Modified optical-potential approach to low- energy electron-helium scattering.
Low energy electron-helium atom scattering, using formal optical potential in variational expression for scattering phase shifts
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Theoretical models for electron energy relaxation in the lower ionosphere
Elastic collisions and rotation inelastic collisions involving quadrupole molecular transitions are important in energy relaxation of electrons in molecular gases. It has been customary in studying the cooling of electrons in a plasma heated by high-frequency waves to characterize this relaxation by the ionospheric G factor. The G factor is first defined in a fundamental way by use of kinetic theory. Then present models for theoretical cross sections for electron collision with O2 and N2 are used to derive expressions for the G factor in the lower ionosphere. Two models are considered: one uses Gerjuoy-Stein models for both N2 and O2; the other uses a Gerjuoy-Stein model for N2 and a Geltman-Takayanaki model for O2. Neither O2 model has been definitely established experimentally. It is found that temperature dependence of G is critically dependent on the O2 model.
Hagenbuch, K. M.↗
Cross sections for direct and dissociative ionization of NH3 and CS2 by electron impact
A crossed electron beam-molecular beam collision geometry is used to measure cross sections for the production of positive ions by electron impact on NH3 and CS2. Ionization cross-section data for NH3 and the values of various cross sections are presented, as well as ionization efficiency curves for CS2. Considerable differences are found between the various results on NH3. The present values are close to the data of Djuric et al. (1981). The semiempirical calculations of Hare and Meath (1987) differ considerably in the absolute values of cross sections. Discrepancies were observed in comparisons of cross sections of other fragment ions resulting from the ionization and dissociate ionization of NH3.
Rao, M. V. V. S.↗
Production of carbon monoxide by charged particle deposition.
Recent studies of electron energy deposition in CO2 and CO based upon a large set of electron impact cross sections are utilized to estimate the telluric CO directly produced by various charged-particle deposition mechanisms. The mechanisms considered are (1) lightning, (2) cloud coronal discharges, (3) background radioactivity, (4) natural electrostatic discharges, (5) photoelectrons in the ionosphere, (6) auroral electrons, (7) auroral protons, (8) cosmic rays, and (9) solar wind. 'Ball park' estimates of the global CO production by each of these mechanisms are given. Apart from mechanisms 1, 2, and 5, all CO production mechanisms are estimated to be small compared to artificial sources. If, as appears to be the case, the hot oxygen atoms and ions and other atomic species immediately produced by these three charged-particle deposition mechanisms react rapidly with CO2 to produce CO, these mechanisms can readily lead to CO production levels in the multimegaton-per-year range.
Green, A. E. S.↗
Titanium in silicon as a deep level impurity
Titanium inserted in silicon by diffusion or during Czochralski ingot growth is electrically active to a concentration level of about 4 x 10 to the 14th per cu cm. It is reported that Hall measurements after diffusion show conversion of lightly doped p-type Si to n-type due to a Ti donor level at E sub c -0.22 eV. In addition, in DLTS measurements of n(+)p structures this level shows as an electron (minority carrier) trap at E sub c -0.26 eV with an electron capture cross section of about 3 x 10 to the -15th per sq cm at 300 K. Finally, a Ti electrically active concentration of about 1.35 x 10 to the 13th per cu cm in p type Si results in a minority carrier (electron) lifetime of 50 nsec at 300 K.
Chen, J.-W.↗
Study of electronic properties in proton- and electron-irradiated GaAlAs and GaAs solar cell materials
Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and the deep level transient spectroscopy methods were employed to study defect properties in the proton-irradiated n-GaAs materials. Defect energy levels, thermal emission rates, and capture cross sections of electrons as well as trap densities were deduced from these measurements and the results are presented. Correlations between the measured defect parameters and the dark I-V characteristics of the n-GaAs Schottky barrier diodes are also discussed. Defect energy levels (i.e., electron traps) determined are also compared with published data in order to identify their physical origins.
Li, S. S.↗
Radiation absorption by the C2 band systems for Jupiter entry conditions
Revised values of the absorption cross sections for seven electronic band systems of C2 have been calculated using recently published experimental data for the electronic transition moments. Using these revised C2 cross section values, computations were made for the radiating flow field over a Jupiter entry probe with coupled ablation injection from a carbon-phenolic heat shield. Results are presented which show that radiation absorption within the ablation layer for the spectral range of 4 to 6 eV is less than that predicted using previous C2 absorption cross section values. The effect of the reduced radiation absorption by the C2 molecule is an increase in the radiative heating rates and ablation mass loss rates for the Jupiter entry conditions considered in the study.
Sutton, K.↗
s-wave threshold in electron attachment - Results in 2-C4F6 and CFCl3 at ultra-low electron energies
Electron attachment lineshapes and cross sections are reported for the processes 2-C4F6(-)/2-C4F6 and Cl(-)/CFCl3 at electron energies of 0-120 and 0-140 meV, and at resolutions of 6 and 7 meV (FWHM), respectively. As in previous measurements in CCl4 and SF6, the results show resolution-limited narrow structure in the cross section at electron energies below 15 meV. This structure arises from the divergence of the s-wave cross section in the limit of zero electron energy. Comparisons are given with swarm-measured results, and with collisional ionization (high-Rydberg attachment) data in this energy range.
