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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Ultra Wide Bandgap Laser Addressable Photoconductors

Wide Band Gap (WBG) and Ultra Wide Band Gap (UWBG) photoconductors have the potential to meet several critical mission needs for LLNL and the broader USG due to their exceptional characteristics related to large critical electric field. In particular, high energy laser systems such as the National Ignition Facility would benefit from the development of new materials for active optical devices such as the Optically Addressable Light Valve (OALV) used in the Programmable Spatial Shaper System. Missions in Global Security would benefit from higher performance Photoconductive Semiconductor Switches for pulsed power and radiofrequency amplifiers. This project examined the suitability of both commercially available and custom synthesized semi insulating WBG and UWBG materials for several of these applications. We developed high laser damage threshold OALVs for optical systems based on several of these materials as well as new RF, pulsed power, and power electronics devices based on the same. These devices show superior power handling in terms of laser damage threshold, electric field, and power output. A number of the technologies developed have been transitioned to both internal and external customers.

42 ENGINEERING↗
DOE OSTI2024

3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

Abstract Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.

Wood, Alexander A.↗
NASA NTRS2006

Submicrosecond Power-Switching Test Circuit

A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a repetitive waveform from a signal generator, momentary closure of a push-button switch, or closure or opening of a manually operated on/off switch. In the case of a signal generator, one can adjust the frequency and duty cycle as needed to obtain the desired AC power-supply response, which one could display on an oscilloscope. Momentary switch closure could be useful for obtaining (and, if desired, displaying on an oscilloscope set to trigger on an event) the response of a power supply to a single load transient. The on/off switch can be used to switch between load states in which static-load regulation measurements are performed.

Folk, Eric N.↗
NASA NTRSDate not supplied

Fluid & Thermal Analysis of a Manifold Microchannel Heat Sink

A three-dimensional (3-D) numerical model has been developed to study the fluid flow and heat transfer through a manifold-microchannel (MMC) heat sink, a microfluidic cooling system designed as a heat dissipation solution for compact, high-powered electronic systems. An MMC consists of a 3-D manifold structure that distributes working fluid through alternating inlet and outlet manifold channels that guide the fluid to and from the microchannels, shortening the flow length and thereby, reducing the pressure drop across the system. Wide bandgap semiconductors such as silicon carbide (SiC) are increasingly utilized due to their ability to enable smaller electronic devices and components to operate more efficiently at higher frequencies. These semiconductors can greatly benefit from the MMC, which can extract all the heat produced by compact, high-powered electronics, enabling them to achieve optimal performance. The MMC also utilizes an embedded cooling approach which allows for fabrication directly within SiC-based electronics, resulting in significant mass and weight savings and lower thermal resistance than conventional heat sink designs. This paper outlines the methods used to conduct fluid and thermal analysis of different MMC configurations for flow parameters such as flow rate and inlet flow conditions. This study involves both steady state and transient thermal analysis as a gradually increasing heat flux is applied to the system over time, which is representative of the heat dissipation from the electronics over a given period. Results from the analysis show that the MMC is capable of effectively dissipating heat flux of ~100 W/cm2 while maintaining considerably low pressure drop (< 1 kPa) and thermal resistance (< 1 K/W) for certain single-phase working fluids.

manifold microchannel↗
NASA NTRSDate not supplied

Fluid & Thermal Analysis of a Manifold Microchannel Heat Sink

A three-dimensional (3-D) numerical model has been developed to study the fluid flow and heat transfer through a manifold-microchannel (MMC) heat sink, a microfluidic cooling system designed as a heat dissipation solution for compact, high-powered electronic systems. An MMC consists of a 3-D manifold structure that distributes working fluid through alternating inlet and outlet manifold channels that guide the fluid to and from the microchannels, shortening the flow length and thereby, reducing the pressure drop across the system. Wide bandgap semiconductors such as silicon carbide (SiC) are increasingly utilized due to their ability to enable smaller electronic devices and components to operate more efficiently at higher frequencies. These semiconductors can greatly benefit from the MMC, which can extract all the heat produced by compact, high-powered electronics, enabling them to achieve optimal performance. The MMC also utilizes an embedded cooling approach which allows for fabrication directly within SiC-based electronics, resulting in significant mass and weight savings and lower thermal resistance than conventional heat sink designs. This paper outlines the methods used to conduct fluid and thermal analysis of different MMC configurations for flow parameters such as flow rate and inlet flow conditions. This study involves both steady state and transient thermal analysis as a gradually increasing heat flux is applied to the system over time, which is representative of the heat dissipation from the electronics over a given period. Results from the analysis show that the MMC is capable of effectively dissipating heat flux of ~100 W/cm2 while maintaining considerably low pressure drop (< 1 kPa) and thermal resistance (< 1 K/W) for certain single-phase working fluids.

