Search NASA⌕ Search

SEARCH · Search NASA

Results for “solid interface”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Reduction of Defects in Germanium-Silicon

It is well established that crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float- zone processing, detached-Bridgman growth is often cited as a promising tool to improve crystal quality, without the limitations of float zoning. Detached growth has been found to occur quite often during micro-g experiments and considerable improvements of crystal quality have been reported for those cases. However, no thorough understanding of the process or quantitative assessment of the quality improvements exists so far. This project will determine the means to reproducibly grow Ge-Si alloys in the detached mode. Specific objectives include: (1) measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; (2) determination of the mechanism of detached growth including the role of convection; (3) quantitative determination of the differences of defects and impurities among normal Bridgman, detached Bridgman, and Floating Zone (FZ) growth; (4) investigation of the influence of defined azimuthal or meridional flow due to rotating magnetic fields on the characteristics of detached growth; (5) control time-dependent Marangoni convection in the case of FZ-growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and (6) grow high quality GeSi-single crystals with Si-concentration up to 10 at% and diameters up to 20 mm.

Szofran, Frank R.↗
NASA NTRS2000

Particle Engulfment and Pushing Micro-Gravity Experiments and Mathematical Modeling

The phenomenon of interaction of particles with solid-liquid interfaces that results in particle engulfment or pushing (PEP) has been Studied since mid 1960's. While the original interest stemmed from geology applications (frost heaving in soil), it was recognized early that understanding particle behavior at solidifying interfaces mi ht yield 9 practical benefits in other fields. In metallurgical applications the issue is the location of particles with respect to grain boundaries at the end of solidification. Considerable amount of experimental and theoretical research was lately focused on applications to metal matrix composites produced by casting; or spray forming techniques. Another application of PEP is in the growing of Y1Ba2CU3O7-delta(123) superconductor crystals from an undercooled liquid. The oxide melt contains Y2Ba1CU1O5 (211) precipitates, which act as flux pinning sites. The paper presents results of PEP micro-gravity research performed by the authors on two shuttle missions using metallic and polymeric materials. In addition. a discussion on the theoretical aspects of the physics of PEP is offered. Analytical and numerical models for planar solidification interfaces developed by the authors are used to explain the experimental results. Shortcomings of steady-state models are emphasized. A numerical model that includes the effect of the solutal field and of natural convection is introduced. A discussion of phenomena associated with dendritic solidification based on experimental observations is also offered. A mechanism of engulfment is proposed.

Stefanescu, Doru M.↗
NASA NTRS2000

Model of ASTM Flammability Test in Microgravity: Iron Rods

There is extensive qualitative results from burning metallic materials in a NASA/ASTM flammability test system in normal gravity. However, this data was shown to be inconclusive for applications involving oxygen-enriched atmospheres under microgravity conditions by conducting tests using the 2.2-second Lewis Research Center (LeRC) Drop Tower. Data from neither type of test has been reduced to fundamental kinetic and dynamic systems parameters. This paper reports the initial model analysis for burning iron rods under microgravity conditions using data obtained at the LERC tower and modeling the burning system after ignition. Under the conditions of the test the burning mass regresses up the rod to be detached upon deceleration at the end of the drop. The model describes the burning system as a semi-batch, well-mixed reactor with product accumulation only. This model is consistent with the 2.0-second duration of the test. Transient temperature and pressure measurements are made on the chamber volume. The rod solid-liquid interface melting rate is obtained from film records. The model consists of a set of 17 non-linear, first-order differential equations which are solved using MATLAB. This analysis confirms that a first-order rate, in oxygen concentration, is consistent for the iron-oxygen kinetic reaction. An apparent activation energy of 246.8 kJ/mol is consistent for this model.

