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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Coordinated airborne and satellite measurements of equatorial plasma depletions

A series of experiments conducted in December 1979 to investigate the structure of plasma depletions in the low latitude, nighttime ionosphere is discussed. Density biteouts of about one order of magnitude in the dominant ion, O(+), are mapped to lower altitudes along magnetic field lines for comparison with 6300-A and 7774-A O I airglow depletions. Owing to the different airglow production mechanisms (dissociative recombination of O2(+) for 6300 A and radiative recombination of O(+) for 7774 A), the 6300-A depletions reflect plasma depletions near the bottomside of the F layer, while those at 7774 A are located near the peak of the layer. The O(+) biteouts map directly into the 7774-A airglow depletions in the same hemisphere and also when traced into the opposite hemisphere, which suggests magnetic flux tube alignment over north-south distances of approximately 2220 km. The 6300-A (bottomside) depletions are found to be wider in longitude than the 7774-A (F-peak) depeletions near the equatorward edge of the Appleton anomaly.

Weber, E. J.↗
NASA NTRS1976

Theoretical optimization and parametric study of n-on-p Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A comprehensive theoretical model of the graded band-gap Al(x)Ga(1-x)As-GaAs solar cell is used to optimize the n-on-p cell. The model includes power losses due to surface, bulk, and junction minority-carrier recombination, series resistance, and photon reflection from an SiO antireflection coating of optimum thickness. The optimized cell has a junction depth/graded band-gap layer thickness of 1.0 micron, respective donor and acceptor concentrations of 4 x 10 to the 17th power and 2 x 10 to the 17th power per cu cm, and a surface AlAs mode fraction of x = 0.35. The optimized graded band-gap cell has an air-mass-zero efficiency of 17.7% (not corrected for a 13% front surface contact area) and is shown to be less sensitive than a similar n-on-p GaAs cell to material degradation in the form of decreased minority-carrier diffusion lengths and increased surface-recombination velocity

Hutchby, J. A.↗
NASA NTRS2004

Thermal Control Utilizing an Thermal Control Utilizing an Two-Phase Loop with High Heat Flux Source

The electric field applied in dielectric fluids causes an imbalance in the dissociation-recombination reaction generated free space charges. The generated charges are redistributed by the applied electric field resulting in the heterocharge layers in the Vicinity of the electrodes. Proper design of the electrodes generates net axial flow motion pumping the fluid. The electrohydrodynamic (EHD) conduction pump is a new device that pumps dielectric fluids utilizing heterocharge layers formed by imposition of electrostatic fields. This paper evaluates the experimental performance of a two-phase breadboard thermal control loop consisting of an EHD conduction pump, condenser, pre-heater, high heat flux evaporator (HE), transport lines, and reservoir (accumulator). The generated pressure head and the maximum applicable heat flux are experimentally determined at various applied voltages and sink temperatures. Recovery from dryout condition by increasing the applied voltage to the pump is also demonstrated.

Jeong, Seong-Il↗
NASA NTRS2017

The Atmospheric Response to High Nonthermal Electron Beam Fluxes in Solar Flares. I. Modeling the Brightest NUV Footpoints in the X1 Solar Flare of 2014 March 29

The 2014 March 29 X1 solar flare (SOL20140329T17:48) produced bright continuum emission in the far- and near-ultraviolet (NUV) and highly asymmetric chromospheric emission lines, providing long-sought constraints on the heating mechanisms of the lower atmosphere in solar flares. We analyze the continuum and emission line data from the Interface Region Imaging Spectrograph (IRIS) of the brightest flaring magnetic footpoints in this flare. We compare the NUV spectra of the brightest pixels to new radiative-hydrodynamic predictions calculated with the RADYN code using constraints on a nonthermal electron beam inferred from the collisional thick-target modeling of hard X-ray data from Reuven Ramaty High Energy Solar Spectroscopic Imager. We show that the atmospheric response to a high beam flux density satisfactorily achieves the observed continuum brightness in the NUV. The NUV continuum emission in this flare is consistent with hydrogen (Balmer) recombination radiation that originates from low optical depth in a dense chromospheric condensation and from the stationary beam-heated layers just below the condensation. A model producing two flaring regions (a condensation and stationary layers) in the lower atmosphere is also consistent with the asymmetric Fe II chromospheric emission line profiles observed in the impulsive phase.

Kowalski, Adam F.↗
NASA NTRS2018

Electrohydrodynamic (EHD) Refrigerant Pump

An electrohydrodynamic (EHD) pump increases refrigerant flow rate and the resulting pressure in a vapor compression based cooling system for permitting reduced compressor sizes and power demands. The EHD pump disposes electrodes in a liquid path of the refrigerant flow, and increases fluid flow and resulting pressure by an induced liquid flow between a pair of asymmetric electrodes. Voltage applied to these electrodes results in a conduction pumping mechanism associated with heterocharge layers in the vicinity of the electrodes based on disassociation of a neutral electrolyte species in the refrigerant fluid and recombination of the generated ions. The induced flow draws the liquid due to a net fluid flow toward one of the electrodes based on the asymmetry of the electrode pair. Electrodes are disposed on an inner surface of a refrigerant vessel, in communication with an annular liquid film that forms around the inner circumference in two-phase fluid systems.

Yagoobi, Jamal S.↗
DOE OSTI2022

Optically thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum

GaAs is often used as a multijunction subcell due to its high material quality on GaAs substrates, despite having a non-optimal bandgap. The bandgap can be beneficially reduced using many layers of thin, strain-balanced GaInAs in a superlattice or quantum well device, but achieving excellent carrier collection without increased recombination has proven challenging. Here, we develop and demonstrate high performance, optically thick GaInAs/GaAsP strain-balanced solar cells. Excellent material quality is achieved in thick superlattices by using growth conditions that limit progressive thickness and composition fluctuations. Bandgap-voltage offsets as low as 0.31V are shown in superlattice cells using thin, highly strained GaP barriers. Optically thick superlattice cells with over 2500 nm of total GaInAs in the depletion region are developed, enabling 3.8 mA/cm 2 of extra photocurrent beyond the GaAs band edge under the AM0 space spectrum. Optimized superlattice solar cells are incorporated into two-junction devices that achieve 29.2% efficiency under the AM0 space spectrum due to their improved bandgap combination and high subcell voltages.

14 SOLAR ENERGY↗
NASA NTRS1992

The role of engineered materials in superconducting tunnel junction X-ray detectors - Suppression of quasiparticle recombination losses via a phononic band gap

An engineered structure is proposed that can alleviate quasi-particle recombination losses via the existence of a phononic band gap that overlaps the 2-Delta energy of phonons produced during recombination of quasi-particles. Attention is given to a 1D Kronig-Penny model for phonons normally incident to the layers of a multilayered superconducting tunnel junction as an idealized example. A device with a high density of Bragg resonances is identified as desirable; both Nb/Si and NbN/SiN superlattices have been produced, with the latter having generally superior performance.

Rippert, Edward D.↗
NASA NTRS1993

Stability of the Halley cometosheath with resistivity and plasma motion

The MHD stability of the cometary inner sheath determined by the balance between the inward Lorentz body force and the outward ion-neutral drag force is investigated by numerically solving the wave equations which include resistivity, plasma motion and plasma pressure with the help of two-point boundary value method. The eigenvalues and the eigenfunctions are obtained numerically by treating the cometary inner sheath as a layer of finite thickness, bounded by the contact surface, that is, the diamagnetic cavity boundary. To gain insight into the problem, certain limiting cases of the wave equations are also discussed. The diamagnetic cavity boundary and the adjacent layer of about 100-km thickness of Comet Halley is found to be unstable. The effects of finite plasma pressure, dissociative recombination, mass loading due to photoionization, resistivity, and plasma motion are found to be stabilizing but are unable to quench the instability completely. Motion of the Halley ionopause has been confirmed by observations.

