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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Searching for Grid-Forming Technologies That Do Not Impact Protection Systems: A promising technology

The design of legacy-line protection elements has been guided by the behavior of synchronous machines during faults. Because of the significant field-winding inductance and rotating mass, the magnitude, angular frequency, and phase angle of the back-electromotive force (EMF) voltage waveforms of synchronous machines remain practically constant for several hundreds of milliseconds after a fault occurs. Furthermore this has facilitated the engineering of the memory-polarization technique in mho distance elements, which has been effective for machine-dominant power grids. However, this assumption is no longer held for inverter-based resources (IBRs) because of the lack of field winding and moment of inertia in power electronics devices. Notably, the negative-sequence directional overcurrent protection and the quadrilateral distance elements have been impacted by early IBRs with grid-following (GFL) controls because they did not inject negative-sequence currents during asymmetrical faults.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Emerging applications: Neuromorphic computing and reservoir computing

The emergence of doped hafnium oxide (HfO 2 )-based ferroelectric films has enabled highly scalable and silicon-compatible ferroelectric devices, opening new frontiers in neuromorphic and reservoir computing. Among these, ferroelectric field-effect transistors (FeFETs) are particularly promising due to their analog memory characteristics and unique polarization dynamics. These properties make FeFETs ideal candidates for artificial synapses in neuromorphic architectures, supporting deep neural networks and spiking neural networks based on leaky-integrate-and-fire (LIF) mechanisms. Beyond neuromorphic computing, FeFETs also play a crucial role in physical reservoir computing, leveraging their intrinsic nonlinear and history-dependent behavior for efficient real-time learning. This approach offers significant advantages for time-series processing and edge artificial intelligence (AI) applications, addressing the growing need for energy-efficient computing. As a result, this article explores the principles, key demonstrations, and future potential of FeFET-based neuromorphic and reservoir computing, highlighting their impact on next-generation AI hardware.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Measuring the Energy Consumption and Efficiency of Deep Neural Networks: An Empirical Analysis and Design Recommendations

Addressing the "Red-AI" trend of rising energy consumption by large-scale neural networks, this study investigates the measured energy consumption of training various fully connected neural network architectures. We introduce the BUTTER-E dataset, an augmentation to the BUTTER Empirical Deep Learning dataset, containing energy consumption and performance data from 41,129 individual experimental runs spanning 30,582 distinct configurations: 13 datasets, 20 sizes (trainable parameters), 8 "shapes", and 14 depths on both CPUs and GPUs using node-level watt-meters. This dataset reveals the complex relationship between dataset size, network structure, and energy use. Our analysis uncovers a surprising, hardware-mediated non-linear relationship between energy efficiency and network design, challenging the assumption that reducing the number of parameters or FLOPs is the best way to achieve greater energy efficiency. We propose a straightforward and effective energy model that accounts for network size, computing, and memory hierarchy. Highlighting the need for cache-considerate algorithm development, we suggest a codesign approach to energy efficient network, algorithm, and hardware design. This work contributes to the fields of sustainable computing and Green AI, offering practical guidance for creating more energy-efficient neural networks and promoting sustainable AI.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design

Alpha particles are known to be a major source of particles creating soft errors in semiconductor devices, such as content flipping in Static Random-Access Memory (SRAM). Recent advancements in transistor nodes have led to the introduction of Gate-All-Around Field Effect Transistors (GAA-FETs), which have better gate control, thus better electrostatics. Moreover, the introduction of bottom dielectric isolation (BDI) eliminates substrate leakage and thus is expected to enhance its radiation hardness. It is thus important to explore if one can design an SRAM that is completely radiation-hard to alpha particles. In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design an SRAM using GAA-FET technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LET max , for the alpha particle in Si and Si x Ge 1-x . Based on that, by de signing a sub-7nm GAA-FET-based SRAM with BDI, we show that the SRAM does not flip even if the particle strike is in the worst-case scenario for LET > LET max .

