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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Advanced methods for preparation and characterization of infrared detector materials

Crystals were prepared by the Bridgman-Stockbarger method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady-state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of solute redistribution during the crystal growth of the alloys. Measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential-thermal-analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Experiments were conducted to determine the ternary phase equilibria in selected regions of the Hg-Cd-Te constitutional phase diagram. Electron and hole mobilities as functions of temperature were analyzed to establish charge-carrier scattering probabilities. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge-carrier concentration, charge-carrier mobilities, Hall coefficient, and Dermi Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

Broerman, J. G.↗
NASA NTRS1990

Nucleation and growth control in protein crystallization

The five topics summarized in this final report are as follows: (1) a technique for the expedient, semi-automated determination of protein solubilities as a function of temperature and application of this technique to proteins other than lysozyme; (2) a small solution cell with adjustable temperature gradients for the growth of proteins at a predetermined location through temperature programming; (3) a microscopy system with image storage and processing capability for high resolution optical studies of temperature controlled protein growth and etching kinetics; (4) growth experiments with lysozyme in thermosyphon flow ; and (5) a mathematical model for the evolution of evaporation/diffusion induced concentration gradients in the hanging drop protein crystallization technique.

Rosenberger, Franz↗
NASA NTRS1975

Effect of thermal profile on cyclic flaw growth in aluminum

Surface flawed and single edge notch tension specimens of 2219-T851 and -T87 aluminum were tested to determine static fracture characteristics and base line (constant amplitude, constant temperature) cyclic flaw growth behavior. Subsequent testing was then conducted in which flawed specimens were subjected to a thermal profile in which the applied stress was varied simultaneously with the temperature. The profile used represents a simplified space shuttle orbiter load/temperature flight cycle. Test temperatures included the range from 144K (-200 F) up to 450K (350 F). The measured flaw growth rates obtained from the thermal profile tests were then compared with rates predicted by assuming linear cumulative damage of base line rates.

Engstrom, W. L.↗
NASA NTRS1984

Low temperature diffusion coefficients in the Fe-Ni and FeNiP systems: Application to meteorite cooling rates

The interdiffusion coefficient of FeNi in fcc taenite (gamma) of Fe-Ni and Fe-Ni-0.2 P alloys was measured as a function of temperature between 600 and 900 C. This temperature range is directly applicable to the nucleation and growth of the Widmanstatten pattern in iron meteorites and metal regions of stony and stony-iron meteorites. Diffusion couples were made from FeNi or FeNiP alloys which ensured that the couples were in the taenite phase at the diffusion temperature. The presence or absence of grain boundary diffusion was determined by measuring the Ni profile normal to the existing grain boundaries with the AEM. Ignoring any variation of interdiffusion coefficient with composition, the measured data was plotted versus the reciprocal of the diffusion temperature. The FeNi data generally follow the extrapolated Goldstein, et al. (1965) data from high temperatures. The FeNiP data indicates that small additions of P (0.2 wt%) cause a 3 to 10 fold increase in the FeNi interdifussion coefficient increasing with decreasing temperature. This increase is about the same as that predicted by Narayan and Goldstein (1983) at the Widmanstatten growth temperature.

Dean, D. C.↗
NASA NTRS2006

Anaerovirgula multivorans gen. nov., sp. nov., a Novel Spore-Forming, Alkaliphilic Anaerobe Isolated from Owens Lake, California, USA

A novel, alkaliphilic, obligately anaerobic bacterium, strain SCAT, was isolated from mud sediments of a soda lake in California, USA. The rod-shaped cells were motile, Gram-positive, formed spores and were 0.4-0.5x2.5-5.0 micrometers in size. Growth occurred within the pH range 6.7-10.0 and was optimal at pH 8.5. The temperature range for growth was 10-45 degrees C, with optimal growth at 35 degrees C. NaCl was required for growth. Growth occurred at 0.5-9.0% (w/v) NaCl and was optimal at 1-2% (w/v). The novel isolate was a catalase-negative chemo-organoheterotroph that fermented sugars, proteolysis products, some organic and amino acids, glycerol, d-cellobiose and cellulose. It was also capable of growth by the Stickland reaction. Strain SCAT was sensitive to tetracycline, chloramphenicol, rifampicin and gentamicin, but it was resistant to ampicillin and kanamycin. The G+C content of the genomic DNA was 34.2 mol%. Major fatty acid components were C14:0, iso-C15:0, C16:1omega9c and C16:0. 16S rRNA gene sequence analysis of strain SCAT showed a similarity of approximately 97% with the type strains of Clostridium formicaceticum and Clostridium aceticum in clostridial cluster XI and a similarity of less than 94.2% to any other recognized Clostridium species and those of related genera in this cluster. Strain SCAT was clearly differentiated from C. formicaceticum and C. aceticum based on comparison of their phenotypic properties and fatty acid profiles, as well as low levels of DNA-DNA relatedness between strain SCAT and the type strains of these two species. Therefore, strain SCAT is considered to represent a novel species of a new genus, Anaerovirgula multivorans gen. nov., sp. nov., in clostridial cluster XI. The type strain is SCAT (=ATCC BAA-1084T=JCM 12857T=DSM 17722T=CIP 107910T).

