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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science ISS Investigation

A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processinginduced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.

Volz, M. P.↗
NASA NTRS2014

Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science Investigation

A series of Ge Si crystal growth experiments are planned to be conducted in the Low 1-x x Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

Volz, M. P.↗
NASA NTRS2014

Investigation of Backside Textures for Genesis Solar Wind Silicon Collectors

Genesis solar wind collectors were comprised of a suite of 15 types of ultrapure materials. The single crystal, pure silicon collectors were fabricated by two methods: float zone (FZ) and Czochralski (CZ). Because of slight differences in bulk purity and surface cleanliness among the fabrication processes and the specific vendor, it is desirable to know which variety of silicon and identity of vendor, so that appropriate reference materials can be used. The Czochralski method results in a bulk composition with slightly higher oxygen, for example. The CZ silicon array wafers that were Genesis-flown were purchased from MEMC Electronics. Most of the Genesis-flown FZ silicon was purchased from Unisil and cleaned by MEMC, although a few FZ wafers were acquired from International Wafer Service (IWS).

Gonzalez, C. P.↗
NASA NTRS2015

Crystal Growth of Germanium-Silicon Alloys on the ISS

A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The experiments are part of the investigation "Influence of Containment on the Growth of Silicon-Germanium" (ICESAGE). The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. This meniscus can exist over a much larger range of processing parameters in microgravity and the meniscus is more stable under microgravity conditions. The plans for the flight experiments will be described.

Volz, M. P.↗
NASA NTRS2016

Detached Solidification of Germanium-Silicon Crystals on the ISS

A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

Volz, M. P.↗
NASA NTRS2016

Detached Solidification of Germanium-Silicon Crystals on the ISS

A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

Volz, M. P.↗
NASA NTRS2017

Influence of Containment on the Growth of Germanium-Silicon in Microgravity

This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: Float zone growth, Bridgman growth, and Detached Bridgman growth. The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.

Volz, M. P.↗
NASA NTRS2017

Influence of Containment on the Growth of Germanium-Silicon in Microgravity

A series of Ge(sub 1-x)Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and 'detached' Bridgman methods and the ground-based float zone technique. 'Detached' or 'dewetted' Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. A meniscus bridges this gap between the top of the crystal and the crucible wall. Theoretical models indicate that an important parameter governing detachment is the pressure differential across this meniscus. An experimental method has been developed to control this pressure differential in microgravity that does not require connection of the ampoule volume to external gases or changes in the temperature profile during growth. Experiments will be conducted with positive, negative or zero pressure differential across the meniscus. Characterization results of ground-based experiments, including etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction will also be described.

Volz, M. P.↗
NASA NTRS2017

Growth Angle - a Microscopic View

The growth angle that is formed between the side of the growing crystal and the melt meniscus is an important parameter in the detached Bridgman crystal growth method, where it determines the extent of the crystal-crucible wall gap, and in the Czochralski and float zone methods, where it influences the size and stability of the crystals. The growth angle is a non-equilibrium parameter, defined for the crystal growth process only. For a melt-crystal interface translating towards the crystal (melting), there is no specific angle defined between the melt and the sidewall of the solid. In this case, the corner at the triple line becomes rounded, and the angle between the sidewall and the incipience of meniscus can take a number of values, depending on the position of the triple line. In this work, a microscopic model is developed in which the fluid interacts with the solid surface through long range van der Waals or Casimir dispersive forces. This growth angle model is applied to Si and Ge and compared with the macroscopic approach of Herring. In the limit of a rounded corner with a large radius of curvature, the wetting of the melt on the crystal is defined by the contact angle. The proposed microscopic approach addresses the interesting issue of the transition from a contact angle to a growth angle as the radius of curvature decreases.

Mazurak, K.↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗
NASA NTRS2004

Experiments on Suppression of Thermocapillary Oscillations in Sodium Nitrate Floating Half-Zones by High-frequency End-wall Vibrations

Experiments to suppress thermocapillary oscillations using high-frequency vibrations were carried out in sodium nitrate floating half-zones. Such a half-zone is formed by melting one end of a vertically held sodium nitrate crystal rod in contact with a hot surface at the top. Thermocapillary convection occurs in the melt because of the temperature gradient at the free surface of the melt. In the experiments, when thermocapillary oscillations occurred, the bottom end of the crystal rod was vibrated at a high frequency to generate a streaming flow in a direction opposite to that of the thermocapillary convection. It is observed that, by generating a sufficiently strong streaming flow, the thermocapillary flow can be offset enough such that the associated thermocapillary oscillations can be quenched.

Anilkumar, A.↗
NASA NTRS1992

Device for mechanically stabilizing web ribbon buttons during growth initiation

The invention relates to a stabilization device for stabilizing dendritic web seed buttons during initiation of crystal growth from a float melt zone. The invention includes angular maintenance means for maintaining a constant angular orientation between the axis of a growth initiation seed and the upper surface of a web button during withdrawal of the web button from the melt. In the preferred embodiment, the angular means includes an adjustable elevation tube which surrounds the seed, the weight of which may be selectively supported by the seed button during web button withdrawal.

