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In this paper, we discuss the development of this very sensitive long waelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in quantum efficiency, NEAT, uniformity, and operability.
This report presents the successful development, commissioning, and deployment of the Scintillation-Based X-ray Imager (SBXI) for the High-Resolution Turbulence (HRT) campaign at the National Ignition Facility (NIF). The SBXI system was designed to overcome the spatial resolution and efficiency limitations of conventional x-ray imaging detectors. Through careful system engineering, rigorous laboratory characterization, and experimental validation at NIF, the SBXI has demonstrated spatial resolution at the object plane of 5 μm (±0.5 μm) and a detective quantum efficiency (DQE) of 34% at 7.2 keV, both of which surpass the requirements set by the campaign, and meeting the L2 milestone. The system’s deployment enables high-fidelity imaging of fine-scale hydrodynamic instabilities, directly supporting advanced turbulence model validation and future high energy density physics research.
Use of a laser to transmit power to a photovoltaic array has been proposed many times, including significant work done at NASA Glenn during the 1990s, but until recently the technology has lagged behind the ambitious requirements. The current NASA objective of lunar polar exploration provides the need, and evolution of higher-power and more efficient lasers provides the opportunity. Exploration of the ice-bearing craters near the lunar poles, where complete absence of sunlight precludes solar power, have been identified as a significant technology challenge for NASA’s future exploration. An approach to solve this is to use a laser to send power from the illuminated crater rim to a photovoltaic receiver on a rover inside the permanently dark region. A conceptual design was done of a prototype laser power system to be included on a proposed flight demonstration of the Kilopower space reactor. For the design, the laser transmitter is mounted on a small rover capable of moving to a location in line of sight of the receiving rover, e.g., on a crater rim with a view into the permanently dark region to be explored. A 250-watt laser diode bar transmits power at 808 nm, using a 10.5 cm optical beam director. The beam is received by a GaAs solar array mounted on the exploring rover, where it is converted into electrical power at ~50% optical to electrical efficiency. For the flight demonstration, 50 meters of laser transmission was required. The design showed a total laser mass of 7.8 kg is capable of producing the beam needed, not including the thermal control system. The demonstration design demonstrates 50-m transmission, but it would be valuable to have longer point-to-point beaming on the moon. Long beam paths require higher coherence than the diode laser bars of the demonstration system. The development of high-efficiency diode-pumped fiber lasers meets this technology need: and diode-pumped fiber lasers using the Er/Yb system can be purchased commercially with overall conversion efficiency of greater than 50% at wavelength 1.06 micrometers. Two technologies for a photovoltaic converter for this wavelength are the InGaAs photovoltaic cell, using technology developed for multi-junction space solar cells, or newly-developed high-quantum efficiency silicon cells. The next step to mature the technology would be a lunar flight demonstration. In the future, this has the potential to enhance and enable future human exploration of the moon, harvesting and utilizing the ice resources of these permanently-shadowed craters.
Efficient mid-IR interband cascade (IC) lasers are developed based on 111-V semiconductor materials to cover wavelength range from 2.7 to 5.6 (mu)m. These IC lasers reuse injected electrons in cascade stages for photon generation with high quantum efficiency to achieve high output powers. Also, IC lasers have low threshold current density with very efficient use of applied voltage, resulting in reduced power consumptions. Single-mode distributed feedback lasers have been made, and integrated into aircraft and balloon instrument which made measurements of CH4 and HCI. In this work, the characteristics of IC lasers and their recent development are reviewed.
Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the Indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum barriers increase the forward voltage. In blue and green LEDs, random alloy fluctuations and V-defects play a key role in reducing the forward voltage. When V-defects are present, either naturally or intentionally introduced, they create an alternative path for carrier injection into the MQWs through the V-defect sidewalls. This injection mechanism explains the turn-on voltages of green LEDs. However, in InGaN red LEDs, these two phenomena do not reduce the forward voltage as effectively as in blue and green LEDs, and consequently, the computed forward voltage remains significantly higher than the measured one. Furthermore, currents are observed at low voltages before the turn-on voltage (V<ℏω/e=2.0 V) of red LEDs. To address this, we introduce dislocation-induced tail states in the modeling, suggesting that leakage current through these states may play a significant role both below and at turn-on voltages. The simulation also indicates that leakage carriers below turn-on accumulate, partially diffuse in the QWs, screen the polarization-induced barrier in the low injection regime, and further reduce the forward voltage. Despite these beneficial effects, a drawback of dislocation-induced tail states is the enhanced nonradiative recombination in the dislocation line region. This study provides a detailed analysis of device injection physics in InGaN QW red LEDs and outlines potential optimization strategies.