Chutjian, A.↗
Cross section for production of low-energy electron-positron pairs by relativistic heavy ions
Starting with the lowest-order unscreened QED matrix element for electron-positron pair production by heavy charged particles, the paper calculates the cross section for this process differential in all independent variables and valid for all pair energies small compared to the incident particle energy. Integration over the possible emission angles of one of the pair members gives an expression that is valid for low-energy pairs that can be compared with previous work based on the Weizsaecker-Williams method. Integration over the possible angles of the other pair member then yields an expression identical to one derived by Racah. The high energy-transfer limit of the expression for the cross section integrated over electron and positron angles is found to be identical to that of Kelner in the unscreened case.
Eby, P. B.↗
Ground testing in a simulated auroral environment
Shuttle polar orbit missions are being planned in which astronaut extravehicular activities (EVA) will eventually include external operations or repair and refurbishment of satellites. Recent satellite data and model calculations show that significant spacecraft charging and differential charging occurs in that environment and could endanger equipment and personnel involved in the EVA. These spacecraft charging events take place in response to an intense flux of high energy electrons accompanied by a large drop in the ambient plasma density. The extent of which the auroral environment can be simulated in a large vacuum chamber are determined so that conditions which lead to significant charging and discharging may be observed and controlled. A large chamber would be required in order to simulate the effects of an aurora-like, large cross-section, energetic electron precipitation on a target system the size of an astronaut with a life support system. The precipitating electrons can be simulated with an array of multipactor sources and the background ionization produced by the beam can be limited to the range of the auroral density if the chamber pressure is not significantly above 1 x .000001 Torr. Some small chamber work has shown that the plasma in the beam will diffuse radially at a rate determined by the Bohm diffusion coefficient.
Mcintyre, Bernard↗
Mass Spectrometric and Langmuir Probe Measurements in Inductively Coupled Plasmas in Ar, CHF3/Ar and CHF3/Ar/O2 Mixtures
Absolute fluxes and energy distributions of ions in inductively coupled plasmas of Ar, CHF3/Ar, and CHF3/Ar/O2 have been measured. These plasmas were generated in a Gaseous Electronics Conference (GEC) cell modified for inductive coupling at pressures 10-50 mTorr and 100-300 W of 13.56 MHz radio frequency (RF) power in various feedgas mixtures. In pure Ar plasmas, the Ar(+) flux increases linearly with pressure as well as RF-power. Total ion flux in CHF3 mixtures decreases with increase in pressure and also CHF3 concentration. Relative ion fluxes observed in the present studies are analyzed with the help of available cross sections for electron impact ionization and charge-exchange ion-molecule reactions. Measurements of plasma potential, electron and ion number densities, electron energy distribution function, and mean electron energy have also been made in the center of the plasma with a RF compensated Langmuir probe. Plasma potential values are compared with the mean ion energies determined from the measured ion energy distributions and are consistent. Electron temperature, plasma potential, and mean ion energy vary inversely with pressure, but increase with CHF3 content in the mixture.
Kim, J. S.↗
Electron scattering distributions as a probe of adsorbate orientation - CO and N2
The differential cross section for elastic electron scattering by adsorbed CO and N2 is calculated. The dependence of this cross section on the azimuthal angle of detection depends on the molecular orientation and can be used to differentiate between a molecule lying flat on the surface, a tilted molecule, and an upright one. For molecules lying flat on the surface, the orientation of the molecular axis and of the C and O atoms with respect to the plane of incidence of the electron can be determined.
Nagano, S.↗
Molecular processes in a high temperature shock layer
The development of techniques for the calculation of electron capture widths, electronic wave functions, cross sections and rates needed for the description of the dissociative recombination (DR) of molecular ions with electrons were described. The cross sections and rates were calculated by using harmonic oscillator wave functions for the ion and a delta function approximation for the continuum vibrational wave function in the repulsive dissociative channel. In order to obtain DR cross sections of quantitative accuracy, a computer program which solves the one dimensional nuclear motion wave equation was revised to calculate the cross sections and rates. The program and the new results are described. Included is a discussion of large windows found in the dissociative recombination cross sections from excited ion vibrational levels. These windows have not been previously reported in the literature. The magnitude of the DR cross sections for several dissociative routes are sensitive to the location of the crossing of the neutral and ion potential curves. Studies of the effects of basis set and CI wave function size on vertical excitation energies are described. Preliminary studies on N2 and O2 using large scale wave functions are also reported.
Guberman, S. L.↗
Excitation of the Werner bands of H2 by electron impact
Absolute cross sections for the excitation of the H2 Werner band system were measured from energy threshold to 300 eV for electron impact on H2. The bands were observed in emission in the wavelength region 1100A to 1250A. The measured cross sections were compared with published transition probabilities, leading to the conclusion that the Werner bands are suitable as the basis for a relative spectral response calibration only when the bands are observed under sufficiently high resolution. The effect of the perturbation between the C 1Pi u and B 1 Sigma-u states of the hydrogen molecule was clearly observed in anomalies in the rotational intensity distribution in bands of the (3 v '') progression.
