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At least 271 records · Page 15

Solid-state image sensor with focal-plane digital photon-counting pixel array

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

Fossum, Eric R.↗

Focal plane infrared readout circuit

An infrared imager, such as a spectrometer, includes multiple infrared photodetectors and readout circuits for reading out signals from the photodetectors. Each readout circuit includes a buffered direct injection input circuit including a differential amplifier with active feedback provided through an injection transistor. The differential amplifier includes a pair of input transistors, a pair of cascode transistors and a current mirror load. Photocurrent from a photodetector can be injected onto an integration capacitor in the readout circuit with high injection efficiency at high speed. A high speed, low noise, wide dynamic range linear infrared multiplexer array for reading out infrared detectors with large capacitances can be achieved even when short exposure times are used. The effect of image lag can be reduced.

Pain, Bedabrata↗

Optoelectronic System Measures Distances to Multiple Targets

An optoelectronic metrology apparatus now at the laboratory-prototype stage of development is intended to repeatedly determine distances of as much as several hundred meters, at submillimeter accuracy, to multiple targets in rapid succession. The underlying concept of optoelectronic apparatuses that can measure distances to targets is not new; such apparatuses are commonly used in general surveying and machining. However, until now such apparatuses have been, variously, constrained to (1) a single target or (2) multiple targets with a low update rate and a requirement for some a priori knowledge of target geometry. When fully developed, the present apparatus would enable measurement of distances to more than 50 targets at an update rate greater than 10 Hz, without a requirement for a priori knowledge of target geometry. The apparatus (see figure) includes a laser ranging unit (LRU) that includes an electronic camera (photo receiver), the field of view of which contains all relevant targets. Each target, mounted at a fiducial position on an object of interest, consists of a small lens at the output end of an optical fiber that extends from the object of interest back to the LRU. For each target and its optical fiber, there is a dedicated laser that is used to illuminate the target via the optical fiber. The targets are illuminated, one at a time, with laser light that is modulated at a frequency of 10.01 MHz. The modulated laser light is emitted by the target, from where it returns to the camera (photodetector), where it is detected. Both the outgoing and incoming 10.01-MHz laser signals are mixed with a 10-MHz local-oscillator to obtain beat notes at 10 kHz, and the difference between the phases of the beat notes is measured by a phase meter. This phase difference serves as a measure of the total length of the path traveled by light going out through the optical fiber and returning to the camera (photodetector) through free space. Because the portion of the path length inside the optical fiber is not ordinarily known and can change with temperature, it is also necessary to measure the phase difference associated with this portion and subtract it from the aforementioned overall phase difference to obtain the phase difference proportional to only the free-space path length, which is the distance that one seeks to measure. Therefore, the apparatus includes a photodiode and a circulator that enable measurement of the phase difference associated with propagation from the LRU inside the fiber to the target, reflection from the fiber end, and propagation back inside the fiber to the LRU. Because this phase difference represents twice the optical path length of the fiber, this phase difference is divided in two before subtraction from the aforementioned total-path-length phase difference. Radiation-induced changes in the photodetectors in this apparatus can affect the measurements. To enable calibration for the purpose of compensation for these changes, the apparatus includes an additional target at a known short distance, located inside the camera. If the measured distance to this target changes, then the change is applied to the other targets.