Pikuta, Elena V.↗
NASA NTRS2018

Can Egypt Become Self-Sufficient in Wheat?

Egypt produces half of the 20 million tons of wheat that it consumes with irrigation and imports the other half. Egypt is also the world's largest importer of wheat. The population of Egypt is currently growing at 2.2% annually, and projections indicate that the demand for wheat will triple by the end of the century. Combining multi-crop and -climate models for different climate change scenarios with recent trends in technology, we estimated that future wheat yield will decline mostly from climate change, despite some yield improvements from new technologies. The growth stimulus from elevated atmospheric CO2 will be overtaken by the negative impact of rising temperatures on crop growth and yield. An ongoing program to double the irrigated land area by 2035 in parallel with crop intensification could increase wheat production and make Egypt self-sufficient in the near future, but would be insufficient after 2040s, even with modest population growth. Additionally, the demand for irrigation will increase from 6 to 20 billion m3 for the expanded wheat production, but even more water is needed to account for irrigation efficiency and salt leaching (to a total of up to 29 billion m3). Supplying water for future irrigation and producing sufficient grain will remain challenges for Egypt.

Asseng, Senthold↗
NASA NTRS1975

Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices

The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

Chu, T. L.↗
NASA NTRS1988

Internal temperature gradient of alloy semiconductor melts from interrupted growth experiments

Interrupted growth experiments on Hg(0.8)Cd(0.2)Se alloys were performed in an attempt to estimate the actual internal temperature gradient in the melt during directional solidification. The results have been analyzed in terms of a theoretical model which assumes an axial composition profile characteristic of diffusion controlled solute redistribution during growth. A comparison of the calculated and measured values suggests a reduction in the applied (empty furnace) temperature gradient by about a factor of three. Values of the interface segregation coefficient (k) determined from the phase diagram, predict values of solute concentration build up in the solid during growth interruptions which are inconsistent with measured results. It appears that the k values used tend to underestimate the actual k values for higher alloy compositions and overestimate k for the lower alloy compositions.

Andrews, R. N.↗
NASA NTRS1994

The effects of temperature and NaCl concentration on tetragonal lysozyme face growth rates

Measurements were made of the (110) and (101) face growth rates of the tetragonal form of hen egg white lysozyme at 0.1M sodium acetate buffer, pH 4.0, from 4 to 22 C and with 3.0%, 5.0%, and 7.0% NaCl used as the precipitating salt. The data were collected at supersaturation ratios ranging from approximately 4 to approximately 63. Both decreasing temperature and increasing salt concentrations shifted plots of the growth rate versus C/C(sat) to the right, i.e. higher supersaturations were required for comparable growth rates. The observed trends in the growth data are counter to those expected from the solubility data. If tetragonal lysozyme crystal growth is by addition of ordered aggregates from the solution, then the observed growth data could be explained as a result of the effects of lowered temperature and increased salt concentration on the kinetics and equilibrium processes governing protein-protein interactions in solution. The data indicate that temperature would be a more tractable means of controlling the growth rate for tetragonal lysozyme crystals contrary to the usual practice in, e.g., vapor diffusion protein crystal growth, where both the precipitant and protein concentrations are simultaneously increased. However, the available range for control is dependent upon the protein concentration, with the greatest growth rate control being at the lower concentration.

Forsythe, Elizabeth↗
NASA NTRS1987

Rate limits in silicon sheet growth - The connections between vertical and horizontal methods

Meniscus-defined techniques for the growth of thin silicon sheets fall into two categories: vertical and horizontal growth. The interactions of the temperature field and the crystal shape are analyzed for both methods using two-dimensional finite-element models which include heat transfer and capillarity. Heat transfer in vertical growth systems is dominated by conduction in the melt and the crystal, with almost flat melt/crystal interfaces that are perpendicular to the direction of growth. The high axial temperature gradients characteristic of vertical growth lead to high thermal stresses. The maximum growth rate is also limited by capillarity which can restrict the conduction of heat from the melt into the crystal. In horizontal growth the melt/crystal interface stretches across the surface of the melt pool many times the crystal thickness, and low growth rates are achievable with careful temperature control. With a moderate axial temperature gradient in the sheet a substantial portion of the latent heat conducts along the sheet and the surface of the melt pool becomes supercooled, leading to dendritic growth. The thermal supercooling is surpressed by lowering the axial gradient in the crystal; this configuration is the most desirable for the growth of high quality crystals. An expression derived from scaling analysis relating the growth rate and the crucible temperature is shown to be reliable for horizontal growth.