42 ENGINEERING↗
DOE OSTI2025

Wireless Patch Antenna Characterization for Live Health Monitoring Using Machine Learning

Temperature monitoring in extreme environments, such as coal-fired power plants, was addressed by designing and testing wireless patch antennas for use in machine learning-aided temperature estimation. The sensors were designed to monitor the temperature and health of boiler systems. Wireless interrogation of the sensor was performed using a Vector Network Analyzer (VNA) and a pair of interrogation antennas to capture resonance behavior under varying thermal and spatial conditions with sensitivities ranging from 0.052 to 0.20 $\frac{𝑀𝐻𝑧}{°C}$. Sensor calibration was conducted using a Long Short-Term Memory (LSTM) model, which leveraged temporal patterns to account for hysteresis effects. The calibration method demonstrated improved performance when combined with an LSTM model, achieving up to a 76% improvement in temperature estimation error when compared with Linear Regression (LR). The experiments highlighted an innovative solution for patch antenna-based non-contact temperature measurement, which addresses limitations with conventional methods such as RFID-based systems, infrared, and thermocouples.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2021

Intermittent fasting enhances long-term memory consolidation, adult hippocampal neurogenesis, and expression of longevity gene Klotho

Daily calorie restriction (CR) and intermittent fasting (IF) enhance longevity and cognition but the effects and mechanisms that differentiate these two paradigms are unknown. We examined whether IF in the form of every-other-day feeding enhances cognition and adult hippocampal neurogenesis (AHN) when compared to a matched 10% daily CR intake and ad libitum conditions. After 3 months under IF, female C57BL6 mice exhibited improved long-term memory retention. IF increased the number of BrdU-labeled cells and neuroblasts in the hippocampus, and microarray analysis revealed that the longevity gene Klotho (Kl) was upregulated in the hippocampus by IF only. Furthermore, we found that downregulating Kl in human hippocampal progenitor cells led to decreased neurogenesis, whereas Kl overexpression increased neurogenesis. Finally, histological analysis of Kl knockout mice brains revealed that Kl is required for AHN, particularly in the dorsal hippocampus. These data suggest that IF is superior to 10% CR in enhancing memory and identifies Kl as a novel candidate molecule that regulates the effects of IF on cognition likely via AHN enhancement.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2022

Thin liquid film as an optical nonlinear-nonlocal medium and memory element in integrated optofluidic reservoir computer

Understanding light–matter interaction lies at the core of our ability to harness physical effects and to translate them into new capabilities realized in modern integrated photonics platforms. Here, we present the design and characterization of optofluidic components in an integrated photonics platform and computationally predict a series of physical effects that rely on thermocapillary-driven interaction between waveguide modes and topography changes of optically thin liquid dielectric film. Our results indicate that this coupling introduces substantial self-induced phase change and transmittance change in a single channel waveguide, transmittance through the Bragg grating waveguide, and nonlocal interaction between adjacent waveguides. We then employ the self-induced effects together with the inherent built-in finite relaxation time of the liquid film, to demonstrate that the light-driven deformation can serve as a reservoir computer capable of performing digital and analog tasks, where the gas–liquid interface operates both as a nonlinear actuator and as an optical memory element.

42 ENGINEERING↗
DOE OSTI2020

Tunneling electroresistance effects in epitaxial complex oxides on silicon

Complex oxide-based ferroelectric tunnel junctions (FTJs) show excellent nonvolatile memory characteristics promising for emerging technology. However, integration of these epitaxially grown FTJs electrically with a silicon substrate remains challenging due to their incompatible lattice structures and poor electronic interfaces resulting from the direct synthesis techniques. Here, we present an epitaxial SrRuO 3 /PbZr 0.2 Ti 0.8 O 3 /SrRuO 3 FTJ integrated electrically with a doped silicon substrate after a layer transfer process. The tunnel currents of the FTJ on silicon show a large tunneling electroresistance (~1×10 5 %) effect, which is explained by a numerical FTJ model incorporating pinned dipoles at the interfaces. This proof of concept of the integration of functional oxide heterostructures with silicon opens a pathway to beyond-CMOS computing devices using unconventional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A low-rank power iteration scheme for neutron transport criticality problems

Computing effective eigenvalues for neutron transport often requires a fine numerical resolution. Here, the main challenge of such computations is the high memory effort of classical solvers, which limits the accuracy of chosen discretizations. In this work, we derive a method for the computation of effective eigenvalues when the underlying solution has a low-rank structure. This is accomplished by utilizing dynamical low-rank approximation (DLRA), which is an efficient strategy to derive time evolution equations for low-rank solution representations. The main idea is to interpret the iterates of the classical inverse power iteration as pseudo-time steps and apply the DLRA concepts in this framework. In our numerical experiment, we demonstrate that our method significantly reduces memory requirements while achieving the desired accuracy. Analytic investigations show that the proposed iteration scheme inherits the convergence speed of the inverse power iteration, at least for a simplified setting.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Verbal Learning and Memory Deficits across Neurological and Neuropsychiatric Disorders: Insights from an ENIGMA Mega Analysis