Liebe, Carl Christian↗

Stabilizing Microwave Frequency of a Photonic Oscillator

A scheme for stabilizing the frequency of a microwave signal is proposed that exploits the operational characteristics of a coupled optoelectronic oscillator (COEO) and related optoelectronic equipment. An essential element in the scheme is a fiber mode-locked laser (MLL), the optical frequency of which is locked to an atomic transition. In this scheme, the optical frequency stability of the mode-locked laser is transferred to that of the microwave in the same device. Relative to prior schemes for using wideband optical frequency comb to stabilize microwave signals, this scheme is simpler and lends itself more readily to implementation in relatively compact, rugged equipment. The anticipated development of small, low-power, lightweight, highly stable microwave oscillators based on this scheme would afford great benefits in communication, navigation, metrology, and fundamental sciences. COEOs of various designs, at various stages of development, in some cases called by different names, have been described in a number of prior NASA Tech Briefs articles. A COEO is an optoelectronic apparatus that generates both short (picosecond) optical pulses and a steady microwave signal having an ultrahigh degree of spectral purity. The term "coupled optoelectronic" in the full name of such an apparatus signifies that its optical and electronic oscillations are coupled to each other in a single device. The present frequency-stabilization scheme is best described indirectly by describing the laboratory apparatus used to demonstrate it. The apparatus (see figure) includes a COEO that generates a comb-like optical spectrum, the various frequency components of which interfere, producing short optical pulses. This spectrum is centered at a nominal wavelength of 1,560 nm. The spectrum separation of this comb is about 10 GHz, as determined primarily by the length of an optical loop and the bandpass filter in the microwave feedback loop. The optical loop serves as microwave resonator having a very high value of the resonance quality factor (Q). The optical frequency of MLL is then stabilized by locking it to an atomic transition as described below. The COEO contains a tunable 1-nm band-pass optical filter and a piezoelectric-transducer (PZT) drum over which a stretch of fiber is wound. The 1-nm-wide pass band of the filter provides coarse tuning to overlap the frequency comb with the atomic transition frequency. Controlled stretching of the fiber by means of the PZT drum can be used in conjunction with temperature control for locking the laser frequency. To reference to an atomic resonance at 780 nm in this demonstration setup, the optical output of the COEO at 1,560 nm is fed through an erbium-doped-fiber amplifier (EDFA) to a frequency doubler in the form of a periodically poled lithium niobate (PPLN) crystal. The frequency-doubled output is combined with the output of a separate frequency-stabilized diode laser at a photodetector. As described thus far, the two 780-nm laser subsystems are nominally independent of each other and can, therefore, operate at different frequencies. Hence, at the photodetector, the two laser beams interfere, so that the output of the photodetector includes a beat note (a component at the difference between the two laser frequencies).

Maleki, Lute↗

Fiber-Optic Sensor Would Monitor Growth of Polymer Film

A proposed optoelectronic sensor system would measure the increase in thickness of a film of parylene (a thermoplastic polymer made from para-xylene) during growth of the film in a vapor deposition process. By enabling real-time monitoring of film thickness, the system would make it possible to identify process conditions favorable for growth and to tailor the final thickness of the film with greater precision than is now possible. The heart of the sensor would be a pair of fiber-optic Fabry-Perot interferometers, depicted schematically in the figure. (In principle, a single such interferometer would suffice. The proposal calls for the use of two interferometers for protective redundancy and increased accuracy.) Each interferometer would include a light source, a fiber-optic coupler, and photodetectors in a control box outside the deposition chamber. A single-mode optical fiber for each interferometer would run from inside the control box to a fused-silica faceplate in a sensor head. The sensory tips of the optical fibers would be polished flush with the free surface of the faceplate. In preparation for use, the sensor head would be mounted with a hermetic seal in a feed-through port in the deposition chamber, such that free face of the faceplate and the sensory tips of the optical fibers would be exposed to the deposition environment. During operation, light would travel along each optical fiber from the control box to the sensor head. A small portion of the light would be reflected toward the control box from the end face of each fiber. Once growth of the parylene film started, a small portion of the light would also be reflected toward the control box from the outer surface of the film. In the control box, the two reflected portions of the light beam would interfere in one of the photodetectors. The difference between the phases of the interfering reflected portions of the light beam would vary in proportion to the increasing thickness of the film and the known index of refraction of the film, causing the photodetector reading to vary in proportion to a known sinusoidal function of film thickness. Electronic means of monitoring this variation and the corresponding variation in phase and thickness are well established in the art of interferometry. Hence, by tracking the cumulative change in phase difference from the beginning of deposition, one could track the growing thickness of the film to within a small fraction of a wavelength of light.

Beamesderfer, Michael↗

CdZnTe Image Detectors for Hard-X-Ray Telescopes

Arrays of CdZnTe photodetectors and associated electronic circuitry have been built and tested in a continuing effort to develop focal-plane image sensor systems for hard-x-ray telescopes. Each array contains 24 by 44 pixels at a pitch of 498 m. The detector designs are optimized to obtain low power demand with high spectral resolution in the photon- energy range of 5 to 100 keV. More precisely, each detector array is a hybrid of a CdZnTe photodetector array and an application-specific integrated circuit (ASIC) containing an array of amplifiers in the same pixel pattern as that of the detectors. The array is fabricated on a single crystal of CdZnTe having dimensions of 23.6 by 12.9 by 2 mm. The detector-array cathode is a monolithic platinum contact. On the anode plane, the contact metal is patterned into the aforementioned pixel array, surrounded by a guard ring that is 1 mm wide on three sides and is 0.1 mm wide on the fourth side so that two such detector arrays can be placed side-by-side to form a roughly square sensor area with minimal dead area between them. Figure 1 shows two anode patterns. One pattern features larger pixel anode contacts, with a 30-m gap between them. The other pattern features smaller pixel anode contacts plus a contact for a shaping electrode in the form of a grid that separates all the pixels. In operation, the grid is held at a potential intermediate between the cathode and anode potentials to steer electric charges toward the anode in order to reduce the loss of charges in the inter-anode gaps. The CdZnTe photodetector array is mechanically and electrically connected to the ASIC (see Figure 2), either by use of indium bump bonds or by use of conductive epoxy bumps on the CdZnTe array joined to gold bumps on the ASIC. Hence, the output of each pixel detector is fed to its own amplifier chain.