Thomas, Paul D.↗
NASA NTRS1993

Secondary and tertiary dendrite arm spacing relationships in directionally solidified Al-Si alloys

Secondary, lambda sub 2, and tertiary, lambda sub 3, dendrite arm spacings have been measured from Al-Si alloys which were directionally solidified as functions of growth velocity, V, temperature gradient, G, and composition, Co. Both lambda sub 2 and lambda sub 3 decreased as the imposed growth velocity and silicon concentrations were increased, and for each function a systematic variance in the rate was seen. Complications with measuring secondary arm spacings are shown and it was found that the tertiary arm data agree much better with coarsening theory, the implication being that lambda sub 3, when measurable, is a more representative and reliable measure of the solidification history than lambda sub 2.

Grugel, R. N.↗
NASA NTRS1992

Fracture and damage; Winter Annual Meeting of the American Society of Mechanical Engineers, Anaheim, CA, Nov. 8-13, 1992

The latest developments in the area of fracture and damage at high temperatures are discussed, in particular: modeling; analysis and experimental techniques for interface damage in composites including the effects of residual stresses and temperatures; and crack growth, inelastic deformation and fracture parameters for isotropic materials. Also included are damage modeling and experiments at elevated temperatures.

Nagar, Arvind↗
NASA NTRS1995

InP tunnel junction for InGaAs/InP tandem solar cells

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

Vilela, M. F.↗
NASA NTRS1973

Load interaction effects on fatigue crack growth in Ti-6Al-4V alloy

The importance of delay, retardation in the rate of fatigue crack growth, produced by load interactions in variable amplitude loading, on the accurate prediction of fatigue lives of engineering structures is discussed. The effects of a broad range of loading variables on delay in fatigue crack growth at room temperature are examined for a mill annealed Ti-6Al-4V alloy. The results are used to estimate crack growth behavior under programmed loads.

Wei, R. P.↗
NASA NTRS1974

Delay in fatigue crack growth

The importance of delay, or retardation in the rate of fatigue crack growth, produced by load interactions in variable amplitude loading on the accurate prediction of fatigue lives of engineering structures has been well recognized for some time. Heretofore, only a few simple loading combinations or spectra have been examined systematically. In this investigation the effects of a broad range of loading variables on delay in fatigue crack growth at room temperature are examined for a mill annealed Ti-6Al-4V alloy. The results are used to estimate crack growth behavior under programmed loads.

Wei, R. P.↗
NASA NTRS2010

Fatigue Resistance of the Grain Size Transition Zone in a Dual Microstructure Superalloy Disk

Mechanical property requirements vary with location in nickel-based superalloy disks. To maximize the associated mechanical properties, heat treatment methods have been developed for producing tailored microstructures. In this study, a specialized heat treatment method was applied to produce varying grain microstructures from the bore to the rim portions of a powder metallurgy processed nickel-based superalloy disk. The bore of the contoured disk consisted of fine grains to maximize strength and fatigue resistance at lower temperatures. The rim microstructure of the disk consisted of coarse grains for maximum resistance to creep and dwell crack growth at high temperatures up to 704 C. However, the fatigue resistance of the grain size transition zone was unclear, and needed to be evaluated. This zone was located as a band in the disk web between the bore and rim. Specimens were extracted parallel and transverse to the transition zone, and multiple fatigue tests were performed at 427 and 704 C. Mean fatigue lives were lower at 427 C than for 704 C. Specimen failures often initiated at relatively large grains, which failed on crystallographic facets. Grain size distributions were characterized in the specimens, and related to the grains initiating failures as well as location within the transition zone. Fatigue life decreased with increasing maximum grain size. Correspondingly, mean fatigue resistance of the transition zone was slightly higher than that of the rim, but lower than that of the bore. The scatter in limited tests of replicates was comparable for all transition zone locations examined.

Gabb, T. P.↗
NASA NTRS1982

Heat transfer analysis of the Bridgman-Stockbarger configuration for crystal growth. Part 1: Analytical treatment of the axial temperature distribution

All first order effects on the axial temperature distribution in a solidifying charge in a Bridgman-Stockbarger configuration for crystal growth are analyzed on the basis of a one dimensional model whose validity can be verified through comparison with published finite difference ana;uses of two dimensional models. The model presented includes an insulated region between axially aligned heat pipes and considers the effects of charge diameter, charge motion, thickness, and thermal conductivity of a confining crucible, thermal conductivity change at the crystal-melt interface, generation of latent heat at the interface, and finite charge length. Results are primarily given in analytical form and can be used without recourse to computer work for both improve furnace design and optimization of growth conditions in a given thermal configuration.

Jasinski, T. J.↗