Stone, E. J.↗
Electron excitation of the H2(a 3Sigma(g)(+) - b 3Sigma(u)(+)) continuum in the vacuum ultraviolet
The electron excitation function for the H2(a 3Sigma(g)(+) - b 3Sigma(u)(+)) continuum emission has been measured from 11 to 30 eV at 195.0 nm. The emission cross, section data have been combined with electron energy loss cross section measurements to extend the experimental data to 60 eV. The excitation cross section has been estimated by normalizing the data to the electron energy loss cross section at 20 eV and using a model to account for emission from the entire band system. The spin forbidden excitation of the a 3Sigma(g)(+) state is a major dissociative channel of H2 at low energy with a peak cross section of 1.7 +/- 0.85 x 10 exp -17 sq cm at 15.5 eV. The FWHM of the cross section is 7 eV. The high energy dependence of the cross section has a rapid 1/E-cubed fall off with electron energy, E, above 50 eV. A modified Born approximation analysis was applied to the data to provide an analytic model.
Ajello, J. M.↗
UV studies of electron impact excitation of CS2
The first measurements of emission cross sections of CS2 by electron impact over the wavelength interval 110-510 nm are reported. Absolute emission cross sections are obtained at 100 eV for all spectral features observed in this interval. Emission cross sections as a function of electron energy (0-125 eV) are reported for several of the principal electronic transitions.
Ajello, J. M.↗
Coating MCPs with AlN and GaN
A development effort underway at the time of reporting the information for this article is devoted to increasing the sensitivity of microchannel plates (MCPs) as detectors of photons and ions by coating the MCPs with nitrides of elements in period III of the periodic table. Conventional MCPs are relatively insensitive to slowly moving, large-mass ions for example, ions of biomolecules under analysis in mass spectrometers. The idea underlying this development is to coat an MCP to reduce its work function (decrease its electron affinity) in order to increase both (1) the emission of electrons in response to impingement of low-energy, large-mass ions and (2) the multiplying effect of secondary electron emission. Of particular interest as coating materials having appropriately low or even negative electron affinities are gallium nitride, aluminum nitride, and ternary alloys of general composition Al(x)Ga(1-x)N (where 0<x<1). These materials exhibit attractively high degrees of chemical, mechanical, and thermal stability plus acceptably high resistance to sputtering. The electron-excitation cross sections of these materials are expected to exceed those of several other materials (including diamond) that are, variously, in use or under development for the same purpose. Moreover, by doping these materials with silicon, one can render them partly electrically conductive, thereby suppressing the undesired accumulation of electric charge that could otherwise occur during bombardment by ions. For experiments, thin films of AlN and GaN both undoped and doped with Si were deposited on commercial MCPs by radio-frequency molecular-beam epitaxy (also known as plasma-assisted molecular-beam epitaxy) at temperatures <200 C. This deposition technique is particularly suitable because (1) MCPs cannot withstand the higher deposition-substrate temperatures used to decompose constituent compounds in some other deposition techniques and (2) in this technique, the constituent Al, Ga, and N are supplied in elemental form, so that there is no need for thermal decomposition at the substrate surface. The nitride films thus formed were, variously, amorphous or polycrystalline. The nitride films were coated with surface layers of gold <100 thick. The MCPs were tested in a standard configuration in which the output stage of a first MCP was coupled to the input stage of a second MCP. Each pair of MCPs was mounted in a standard holder that included front and back contact rings and an anode for collecting the output electrons of the second MCP. The MCP pairs were biased at potentials between 1.7 and 1.9 kV, and count rates measured after preamplification and discrimination. To enable a direct comparison, in one pair, the second MCP was uncoated while the first MCP was coated over half its surface. The coated and uncoated sides of the half-coated MCP were exposed to fluxes of argon ions at kinetic energies of 1.0 and 0.5 keV. At 1.0 keV, the count rate for the coated side was about 2.3 times greater than that for the uncoated side; at 0.5 keV, the count rate for the coated side was about 1.8 times greater than that for the uncoated side.
Bensaoula, Abdelhakim↗
Bremsstrahlung in the scattering of low-energy electrons by neutral atomic systems
By elementary methods, the cross section for electron-atom and electron-molecule bremsstrahlung is computed in the limit when the incident electron energy is much less than Ry. The procedure employs the classical soft-photon emission probability formula for general (h/2pi)(omega), yielding a simple expression for the bremsstrahlung cross section in terms of the total elastic scattering cross section. The validity of the method is discussed, and results are compared with more elaborate and accurate calculations. Comparison is made with ('free-free') opacity calculations for the associated process at the temperature (6300 K) of the solar atmosphere. For chi sub omega = (h/2pi)(omega)/kT = 1, the computed absorption coefficient is within 2, 7, and 12 percent of accurate calculations for scatterings by H, He, and H2, respectively. The general dependence of the opacity on chi sub omega is described well by the simple formula, although the error is larger for higher chi sub omega; it is suggested that the inaccuracy at high frequencies is due to the failure of the soft-photon approximation.
Gould, R. J.↗