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NASA NTRS2018

Materials International Space Station Experiment-9 (MISSE-9) Polymers and Composites Experiment

Spacecraft in low Earth orbit (LEO) are subjected to harsh environmental conditions, including radiation (cosmic rays, ultraviolet, x-ray, and charged particle radiation), micrometeoroids and orbital debris, temperature extremes, thermal cycling, and atomic oxygen (AO). These environmental exposures can result in erosion, embrittlement and optical property degradation, threatening spacecraft performance and durability. To increase our understanding of effects such as AO erosion and radiation induced embrittlement of spacecraft materials, NASA Glenn has developed a series of experiments flown as part of the Materials International Space Station Experiment (MISSE) missions on the exterior of the International Space Station (ISS). These experiments have provided critical LEO space environment durability data such as AO erosion data for many materials and mechanical properties changes after long term space exposure. In continuing these studies, a new experiment called the Polymers and Composites Experiment has been selected for flight on the MISSE-Flight Facility (MISSE-FF). The Polymers and Composites Experiment will be flown as part of the MISSE-9 mission, the inaugural mission of MISSE-FF manifested on SpaceX-14. This experiment includes 138 samples being flown in ram, wake or zenith orientations for space environmental durability assessment. The primary objective is to determine the LEO AO erosion yield, Ey (the volume loss per incident oxygen atom (cm3/atom)), of polymers, composites, and coated samples, as a function of solar irradiation and AO fluence. In addition, epoxy samples with varying levels of ZnO powder are included to study the effect of filler quantity on AO erosion. An AO Scattering Chamber is included to help improve the understanding of AO scattering mechanisms for improved AO undercutting modeling. Indium tin oxide (ITO) coated samples are included to validate the durability of ITO conductive coatings in LEO. Tensile samples of Teflon fluorinated ethylene propylene (FEP) of varying thicknesses and back-surface coatings will be flown in wake and zenith orientations to study radiation embrittlement versus thickness, and the effect of heating on FEP embrittlement. Finally, shape memory composite and cosmic ray shielding samples will be flown for LEO durability assessment. This paper presents an overview of the MISSE-9 Polymers and Composites Experiment.

Embrittlement↗

NASA NTRS2019

Technology Development for the Modification of High Aspect Ratio Geometries for Thermal and Environmental Control

A key technology development driver in environmental control systems and next generation optics are discussed utilizing thin film development borrowed from the semiconductor industry. The optical and physical properties of spacecraft radiator coatings are dictated by orbital environmental conditions. For example, coatings must adequately dissipate charge buildup when orbital conditions, such as polar, geostationary or gravity neutral, result in surface charging. Current dissipation techniques include depositing a layer of ITO (indium tin oxide) on the radiator surface in a high temperature process. The application of these enhanced coatings must be such that the properties in question are tailored to mission-specific requirements. The multi-billion-dollar semiconductor industry has adopted Atomic Layer Deposition (ALD) for self-assembly and atomic-scale placement. ALD is a cost-effective nanoadditive-manufacturing technique that allows for the conformal coating of substrates with atomic control in a benign temperature and pressure environment. By using ALD, modification of these coatings can be accomplished during coating application preprocessing. The preprocessing is rendered directly on the coating dry pigment before binding. Through the introduction of paired precursor gases, thin films can be deposited on a myriad of substrates ranging from glass, polymers, aerogels, metals, powders, and other high aspect-ratio micro- and nano- structures. By providing atomic-level control, where single layers of atoms can be deposited, the fabrication of metal transparent films, precise nano-laminates, and coatings of nano-channels and pores is achievable. A method has been demonstrated for the ALD of In2O3 and films on a variety of substrates from Si(100) wafers, glass slides, and on Z93P pigments resulting in a direct spaceflight application. Results will be presented that verify the chemical composition of ALD pigments and charge dissipation properties when the pigment goes through its binding and coating process and we present early results of ALD for carbon nanotube formation and encapsulation.