Chen, C. M. Hubert↗

MOS Circuitry Would Detect Low-Energy Charged Particles

Metal oxide semiconductor (MOS) circuits for measuring spatially varying intensities of beams of low-energy charged particles have been developed. These circuits are intended especially for use in measuring fluxes of ions with spatial resolution along the focal planes of mass spectrometers. Unlike prior mass spectrometer focal-plane detectors, these MOS circuits would not be based on ion-induced generation of electrons, and photons; instead, they would be based on direct detection of the electric charges of the ions. Hence, there would be no need for microchannel plates (for ion-to-electron conversion), phosphors (for electron-to-photon conversion), and photodetectors (for final detection) -- components that degrade spatial resolution and contribute to complexity and size. The developmental circuits are based on linear arrays of charge-coupled devices (CCDs) with associated readout circuitry (see figure). They resemble linear CCD photodetector arrays, except that instead of a photodetector, each pixel contains a capacitive charge sensor. The capacitor in each sensor comprises two electrodes (typically made of aluminum) separated by a layer of insulating material. The exposed electrode captures ions and accumulates their electric charges during signal-integration periods.

Sinha, Mahadeva↗

Nanostructure Diffraction Gratings for Integrated Spectroscopy and Sensing

The present disclosure pertains to metal or dielectric nanostructures of the subwavelength scale within the grating lines of optical diffraction gratings. The nanostructures have surface plasmon resonances or non-plasmon optical resonances. A linear photodetector array is used to capture the resonance spectra from one of the diffraction orders. The combined nanostructure super-grating and photodetector array eliminates the use of external optical spectrometers for measuring surface plasmon or optical resonance frequency shift caused by the presence of chemical and biological agents. The nanostructure super-gratings can be used for building integrated surface enhanced Raman scattering (SERS) spectrometers. The nanostructures within the diffraction grating lines enhance Raman scattering signal light while the diffraction grating pattern of the nanostructures diffracts Raman scattering light to different directions of propagation according to their wavelengths. Therefore, the nanostructure super-gratings allows for the use of a photodetector array to capture the surface enhanced Raman scattering spectra.

Guo, Junpeng↗

Nanostructure Diffraction Gratings for Integrated Spectroscopy and Sensing

The present disclosure pertains to metal or dielectric nanostructures of the subwavelength scale within the grating lines of optical diffraction gratings. The nanostructures have surface plasmon resonances or non-plasmon optical resonances. A linear photodetector array is used to capture the resonance spectra from one of the diffraction orders. The combined nanostructure super-grating and photodetector array eliminates the use of external optical spectrometers for measuring surface plasmon or optical resonance frequency shift caused by the presence of chemical and biological agents. The nanostructure super-gratings can be used for building integrated surface enhanced Raman scattering (SERS) spectrometers. The nanostructures within the diffraction grating lines enhance Raman scattering signal light while the diffraction grating pattern of the nanostructures diffracts Raman scattering light to different directions of propagation according to their wavelengths. Therefore, the nanostructure super-gratings allows for the use of a photodetector array to capture the surface enhanced Raman scattering spectra.

Guo, Junpeng↗

Subnanosecond Scintillation Detector

A scintillation detector, including a scintillator that emits scintillation; a semiconductor photodetector having a surface area for receiving the scintillation, wherein the surface area has a passivation layer configured to provide a peak quantum efficiency greater than 40% for a first component of the scintillation, and the semiconductor photodetector has built in gain through avalanche multiplication; a coating on the surface area, wherein the coating acts as a bandpass filter that transmits light within a range of wavelengths corresponding to the first component of the scintillation and suppresses transmission of light with wavelengths outside said range of wavelengths; and wherein the surface area, the passivation layer, and the coating are controlled to increase the temporal resolution of the semiconductor photodetector.

Hoenk, Michael↗

Space Optical Communications Using Laser Beams

A system for communicating between an object in space and a ground station, between objects in space, or between ground stations, includes a telecentric lens. Photodetectors positioned upon a focal plane of the telecentric lens detect an inbound light beam, received from a source, that has passed through the telecentric lens to the focal plane. Lasers positioned upon the focal plane transmit light beams from the focal plane through the telecentric lens to an area that includes the source of the inbound light beam. A processor detect signals from individual photodetectors corresponding to light detected, and selectively signals individual lasers that are close to those photodetectors, resulting in a returning beam that arrives close to the source, and which carries encoded data.

