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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15

A Large, Deep 3 Deg2 Survey of Hα, [OIII], and [OII] Emitters from LAGER: Constraining Luminosity Functions

We present our measurements of the Hα, [OIII], and [O II] luminosity functions as part of the Lyman Alpha Galaxies at Epoch of Reionization (LAGER) survey using our samples of 1577 z=0.47Hα-, 3933 z=0.93 [O III]-, and 5367 z=1.59 [O II]-selected emission line galaxies in a 3 deg2 single, CTIO/Blanco DECam pointing of the COSMOS field. Our observations reach 5σ depths of 8.2 × 10−18 erg s−1 cm−2 and comoving volumes of (1−7) × 105 Mpc3 making our survey one of the deepest narrow-band surveys. We select our emission line galaxies via spectroscopic confirmation, photometric redshifts, and colour–colour selections. We measure the observed luminosity functions for each sample and find best fits of φ* = 10−3.16+0.09 −0.09 Mpc−3and L* = 1041.72+0.09 −0.09 erg s−1 for Hα, φ* = 10−2.16+0.10−0.12 Mpc−3 and L* = 1041.38+0.07 −0.06 erg s−1 for [O III], and φ* = 10−1.97+0.07−0.07 Mpc−3 and L* = 1041.66+0.03−0.03 erg s−1 for [OII], with α fixed to −1.75, −1.6, and −1.3, respectively. An excess of bright >1042 erg s−1 [O III] emitters is observed and may be due to active galactic nucleus (AGN) contamination. Corrections for dust attenuation are applied assuming AHα = 1 mag. We also design our own empirical restframe g − r calibration using SDSS DR12 data, test it against our z = 0.47 Hα emitters with zCOSMOS 1D spectra, and calibrate it for (g − r) between −0.8 and 1.3 mag. Dust and AGN corrected star formation rate densities (SFRDs) are measured as log10ρSFR/(Msun yr−1 Mpc−3)=−1.63 ± 0.04, −1.07 ± 0.06, and −0.90 ± 0.10 for Hα, [OIII], and [O II], respectively. We find our [O III] and [O II] samples fully trace cosmic star formation activity at their respective redshifts in comparison to multiwavelength SFRDs, while the Hα sample traces ∼70 per cent of the total z = 0.47 SFRD.

galaxies↗

Emitter Surface Temperature Measurements of a 25-A class Hollow Cathode

Measurements of the emitter surface temperature of a hollow cathode were made using an optical ratio pyrometer. These measurements were performed to provide insight into the effect of various cathode operating parameters on emitter surface peak temperature and temperature distribution

Hollow Cathode↗

Virtual Slit for Improved Resolution in Longitudinal Emittance Measurement

A technique to reduce point-spread originating from physical slit width in emittance measurements is described. This technique is developed to improve phase resolution in a longitudinal emittance apparatus consisting of a dipole magnet, energy-selecting slit and bunch shape monitor. In this apparatus, the energy and phase resolutions are directly proportional to the width of the slit, but the virtual slit method enables sub-slit resolution. The bunch phase profile is measured at two points in the energy distribution with a separation less than the physical slit width. The difference of these two profiles is used to reconstruct the profile from a virtual slit of width equal to the separation.

Ruisard, Kiersten↗

Metal-assisted delayed fluorescent emitters employing pyrido-pyrrolo-acridine and analogues

Metal-assisted delayed fluorescent (MADF) emitters including cyclic tetradentate platinum (II) and palladium (II) complexes employing 8H-pyrido[3′,2′:4,5]-pyrrolo[3,2,1-de]acridine and its analogues. These complexes provide improved color purity and enhanced operational stability and are suitable for luminescent labels, emitters for organic light emitting diodes (OLEDs), and lighting applications.

Li, Jian↗

Ab initio evaluation of the electronic and optical properties of V B C B defect in wurtzite boron nitride as promising single-photon emitter

Single-photon emitters (SPEs) in the near-infrared (NIR) range with sharp and intense zero-phonon lines (ZPLs) of emission are critical for quantum communications. Certain local defects in wide-bandgap semiconductors create isolated occupied and unoccupied states within the bandgap of the host semiconductor and thus exhibit sharp ZPLs of emission. We designed and studied a defect in the wurtzite boron nitride as a potential SPE. It consists of a boron vacancy and a carbon atom substituting another boron atom (V B C B defect). The density of states is obtained within the GW method to identify favorable local defect states that may dominate optical transitions. The dielectric function and oscillator strength of the V B C B defect are obtained using the Bethe-Salpeter equation method to identify the optical excitations of the V B C B defect, from which we conclude that the defect could be a source of NIR emission with a narrow bright ZPL peak, thus an efficient SPE.

36 MATERIALS SCIENCE↗

Site-Controlled Quantum Emitters in Monolayer MoSe 2

Atomically thin semiconductors provide a highly attractive platform for quantum emitters (QEs): They can be combined with arbitrary substrates, can be spatially aligned with photonic structures, and can be electrically driven. All QEs reported to date in these materials have, however, relied on nominally spin-forbidden transitions, with radiative rates falling substantially below those of other solid-state QE systems. In this work, we employ strain confinement in monolayer MoSe 2 to produce engineered QEs, as confirmed in photon antibunching measurements. We discuss spin-allowed versus spin-forbidden transitions based on magneto- and time-resolved photoluminescence measurements. We calculate a radiative rate for spin-allowed quantum emission greater than 1 ns –1 , which exceeds reported radiative rates of WSe 2 QEs by 2 orders of magnitude.

