-spread functions and the sublinear variance in flats. The method is implemented in the Photon Simulator and the code is publicly available.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1986

Behavior of inversion layers in 3C silicon carbide

A study on the field-induced surface-charge region in 3C silicon carbide (SiC) using 1 MHz capacitance-voltage (C-V) measurements at room temperature is here reported. A double column mercury probe was used on oxidized SiC substrates to form metal-oxide-semiconductor (MOS) structures. These structures were characterized in terms of the substrate doping profile, effective fixed oxide charge, and interface trap density. A distinctive feature of the MOS C-V curves from accumulation to inversion is that after going into deep depletion the capacitance rises to its equilibrium inversion level during the voltage sweep. Capacitance transient measurements indicate that the minority-carrier generation occurs at the SiO2/SiC interface.

Avila, R. E.↗
NASA NTRS1987

Microwave performance of InAlAs/InGaAs/InP MODFET's

Modulation-doped InAlAs/InGaAs/InP structures were grown by molecular beam epitaxy and fabricated into FETs with excellent RF gain performance. The intrinsic transconductance was about 400 mS/mm at 300 K. Current gain cutoff frequencies of up to 26.5 GHz were obtained in 1-micron gate devices. Extremely small S12 and large S21 led to a very large F(max) of 62 GHz. These results represent the best reported figures for 1-micron devices in this material system, and slightly better than those obtained in recently developed pseudomorphic modulation-doped field effect transistors.

Peng, C. K.↗
NASA NTRS1988

The effect of Al2O3, CaO, Cr2O3 and MgO on devitrification of silica

The effect of doping on devitrification of vitreous silica was studied at 1100, 1200, and 1300 C. Dispersion of dopants on a molecular scale was accomplished via a sol-gel technique. All dopants accelerated the devitrification of silica but to different degrees. The most active was CaO followed by MgO, Al2O3, and Cr2O3. Pure silica and silica containing Cr2O3 and Al2O3 devitrified to alpha-cristobalite only, whereas silica doped with CaO and MgO produced alpha-quartz and alpha-cristobalite. It appears that prolonged heat treatment would cause alpha-quartz to transform to alpha-cristobalite.

Zaplatynsky, Isidor↗