Dwivedi, Vivek H.↗

NASA NTRS2019

Application and Development of Atomic Layer Deposition Techniques to Improve Thermo-Optical Coatings for Spacecraft Thermal Control and Advanced Optical Instruments

Dwivedi, Vivek H.↗

NASA NTRSDate not supplied

Conceptual Design of a Test Section for a Cryogenic Transfer Line Experiment

This project presents the development of a comprehensive computer-aided design (CAD) model for the Transfer Line test section, which is an upcoming test module for the Flow Boiling and Condensation Experiment (FBCE) aboard the International Space Station. The FBCE aims to serve as the primary platform to study two-phase flow in microgravity, and the Transfer Line module aims to utilize its existing hardware to study cryogenic chilldown; a critical component of cryogenic propellant transfer in space. The CAD model was created using SolidWorks software and includes the test section’s main components: a heat transfer line, a flow visualization line, insulation, high-speed visible imaging, and infrared imaging. The heat transfer line primarily consists of a stainless steel tube that will be heated via Joule heating. The flow visualization line consists of segmented Indium-Titanium-Oxide coated sapphire tubes, which allow for visualization of flow regimes by high-speed and infrared cameras, similar thermal properties as the stainless steel tube, and Joule heating via the ITO coating resistance. Polyether Ether Ketone was used to insulate and encapsulate the two sections. High-speed visible imaging and infrared imaging were also incorporated to view the propagation of fluid during inverted annular flow and map out the thermal profile of the ITO-coated sapphire tube. This model serves as the guiding concept design for the Transfer Line project and will assist the project team during future safety reviews and concept design reviews. Overall, this work is significant in two-phase flow research and offers a promising path towards an established facility for cryogenic transfer line research in microgravity.

Flow boiling↗

NASA NTRSDate not supplied

Designing the Imaging and Breadboard System for FBCE-TL Project

This presentation outlines the support work done on designing the imaging and breadboard system of the Transfer Line (TL) project, which is the third module for the Flow Boiling and Condensation Experiment (FBCE) operating in the Fluids Integrated Rack on-board the International Space Station (ISS). The goal of the FBCE is to serve as a facility for flow boiling and condensation investigating two-phase flow and heat transfer data in microgravity. The TL module aims use existing FBCE hardware to study cryogenic chilldown, a large component of cryogenic propellant tank transfer research. The TL test module will perform chilldown studies with normal-perfluorohexane (nPFH), a cryogenic simulant, flowing through a super-heated line, which is heated through the process of Joule-heating. SolidWorks and Creo were used to create electrically conductive pipe junctions that connect and seal several Indium Tin Oxide (ITO) coated sapphire tube sections together to allow for low leak probability fluid flow and circumferentially uniform electrical current density. It is necessary to understand and calculate the thermal expansion of the tubing sections such that the junctions would not leak at anticipated operating temperatures and pressures, would maintain electrical contact, and not crack the crystalline tubes. Optical imaging techniques were used to build an experimentally validated image remapping process for flight-like setups of cylindrical tubes. Then MATLAB was used to create an algorithm that distorts an image based on the refraction of light passing through the mediums we were imaging through to accurately visualize the cryogenic chilldown that is of scientific interest. This research will assist NASA to move forward with long-duration spaceflight missions where knowledge of efficient heat transfer processes becomes more critical.

imaging system↗

NASA NTRSDate not supplied

Visible and Infrared Imaging of Various Flow Regimes in the Flow Boiling and Condensation Experiment Transfer Line

The Flow Boiling and Condensation Experiment (FBCE) Transfer Line (TL) test module is being developed to study fluid physics of cryogenic transfer lines in microgravity. The TL module will reside in the FBCE facility located within the Fluids Integration Rack (FIR) aboard the International Space Station (ISS). TL will use the same normal perfluoro hexane (nPFH) used in the previous FBCE test sections. To simulate cryogenic line transfer in the visualization section, a sapphire tube coated with indium tin oxide (ITO) is heated via Joule heated while a bypass line is used to flow liquid nPFH at the desired inlet conditions. Once the visualization line reaches steady-state temperature and pressure conditions, flow is diverted through the heated line and chilldown begins. All flow regimes observed within a cryogenic TL are created and studied using visible imaging with diffuse backlighting to image inverted annular flow, transition, and nucleate boiling. A visible laser light sheet provided by FIR will provide a means to observe and track droplets in the dispersed flow regime. IR imaging of the visualization tube outer surface with the emissivity of the ITO coating provides the surface chilldown temperature profile. Preliminary imaging system development includes some of the components used in the Flow Boiling Module (FBM) and some new components that are easily integrated into the PC-based system but will require some refinement to operate properly on the FIR PCIe/104 imaging system. Optical design and packaging within the limited volume of the module enclosure is also presented. This paper presents FBCE-TL visible and infrared laboratory-based imaging studies and anticipated visualization capabilities of the TL module under preliminary breadboard development and under the utilization constraints within the FBCE/FIR host facility.

transfer line↗

NASA NTRSDate not supplied

Overview of Results from the MISSE 9-15 Polymers and Composites Experiment 1-4 (PCE 1-4)

Spacecraft in low Earth orbit (LEO) and other planetary orbits are subjected to harsh environmental conditions that can result in erosion, embrittlement and optical property degradation of susceptible materials threatening spacecraft performance and durability. To increase our understanding of space environmental effects on spacecraft materials, NASA Glenn Research Center has developed a series of experiments flown as part of the Materials International Space Station Experiment (MISSE) missions on the exterior of the International Space Station (ISS). Four Glenn experiments with 365 flight samples were flown on ISS’s MISSE-Flight Facility (MISSE-FF). These experiments are the Polymers and Composites Experiment-1 (PCE-1) flown as part of the MISSE-9 mission, the PCE-2 flown as part of the MISSE-10 mission, the PCE-3 flown as part of the MISSE-12 and MISSE-15 missions, and the PCE-4 flown as part of the MISSE-13 mission. The PCE 1-4 flight samples were flown in either ram, wake, zenith or nadir flight orientations. The primary objectives of the PCE 1-4 experiments are to determine the LEO atomic oxygen (AO) erosion yield, Ey (volume loss per incident oxygen atom) and radiation durability of spacecraft polymers, composites and coatings. In addition, each experiment has a wide variety of materials with numerous sample objectives. This presentation provides an overview of the PCE 1-4 experiments, the numerous sample collaborators, the space environmental exposure of the flight samples, and an overview of the post-flight observations and results. The results include AO fluence and contamination analyses for each mission flight orientation, erosion data for the PCE 1-4 AO Ey samples, optical property data, and tensile results for the MISSE-9 and MISSE-13 tensile samples. In addition, an introduction of results from other unique samples such as indium tin oxide (ITO) coated thermal control samples, shape memory polymer composites, melanin based composites, and specialty coatings, will be provided.

Atomic oxygen↗

DOE OSTI2020

CdSexTe1-x /CdTe Devices With Reduced Interface Recombination Through Novel Back Contacts and Doping Strategies

In order to study rear interface recombination in CdSexTe1-x/CdTe solar cells, several back contact structures were fabricated using combinations of tellurium, alumina, amorphous silicon, and indium tin oxide. Film side Time-Resolved Photoluminescence measurements were taken to measure carrier lifetimes and interface recombination at the back interface. We show increasingly improved interface passivation through the subsequent use of alumina, amorphous silicon, and ITO. Additionally, we provide evidence that an arsenic-doped absorber forms a better interface with numerous back contact structures. Reductions in the back interface recombination velocity are shown to correlate with improvements in device external radiative efficiency.

13 HYDRO ENERGY↗

DOE OSTI2020

Organic-semiconducting hybrid solar cell

The embodiment of this invention lies on experimental evidence of photoconductivity activity of a hybrid solar cell, organic/chalcogenide. The device is made of thin layers of conductive indium-tin-oxide (ITO) on glass with a 100 nm layer of chalcogenide molybdenum di-sulfide (MoS 2 ) and a thin layer of about ˜50 nm of complex organic compound assembled at room temperature. The device was tested to conventional electrical transport measurements in the regime of −1V to 1V under electromagnetic radiation simulator at 100 mW/cm 2 . Results indicate solar conversion efficiency of 2.48% and current density of 6.35 mA/cm 2 .

14 SOLAR ENERGY↗

DOE OSTI2021

Materials for controlling the epitaxial growth of photoactive layers in photovoltaic devices

There is disclosed ultrathin film material templating layers that force the morphology of subsequently grown electrically active thin films have been found to increase the performance of small molecule organic photovoltaic (OPV) cells. There is disclosed electron-transporting material, such as hexaazatriphenylene-hexacarbonitrile (HAT-CN) can be used as a templating material that forces donor materials, such as copper phthalocyanine (CuPc) to assume a vertical-standing morphology when deposited onto its surface on an electrode, such as an indium tin oxide (ITO) electrode. It has been shown that for a device with HAT-CN as the templating buffer layer, the fill factor and short circuit current of CuPc:C60 OPVs were both improved compared with cells lacking the HAT-CN template. This is explained by the reduction of the series resistance due to the improved crystallinity of CuPc grown onto the ITO surface.

Forrest, Stephen R.↗

DOE OSTI2025

Cobalt promotion of the InO x –TiO 2 heterojunction for dual photothermal reduction of CO 2

A series of cobalt-promoted indium–titanium composite oxides was synthesized using a microemulsion method. Their functional properties were investigated for the photothermal reduction of carbon dioxide. In this series, the indium content varied between 2.5 and 20%, while the cobalt percentage was kept constant at 4% throughout the series. In all cases, carbon monoxide formation occurred selectively through the reverse water gas shift reaction. The sample with 2.5% In maximized the synergistic use of the two energy sources, while the sample with 10% In showed the highest catalytic activity under both thermal and dual photo-thermo conditions. A physicochemical characterization was performed for all samples. The use of microscopy and X-ray absorption spectroscopy demonstrated that sub-nanometric indium entities, in combination with atomically dispersed cobalt oxide entities, achieved a balance between high thermal activity and significant synergy between light and heat in a catalytic process. The system with 10% indium is thus able to improve the thermal catalytic process through the use of light, providing an intensification procedure for the classic process.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1998

Synthesis and Structural Characterization of Tris(dimethyldithiocarbamate)Indium(III), In[S2CN(CH3)2]3

The synthesis and structure of the indium dithiocarbamate, In[SCN(CH3)2]3*1/2 4-mepy (4-mepy = 4-methylpyridine), is described. Indium metal was oxidized by tetramethylthiuramdisulfide in 4-methylpyridine at 25C to form a new, homoleptic indium(HI) dithiocarbamate in yields exceeding 60%. In[S2CN(CH3)213 exists as a discrete molecule with a distorted-octahedral geometry. The compound crystallizes in the P 1-bar (No. 2) space group with a = 9.282(l)A, b = 10.081(1)A, c = 12.502 A, alpha= 73.91 (1) degrees, beta = 70.21(1) degrees, gamma = 85.84(1) degrees, Z = 2,v(A(exp 3)) =1057.3(3), R = 0.046, and R(sub w) = 0.061.