Steinberg, Theodore A↗
NASA NTRS2001

Study of Magnetic Damping Effect on Convection and Solidification Under G-Jitter Conditions

As shown in space flight experiments, g-jitter is a critical issue affecting solidification processing of materials in microgravity. This study aims to provide, through extensive numerical simulations and ground based experiments, an assessment of the use of magnetic fields in combination with microgravity to reduce the g-jitter induced convective flows in space processing systems. Analytical solutions and 2-D and 3-D numerical models for g-jitter driven flows in simple solidification systems with and without the presence of an applied magnetic field have been developed and extensive analyses were carried out. A physical model was also constructed and PIV measurements compared reasonably well with predictions from numerical models. Some key points may be summarized as follows: (1) the amplitude of the oscillating velocity decreases at a rate inversely proportional to the g-jitter frequency and with an increase in the applied magnetic field; (2) the induced flow oscillates at approximately the same frequency as the affecting g-jitter, but out of a phase angle; (3) the phase angle is a complicated function of geometry, applied magnetic field, temperature gradient and frequency; (4) g-jitter driven flows exhibit a complex fluid flow pattern evolving in time; (5) the damping effect is more effective for low frequency flows; and (6) the applied magnetic field helps to reduce the variation of solutal distribution along the solid-liquid interface. Work in progress includes developing numerical models for solidification phenomena with the presence of both g-jitter and magnetic fields and developing a ground-based physical model to verify numerical predictions.

Li, Ben Q.↗
NASA NTRS2001

Space- and Ground-Based Crystal Growth Using a Baffle (CGB)

The composition of semiconductor crystals produced in space by conventional melt-growth processes (directional solidification and zone melting) is affected by minute levels of residual micro-acceleration, which causes natural convection. The residual acceleration has random magnitude, direction and frequency. Therefore, the velocity field in the melt is apriori unpredictable. As a result, the composition of the crystals grown in space can not be predicted and reproduced. The method for directional solidification with a submerged heater or a baffle was developed under NASA sponsorship. The disk-shaped baffle acts as a partition, creating a small melt zone at the solid-liquid interface. As a result, in ground based experiment the level of buoyancy-driven convection at the interface is significantly reduced. In several experiments with Te-doped GaSb, nearly diffusion controlled segregation was achieved.

Ostrogorsky, A. G.↗
NASA NTRS2001

Float Zone Growth of Alloy Semiconductor Crystals: Influence of Solutocapillary Convection

Growth techniques with large free melt surfaces are affected by convective flows induced by gradients of the surface tension. In the case of dilute semiconductor alloys (in our case: germanium-silicon), the impact of solutocapillary convection (due to the concentration dependence of the surface tension) has to be taken into account in addition to the "normal" thermocapillary convection (due to the temperature dependence of the surface tension). Theoretical considerations, based on experimental temperature profiles, growth geometry, segregation coefficient, and measured values for the temperature and concentration coefficients of the surface tension, lead to the conclusion that for the germanium rich side of the Ge(1-x)Si(x) system, the contribution of solutocapillary convection is, at least in front of the solid-liquid interface, the dominant factor. It results in an additional flow roll with a flow direction opposite to the thermocapillary flow, similar to the ones reported for metal alloys or high Prandtl-number fluids.

Dold, P.↗
NASA NTRS2001

Measurement of Microscopic Growth Rates in Float-Zone Silicon Crystals

Time dependent convective flows during crystal growth of doped semiconductors lead to fluctuations of the composition, so called dopant striations. In general, it is difficult to decide which is the main mechanism for the generation of these striations, it might be either the fluctuation of the concentration field in the melt and the extent of the solute boundary layer ahead of the solid-liquid interface or a variation of the growth velocity. Direct access to the concentration field is rather complicated to achieve, especially considering the high process temperature and the chemical activity of liquid silicon. The contribution of growth rate fluctuations to the formation of compositional fluctuations can be determined by measuring microscopic growth rates. The classical method of current pulses requires electrical feed-throughs and good electrical contacts, both are critical issues for the growth of high purity silicon crystals. Using a radiation based heating system, the heating power can be modulated very fast and effectively. We added to the normal heater power a sinusoidal off-set in the frequency range of 1 to 10 Hz, generating a narrow spaced weak rippling in the grown crystals which are superposed to the dopant striations caused by natural and by thermocapillary convection. The pulling speed was varied between 1 and 4mm/min. The microscope images of etched crystals slices have been analyzed by peak-search algorithms (measuring the spacing between each artificially induced marker) and by FFT. Performing growth experiments under a time-dependent flow regime, fluctuations of the microscopic growth velocity of Delta(v)/v(sub average) up to 50% have been measured. Damping the time-dependent convection by the use of an axial, static magnetic field of 500mT, the microscopic growth rate became constant within the resolution limit of this method. The results will be discussed using analytical methods for the calculation of microscopic growth velocity and by comparing them with measurements of temperature fluctuations in the melt during growth experiments itself.

