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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Lifetime study of the ColdADC for the Deep Underground Neutrino Experiment

ColdADC is a custom ASIC digitizer implemented in 65 nm CMOS technology using specialized techniques for long-term reliability in cryogenic environments. ColdADC was developed for use in the DUNE Far Detector complex, which will consist of four liquid argon time projection chambers. Each contains 17 kilotons liquid argon as the target material in order to measure neutrino oscillations. Approximately 40,000 ColdADC ASICs will be installed for DUNE in the first two large detectors and will be operated at cryogenic temperatures during the experiment without replacement. The lifetime of the ColdADC is a critical parameter affecting the data quality and physics sensitivity of the experiment. A measurement of the lifetime of the ColdADC was carried out, and the results shown in this paper assure orders of magnitude longer lifetime of the ColdADC than the planned operation time of the detectors.

Front-end electronics for detector readout↗
DOE OSTI2026

Low power on-chip data transmission for wafer-scale monolithic active pixel sensors

Here, this paper details the implementation of the digital pulse shaping subsystem within the Backbone Transmission Line Encoding (BTLE) driver, a low-power, long-distance on-chip data transmission solution designed in a 65 nm CMOS process. Digital pulse shaping is critical for minimizing inter-symbol interference (ISI) caused by bandwidth limitations of on-chip interconnects, especially in wafer-scale monolithic active pixel sensors (MAPS). A duobinary encoder coupled with a parallelized polyphase finite impulse response (FIR) filter is used for efficient shaping of the transmitted signal spectrum. This reconfigurable architecture achieves reliable 160 Mb/s data transfer over a 10 cm on-chip link, as validated by simulations demonstrating low power consumption (FoM 37.3 fJ/bit/mm of transmission line length) and effective ISI mitigation.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Smart pixel sensors: towards on-sensor filtering of pixel clusters with deep learning

Highly granular pixel detectors allow for increasingly precise measurements of charged particle tracks. Next-generation detectors require that pixel sizes will be further reduced, leading to unprecedented data rates exceeding those foreseen at the High- Luminosity Large Hadron Collider. Signal processing that handles data incoming at a rate of $\mathcal{O}$(40 MHz) and intelligently reduces the data within the pixelated region of the detector at rate will enhance physics performance at high luminosity and enable physics analyses that are not currently possible. Using the shape of charge clusters deposited in an array of small pixels, the physical properties of the traversing particle can be extracted with locally customized neural networks. In this first demonstration, we present a neural network that can be embedded into the on-sensor readout and filter out hits from low momentum tracks, reducing the detector's data volume by 57.1%–75.7%. The network is designed and simulated as a custom readout integrated circuit with 28 nm CMOS technology and is expected to operate at less than 300 μW with an area of less than 0.2 mm 2 . The temporal development of charge clusters is investigated to demonstrate possible future performance gains, and there is also a discussion of future algorithmic and technological improvements that could enhance efficiency, data reduction, and power per area.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

High-energy micrometre-scale pixel direct conversion X-ray detector

The objective of this work was to fabricate and characterize a new X-ray imaging detector with micrometre-scale pixel dimensions (7.8 µm) and high detection efficiency for hard X-ray energies above 20 keV. A key technology component consists of a monolithic hybrid detector built by direct deposition of an amorphous selenium film on a custom designed CMOS readout integrated circuit. Characterization was carried out at the synchrotron beamline 1-BM-B at the Advanced Photon Source of Argonne National Laboratory. The direct conversion detector demonstrated micrometre-scale spatial resolution with a 63 keV modulation transfer function of 10% at Nyquist frequency. In addition, spatial resolving power down to 8 µm was determined by imaging a transmission bar target at 21 keV. X-ray signal linearity, responsivity and lag were also characterized in the same energy range. Finally, phase contrast edge enhancement was observed in a phase object placed in the beam path. This amorphous selenium/CMOS detector technology can address gaps in commercially available X-ray detectors which limit their usefulness for existing synchrotron applications at energies greater than 50 keV; for example, phase contrast tomography and high-resolution imaging of nanoscale lattice distortions in bulk crystalline materials using Bragg coherent diffraction imaging. Here, the technology will also facilitate the creation of novel synchrotron imaging applications for X-ray energies at or above 20 keV.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Evaluation of an event-driven 3FI ASIC for spectroscopic X-ray detection with synchrotron radiation

The novel design and evaluation on the NSLS-II beamline of the 3FI application-specific integrated circuit (ASIC) bump-bonded to a simple, planar, 2D segmented silicon sensor are presented. The ASIC was developed for full-field fluorescence spectral X-ray imaging (3FI). It is a small-scale prototype that features a square array of 32 × 32 pixels, and the size of the pixels is 100 µm × 100 µm. The ASIC was implemented in a 65 nm CMOS integrated circuit fabrication process. Each pixel incorporates a charge-sensitive amplifier, a shaping filter, a discriminator, a peak detector and a sample-and-hold circuit, allowing detection of events and storage of signal amplitudes. The system operates in a frameless event-driven readout mode, outputting analog values for threshold-triggered events, allowing high-speed multi-element X-ray fluorescence data acquisition. The 3FI ASIC achieves per-channel spectrometric performance at a power consumption of only 200 µW per pixel, with nearly all dissipation confined to the analog front-end. An energy resolution is measured at the level of 308 eV full width at half-maximum (FWHM) at 8.04 keV (Cu Kα), and 138 eV FWHM at 3.69 keV (Ca Kα). This per-pixel capability makes the prototype suitable for in situ trace element microanalysis in biological and environmental studies. Moreover, the frameless architecture of the detector is designed to address limitations of conventional X-ray fluorescence microscopy, which typically requires mechanical scanning, by enabling continuous high-throughput data acquisition in future full-field implementations.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

An 802pW 93% Peak Efficiency Buck Converter with 5.5×10 6 Dynamic Range Featuring Fast DVFS and Asynchronous Load-Transient Control

Here this paper presents a buck converter with sub-nW quiescent power, high efficiency, and a wide dynamic range for ultra-low-power (ULP) IoT SoCs. To optimize the SoC power consumption, the buck converter supports fast dynamic voltage and frequency scaling (DVFS) and enables fast load-transient response (FLTR) through asynchronous control. In addition, the buck converter is fully self-contained with all features integrated on chip including a proposed adaptive deadtime controller. Fabricated in 65nm CMOS, measurement results show the buck converter has an 802pW quiescent power at 1.5V input voltage and a 93% peak efficiency. The measured dynamic range is from 0.5nW to 2.75mW, which is over 6 orders of magnitude. The measured voltage droop is 54mV for a 45nA-to-1mA load current step thanks to the asynchronous load-transient detector. The buck converter achieves the highest efficiency and widest dynamic range among all the state-of-the-art sub-nW switching voltage regulators, which makes it well suited for power management in ULP SoCs.

42 ENGINEERING↗
DOE OSTI2024

First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and its Scalability for High-Density 3D Ferroelectric Capacitor Memory

In this article, we perform a comprehensive experimental and modeling study into the scaling of vertical 2T-nC ferroelectric random-access memory (FeRAM) hybrid cell to demonstrate a high performance and high-density 3D capacitor memory. We demonstrate: i) first time successful integration of the vertical 2T-3C FeRAM cell by stacking the vertical metal-ferroelectricmetal (MFM) stack on top of Si CMOS transistors; ii) successful experimental operation of the memory cell, including the quasi-nondestructive read out (QNRO) of the polarization without write back after 106 read cycles; iii) the write bit line (WBL) heavily screens the coupling between neighboring strings, making it a minor concern; V ) aggressive stacking of the WBLs, i.e., number of MFMs in a string, could facilitate the self-boosting during write operation due to ferroelectric linear capacitance (CFE), which allows self-boosted inhibition for Vw/2 scheme and worsens the Vw/3 scheme as disturb increases to intolerable 2Vw/3; v) aggressive horizontal scaling significantly increases the read disturb to cells on neighboring planes due to capacitance between two WBLs (Cz).