Clark, Eric B.↗

NASA NTRS1998

Synthesis and Structural Characterization of Tris(dimethyldithicarbamate)Indium(III), In[S2CN(CH3)2]3

The synthesis and structure of the indium dithiocarbamate, In[S2CN(CH3)2]30 central dot 1/2 4- mepy (4-mepy = 4-methylpyridine), is described. Indium metal was oxidized by tetramethylthiuramdisulfide in 4-methylpyridine at 25 C to form a new, homoleptic indium(III) dithiocarbamate in yields exceeding 60%. In[S2CN(CH3)2]3 exists as a discrete molecule with a distorted-octahedral geometry. The compound crystallizes in the P 1-bar (No. 2) space group with a = 9.282(l) A, b = 10.081 (1) A, c, c = 12.502 A, alpha = 73.91 (1)(sup 0), beta = 70.21(1)(sup 0), gamma = 85.84(1)(sup 0), Z = 2, V (A(sup 3) = 1057.3(3), R = 0.046, and R(sub w) = 0.061.

Clark, Eric B.↗

DOE OSTI2020

Ultraviolet to far-infrared dielectric function of n -doped cadmium oxide thin films

Spectroscopic ellipsometry and Fourier transform infrared spectroscopy were applied to extract the ultraviolet to far-infrared (150 – 33333 cm -1 ) complex dielectric functions of high-quality, sputtered indium-doped cadmium oxide (In:CdO) thin crystalline films on MgO substrates possessing carrier densities (N d ) ranging from 1.1 x 10 19 cm -1 to 4.1 x 10 20 cm -1 . A multiple oscillator fit model was used to identify and analyze the three major contributors to the dielectric function and their dependence on doping density: interband transitions in the visible, free-carrier excitations (Drude response) in the near- to far-infrared, and IR-active optic phonons in the far-infrared. More specifically, values pertinent to the complex dielectric function such as the optical band gap (E g ), are shown here to be dependent upon carrier density, increasing from approximately 2.5–3 eV, while the high-frequency permittivity (ε ∞ ) decreases from 5.6 to 5.1 with increasing carrier density. The plasma frequency (ω p ) scales as $\sqrt{N_d}$, resulting in ω p values occurring within the mid- to near-IR, and the effective mass (m *) was also observed to exhibit doping density-dependent changes, reaching a minimum of 0.11 m o in unintentionally doped films (1.1 x 10 19 cm -1 ). Good quantitative agreement with prior work on polycrystalline, higher-doped CdO films is also demonstrated, illustrating the generality of the results. The analysis presented here in this paper will aid in predictive calculations for CdO-based next-generation nanophotonic and optoelectronic devices, while also providing an underlying physical description of the key properties dictating the dielectric response in this atypical semiconductor system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1995

Design of a three-layer antireflection coating for high efficiency indium phosphide solar cells using a chemical oxide as first layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductors materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating should work well for all III-V compound-based solar cells.

Moulot, Jacques↗

NASA NTRS1995

Design of a Three-Layer Antireflection Coating for High Efficiency Indium Phosphide Solar Cells Using a Chemical Oxide as First Layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or ZnS, MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductor materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating, should work well for essentially all III-V compound-based solar cells.

Moulot, Jacques↗

DOE OSTI2020

Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

14 SOLAR ENERGY↗

DOE OSTI2023

Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors

Charge transport in amorphous semiconductors is considerably more complicated than the process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are important to unveiling electronic properties. Here, we report gigahertz conductivity mapping in amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors by microwave impedance microscopy (MIM), which probes conductivity without Schottky barrier’s influence. The difference between the dc and microwave conductivities reflects the efficacy of the injection barrier in an accumulation-mode transistor. The conductivity exhibits significant nanoscale inhomogeneity in the subthreshold regime, presumably due to trapping and release from localized states. The characteristic length scale of local fluctuations, as determined by the autocorrelation analysis, is about 200 nm. Using a random-barrier model, we can simulate the spatial variation of the potential landscape, which underlies the mesoscopic conductivity distribution. Furthermore, our work provides an intuitive way to understand the charge transport mechanism in amorphous semiconductors at the microscopic level.

36 MATERIALS SCIENCE↗