Henry, Paul K.↗
NASA NTRSDate not supplied

Recent Advances in Discrete Crack Modeling Applied to Laminated Composites with Emphasis on: Floating Node Method, VCCT and Cohesive Zone Modeling

The present talk will provide an overview of the work performed during the Advanced Composites Project (ACP) on the development, and verification and validation of the Floating Node Method (FNM) as well as the Virtual Crack Closure Technique (VCCT) and cohesive zone modeling (CZM). The FNM is a finite element-based technique to represent crack networks. The complex nature of matrix crack-delamination interactions observed in unidirectional (UD) tape laminates suggests that a methodology such as the FNM method may be required to be able to accurately simulate damage progression in these laminates. Simulating crack onset and growth within the context of the FNM relies on techniques such as VCCT and CZM. The talk is organized to provide, via select examples, an overview of the breadth of the Verification & Validation (V&V) exercises performed during the ACP, and how these challenged the state-of-the art and guided further developments in discrete crack modeling, while helping to establish confidence in the progress made and map the challenges ahead. The performance of the VCCT and CZM individually, and in combination with the FNM can be assessed through verification exercises. These exercises typically consist of a comparison of simulation results to known numerical or analytical solutions. Verification is key to identify implementation issues and limitations that, otherwise, may remain undetected and cloud any subsequent validation efforts. Indeed, a subset of these numerical exercises led to further developments of the VCCT and the FNM method as will be illustrated. Before embarking on the subsequent validation of the framework, it is critical to have adequate characterization data. However, the testing campaign conducted revealed material responses that challenged the state-of-the-art and required further developments. The developments in CZM technology associated with the modeling of the responses of hybrid interfaces (fabric/UD) will be given as an example. Finally, the talk will conclude with a summary of the validation exercises performed under quasi-static and fatigue loadings, highlighting some of the key achievements, outstanding challenges and lessons learned.

finite elements↗
NASA NTRS1975

Relation of lineaments to sulfide deposits: Bald Eagle Mountain, Centre County, Pennsylvania

The author has identified the following significant results. Discrete areas of finely-fractured and brecciated sandstone float are present along the crest of Bald Mountain and are commonly sites of sulfide mineralization, as evidenced by the presence of barite and limonite gossans. The frequency distributions of the brecciated float as the negative binomial distribution supports the interpretation of a separate population of intensely fractured material. Such zones of concentrated breccia float have an average width of one kilometer with a range from 0.4 to 1.6 kilometers and were observed in a quarry face to have subvertical dips. Direct spatial correlation of the Landsat-derived lineaments to the fractured areas on the ridge is low; however, the mineralized and fracture zones are commonly assymetrical to the lineament positions. Such a systematic dislocation might result from an inherent bias in the float population or could be the product of the relative erosional resistance of the silicified material in the mineralized areas in relation to the erosionally weak material at the stream gaps.

Mcmurtry, G. J.↗
NASA NTRS1978

Outfall siting with dye-buoy remote sensing of coastal circulation

A dye-buoy remote sensing technique has been applied to estuarine siting problems that involve fine-scale circulation. Small hard cakes of sodium fluorescein and polyvinyl alcohol, in anchored buoys and low-windage current followers, dissolve to produce dye marks resolvable in 1:60,000 scale color and color infrared imagery. Lagrangian current vectors are determined from sequential photo coverage. Careful buoy placement reveals surface currents and submergence near fronts and convergence zones. The technique has been used in siting two sewage outfalls in Hampton Roads, Virginia: In case one, the outfall region during flood tide gathered floating materials in a convergence zone, which then acted as a secondary source during ebb; for better dispersion during ebb, the proposed outfall site was moved further offshore. In case two, flow during late flood was found to divide, with one half passing over shellfish beds; the proposed outfall site was consequently moved to keep effluent in the other half.

Munday, J. C., Jr.↗
NASA NTRS1993

Multibody-plasma interactions - Charging in the wake

Multibody-plasma interactions refers to two or more charged bodies simultaneously interacting with the surrounding plasma as well as each other. This paper concerns a basic type of such interactions in space: the charging of a free flyer in the wake of a large structure. The conditions for severe charging are discussed quantitatively. Computer particle simulations are carried out to obtain the charging potentials in the wake of both floating and biased plate. It is shown that a severe charging zone exists in the near wake of a floating plate within which a free flyer is charged to the KV range under the sun shadow/auroral electron condition. Whether the plate is biased or floating, a large potential difference always exists between the plate and a docking free flyer in the wake. The effects of wake charging on spacecraft docking operations are discussed.

Wang, J.↗
NASA NTRS1986

Emission of methane and other trace gases from the Amazon Varzea

Researchers measured the distributions and fluxes of methane and other trace gases from the various Amazon floodplain environments. These were determined during both a large scale, quasi-synoptic survey along a 2000 km reach of the Amazon river and an intensive local study (by J. Melack, R. Harriss et al.) covering a six-week period. The environments studied included the major rivers, connecting channels (paranas), floating macrophyte beds, flooded forests, open lakes and recently wetted soils. The results are summarized. Measured rates of methane emission averaged about 300 mg m-2 d-1, but with considerable variance, and were comparable to or higher than previously reported emissions from similar temperature zone environments. In general, areas covered by floating macrophytes showed the highest emissions. Individual hotspots had among the highest rates ever observed, over 10 g m-2 d-1. The high methane emissions appear to result because about 50% of the organic matter fixed on the floodplain (either terrestrial or aquatic) that is oxidized in the water is decomposed anaerobically via methanogensis. Measured fluxes of methane to the atmosphere appear to be significantly correlated with surface water dissolved methane concentrations.

Richey, Jeffrey E.↗