42 ENGINEERING↗
DOE OSTI2023

Foundry-fabricated silicon source of broadband polarization entanglement

We present a CMOS-fabricated photonic integrated circuit tailored to the generation of ultrabroadband polarization-entangled photons. This fully on-chip source leverages a novel design combining polarization splitter-rotators and a bidirectionally pumped microring resonator to produce high-fidelity polarization Bell states over 115 frequency-bin pairs spaced 38.4 GHz apart.

Miloshevsky, Alex↗
DOE OSTI2020

An 85 nW IoT Node-Controlling SoC for MELs Power-Mode Management and Phantom Energy Reduction

This paper presents an ultra-low power (ULP) node-controlling system-on-chip (SoC) used for power-mode management and phantom energy reduction of miscellaneous electric loads (MELs). The SoC is powered from a single 2.5 V voltage supply enabled by the integrated power management unit (PMU) and can control up to 16 MELs due to the on-chip 16-channel correlator and the 32b RISC-V microprocessor. To further reduce the system power consumption, two clock domains have been adopted for the correlator and the processor separately. Fabricated in 65-nm CMOS, the measured minimum power consumption of the proposed SoC is only 85 nW at 0.45 V voltage supply and 1 kHz clock frequency. The measured maximum operating frequency can go up to 148 kHz with a 0.55 V supply. An application experiment successfully demonstrates that the SoC controls the power modes of MELs from wake-up to cut-off to save the average power and phantom energy.

power-mode management, phantom energy, phantom pow↗
DOE OSTI2022

A 194nW Energy-Performance-Aware loT SoC Employing a 5.2nW 92.6% Peak Efficiency Power Management Unit for System Performance Scaling, Fast DVFS and Energy Minimization

A self-powered IoT system-on-chip (SoC) reduces power to sub-μw and employs multiple power-management techniques to trade-off ultra-low power (ULP), higher performance, smaller energy harvester footprint, and longer operating lifetime. Minimum Energy Point Tracking (MEPT) [1]–[4] keeps an SoC operating at the minimum energy point (MEP) to enhance system lifetime. Previous sample-and-hold MEPT schemes need frequent voltage comparisons and a high-frequency clock that increases power [2]. Current-ratio-based MEPT relies on specialized CMOS technology for body-bias tuning [3]. A switched-capacitor-based MEPT can achieve energy minimization at a targeted performance [4], but it uses a 30MHz clock witμW power consumption and low power efficiency. For ULP IoT applications, SoCs need to have ultra-low quiescent power, high efficiency for energy delivery, performance scaling based on available energy, and energy minimization to increase system lifetime. In this work, we propose an ULP IoT SoC with a triple-mode power management unit (PMU) that integrates energy-performance scaling, event-driven fast DVFS, and MEPT features to improve the system energy efficiency, as shown in Fig. 13.8.1. This work achieves a minimum 194nW power consumption for the SoC and 5.2nW quiescent power for the PMU with a 92.6% peak efficiency and >10 4 dynamic range. The timing waveform in Fig. 13.8.1 (bottom), demonstrates the transition of the three modes including energy aware (EA), performance aware (PA), and MEPT based on event priority and input voltage level which reflects the energy availability. As such, the system energy consumption and performance could be well-balanced based on both the input and output conditions.

self-powered IoT system-on-chip (SoC)↗
DOE OSTI2023

A 0.2–2 GHz Time-Interleaved Multistage Switched-Capacitor Delay Element Achieving 2.55–448.6 ns Programmable Delay Range and 330 ns/mm 2 Area Efficiency

Simulation of radar returns, full-duplex systems, and signal repeaters require hundreds of ns of programmable broadband radio frequency (RF) delay in the signal path to simulate large distances in the case of radar returns, for signal cancellation in full-duplex, and for isolation from reflections in signal repeaters. However, programmable broadband RF delay has been limited to ones of ns due to challenges in miniaturization with low loss and low power consumption. In this work, we present a 0.2–2 GHz digitally programmable RF delay element based on a time-interleaved multistage switched-capacitor (TIMS-SC) approach. The proposed approach enables hundreds of ns of broadband RF delay by employing sample time expansion in multiple stages of switched-capacitor storage elements. Further, the delay element was implemented in a 45 nm SOI CMOS process and achieves a 2.55–448.6 ns programmable delay range with < 0.12% delay variation across 1.8 GHz of bandwidth at maximum delay, 2.42 ns programmable delay steps, and 330 ns/mm 2 area efficiency. Through the proposed approach, the device shows minimal delay change across a -40 °C to 85 °C temperature range and < 0.25 dB gain variation across delay settings. The device achieves 26 dB gain, 7.4 dB noise figure, and consumes 74 mW from a 1 V supply with an active area of 1.36 mm 2 .