2D materials↗

Telecom-Wavelength Single-Photon Emitters in Multilayer InSe

The development of robust and efficient single-photon emitters (SPEs) at telecom wavelengths is critical for advancements in quantum information science. Two-dimensional (2D) materials have recently emerged as promising sources for SPEs, owing to their high photon extraction efficiency, facile coupling to external fields, and seamless integration into photonic circuits. In this study, we demonstrate the creation of SPEs emitting in the 1000–1550 nm near-infrared range by coupling 2D indium selenide (InSe) with strain-inducing nanopillar arrays. The emission wavelength exhibits a strong dependence on the number of layers. Hanbury Brown and Twiss experiments conducted at 10 K reveal clear photon antibunching, confirming the single-photon nature of the emissions. In conclusion, density-functional-theory calculations and scanning-tunneling-microscopy analyses provide insights into the electronic structures and defect states, elucidating the origins of the SPEs.

2D Material↗

Programmable quantum emitter arrays

Following up on our earlier results in this program, on quantum photonic interface for tin-vacancy in diamond, we demonstrated spin control for this color center. We also worked towards creating engineered arrays of excitons in transition metal dichalcogenides (TMDs) and we developed platforms for efficient exciton-photon coupling. Finally, we worked on new quantum emitter arrays in hexagonal boron nitride.

36 MATERIALS SCIENCE↗

Field Emitter Cathodes and Electric Propulsion Systems

Replacing hollow and filament cathodes with field emitter (FE) cathodes could significantly improve the scalability, power, and performance of some meso- and microscale Electric Propulsion (EP) systems. This article discusses the motivation and challenges of integrating of FE and Electric Propulsion systems.

field emitters cathodes Electric Propulsion↗

Electric Propulsion Applications for Field Emitter Cathodes

Replacing hollow and filament cathodes with field emitter (FE) cathodes could significantly improve the scalability, power, and performance of some meso- and microscale Electric Propulsion (EP) systems.

Field emitters cathodes electric propulsion↗

Design Aspects of the Emittance Diagnostic for the Scorpius Accelerator

Dear author, This is a reminder that we are expecting you to resubmit your IPAC'23 paper 1268 at https://indico.jacow.org/event/41/papers/2549/ in a format compliant with the IoP guidelines posted at https://publishingsupport.iopscience.iop.org/author-guidelines-for-conference-proceedings/ Could you please upload your paper as a PDF file in the IoP format at https://indico.jacow.org/event/41/papers/2549/ Title: The Design of the Emittance Diagnostic for the Scorpius Accelerator id: 1268 The deadline for resubmitting your paper is July 1st 2023 but we would appreciate if you could submit it earlier. Thank you in advance, Nicolas Delerue on behalf of the IPAC'23 LPR SPB

43 PARTICLE ACCELERATORS↗

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

This study probes the extent to which dislocations reduce carrier lifetimes and alter growth morphology and luminescence in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic-integrated circuits. Around 20%–30% shorter carrier lifetimes are found at spatially resolved individual dislocations at room temperature using time-resolved cathodoluminescence spectroscopy, highlighting the strong nonradiative impact of dislocations even against the three-dimensional confinement of QDs. Beyond these direct effects of increased nonradiative recombination, it is found that misfit dislocations in the defect filter layers employed during III–V/Si growth alter the QD growth environment to induce a crosshatch-like variation in QD emission color and intensity when the filter layer is positioned sufficiently close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. This work presents a more complete picture of the impacts of dislocations relevant to the development of light sources for scalable silicon photonic integrated circuits.

36 MATERIALS SCIENCE↗

CdTe‐Based Solar Cells with Variations in Mg Concentration in the MgZnO Emitter

The optimal fraction of Mg incorporation in sputter-deposited Mg X Zn 1−X O (MZO) emitters for thin-film CdTe-based solar cells is evaluated by varying it over a range of x from 0 to 0.35. This range allows a variation in the conduction band offset from −0.1 eV (cliff like) to +0.32 eV (spike like). Here, a maximum efficiency of 18.5% for cells with the bilayer CdSeTe/CdTe absorber occurs at x = 0.15, which corresponds to a spike-like band offset near 0.2 eV, as confirmed by X-ray photoelectron spectroscopy. In addition, good cell performance is seen over a fairly broad range of x extending from 0.1 to 0.25. The MZO optical bandgap increases with the Mg fraction, consistent with an increasing conduction band offset. Temperature-dependent current−voltage measurements and time-resolved photoluminescence show improvement in the emitter/absorber interface with the incorporation of Mg. Capacitance−voltage measurements show that the depletion region extends further into the absorber with more Mg, and X-ray diffraction confirms a change from a hexagonal-dominant crystal structure toward zinc blende at x = 0.35.

14 SOLAR ENERGY↗