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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The efficient doping of a donor–acceptor copolymer is controlled by the charge–quadrupole interaction between the dopant and the respective units to improve the photovoltaic performance by alleviating the energy barrier for charge separation.
Surface photovoltage spectroscopy measures the contribution of solution-processed hole transport layers to the photovoltage of GaP solar cells.
A series of cobalt-promoted indium–titanium composite oxides was synthesized using a microemulsion method. Their functional properties were investigated for the photothermal reduction of carbon dioxide. In this series, the indium content varied between 2.5 and 20%, while the cobalt percentage was kept constant at 4% throughout the series. In all cases, carbon monoxide formation occurred selectively through the reverse water gas shift reaction. The sample with 2.5% In maximized the synergistic use of the two energy sources, while the sample with 10% In showed the highest catalytic activity under both thermal and dual photo-thermo conditions. A physicochemical characterization was performed for all samples. The use of microscopy and X-ray absorption spectroscopy demonstrated that sub-nanometric indium entities, in combination with atomically dispersed cobalt oxide entities, achieved a balance between high thermal activity and significant synergy between light and heat in a catalytic process. The system with 10% indium is thus able to improve the thermal catalytic process through the use of light, providing an intensification procedure for the classic process.
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We have investigated the structural and electronic properties of Yb-doped SrTiO3/Si(001) grown by molecular beam epitaxy. Other rare-earth donor dopants that result in n-type conductivity typically substitute for Sr at the A-sites in the perovskite lattice. In contrast, Yb has been found to substitute predominantly for Ti at the perovskite B-sites based on data from atomically resolved scanning transmission electron microscopy and spectroscopy, as well as extended x-ray absorption fine structure. Yb exhibits two distinct charge states as determined by x-ray absorption spectroscopy and associated modeling, +2.7 and +2.1. These aliovalent substitutional dopants are compensated by donor electrons from oxygen vacancies that form during epitaxial film growth. An atom beam flux mismatch was present during film depositions because it was assumed that Yb would occupy A-sites, leading to a flux matching formula given by Yb + Sr = Ti. However, the formation of YbTi rather than YbSr results in Sr vacancies and extraneous (i.e. non-lattice) Ti atoms in the films, or on the film surfaces. The presence of these defects, together with oxygen vacancies, leads to deep-level electron traps that were detected by resonant photoemission and much higher sheet resistance than that associated with, for instance, La-doped films.
Phonons are important carriers of energy and information in many cryogenic devices used for quantum information science and in fundamental physics experiments such as dark matter detectors. In these systems phonon behavior can be dominated by interfaces, hence there is increasing demand for a more detailed understanding of interfacial phonon transport in relevant material systems. Previous studies have focused on understanding thermal transport over the entire phonon spectrum at and above room temperature. At ultra-low temperatures, however, knowledge is missing regarding athermal phonon behavior due to the challenge in modeling the extreme conditions in micro-scale, heterogeneous cryogenic systems, as well as extracting single-phonon information from a large ensemble. In this work, we delineate interfacial phonon transport using a combination of classical molecular dynamics (MD) and phonon wave packet simulations, to illustrate the consistency and differences between the ensemble- and single-phonon dynamics. We consider three single-crystal Si surface reconstructions --- (1×1), (v3×v3) and (7×7) --- and model both experimentally observed Si(1×1)/Al interfaces and hypothesized Si(v3×v3)/Al and Si(7×7)/Al interfaces. The overall interfacial thermal conductance calculated from non-equilibrium MD shows that for the Si(1×1)/Al system, the presence of Al twin grain boundaries can hinder phonon transport and reduce thermal conductance by 2--12% relative to single-crystal Al; whereas the Si (v3×v3) and (7×7) reconstructions can enhance it by 6--19%. Normal mode decomposition reveals that both the increase and decrease in conductance are related to inelastic phonon scattering. Single-phonon wave packet simulations show results consistent with NEMD, while further suggesting that phonon polarization conversion is significant even when elastic transmission dominates, and that the interfacial structures have anisotropic impacts on atomic vibrations along different lattice directions. Our findings suggest alternative perspectives in achieving selective phonon transport through controlling interfacial structures of materials with atomically-precise fabrication techniques, and that the phonon wave packet formalism is a potentially powerful method for developing a detailed understanding of non-equilibrium phenomena in the low-temperature limit.
Identifying and understanding interfacial magnetic structures of transition-metal oxides are of great importance not only for fundamental physics but also for potential device applications. Among them, manganite and ruthenate heterostructures have attracted considerable interest due to their intriguing interfacial properties induced by complex magnetic interactions. Here, we report the observation of dramatic buffer-layer dependence of ferromagnetism in ultrathin (La 2/3 Ca 1/3 )MnO 3 (LCMO)-based heterostructures. Though all trilayers are nonmetallic, the SrRuO 3 -buffered LCMO trilayer exhibits enhanced ferromagnetism with the Curie temperature (𝑇 C ∼ 198K) much higher than for CaRuO 3 (𝑇 C ∼ 99K)- and SrTiO 3 (𝑇 C ∼ 42K)-buffered counterparts, as well as the monolithic LCMO films with similar thickness. Combining atomically resolved scanning transmission electron microscopy imaging with electron energy loss spectroscopy mapping, we reveal that asymmetric interfaces exist in the SrRuO 3 buffered trilayer, with one exhibiting 1 unit-cell Sr diffusion into LCMO, which is responsible for the 𝑇 C enhancement. In contrast, charge transfer, which has been proposed previously as a possible mechanism, is excluded in this study. In conclusion, our results may pave a promising road toward effective atomic control of interfacial magnetism.
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Perovskite nanocrystals and SWCNTs join forces in optical synapses with attractive switching metrics and low-energy operation.
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The optical and electronic properties of single crystal Cu2S-CdS photovoltaic cells were investigated. In these cells trapped charge near the interface which is manifested by a persistent increase in junction capacitance (the photocapacitance) plays a significant role in determining the carrier transport properties. It was found that the severe degradation in short-circuit current observed in heat-treated cells can be separated into two components: (1) a relatively small thermal component occurring on heat-treatment in the dark, and (2) a much larger degradation caused by exposure to light at room temperature. By a short additional heat-treatment above approximately 100 C the cell can be completely restored to its condition before the optically caused degradation with no effect on the depletion layer width.
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Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for CW room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 micron. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane.