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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Proposed linear actuator includes ball-screw mechanism made to engage or disengage piston as needed. Requires low power to maintain release and no power to maintain engagement. Pins sliding radially in solenoids in yoke engage or disengage slot in piston. With help of optoelectronic feedback, yoke made to follow free piston during disengagement so always in position to "grab" piston.
Technique for remote measurement of thickness of ice layer on surface proposed. Surfaces measured optoelectronically. Radiation in three near-infrared wavelength bands scattered from both test spot and nearby reference spot, and ratios of intensities compared to determine thickness of ice. Technique applicable to all surfaces appropriately lit with adequate radiation in three preselected bands. Useful in variety of applications, including aerospace applications, research, and measurement of ice thicknesses on aircraft surfaces.
Optoelectronic and electro-optical crossbar switches called "permutation engines" (PE's) developed to route packets of data through fiber-optic communication networks. Basic network concept described in "High-Speed Optical Wide-Area Data-Communication Network" (NPO-18983). Nonblocking operation achieved by decentralized switching and control scheme. Each packet routed up or down in each column of this 5-input/5-output permutation engine. Routing algorithm ensures each packet arrives at its designated output port without blocking any other packet that does not contend for same output port.
Automated variable-polarity plasma arc (VPPA) welding apparatus operates under electronic supervision by welding analysis and control system. System performs all major monitoring and controlling functions. It acquires, analyzes, and displays weld-quality data in real time and adjusts process parameters accordingly. Also records pertinent data for use in post-weld analysis and documentation of quality. System includes optoelectronic sensors and data processors that provide feedback control of welding process.
Monolithic optoelectronic integrated circuit converts multiplexed digital optical signals into electrical signals, separates, and distributes them to intended destinations. Developed to deliver phase and amplitude commands to monolithic microwave integrated circuits (MMIC's) at elements of millimeter-wave phased-array antenna from single optical fiber driven by external array controller. Also used in distribution of high-data-rate optical communications in local-area networks (LAN's). Notable features include options for optical or electrical clock inputs; outputs for raw data, addresses, and instructions for diagnosis; and optical-signal-detection circuit used to reduce power consumption by 80 percent between data-transmission times. Chip fabricated by processes available at many major semiconductor foundries. Distribution of digital signals in aircraft, automobiles, and ships potential application.
An optoelectronic system generating synchronous, strobed sheet of laser light developed for use in making visible flow of air about model helicopter rotor. Used in wind-tunnel tests to determine actual locations of vortices for comparison with locations predicted by mathematical models to validate models. Each blade tip produces vortex. By establishing successive vortex locations, researcher determines trajectory of vortex pattern. Light-sheet strobe circuits provide selection of blade positions, strobe-pulse durations, and multiple pulses per revolution for rotors having two to nine blades. To make flow visible, vaporizing propylene glycol injected upstream of model. System also provides calibrated trigger delay of strobe pulses, adjustable strobe-pulse durations, selectable number of blades, and slip-sync mode to make flow visible as though in slow motion.
Ferroelectric memories with enhanced photoresponse leading to improved nondestructive optoelectronic readout and lower power demand proposed. Memories improved versions of devices described in "Rapid, Nondestructive Readout From Ferroelectric Memory" (NPO-18551). In proposed application, array of nonvolatile ferroelectric memory cells fabricated by standard very-large-scale integrated-circuit techniques and flip-bonded onto similarly fabricated array of semiconductor lasers, {see "Optically Addressable, Ferroelectric Memory With NDRO" (NPO-18573)}.
Layers of porous Si(x)Ge(1-x) buried within single crystals of Si formed by epitaxial growth of Si/Si(x)Ge(1-x)/Si structures followed by etching in solutions of HF:HNO3:H2O. Electroluminescence from these layers utilized in novel optoelectronic devices.
Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).
A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI(sub 2) and II-IV-V(sub 2) semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI(sub 2) and II-IV-V(sub 2) compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSi(x)Ge(1-x)P2 alloys lattice matching Si or GaP substrates are reviewed. Also, heterostructures of Cu(z)Ag(1-z)GaS2 alloys that lattice-match Si, Ge, GaP, or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V(sub 2) compounds and group IV elements are realized, II-IV-V(sub 2) alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSi(x)Ge(1-x)P2.
The basic data of the automatic space station ALMAZ-1B is overviewed, including the orbit parameters and maximum power. The principal technical characteristics of its remote sensing equipment is listed for the synthetic aperture and side-looking radar, optoelectronic equipment for stereophotography, high-resolution electronic scanner, middle-resolution optomechanical scanner, spectroradiometer for ocean satellite monitoring, and information transmission and reception. The main objectives and uses of the ALMAZ-1B information are cartography, land monitoring, geology, ecological monitoring, oceanology, pilotage, fishery, and information supply during an emergency such as controlling situation in natural disasters.