Srivastava, Krishna M.↗
DOE OSTI2026

Power conversion in SnS photocathodes made by electrochemical growth is limited by recombination at (002) buried facets

Herzenbergite α-SnS is a promising p-type semiconductor for photovoltaic and solar fuel applications, but current devices are plagued by substantial photovoltage losses. Here we use vibrating Kelvin probe surface photovoltage for the first time to study the recombination losses in microcrystalline SnS photoelectrodes. α-SnS films of varied crystal orientation, size, and shape are obtained by electrochemical growth from aqueous tin( II ) chloride and sodium thiosulfate solutions near room temperature. After application of a CdS passivation layer, the films function as photocathodes for the methylviologen reduction reaction. Photoelectrochemical and surface photovoltage measurements reveal that the performance of these devices is sensitively controlled by mainly the SnS crystal orientation and to a lesser extent by the grain size. For example, the highest charge recombination rates of 8.97 × 10 14 s −1 cm −2 and lowest photocurrent (0.73 mA cm −2 ) and lowest photovoltage (0.12 V) occur for SnS films containing 500 nm crystals with irregular shapes and SnS lattices tilted away from the (001) orientation. On the other hand, the best performance (1.62 mA cm −2 , 0.16 V, 3.32 × 10 12 s −1 cm −2 ) is seen for 1100 nm fully (001) oriented SnS nanoplates. Furthermore, these findings agree with improved charge carrier mobility in the 001 direction and they also show that charge recombination in SnS films occurs mainly at dangling Sn–S bonds at buried (002) facets. Such buried interfaces need to be suppressed for optimized solar energy conversion with SnS.

Najaf, Zainab [University of California, Davis, CA↗
DOE OSTI2023

Hybrid Heterostructures to Generate Long-Lived and Mobile Photocarriers in Graphene

We report the generation of long-lived and highly mobile photocarriers in hybrid van der Waals heterostructures that are formed by monolayer graphene, few-layer transition metal dichalcogenides, and the organic semiconductor F 8 ZnPc. Samples are fabricated by dry transfer of mechanically exfoliated MoS 2 or WS 2 few-layer flakes on a graphene film, followed by deposition of F 8 ZnPc. Transient absorption microscopy measurements are performed to study the photocarrier dynamics. In heterostructures of F 8 ZnPc/few-layer-MoS 2 /graphene, electrons excited in F 8 ZnPc can transfer to graphene and thus be separated from the holes that reside in F 8 ZnPc. By increasing the thickness of MoS 2 , these electrons acquire long recombination lifetimes of over 100 ps and a high mobility of 2800 cm 2 V–1 s –1 . Graphene doping with mobile holes is also demonstrated with WS 2 as the middle layers. Furthermore, these artificial heterostructures can improve the performance of graphene-based optoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Incorporating Electrochemical Halide Oxidation into Drift-Diffusion Models to Explain Performance Losses in Perovskite Solar Cells under Prolonged Reverse Bias

Partial shading of a solar module can induce a set of cells within the module to operate under reverse bias. Studies have shown that metal halide perovskite solar cells with a wide variety of compositions and contacts exhibit interesting behavior in reverse bias that includes both reversible performance loss and non-reversible degradation. In this paper, an advanced drift-diffusion approach incorporating an electrochemical term to explain the short-circuit, open circuit and fill factor losses that are experimentally measured after prolonged reverse bias is used. It is shown that holes can tunnel into the perovskite due to sharp band bending near the contact, accumulate within the bulk of the perovskite absorber, and trigger the oxidation of halides to form neutral halogens. The density of neutral halogens is much higher in reverse bias because there are hardly any electrons available to reduce the iodine. The resulting halogens act as bulk recombination centers. While the interstitial halogen density does decay when the cell is operated in forward bias, permanent degradation can occur if the iodine diffuses out of the perovskite layer. Finally, the ways in which changing parameters such as the mobile ion density or the series resistance at the contact can influence device performance and stability are discussed.

degradation↗
DOE OSTI2024

Inkjet-printed SnO x as an effective electron transport layer for planar perovskite solar cells and the effect of Cu doping