Dold, P.↗
NASA NTRS2001

Particle Engulfment and Pushing (PEP): Past Micro-Gravity Experiments and Future Experimental Plan on the International Space Station (ISS)

The interaction of an insoluble particle with a growing solid-liquid interface (SLI) has been a subject of investigation for the four decades. For a metallurgist or a material scientist understanding the fundamental physics of such an interaction is relevant for applications that include distribution of reinforcement particles in metal matrix composites, inclusion management in castings, and distribution of Y2Ba1Cu1O5 (211) precipitates (flux pinning sites) in Y1Ba2Cu3O7 (123) superconducting crystals. The same physics is also applicable to other areas including geological applications (frost heaving in soils) and preservation of biological cells. Experimentally this interaction can be quantified in terms of a critical growth velocity, Vcr, of the SLI below which particles are pushed ahead of the advancing interface, and above which the particles are engulfed. Past experimental evidence suggests that this Vcr is an inverse function of the particle radius, R. In order to isolate the fundamental physics that governs such a relationship it is necessary to minimize natural convection at the SLI that is inherent in ground based experiments. Hence for the purpose of producing benchmark data (Vcr vs. R) PEP is a natural candidate for micro-gravity experimentation. Accordingly, experiments with pure Al containing a dispersion of ZrO2 particles and an organic analogue, succinonitrile (SCN) containing polystyrene particles have been performed on the LMS and USMP-4 mission respectively. In this paper we will summarize the experimental data that was obtained during these two micro-gravity missions and show that the results differ compared to terrestrial experiments. We will also discuss the basic elements of our analytical and numerical model and present a comparison of the predictions of these models against micro-gravity experimental data. Finally. we will discuss our future experimental plan that includes the ISS glovebox and MSRRl.

Sen, Subhayu↗
NASA NTRS2001

Fluid Physics Under a Stochastic Acceleration Field

The research summarized in this report has involved a combined theoretical and computational study of fluid flow that results from the random acceleration environment present onboard space orbiters, also known as g-jitter. We have focused on a statistical description of the observed g-jitter, on the flows that such an acceleration field can induce in a number of experimental configurations of interest, and on extending previously developed methodology to boundary layer flows. Narrow band noise has been shown to describe many of the features of acceleration data collected during space missions. The scale of baroclinically induced flows when the driving acceleration is random is not given by the Rayleigh number. Spatially uniform g-jitter induces additional hydrodynamic forces among suspended particles in incompressible fluids. Stochastic modulation of the control parameter shifts the location of the onset of an oscillatory instability. Random vibration of solid boundaries leads to separation of boundary layers. Steady streaming ahead of a modulated solid-melt interface enhances solute transport, and modifies the stability boundaries of a planar front.

Vinals, Jorge↗
NASA NTRS2001

Effects of Surface Oxygen on the Performance of Carbon as an Anode in Lithium-Ion Batteries

Carbon materials with similar bulk structure but different surface oxygen were compared for their performance as anodes in lithium-ion battery. The bulk structure was such that the graphene planes were perpendicular to the surface. Three types of surfaces were examined: surface containing C=O type oxygen. surface containing -O-C type oxygen, and surface containing high concentration of active sites. The test involved cycles of lithium insertion into and release from the carbon materials, which was in the half cells of carbon/saturated LiI-50/50 (vol %) EC and DMC/lithium. During the first cycle of lithium insertion, the presence of adsorbed oxygen, -O-C type oxygen, active carbon sites, and C=O type oxygen resulted in the formation of solid-electrolyte interface (SEI) when the carbon's voltage relative to lithium metal was >1.35, 1 to 1.35, 0.5 to 1, and 0.67 to 0.7 V, respectively. An optimum -O-C type oxygen and a minimum C=O type oxygen was found to increase the reversible and decrease the irreversible capacity of carbon. Active sites on the carbon surface result in a large irreversible capacity and a second lithium insertion-release mechanism. However, this new mechanism has a short cycle life.