Goorjian, Peter M.↗

Methods and Devices for Space Optical Communications Using Laser Beams

Light is used to communicate between objects separated by a large distance. Light beams are received in a telescopic lens assembly positioned in front of a cat's-eye lens. The light can thereby be received at various angles to be output by the cat's-eye lens to a focal plane of the cat's-eye lens, the position of the light beams upon the focal plane corresponding to the angle of the beam received. Lasers and photodetectors are distributed along this focal plane. A processor receives signals from the photodetectors, and selectively signal lasers positioned proximate the photodetectors detecting light, in order to transmit light encoding data through the cat's-eye lens and also through a telescopic lens back in the direction of the received light beams, which direction corresponds to a location upon the focal plane of the transmitting lasers.

Goorjian, Peter M.↗

Sensor Integrated Metal Dielectric Filters for Solar-Blind Silicon Ultraviolet Detectors

A filter for electromagnetic radiation including one or more dielectric spacer regions and one or more reflective regions integrated on a semiconductor substrate, the semiconductor substrate including a semiconductor photodetector, such that the filter transmits ultraviolet radiation to the semiconductor photodetector, the ultraviolet radiation having a range of wavelengths, and the filter suppresses transmission of electromagnetic radiation, having wavelengths outside the range of wavelengths, to the semiconductor photodetector.

Hoenk, Michael E.↗

The Choroidal Eye Oximeter - An instrument for measuring oxygen saturation of choroidal blood in vivo

The Choroidal Eye Oximeter is an electro-optical instrument that noninvasively measures the oxygen saturation of choroidal blood in the back of the human eye by a spectrophotometric method. Since choroidal blood is characteristic of blood which is supplied to the brain, the Choroidal Eye Oximeter can be used to monitor the amount of oxygen which is supplied to the brain under varying external conditions. The instrument consists of two basic systems: the optical system and the electronic system. The optical system produces a suitable bi-chromatic beam of light, reflects this beam from the fundus of the subject's eye, and onto a low-noise photodetector. The electronic system amplifies the weak composite signal from the photodetector, computes the average oxygen saturation from the area of the fundus that was sampled, and displays the value of the computed oxygen saturation on a panel meter.

Laing, R. A.↗

High sensitivity 1.06 micron optical receiver for precision laser range finding

Aluminum gallium antimonide avalanche photodiodes with average gain of 10, internal quantum efficiency of greater than 60%, capacitance less than 0.2pf, and dark current of less than 1 micron were designed and fabricated for use in a low noise optical receiver suitable for 2 cm accuracy rangefinding. Topics covered include: (1) design of suitable photodetector structures; (2) epitaxial growth of AlGaSb devices; (3) fabrication of photodetectors; and (4) electro-optics characterization.

Scholl, F. W.↗

Automatic visual inspection system for microelectronics

A system for automatically inspecting an integrated circuit was developed. A device for shining a scanning narrow light beam at an integrated circuit to be inspected and another light beam at an accepted integrated circuit was included. A pair of photodetectors that receive light reflected from these integrated circuits, and a comparing system compares the outputs of the photodetectors.

Micka, E. Z.↗

Coherent optical processing of synthetic aperture radar data

Consideration is given to the data processing algorithm used in synthetic aperture radar (SAR) systems. Examples are presented of radar imagery obtained with the ERIM X-band SAR system and processed with a precision optical processor. An optical recording of the data is the input to the coherent optical processing channel. The encoding technique, spatial format, and quality of the stored data are discussed. Several optical processor configurations are outlined, noting particularly the tilted-plane system. A scanning photodetector serves to convert the optical processor output image data into an electronic signal stream. Solid-state two-dimensional photodetector arrays may provide this function at increased speeds and with greater accuracy.

Cindrich, I.↗

Solar tracking system

A solar tracker for a solar collector is described in detail. The collector is angularly oriented by a motor wherein the outputs of two side-by-side photodetectors are discriminated as to three ranges: a first corresponding to a low light or darkness condition; a second corresponding to light intensity lying in an intermediate range; and a third corresponding to light above an intermediate range, direct sunlight. The first output drives the motor to a selected maximum easterly angular position; the second enables the motor to be driven westerly at the Earth rotational rate; and the third output, the separate outputs of the two photodetectors, differentially controls the direction of rotation of the motor to effect actual tracking of the Sun.

White, P. R.↗