A unipolar terminal-attractor based neural associative memory (TABAM) system with adaptive threshold for perfect convergence is presented. By adaptively setting the threshold values for the dynamic iteration for the unipolar binary neuron states with terminal-attractors for the purpose of reducing the spurious states in a Hopfield neural network for associative memory and using the inner product approach, perfect convergence and correct retrieval is achieved. Simulation is completed with a small number of stored states (M) and a small number of neurons (N) but a large M/N ratio. An experiment with optical exclusive-OR logic operation using LCTV SLMs shows the feasibility of optoelectronic implementation of the models. A complete inner-product TABAM is implemented using a PC for calculation of adaptive threshold values to achieve a unipolar TABAM (UIT) in the case where there is no crosstalk, and a crosstalk model (CRIT) in the case where crosstalk corrupts the desired state.
State-of-the-art diffractive optics are fabricated using e-beam lithography and dry etching techniques to achieve multilevel phase elements with very high diffraction efficiencies. One of the major challenges encountered in fabricating diffractive optics is the small feature size (e.g. for diffractive lenses with small f-number). It is not only the e-beam system which dictates the feature size limitations, but also the alignment systems (mask aligner) and the materials (e-beam and photo resists). In order to allow diffractive optics to be used in new optoelectronic systems, it is necessary not only to fabricate elements with small feature sizes but also to do so in an economical fashion. Since price of a multilevel diffractive optical element is closely related to the e-beam writing time and the number of etching steps, we need to decrease the writing time and etching steps without affecting the quality of the element. To do this one has to utilize the full potentials of the e-beam writing system. In this paper, we will present three diffractive optics fabrication techniques which will reduce the number of process steps, the writing time, and the overall fabrication time for multilevel phase diffractive optics.
A new technique has been developed for nonintrusive in situ measurement of oxygen concentration, gas temperature, and flow velocity of the test media in hypersonic wind tunnels. It is based on absorption of near-infrared radiation from inexpensive GaAlAs laser diodes used in optoelectronics industry. It is designed for simultaneous measurements along multiple lines of sight accessed by fiber optics. Molecular oxygen concentration is measured from the magnitude of absorption signals; rotational gas temperature is measured from the intensity ratio of two oxygen absorption lines; and the flow velocity is measured from the Doppler shift of the absorption line positions. This report describes the results of an extensive series of tests of the prototype instrument in laboratory flames emphasizing assessment of the instruments capabilities for quantitative measurement of O2 concentration (mole fraction) and gas temperature.
Transparent conductive thin films are required for a variety of optoelectronic applications: automotive and aircraft windows, and solar cells for space applications. Transparent conductive coatings of indium-tin-oxide (ITO)-magnesium fluoride (MgF2) and aluminum doped zinc oxide (AZO) at several dopant levels are investigated for electrical resistivity (sheet resistance), carrier concentration, optical properties, and atomic oxygen durability. The sheet resistance values of ITO-MgF2 range from 10(exp 2) to 10(exp 11) ohms/square, with transmittance of 75 to 86 percent. The AZO films sheet resistances range from 10(exp 7) to 10(exp 11) ohms/square with transmittances from 84 to 91 percent. It was found that in general, with respect to the optical properties, the zinc oxide (ZnO), AZO, and the high MgF2 content ITO-MgF2 samples, were all durable to atomic oxygen plasma, while the low MgF2 content of ITO-MgF2 samples were not durable to atomic oxygen plasma exposure.
A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film-forming material in a working device is a complex, multifaceted endeavor. It requires close attention to maintaining the optical properties of the electro-optic active portion of the polymer while manipulating the polymer structure to obtain the desired secondary polymer properties.
Issued as a companion to Johnson Space Center's Research and Technology Annual Report, which reports JSC accomplishments under NASA Research and Technology Operating Plan (RTOP) funding, this report describes 42 additional JSC projects that are funded through sources other than the RTOP. Emerging technologies in four major disciplines are summarized: space systems technology, medical and life sciences, mission operations, and computer systems. Although these projects focus on support of human spacecraft design, development, and safety, most have wide civil and commercial applications in areas such as advanced materials, superconductors, advanced semiconductors, digital imaging, high density data storage, high performance computers, optoelectronics, artificial intelligence, robotics and automation, sensors, biotechnology, medical devices and diagnosis, and human factors engineering.
The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.