SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Epitaxial deposition of P-type silicon into etche grooves in N-type silicon for P-N junction for complimentary MOS-FET devices
Thin film vacuum deposited junctions
Effects of mechanical stress on breakdown voltage of p-n junctions
Equivalence of stress and electron-irradiation induced defects in degenerate p-n germanium junctions as indicated in similar voltage-anneal characteristics
Theoretical model for effect of mechanical stress on generation-recombination currents in p-n junctions
Effectiveness parameters of spherical shield electrode surrounding negative dielectric junction of insulator in high vacuum
Mechanisms of charge carrier mobility in thin polycrystalline film junctions
Compressive stress effect on band gap widening and diffusion current in GaAs junctions
Electron mobility and lifetime variations effects on drift field in silicon junction devices
Image-force effects in normal state tunneling through lead-oxide-lead junctions exhibiting Josephson effect
The ability to controllably fabricate High-Temperature Superconductor (HTS) S-Normal-S (SNS) Josephson Juntions (JJ's) enhances the possibilities fro many applications, including digital circuits, SQUID's, and mixers. A wide variety of approaches to fabricating SNS-like junctions has been tried and analyzed in terms of proximity effect behavior.
The data is reviewed about superconductor-normal-superconductor (SNS) devices, and the conclusion is drawn that there is no conventional proximity effect in the majority of reported high Tc devices. The present experimental and theoretical understanding of SNS junctions is discussed as well as implications for future research.
The most sensitive heterodyne receivers used for millimeter wave and submillimeter wave radioastronomy employ superconductor-insulator-superconductor (SIS) tunnel junctions as the nonlinear mixing element.
So far, the most sensitive heterodyne receivers in the millimeter-wave and submillimeter-wave frequency ranges have used the mixing response of the quasiparticle currents in SIS tunnel junctions.
We discuss the material processing limits of superconductor-insulator-superconductor (SIS) junctions with an energy gap high enough to enable THz heterodyne mixer detection.
The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell
At the 42nd PVSC, our team presented recent advances in our space photovoltaic concentrator technology. These advances include more robust Fresnel lenses for optical concentration, more thermally conductive graphene radiators for waste heat rejection, improved color-mixing lens technology to minimize chromatic aberration losses with 4-junction solar cells, and an articulating photovoltaic receiver enabling single-axis sun-tracking, while maintaining a sharp focal line despite large beta angles of incidence. In the past year, under a NASA Phase II SBIR program, our team has made much additional progress in the development of this new space photovoltaic concentrator technology, as described in this paper.
The purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.