manifold microchannel↗
DOE OSTI2022

Persistent Room-Temperature Photodarkening in Cu-Doped β - Ga 2 O 3

β–Ga 2 O 3 is an ultrawide band gap semiconductor with emerging applications in power electronics. Here, the introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of Cu-doped β–Ga 2 O 3 to UV light > 4 eV is shown to cause large, persistent photo-induced darkening at room temperature. Electron paramagnetic resonance spectroscopy indicates that light exposure converts Cu 2+ to Cu 3+ , a rare oxidation state that is responsible for the optical absorption. The photodarkening is accompanied by the appearance of O–H vibrational modes in the infrared spectrum. Hybrid function calculations show that Cu acceptors can favorably complex with hydrogen donors incorporated as interstitial (Hi) or substitutional (HO) defects. When Cu Ga –HO complexes absorb light, hydrogen is released, contributing to the observed Cu 3+ species and O–H modes.

36 MATERIALS SCIENCE↗
NASA NTRS1985

Integrated Laser and Light Detector

Proposed infrared optical transmitter tracks distant beacon and automatically point transmitted beam toward beacon. Essential transmitter is integrated gallium arsenide device containing electronically-steerable semiconductor injection laser and position detector that senses direction to beacon. With satisfactory optics and sufficient power, system used for long-distance transmission.

Katz, J.↗
NASA NTRS1985

High-voltage, high-power, solid-state remote power controllers for aerospace applications

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Sturman, J. C.↗
DOE OSTI2020

Characterization of Amplification Properties of the Superconducting-Ferromagnetic Transistor

Here we report on the measurement results of the superconducting-ferromagnetic transistors (SFTs). The devices were made at Northwestern University and Hypres (SeeQC), Inc. (Nevirkovets et al., 2014; 2015). SFT is a multiterminal device with the SIS'FIFS (or SFIFS'IS) structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material, respectively) exploiting intense quasiparticle injection in order to modify the nonlinear I-V curve of a superconducting tunnel junction. SFT is capable of providing voltage, current, and power amplification while having good input/output isolation. We characterized the devices using different measurement techniques. We measured S parameters of the single- and double-acceptor devices at frequencies up to 5 MHz. Importantly, we confirmed that the isolation between the input and output of the device is quite good. However, the techniques typically employed to characterize semiconductor devices do not allow for revealing the full potential of our low-resistive SFT devices, especially those having two acceptors. In the latter case, we also tested the devices using the battery-powered current sources with floating grounds. Analyzing double-acceptor I-V curves recorded at different levels of injection currents, for an optimal load, we deduced a small-signal voltage gain of 33 and a power gain of 2.4. We suggest that further improvement of the SFT device parameters is possible in optimized devices, so that the device potentially may serve as a preamplifier for readout of output signals of cryogenic detectors and be useful as an element of other superconductor-based circuits. In addition, we used scanning transmission electron microscopy to identify some problems in the fabrication of the devices without any planarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2012

Optimal Dynamic Sub-Threshold Technique for Extreme Low Power Consumption for VLSI

For miniaturization of electronics systems, power consumption plays a key role in the realm of constraints. Considering the very large scale integration (VLSI) design aspect, as transistor feature size is decreased to 50 nm and below, there is sizable increase in the number of transistors as more functional building blocks are embedded in the same chip. However, the consequent increase in power consumption (dynamic and leakage) will serve as a key constraint to inhibit the advantages of transistor feature size reduction. Power consumption can be reduced by minimizing the voltage supply (for dynamic power consumption) and/or increasing threshold voltage (V(sub th), for reducing leakage power). When the feature size of the transistor is reduced, supply voltage (V(sub dd)) and threshold voltage (V(sub th)) are also reduced accordingly; then, the leakage current becomes a bigger factor of the total power consumption. To maintain low power consumption, operation of electronics at sub-threshold levels can be a potentially strong contender; however, there are two obstacles to be faced: more leakage current per transistor will cause more leakage power consumption, and slow response time when the transistor is operated in weak inversion region. To enable low power consumption and yet obtain high performance, the CMOS (complementary metal oxide semiconductor) transistor as a basic element is viewed and controlled as a four-terminal device: source, drain, gate, and body, as differentiated from the traditional approach with three terminals: i.e., source and body, drain, and gate. This technique features multiple voltage sources to supply the dynamic control, and uses dynamic control to enable low-threshold voltage when the channel (N or P) is active, for speed response enhancement and high threshold voltage, and when the transistor channel (N or P) is inactive, to reduce the leakage current for low-leakage power consumption.