Deficits in memory performance have been linked to a wide range of neurological and neuropsychiatric conditions. While many studies have assessed the memory impacts of individual conditions, this study considers a broader perspective by evaluating how memory recall is differentially associated with nine common neuropsychiatric conditions using data drawn from 55 international studies, aggregating 15,883 unique participants aged 15–90. The effects of dementia, mild cognitive impairment, Parkinson’s disease, traumatic brain injury, stroke, depression, attention-deficit/hyperactivity disorder (ADHD), schizophrenia, and bipolar disorder on immediate, short-, and long-delay verbal learning and memory (VLM) scores were estimated relative to matched healthy individuals. Random forest models identified age, years of education, and site as important VLM covariates. A Bayesian harmonization approach was used to isolate and remove site effects. Regression estimated the adjusted association of each clinical group with VLM scores. Memory deficits were strongly associated with dementia and schizophrenia (p < 0.001), while neither depression nor ADHD showed consistent associations with VLM scores (p > 0.05). Differences associated with clinical conditions were larger for longer delayed recall duration items. By comparing VLM across clinical conditions, this study provides a foundation for enhanced diagnostic precision and offers new insights into disease management of comorbid disorders.

Neurosciences & Neurology↗
DOE OSTI2020

Distinct effects of beta-amyloid and tau on cortical thickness in cognitively healthy older adults

Published reports of associations between β-amyloid (Aβ) and cortical integrity conflict. Tau biomarkers may help elucidate the complex relationship between pathology and neurodegeneration in aging. We measured cortical thickness using magnetic resonance imaging, Aβ using Pittsburgh compound B positron emission tomography (PiB-PET), and tau using flortaucipir (FTP)-PET in 125 cognitively normal older adults. We examined relationships among PET measures, cortical thickness, and cognition. Cortical thickness was reduced in PiB+/FTP+ participants compared to the PiB+/FTP– and PiB–/FTP– groups. Continuous PiB associations with cortical thickness were weak but positive in FTP– participants and negative in FTP+. FTP strongly negatively predicted thickness regardless of PiB status. FTP was associated with memory and cortical thickness, and mediated the association of PiB with memory. Past findings linking Aβ and cortical thickness are likely weak due to opposing effects of Aβ on cortical thickness relative to tau burden. Tau, in contrast to Aβ, is strongly related to cortical thickness and memory.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2020

Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films

Two-dimensional polyimide covalent organic framework (2D PI-NT COF) films were constructed on indium tin oxide-coated glass substrates to fabricate two-terminal sandwiched resistive memory devices. The 2D PI-NT COF films condensated from the reaction between 4,4',4"-triaminotriphenylamine and naphthalene-1,4,5,8-tetracarboxylic dianhydride under solvothermal conditions demonstrated high crystallinity, good orientation preference, tunable thickness, and low surface roughness. The well-aligned electron-donor (triphenylamine unit) and -acceptor (naphthalene diimide unit) arrays rendered the 2D PI-NT COF films a promising candidate for electronic applications. The memory devices based on 2D PI-NT COF films exhibited a typical write-once-read-many-time resistive switching behavior under an operating voltage of +2.30 V on the positive scan and -2.64 V on the negative scan. A high ON/OFF current ratio (>10 6 for the positive scan and 10 4 -10 6 for the negative scan) and long-term retention time indicated the high fidelity, low error, and high stability of the resistive memory devices. The memory behavior was attributed to an electric field-induced intramolecular charge transfer in an ordered donor-acceptor system, which provided the effective charge-transfer channels for injected charge carriers. Furthermore, this work represents the first example that explores the resistive memory properties of 2D PI-COF films, shedding light on the potential application of 2D COFs as information storage media.