Shallow-homojunction n+/p/p+ solar cells with one-sun, AM1 conversion efficiencies as high as 12.9 percent have been fabricated in Al0.2Ga0.8As epitaxial layers grown by organometallic chemical vapor deposition on single-crystal GaAs substrates. For these cells, which have n+ layers thinned by anodic oxidation to about 500 A, the quantum efficiencies in the short-wavelength portion of the spectrum are as high as the best reported for AlGaAs cells with high band-gap window layers.
The performances of sealed tube microchannel-plate position sensitive detectors having transmission CsI photocathodes or opaque CsI photocathodes are compared. These devices were developed for the FAUST Spacelab payload to accomplish imaging surveys in the band between 1300 A and 1800 A. It is demonstrated that photocathode quantum efficiencies in excess of 40 percent at 1216 A have been achieved with the transmission and the opaque CsI photocathodes. The effect of the photoelectron trajectory on the spatial resolution is assessed. Spatial resolution of less than 70 microns FWHM has been obtained and is maintained up to event rates of 50,000/sec. Background rates of 0.55 events sq cm per sec have been achieved and low distortion (less than 1 percent) imaging has been demonstrated.
This paper reviews ongoing research aimed at the attainment of highly efficient silicon solar cells. The importance of low-recombination highly-doped n(+) and p(+) regions and the manner in which such regions are fabricated are discussed. Theoretical light-trapping considerations are combined with experimental reflectance data to show that high quantum efficiency may be obtained from thin (100-micron) cells. The principal finding of this work is that thin solar cells with conversion efficiencies of over 20 percent may be fabricated if recombination at the front and back metal/silicon interfaces is reduced. Large-area cells (53 sq cm) with an efficiency of 18 percent are reported.
The active microcavity is adopted as an efficient source of non-classical light. By this device, excited by a mode-locked laser at a rate of 100 MHz, single-photons are generated over a single field mode with a nonclassical sub-poissonian distribution. The process of adiabatic recycling within a multi-step Franck-Condon molecular optical-pumping mechanism, characterized in our case by a quantum efficiency very close to one, implies a pump self-regularization process leading to a striking n-squeezing effect. By a replication of the basic single-atom excitation process a beam of quantum photon (Fock states) can be created. The new process represents a significant advance in the modern fields of basic quantum-mechanical investigation, quantum communication and quantum cryptography.
The direct conversion of solar radiation into an inverted population for extraction in an optical cavity holds promise as a relatively simple system design. Broad-band photoabsorption in the visible or near-UV range is required to excite large volumes of gas and to ensure good solar absorption efficiency. The state excited must be a metastable state which is not quenched by the parent gas. The emission bandwidth must be less than approximately 10 A. The system should show chemical reversibility and an insensitivity to increasing temperature. Other properties such as good quantum efficiency and kinetic efficiency are also implied. A search of electronic-vibrational transitions in diatomic molecules satisfying these conditions is now in progress. A photodissociation-pumped atomic iodine laser is now being tested under solar pumping conditions. Photodissociation studies for thallium spin-flip metastable formation will begin in the near future.
Solid-state triplet−triplet annihilation (TTA) upconversion has significant potential for application in light harvesting, optoelectronic devices, and bioimaging. However, the high optical powers required to achieve efficient upconversion have inhibited its adoption. In this work, we demonstrate plasmon-enhanced near-infrared (NIR)-to-blue TTA upconversion in a monolayer WSe2/organic heterojunction. Under far-field excitation, the device reaches a threshold of 19 mW/cm 2 and an external quantum efficiency (EQE) of 0.17% with an anti-Stokes shift of 1.1 eV. Plasmon excitation lowers the threshold to 0.9 mW/cm 2 and improves the EQE to 3.6%. We attribute the plasmon enhancement to surface plasmon polariton (SPP) near-field enhancement and dark-exciton absorption. Optimization of the WSe 2 transfer process is identified as a key factor for the device performance. This work demonstrates that plasmon excitation overcomes the low far-field absorption of 2D transition-metal dichalcogenide (TMD) sensitizers. Consequently, monolayer TMDs can achieve solid-state upconversion with a performance among the best reported.