Inkjet printing is a more sustainable and scalable fabrication method than spin coating for producing perovskite solar cells (PSCs). Although spin-coated SnO 2 has been intensively studied as an effective electron transport layer (ETL) for PSCs, inkjet-printed SnO 2 ETLs have not been widely reported. Here, we fabricated inkjet-printed, solution-processed SnO x ETLs for planar PSCs. A champion efficiency of 17.55% was achieved for the cell using a low-temperature processed SnO x ETL. The low-temperature SnO x exhibited an amorphous structure and outperformed high-temperature crystalline SnO 2 . The improved performance was attributed to enhanced charge extraction and transport and suppressed charge recombination at ETL/perovskite interfaces, which originated from enhanced electrical and optical properties of SnO x , improved perovskite film quality, and well-matched energy level alignment between the SnO x ETL and the perovskite layer. Furthermore, SnO x was doped with Cu. Cu doping increased surface oxygen defects and upshifted energy levels of SnO x , leading to reduced device performance. A tunable hysteresis was observed for PSCs with Cu-doped SnO x ETLs, decreasing at first and turning into inverted hysteresis afterwards with increasing Cu doping level. This tunable hysteresis was related to the interplay between charge/ion accumulation and recombination at ETL/perovskite interfaces in the case of electron extraction barriers.

14 SOLAR ENERGY↗
DOE OSTI2023

Solution synthesis of two-dimensional zinc oxide (ZnO)/molybdenum disulfide (MoS 2 ) heterostructure through reactive templating for enhanced visible-light degradation of rhodamine B

Numerous inorganic materials have been identified as potential candidates for high-performance photocatalysts. However, their solar-to-energy conversion efficiencies still fail to meet commercial requirements. Here, the main hurdle is the rapid recombination of photoexcited electrons and holes in single-phase materials. A viable predicted approach to suppress charge recombination is coupling two materials to form a two-dimensional (2D) heterostructure that physically separates photoinduced electrons and holes in different layers. In this work, the heterostructure-based paradigm was tested and a scalable solution synthesis of epitaxial ZnO-MoS 2 heterostructure was developed. A 2D ZnO-MoS 2 heterostructure was synthesized under hydrothermal conditions by stabilizing intermediate Zn-hydroxide states on a functionalized MoS 2 surface. Detailed characterization showed the formation of multilayer heterostructure with MoS 2 flakes intercalated between large size ZnO plates. The performance of this heterostructure was evaluated using photocatalytic degradation of rhodamine B. A degradation efficiency of 70% was measured within 90 minutes of visible-light irradiation, almost doubling the efficiency of the corresponding single-phase materials or their physical mixtures.

2D heterostructure↗
DOE OSTI2021

Proton Radiation Tolerance of Wide and Narrow Band Gap Perovskite Solar Cells

Two different single junction mixed organic-inorganic halide perovskite solar cells (PSCs) were assessed for their tolerance to high energy proton radiation. Both the narrow band gap mixed tin-lead iodide and wide band gap lead iodide-bromide show remarkable tolerance for fluences up to 1x10 11 p/cm 2 . Both materials show a retention of open circuit voltage and decrease in dark current densities indicating minimal effect on SRH recombination that typically plagues traditional III-V based solar cells. Additionally, a control device that was processed without the perovskite absorber layer showed better diode characteristics and lower dark current densities after proton irradiation. The tolerance of these perovskite as a class of materials is promising for multijunction tandem flexible photovoltaic devices.

perovskite↗
NASA NTRS1975

A similarity solution of the Navier-Stokes equations with wall catalysis and slip for hypersonic, low Reynolds number flow over spheres

The slip conditions for a multicomponent mixture with diffusion, wall-catalyzed atom recombination and thermal radiation are derived. The more realistic multicomponent species slip conditions are shown to be necessary for accurate merged shock layer solutions on a sphere. These slip conditions are used in a first-order similarity solution of the Navier-Stokes equations with nonequilibrium chemistry for the merged shock layer. Results of this quick numerical solution are compared with a time dependent solution around the sphere and with measured arc jet results at low Reynolds numbers. The similarity solution, unlike the time dependent solution, shows smooth radial profiles of the pressure and smooth variations of velocity slip, skin friction, temperature slip and heat transfer around the body. The present first-order similarity solution is valid up to 25 deg from the stagnation point and takes less than 1% of the computer time to run a time dependent scheme. The smaller stand-off distance obtained from the similarity solution is supported by experimental data. The measured heat flux is closer to the similarity solution than the time dependent method at the stagnation point and shows the proper variation with circumferential angle up to at least 40 deg.