Hung, Ching-Cheh↗
NASA NTRS2001

Microgravity Science Glovebox Investigations SUBSA

Solidification Using a Baffle in Sealed Ampoules (SUBSA) is a Microgravity Science Glovebox Investigation manifested for the UF2 flight, on the U.S. Orbiter 111, to the International Space Station (ISS). SUBSA complements the "parent" flight investigation CG13 (Space-and Groundbased Crystal Growth Using a Baffle). During directional solidification, the disk-shaped baffle acts as a partition, creating a small melt zone at the solid-liquid interface. As a result, the level of buoyancy-driven convection at the interface is significantly reduced. In space, the baffle will reduce convection driven by residual micro acceleration. The baffle reduces the Rayleigh number (Ra) of the melt by a factor of 103. The combined effect of the baffle and microgravity will yield a reduction in Ra by a factor of 107 to 109 approaching effectively the acceleration conditions in "nanogravity". The results of ground based tests and numerical modeling will be presented. The furnace for directional solidification (flight hardware and the ground unit) was developed by Tec-Masters Inc. The flight ampoules were produced jointly at Rensselaer, Tec-Masters Inc. and Crystallod Inc.

Ostrogorsky, A.↗
NASA NTRS2002

Carbon Materials Embedded with Metal Nanoparticles as Anode in Lithium-Ion Batteries

Carbon materials containing metal nanoparticles that can form an alloy with lithium were tested for their capacity and cycle life to store and release lithium electrochemically. Metal nanoparticles may provide the additional lithium storage capacity as well as additional channels to conduct lithium in carbon. The cycle life of this carbon-metal composite can be long because the solid-electrolyte interface (SEI) on the carbon surface may protect both lithium and the metal particles in the carbon interior. In addition, the voids in the carbon interior may accommodate the nanoparticle's volume change, and such volume change may not cause much internal stress due to small sizes of the nanoparticles. This concept of improving carbon's performance to store and release lithium was demonstrated using experimental cells of C(Pd)/0.5M Lil-50/50 (vol.%) EC and DMC/Li, where C(Pd) was graphitized carbon fibers containing palladium nanoparticles, EC was ethylene carbonate, and DMC was dimethyl carbonate. However, such improvement was not observed if the Pd nanoparticles are replaced by aluminum, possibly because the aluminum nanoparticles were oxidized in air during storage, resulting in an inert oxide of aluminum. Further studies are needed to use this concept for practical applications.

Hung, Ching-cheh↗
NASA NTRS1997

Etch Profile Simulation Using Level Set Methods

Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

Hwang, Helen H.↗
NASA NTRS1998

Profile Evolution Simulation in Etching Systems Using Level Set Methods

Semiconductor device profiles are determined by the characteristics of both etching and deposition processes. In particular, a highly anisotropic etch is required to achieve vertical sidewalls. However, etching is comprised of both anisotropic and isotropic components, due to ion and neutral fluxes, respectively. In Ar/Cl2 plasmas, for example, neutral chlorine reacts with the Si surfaces to form silicon chlorides. These compounds are then removed by the impinging ion fluxes. Hence the directionality of the ions (and thus the ion angular distribution function, or IAD), as well as the relative fluxes of neutrals and ions determines the amount of undercutting. One method of modeling device profile evolution is to simulate the moving solid-gas interface between the semiconductor and the plasma as a string of nodes. The velocity of each node is calculated and then the nodes are advanced accordingly. Although this technique appears to be relatively straightforward, extensive looping schemes are required at the profile corners. An alternate method is to use level set theory, which involves embedding the location of the interface in a field variable. The normal speed is calculated at each mesh point, and the field variable is updated. The profile comers are more accurately modeled as the need for looping algorithms is eliminated. The model we have developed is a 2-D Level Set Profile Evolution Simulation (LSPES). The LSPES calculates etch rates of a substrate in low pressure plasmas due to the incident ion and neutral fluxes. For a Si substrate in an Ar/C12 gas mixture, for example, the predictions of the LSPES are identical to those from a string evolution model for high neutral fluxes and two different ion angular distributions.(2) In the figure shown, the relative neutral to ion flux in the bulk plasma is 100 to 1. For a moderately isotropic ion angular distribution function as shown in the cases in the left hand column, both the LSPES (top row) and rude's string method (bottom row) predict tapered profiles. The LSPES uses an AD with a FWHM = 13.5 degrees, and rude's model uses a ratio of sheath voltage to ion temperature of 50. The more anisotropic IADs produce profiles with more vertical sidewalls and a wider bottom surface, as shown in the right hand column. Here, the LSPES has an AD with a FWHM = 2 degrees, and rude's model uses a ratio of 500 of sheath voltage to ion temperature. The agreement between the LSPES and rude's model is excellent in both cases. We will present etching profiles generated by the LSPES, including calculations of the re-emitted fluxes of both neutrals and ions off of the profile walls. In addition, we will show the effect of geometric structures (overhangs, etc.) on the etching profiles. Other physical aspects, such as surface diffusion, will also be included in the model.