The IceCube neutrino observatory in operation at the South Pole, Antarctica, comprises three distinct components: a large buried array for ultrahigh energy neutrino detection, a surface air shower array, and a new buried component called DeepCore. DeepCore was designed to lower the IceCube neutrino energy threshold by over an order of magnitude, to energies as low as about 10 GeV. DeepCore is situated primarily 2100 m below the surface of the icecap at the South Pole, at the bottom center of the existing IceCube array, and began taking pbysics data in May 2010. Its location takes advantage of the exceptionally clear ice at those depths and allows it to use the surrounding IceCube detector as a highly efficient active veto against the principal background of downward-going muons produced in cosmic-ray air showers. DeepCore has a module density roughly five times higher than that of the standard IceCube array, and uses photomultiplier tubes with a new photocathode featuring a quantum efficiency about 35% higher than standard IceCube PMTs. Taken together, these features of DeepCore will increase IceCube's sensitivity to neutrinos from WIMP dark matter annihilations, atmospheric neutrino oscillations, galactic supernova neutrinos, and point sources of neutrinos in the northern and southern skies. In this paper we describe the design and initial performance of DeepCore.
Infrared (IR) detectors characterized by a combination of (1) high-quantum-efficiency photoexcitation of inter-valence-subband transitions of charge carriers and (2) high-mobility conduction- band transport of the thus-excited charge carriers have been proposed in an effort to develop focal-plane arrays of such devices for infrared imaging. Like many prior quantum-well infrared photodetectors (QWIPs), the proposed devices would be made from semiconductor heterostructures. In order to obtain the combination of characteristics mentioned above, the proposed devices would be designed and fabricated in novel InAs/GaSb superlattice configurations that would exploit a phenomenon known in the semiconductor art as type-II broken-gap band offset.
It remains a challenge to obtain high-efficiency coupling of far-infrared through millimeter radiation to large-format detector arrays. The conventional approach of increasing detector coupling is to use reflective backshorts. However, this approach often results in excessive systematic errors resulting from reflections off the backshort edge. An alternate approach to both increasing quantum efficiency and reducing systematics associated with stray light is to place an antireflective coating near the front surface of the array. When incorporated with a resistive layer and placed behind the detector focal plane, the AR coating can serve to prevent optical ghosting by capturing radiation transmitted through the detector. By etching a hexagonal pattern in silicon, in which the sizes of the hexes are smaller than the wavelength of incident radiation, it is possible to fabricate a material that has a controllable dielectric constant, thereby allowing for simple tunable optical device fabrication. To this end, we have fabricated and tested tunable silicon "honeycomb" AR layers and AR/resistive layer devices. These devices were fabricated entirely out of silicon in order to eliminate problems associated with differential contraction upon detector cooling.
In this presentation, we will discuss the development of this large format broadband infrared FPA based on a GaAs/AlGaAs materials system and its performance in quantum efficiency, noise equivalent differential temperature, uniformity, and operability.
Efficient solar cells of indium tin oxide (ITO)/InP have been fabricated using dc magnetron deposition of the ITO into single-crystal InP substrates. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction. The results of studies of the annealing behavior of the cells and observations of interfacial changes using Raman spectroscopy and secondary ion mass spectroscopy, together with measurements of light and dark current/voltage and quantum efficiency characteristics, are used to model the behavior of the cells and explain their lack of sensitivity to fabrication conditions.
Past NASA missions to Mars, Jupiter, and the outer planets were powered by radioisotope thermal generators (RTG's). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaic (PV) and thermophotovoltaic (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV and TPV data base for planetary mission planners and cell designers, we have compiled low temperature low intensity (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate dI(sub SC)/dT, dV(sub OC)/dT, dFF/dT, and also as a function of intensity, an accurate prediction of cell performance under the AMO spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GainP/GaAs/Ge, InP, InGaAs/InP, InP/InGaAs/InP, and GainP. Temperatures range as low as -175 C and intensities range from 1 sun to .02 suns.
We investigate the limitations of quantum computers for solving nonlinear dynamical systems. In particular, we tighten the worst-case bounds of the quantum Carleman linearisation (QCL) algorithm answering one of their open questions. We provide a further significant limitation for any quantum algorithm that aims to output a quantum state that approximates the normalized solution vector. Given a natural choice of coordinates for a dynamical system with one or more positive Lyapunov exponents and solutions that grow sub-exponentially, we prove that any such algorithm has complexity scaling at least exponentially in the integration time. As such, an efficient quantum algorithm for simulating chaotic systems or regimes is likely not possible.