SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures.
Lidar-based hazard detection and avoidance will enable safe landing in scientifically interesting terrain with higher hazard abundance. ASC GoldenEye flash lidar was tested at JPL as part of EDL technology development for Mars 2018
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.
We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage mode. However, the single-level-cell (SLC) storage mode of the 3D NAND showed significantly reduced SEU susceptibility. Additionally, the 3D NAND showed less MBU susceptibility than the planar NAND, with reduced number of upset bits per byte and reduced cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the latest generation planar NAND, indicating a variable upset rate for a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.
We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode. The 3D NAND showed significantly reduced SEU susceptibility in single-level-cell (SLC) storage mode. Additionally, the 3D NAND showed less multiple-bit upset susceptibility than the planar NAND, with fewer number of upset bits per byte and smaller cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the Micron 16 nm planar NAND, which suggests that typical heavy ion test fluences will underestimate the upset rate during a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.
Heavy-ion test data for 3D NAND flash memories is presented, along with a discussion of modern testing challenges and near-term plans for a broad survey of currently-available product lines.
Single-event effects and total ionizing dose testing is described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results.
This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.
This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.
The purpose of this test was to characterize the Micron 512 GB NAND (MT29F512G08AUCBBH8-6IT:B) flash memory parameter degradation for total dose response. In the test, the device was exposed to high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated.
This paper discusses the space radiation effects in advanced flash memories.
Flash memories have evolved very rapidly in recent years.
This paper discusses single-event upset effets in flash memories, using heavy ions at the Texas A&M cyclotron. Initial results are presented for one manufacturer that compare uspet in the individual memory elemts with the more complex funtion failure modes that occur in the internal state machine and its control registers. This device is designed to function with either 5-V or 3.3-V power supply levels for read operations, but requires an additional 5 or 12-V power supply for write and erase operations.
Single-event upsets are observed in a 72-layer 3D NAND flash memory operated in single-level cell mode after low-energy proton (500 keV-1.2 MeV) and heavy ion irradiation. The layer-by-layer error count is analyzed to visualize the stopping of low energy protons within the memory stack, and Monte Carlo simulations are correlated with the experimental data. Direct ionization by low-energy protons is identified by three-dimensional data analysis and the energy dependence of device sensitive cross-section. Heavy ion data is also presented for comparison.
The Hunga Tonga–Hunga Ha’apai submarine volcano recently resumed activity. Violent eruptions on 2022 January 14th and 15th launched a tall ash plume that produced extremely high lightning rates. Here we report a terrestrial gamma-ray flash (TGF) that was produced by the volcanic lightning and observed from space by the Fermi Gamma-ray Burst Monitor (GBM). Observations by radio lightning networks and especially by the Geostationary Lightning Mapper (GLM) show that the only lightning close enough to produce a TGF detectable by Fermi GBM was from the volcano’s plume. With the observing duration of Fermi, observing a single TGF is consistent with the hypothesis that the volcanic lightning of this eruption produced TGFs at the average rate of thunderstorm lightning. The observation of a strong TGF from space also indicates that the electric field was oriented so as to accelerate electrons upward.
This paper describes a novel approach to safe landing problem by utilizing an onboard Flash Lidar to generate high-resolution elevation maps and applying a threshold-based approach to determine hazardous terrain features and identify safe landing locations.
A Flash Lidar utilizing a novel Super-Resolution technique has been developed for providing Terrain Relative Navigation and Hazard Avoidance capabilities onboard landing vehicles.
For bonded composite materials, an accurate characterization of the adhesive bond line is needed to predict failure modes and fracture toughness. In this paper, bond line thickness was estimated from data obtained using through transmission flash thermography. The forward model that predicts back surface temperature is based on a three layer heat diffusion equation with varying diffusivity and flux boundary conditions. The corresponding inverse problem of estimating bond line thickness from measurement data was solved using a Bayesian approach that assumed Gaussian priors for the bond line thickness and thermal diffusivity of the adherends. Finally, the outputs of the thermography based method were compared to measurements that were collected using a micrometer and ultrasound testing.