Zero-bias conductance peak in Dirac semimetal-superconductor devices
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Single crystals of ytterbium manganese diantimonide, YbMnSb 2 have been grown from a high-temperature reaction of the elements, employing molten Sb as self-flux. This phase crystallizes in the tetragonal centrosymmetric space group P4/nmm (No. 129) and adopts the ZrCuSiAs structure type. Here, the structure consists of Sb-based square nets and PbO-type layers formed by fused [MnSb 4/4 ] tetrahedra. YbMnSb 2 is stable under ambient atmosphere and incongruently melts at a temperature of ca. 1120 K. In the temperature range from 300 K to 450 K, the electrical resistivity of the as-grown single-crystalline material is as low as 3.2 mΩ cm, while its thermopower is as high as 180 μV/K. As such, YbMnSb 2 shows promise for thermoelectric applications in the mid-temperature region, with an estimated power factor of 0.85–0.95 mW/(m K 2 ).
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We report spin-torque ferromagnetic resonance studies of the efficiency of the damping-like (ξ DL ) spin–orbit torque exerted on an adjacent ferromagnet film by current flowing in epitaxial (001) and (110) IrO 2 thin films. IrO 2 possesses Dirac nodal lines (DNLs) in the band structure that are gapped by spin–orbit coupling, which could enable a very high spin Hall conductivity, σ SH . We find that the (001) films do exhibit exceptionally high ξ DL ranging from 0.45 at 293 K to 0.65 at 30 K, which sets the lower bounds of σ SH to be 1.9 × 10 5 and 3.75 × 10 5 Ω –1 m –1 , respectively, 10 times higher and of opposite sign than the theoretical prediction. Furthermore, ξ DL and σ SH are substantially reduced in anisotropically strained (110) films. Here, we suggest that this high sensitivity to anisotropic strain is because of changes in contributions to σ SH near the DNLs.
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