Hendricks, W. L.↗
NASA NTRS1987

Calculations of the displacement damage and short-circuit current degradation in proton irradiated (AlGa)As-GaAs solar cells

A theoretical model for computing the displacement damage defect density and the short-circuit current (I sub sc) degradation in proton-irradiated (AlGa)As-GaAs p-n junction solar cells is presented. Assumptions were made with justification that the radiation induced displacement defects form an effective recombination center which controls the electron and hole lifetimes in the junction space charge region and in the n-GaAs active layer of the irradiated GaAs p-n junction cells. The degradation of I sub sc in the (AlGa)As layer was found to be negligible compared to the total degradation. In order to determine the I sub sc degradation, the displacement defect density, path length, range, reduced energy after penetrating a distance x, and the average number of displacements formed by one proton scattering event were first calculated. The I sub sc degradation was calculated by using the electron capture cross section in the p-diffused layer and the hole capture cross section in the n-base layer as well as the wavelength dependent absorption coefficients. Excellent agreement was found between the researchers calculated values and the measured I sub sc in the proton irradiated GaAs solar cells for proton energies of 100 KeV to 10 MeV and fluences from 10 to the 10th power p/square cm to 10 to the 12th power p/square cm.

Yeh, C. S.↗
DOE OSTI2020

Influence of tungsten doping on nonradiative electron–hole recombination in monolayer MoSe 2 with Se vacancies

Two-dimensional transition metal dichalcogenides (TMDs) are receiving significant attention due to their excellent electronic and optoelectronic properties. The material quality is greatly affected by defects that are inevitably generated during material synthesis. Focusing on chalcogenide vacancies, which constitute the most common defect, we use the state-of-the-art simulation methodology developed in our group to demonstrate that W doping of MoSe 2 with Se vacancies reduces charge carrier losses by two mechanisms. First, W doping makes the formation of double Se vacancies unfavorable, while it is favorable in undoped MoSe 2 . Second, if a Se vacancy is present, the charge carrier lifetimes are extended in the W-doped MoSe 2 . Combining ab initio real-time time-dependent density functional theory with nonadiabatic molecular dynamics, the simulations show that the nonradiative carrier losses in the presence of Se vacancies proceed by sub-10 ps electron trapping and relaxation down the manifold of trap states, followed by a 100 ps recombination of trapped electrons with free holes. The electron–vibrational energy exchange is driven by both in-plane and out-of-plane vibrational motions of the MoSe 2 layer. Additionally, the atomistic studies advance our understanding of the influence of defects on charge carrier properties in TMDs and guide improvements of material quality and development of TMD applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1982

A one-dimensional model of the atmospheric electric field near the Venusian surface

A one-dimensional model is developed for the development of an electric field below the Venus cloud layer, assuming an absence of cloud-to-ground lightning. The ion-bearing medium is considered as a collision dominated, partially ionized gas. Ion production by cosmic rays is accompanied by a sink of recombining positive and negative ions. The net diffusion of ions to the surface was examined, and modeled as resulting from differences between the ion diffusivities and electrical activity within the clouds. Calculations were made of the conduction and diffusion currents profiles, positive and negative ion densities, and the net space charge. Higher positive ion diffusivity was found to enhance the surface positive charge, producing an electric field which depended on the boundary layer mixing. Charge separation in the clouds also produces an electric field. Assuming a fair weather conduction current similar to earth leads to an electric field of 5 kV/sq m at the surface, with continuity to a few kilometers altitude.

Tzur, I.↗