42 ENGINEERING↗
DOE OSTI2021

Controllable Reset Behavior in Domain Wall–Magnetic Tunnel Junction Artificial Neurons for Task-Adaptable Computation

Neuromorphic computing with spintronic devices has been of interest due to the limitations of CMOS-driven von Neumann computing. Domain wall–magnetic tunnel junction (DW-MTJ) devices have been shown to be able to intrinsically capture biological neuron behavior. Edgy-relaxed behavior, where a frequently firing neuron experiences a lower action potential threshold, may provide additional artificial neuronal functionality when executing repeated tasks. In this letter, we demonstrate that this behavior can be implemented in DW-MTJ artificial neurons via three alternative mechanisms: shape anisotropy, magnetic field, and current-driven soft reset. Using micromagnetics and analytical device modeling to classify the Optdigits handwritten digit dataset, we show that edgy-relaxed behavior improves both classification accuracy and classification rate for ordered datasets while sacrificing little to no accuracy for a randomized dataset. This letter establishes methods by which artificial spintronic neurons can be flexibly adapted to datasets.

42 ENGINEERING↗
DOE OSTI2023

Will Stochastic Devices Play Nice With Others in Neuromorphic Hardware?: There’s More to a Probabilistic System Than Noisy Devices

Achieving brain-like efficiency in computing requires a co-design between the development of neural algorithms, brain-inspired circuit design, and careful consideration of how to use emerging devices. The recognition that leveraging device-level noise as a source of controlled stochasticity represents an exciting prospect of achieving brain-like capabilities in probabilistic neural algorithms, but the reality of integrating stochastic devices with deterministic devices in an already-challenging neuromorphic circuit design process is formidable. Here, we explore how the brain combines different signaling modalities into its neural circuits as well as consider the implications of more tightly integrated stochastic, analog, and digital circuits. Further, by acknowledging that a fully CMOS implementation is the appropriate baseline, we conclude that if mixing modalities is going to be successful for neuromorphic computing, it will be critical that device choices consider strengths and limitations at the overall circuit level.

42 ENGINEERING↗
DOE OSTI2026

Temperature-Dependent Transport Characteristics of 2D MoS2 Channel FETs Grown Using Salt-Based Precursors

D Transition Metal Dichalcogenides (TMDs), particularly MoS2, are promising candidates for sub-10 nm Gate All Around (GAA) CMOS FETs. Salt-assisted Chemical Vapor Deposition (CVD) enable lateral MoS2 growth at atmospheric pressure and low temperatures. This work analyzes salt-based precursor-driven CVD-grown MoS2 FETs at various temperatures. MoS2 was grown using Ammonium Molybdate salt, sulfurized at 750∘C, and transferred onto p−Si3/SiO2 substrates. At room temperature, threshold voltage (VT) ranged from -35 V to -25 V, with a peak drain current of 1.2μA/μm. As temperature increased above 325K, VT shifted exponentially, and carrier mobility dropped significantly. At 400 K, the gate lost channel control, though gate leakage current remained low. These results are compared with non-salt-based MoS2 growth to assess salt precursor effects.Notice: This manuscript has been authored by UT-Battelle, LLC, under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (https://www.energy.gov/doe-public-access-plan).