Hwang, Helen H.↗
NASA NTRS2002

Effect of Magnetic Fields on g-jitter Induced Convection and Solute Striation During Space Processing of Single Crystals

A 2-D finite element model is presented for the melt growth of single crystals in a microgravity environment with a superimposed DC magnetic field. The model is developed based on the deforming finite element methodology and is capable of predicting the phenomena of the steady and transient convective flows, heat transfer, solute distribution, and solid-liquid interface morphology associated with the melt growth of single crystals in microgravity with and without an applied magnetic field. Numerical simulations were carried out for a wide range of parameters including idealized microgravity conditions, the synthesized g-jitter and the real g-jitter data taken by on-board accelerometers during space flights. The results reveal that the time varying g-jitter disturbances, although small in magnitude, cause an appreciable convective flow in the liquid pool, which in turn produces detrimental effects during the space processing of single crystal growth. An applied magnetic field of appropriate strength, superimposed on microgravity, can be very effective in suppressing the deleterious effects resulting from the g-jitter disturbances.

deGroh, H. C.↗
NASA NTRS2003

Reduction of Defects in Germanium-Silicon

Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in the crystals. In addition to float-zone processing, detached Bridgman growth, although not a completely crucible-free method, is a promising tool to improve crystal quality. It does not suffer from the size limitations of float zoning and the impact of thermocapillary convection on heat and mass transport is expected to be negligible. Detached growth has been observed frequently during g experiments. Considerable improvements in crystalline quality have been reported for these cases. However, neither a thorough understanding of the process nor a quantitative assessment of the quality of these improvements exists. This project will determine the means to reproducibly grow GeSi alloys in a detached mode and seeks to compare processing-induced defects in Bridgman, detached-Bridgman, and floating-zone growth configurations in GeSi crystals (Si less than or equal to 10 at%) up to 20mm in diameter. Specific objectives include: measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; determination of the mechanism of detached growth including the role of convection; quantitative determination of the differences in defects and impurities for crystals grown using normal Bridgman, detached Bridgman, and floating zone (FZ) methods; investigation of the influence of a defined flow imposed by a rotating magnetic field on the characteristics of detached growth; control of time-dependent Marangoni convection in the case of FZ growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and growth of benchmark quality GeSi-single crystals.

Szofran, Frank R.↗
NASA NTRS2003

The Effect of the Traveling Magnetic Field (TMF) on the Buoyancy-Induced Convection in the Vertical Bridgman growth of Germanium

A traveling magnetic field (TMF) is created by means of applying out-of-phase currents to a number of coils. When applied to a conducting melt inside a cylindrical container, the TMF induces a Lorentz force that acts in the meridional directions (radial and axial), unlike the application of a rotating magnetic field (RMF), which creates a force in the azimuthal direction. In this work, we present a computational study of the TMF and its application to the Bridgman growth of the Ge. To quantify the effect of the TMF on the solid-melt interface, we use the maximum (magnitude-wise) tangential shear at the interface.

Yesilyurt, S.↗
NASA NTRS2003

A New Analytical Approach to Predict Spacing Selection in Lamellar and Rod Eutectic Systems

The Jackson and Hunt (JH) theory has been modified to relax the assumption of isothermal solid liquid interface used in their treatment. Based on the predictions of this modified theory, the traditional definitions of regular and irregular eutectics are revised. For regular eutectics, the new model identifies a range of spacing within the limits defined by the minimum undercooling of the a and beta phases. For the irregular Al-Si eutectic system, two different spacing selection mechanisms were identified: (1) for a particular growth rate, a nearly isothermal interface can be achieved at a unique minimum spacing lambda (sub t); (2) the average spacing (lambda (sub av) greater than lambda (sub t) is essentially dictated by the undercooling of the faceted phase. Based on the modified theoretical model, a semiempirical expression has been developed to account for the influence of the temperature gradient, which is dominant in the irregular Al-Si system. The behavior of the Fe-Fe3C eutectic is also discussed. The theoretical calculations have been found to be in good agreement with the published experimental measurements.

Catalina, Adrian V.↗