2D covalent organic framework film↗
DOE OSTI2023

Identifying quenched jets in heavy ion collisions with machine learning

Measurements of jet substructure in ultra-relativistic heavy ion collisions suggest that the jet showering process is modified by the interaction with the quark-gluon plasma. Modifications of the hard substructure of jets can be explored with modern data-driven techniques. In this study, a machine learning approach to the identification of quenched jets is designed. Jet showering processes are simulated with a jet quenching model JEWEL and a non-quenching model PYTHIA 8. Sequential substructure variables are extracted from the jet clustering history following an angular-ordered sequence and are used in the training of a neural network built on top of a long short-term memory network. We show that this approach successfully identifies the quenching effect in the presence of the large uncorrelated background of soft particles created in heavy-ion collisions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Improved Evaluation of Large Network Matrices for Linear Power Flow Within Optimization Problems

This work presents methods for evaluating the Power Transfer Distribution Factor (PTDF) and Line Outage Distribution Factor (LODF) matrices by employing sparse linear algebra for large-scale computing applications. These matrices play a critical role in many power system applications, such as the Unit Commitment Problem (UC), pre- and post-contingency power flow analysis, and transmission expansion. These matrices are typically dense, which means they require a significant amount of time and memory to be computed for large networks. However, by analyzing the structure of the matrices and their computation method, it is possible to use reduced memory methods based on sparse matrix operations. This paper shows that sparse linear algebra algorithms are faster and require less memory and time than traditional dense approaches. Additionally, we explore the effect of matrix sparsification by eliminating trailing digits on power flow calculations.

large scale↗
DOE OSTI2020

Layer-Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation

In this paper, we studied the total ionization dose (TID) effects on the multilevel-cell (MLC) 3-D NAND flash memory using Co-60 gamma radiation. We found a significant page-to-page bit error variation within a physical memory block of the irradiated memory chip. Our analysis showed that the origin of the bit error variation is the unique vertical layer-dependent TID response of the 3-D NAND. We found that the memory pages located at the upper and lower layers of the 3-D stack show higher fails compared to the middle-layer pages of a given memory block. We confirmed our findings by comparing radiation response of four different chips of the same specification. In addition, we compared the TID response of the MLC 3-D NAND with that of the 2-D NAND chip, which showed less page-to-page variation in bit error within a given memory block. We discuss the possible application of our findings for the radiation-tolerant smart memory controller design.

3-D NAND flash↗
DOE OSTI2019

Analytical Modeling of Cache Behavior for Affine Programs

Modern optimizing compiler design integrates program transformation strategies aimed at reducing data movement to/from main memory by exploiting the data cache hierarchy. But in reality, the effect of these transformations on the actual cache miss count is ignored in compilers due to the lack of precise compile-time models of misses for hierarchical caches. The current state of practice for cache miss analysis is based on accurate simulation. However, simulation requires time proportional to the dataset/problem size as well as the number of distinct cache configurations of interest to be evaluated. This paper takes a fundamentally different approach, made possible by focusing on polyhedral programs with static control flow: instead of relying on costly simulation, this paper develops the first closed-form solution for exact modeling of misses in a set-associative cache hierarchy. It enabling simulation-less selection of program transformations at compile-time to optimize cache misses. A push-button tool implementing the approach is developed and used for extensive validation of the complete framework.

affine programs, cache modeling, set associativity↗
DOE OSTI2020

Back-Stress and Its Evolution during Primary Creep in Particle Strengthened Nickel Superalloys

According to Eshelby’s theory, inelastically inhomogeneous inclusions in a metallic matrix give rise to a distribution of internal stresses. In the case of particle strengthened materials, such as nickel base superalloys, the presence and evolution of this back-stress leads to various observable effects, such as primary creep, back-flow upon loading, and memory of prior deformation. This article presents the background of the concept of back-stress and how it applies to the scenario of creep. A derivation of an evolution equation for back-stress in the context of primary creep is also presented. The results from neutron diffraction with in-situ creep experiments on directionally solidified nickel superalloys are presented in order to demonstrate the validity of the proposed equation and the corollaries derived therefrom.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Improved Evaluation of Large Network Matrices for Linear Power Flow Within Optimization Problems: Preprint

This work discusses methods for evaluating the Power Transfer Distribution Factor (PTDF) and Line Outage Distribution Factor (LODF) matrices by employing sparse linear algebra for large-scale computing applications. These matrices are critical in many power systems applications, such as the Unit Commitment Problem (UC), pre- and post-contingency power flow analysis, and transmission expansion. These matrices are typically dense, which means they require a significant amount of time and memory to be computed for large networks. However, by analyzing the structure of the matrices and their computation method, it is possible to use reduced memory methods based on sparse matrix operations. This paper shows that sparse linear algebra algorithms are faster and require less memory and time than traditional dense approaches. Additionally, we explore the effect of matrix sparsification by eliminating trailing digits on power flow calculations.

ENERGY PLANNING, POLICY, AND ECONOMY↗