Jones, Andrew [ORNL] (ORCID:0009000233849687)↗
DOE OSTI2023

Experimental results from the characterization of a 32-channels mixed-signal processor for the GAPS experiment

This work describes the experimental results obtained from the characterization of a 32-channels readout ASIC that is the core of a module composed by 4 Lithium-drifted Silicon, Si(Li), detectors. The module is the building block of a tracker in an upcoming balloon experiment. The activity is carried out within the General AntiParticle Spectrometer (GAPS) international collaboration, whose objective is the indirect detection of dark matter through the detection of antiparticles present in cosmic rays at low energies. The balloon flight is foreseen in 2024 from the McMurdo station in Antarctica. The ASIC is designed in a 180 nm CMOS technology and has 32 low-noise analog readout channels featuring a dynamic compression of the signal, an 11-bit SAR ADC, and a digital back-end section responsible for channel setting and for sending digital information to the data acquisition system of the tracker. This work has a twofold goal: it intends on the one hand to verify the performance of the circuit, on the other to select at least 300 good samples to be used for the assembly of the GAPS Si(Li) tracker.

Riceputi, Elisa↗
DOE OSTI2025

A Radiation-Hard 8-Channel 15-Bit 40-MSPS ADC for the ATLAS Liquid Argon Calorimeter Readout

The custom design of a radiation-hardened, 8-channel, 40-MSPS, 15-bit resolution, 14.2-bit dynamic range, 11.4-ENOB ADC data acquisition ASIC fabricated in a commercial 65-nm triple-well CMOS technology is presented. The ADC is developed for and integrates seamlessly into the readout system for the ATLAS liquid argon (LAr) calorimeter in the high-luminosity large hadron collider (HLLHC) upgrade at CERN, which will require a total of 364 936 ADC channels. A three-stage MDAC+SAR pipelined ADC architecture was designed to meet the physics requirements and scientific goals of the ATLAS experiment. The ADC is a fully self-contained data acquisition system that includes foreground calibration, digital data processing, digital control, and supporting circuitry. The measured performance shows the ADC achieves a competitive dynamic range and SNDR, and it meets or exceeds the ATLAS analog requirements. Radiation tolerance and scalability design considerations were implemented at the device-, circuit-, and system-level. Radiation-hardening-by-design techniques used include redundancy for digital circuits, the use of MiM capacitors, and a hybrid RC-DAC for the ADC core. The ADC ASIC was demonstrated to be robust against the effects of the intense radiation expected in the HL-LHC experimental environment.

DAQ↗
DOE OSTI2022

FALCON readout channel for X-ray ptychography applications

This work reports the current state of the development of a pixelated readout for nanometer resolution X-ray ptychography applications. A very dense, low-noise and low-power pixel developed in a commercial 65nm CMOS technology is envisioned for such applications, targeting a pixel area of 150 μm × 150 μm, an overall noise of 200e- rms and a power consumption of 150μW per pixel. In the paper, an introduction to the application and an overview of the experimental setup are given, the designed frontend channel is reported and revised in its components and simulation results of the schematic-level design are shown and discussed.

Lazzaroni, Paolo↗
DOE OSTI2023

Superconducting Hyperdimensional Associative Memory Circuit for Scalable Machine Learning

Here we propose a generalized architecture for the first rapid-single-flux-quantum (RSFQ) associative memory circuit. The circuit employs hyperdimensional computing (HDC), a machine learning (ML) paradigm utilizing vectors with dimensionality in the thousands to represent information. HDC designs have small memory footprints, simple computations, and simple training algorithms compared to superconducting neural network accelerators (SNNAs), making them a better option for scalable SFQ machine learning (ML) solutions. The proposed superconducting HDC (SHDC) circuit uses entirely on-chip RSFQ memory which is tightly integrated with logic, operates at 33.3 GHz, is applicable to general ML tasks, and is manufacturable at practically useful scales given current SFQ fabrication limits. Tailored to a language recognition task, SHDC consists of ~ 2-20 M Josephson junctions (JJs) and consumes up to three times less power than an analogous CMOS HDC circuit while achieving 78-84% higher throughput. SHDC is capable of outperforming the state of the art RSFQ SNNA, SuperNPU, by 48-99% for all benchmark NN architectures tested while occupying up to 90% less area and consuming up to nine times less power. To the best of the authors' knowledge, SHDC is currently the only superconducting ML approach feasible at practically useful scales for real-world ML tasks and capable of online learning.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