Duong, Tuan A.↗
DOE OSTI2024

Photo-induced electron paramagnetic resonance: A means to identify defects and the defect level throughout the bandgap of ultrawide bandgap semiconductors

Ultrawide bandgap semiconductors (UWBGs) provide great promise for optical devices operating in the near to deep ultraviolet, and recently they have become a viable semiconducting material for high power electronics. From the power grid to electronic vehicles, the intention is to replace massively awkward components with the convenience of a solid state electronic “chip.” Unfortunately, the challenges faced by wide bandgap electronic materials, such as GaN and SiC, increase as the bandgap increases. A point defect, for example, can take on more charge states and energy configurations. This perspective describes a method to investigate the many charge states and their associated transitions—photo-induced electron paramagnetic resonance (photo-EPR) spectroscopy. Although not new to the study of defects in semiconductors, photo-EPR studies can probe the entire ultrawide bandgap given the appropriate light source for excitation. Examples provided here cover specific defects in UWBGs, AlN, and Ga2O3. The discussion also reminds us how the rapid pace of discovery surrounding this newest class of semiconductors is due, in part, to fundamental research studies of the past, some as far back as a century ago and some based on very different materials systems.

Physics↗
DOE OSTI2022

Record Efficiency InGaAs Thermophotovoltaic Cells For Energy Storage Applications

Utility-scale energy storage is a significant technical challenge and a key barrier to widespread adoption of renewable energy. An efficient, modular, and scalable solution can be achieved by storing energy in the form of high-temperature heat and then extracting energy, on demand, using thermophotovoltaic (TPV) cells to convert the heat back to electricity. The ideal thermal emitter temperature is determined by balancing the desire for higher power densities, high-temperature compliant materials, and efficient, cost-effective thermophotovoltaic cells, among other considerations. 0.74-eV InGaAs lattice-matched to InP is a good choice for a cell absorber, and here we describe our development of InGaAs TPV cells with efficiencies of 38.8% from an ~1850 degrees celsius source temperature. This is the highest efficiency yet measured and reported for a single-junction TPV device. This efficiency was achieved by carefully quantifying and then reducing the parasitic absorption in the semiconductor layers, and by significantly reducing the series resistance to minimize the power loss.

ENERGY STORAGE,ENGINEERING,SOLAR ENERGY↗
DOE OSTI2024

Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs

This paper evaluates the impact of the fast high gate-voltage screening technique on gate oxide reliability of commercial 1.2 kV 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) with planar and trench gate structures. The measurements are conducted on packaged devices with the intent that the results will be applicable to wafer-level screening. The threshold voltage (V th ) of SiC MOSFETs is measured before and after various screening treatments and recovery process. In addition, constant-voltage time-dependent dielectric breakdown (TDDB) measurements are performed on SiC MOSFETs to obtain the intrinsic lifetime of gate oxide. The objective of this study is to determine the optimal screening conditions and improve screening efficiency without degradation of gate oxide reliability, such as V th shift and reduced oxide intrinsic lifetime. Due to the differences in the gate oxidation process and structural design of SiC planar and trench MOSFETs, the two types of devices exhibit different oxide reliability in the screening process. The recommended screening conditions obtained in this paper reveal that SiC trench MOSFETs can accept higher screening voltages compared to SiC planar MOSFETs. Hence, it can be concluded that more efficient screening techniques can be adopted for SiC MOSFETs with thicker gate oxide to meet the requirements of industrial applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Synchrotron characterization of high-Z, current-mode x-ray detectors

Fast x-ray detectors are critical tools in pulsed power and fusion applications, where detector impulse response of a nanosecond or better is often required. Semiconductor detectors can create fast, sensitive devices with extensive operational flexibility. There is typically a trade-off between detector sensitivity and speed, but higher atomic number absorbers can increase hard x-ray absorption without increasing the charge collection time, provided carriers achieve high velocity. This paper presents x-ray pulse characterization conducted at the Advanced Photon Source of x-ray absorption efficiency and temporal impulse response of current-mode semiconductor x-ray detectors composed of Si, GaAs, and CdTe.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Fourier Analysis-Based Evolutionary Multi-Objective Multiphysics Optimization of Liquid-Cooled Heat Sinks

Optimal heat dissipation in power modules can significantly increase their power density. Removing the generated heat is critical for capturing the benefits of advanced semiconductor materials and improving the reliability of the device operation. This article proposes a design optimization method for liquid-cooled heat sinks that use a Fourier analysis-based tool and an evolutionary optimization algorithm to optimize the heat sink geometry for specified objectives. The optimized heat sink geometry is then compared with state-of-the-art solutions in literature based on finite element analysis of different designs. The proposed methodology can develop complex geometries that outperform the conventional heat sink geometries.

Sahu, Raj↗
NASA NTRS1995

JPL CMOS Active Pixel Sensor Technology

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

Space Microelectronics Image Sensors APS Digital I↗
DOE OSTI2023

Selective area doping of GaN toward high-power applications

Abstract Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

Physics↗