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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process. Silicon sheet growth development for the large area sheet task of the low-cost solar array project

A new calculation of the effects of thermal stresses during growth on silicon ribbon quality is reported. Thermal stress distributions are computed for ribbon growth under a variety of temperature profiles. A growth rate of 55 cu cm/min with a single ribbon was achieved. The growth of RTR ribbon with a fairly uniform parallel dendritic structure was demonstrated. Results with two approaches were obtained for reducing the Mo impurity level in polycrystalline feedstock. Coating the Mo substrate with Si3N4 does not effect thermal shear separation of the polyribbon; this process shows promise of improving cell efficiency and also increasing the useful life of the molybdenum substrate. A number of solar cells were fabricated on RTR silicon grown from CVD feedstock.

Baghdadi, A.↗
NASA NTRS1979

Some properties of an advanced boron fiber

An advanced coreless boron fiber exhibits tensile strengths which are more than twice that of the normal CVD B/W fibers. The coreless fiber is made by the chemical removal of the tungsten boride core exposed by splitting the as-grown fiber. The easily splittable fiber is made by the chemical vapor deposition of boron on a larger than usual tungsten substrate. It is expected that the ease of splitting is related to residual stresses in these fibers. Measurements of the axial residual stresses in both the normal and the splittable fibers are presented and the results compared. Differences in these stresses are discussed in connection with the ease of splitting in the splittable fibers.

Behrendt, D. R.↗
NASA NTRS1978

The Array Automated Assembly Task for the Low Cost Solar Array Project, Phase 2

During the program a process sequence was proposed and tested for the fabrication of dendritic welb silicon into solar modules. This sequence was analyzed as to yield and cost and these data suggest that the price goals of 1986 are attainable. Specifically, it was shown that a low cost POCL3 is a suitable replacement for the semiconductor grade, and that a suitable CVD oxide can be deposited from a silane/air mixture using a Silox reactor. A dip coating method was developed for depositing an antireflection coating from a metalorganic precursor. Application of photoresist to define contact grids was made cost effective through use of a dip coating technique. Electroplating of both Ag and Cu was shown feasible and cost effective for producing the conductive metal grids on the solar cells. Laser scribing was used to separate the cells from the dendrites without degradation. Ultrasonic welding methods were shown to be feasible for interconnecting the cells. A study of suitable low cost materials for encapsulation suggest that soda lime glass and phenolic filled board are preferred.

Campbell, R. B.↗
NASA NTRS1979

Radiation effects in GaAs AMOS solar cells

The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc.

Shin, B. K.↗
NASA NTRS1979

Some properties of an advanced boron fiber

An advanced coreless boron fiber has exhibited tensile strengths which are more than twice that of the normal CVD B/W fibers. The coreless fiber is made by the chemical removal of the tungsten boride core exposed by splitting the as-grown fiber. The easily splittable fiber is made by the chemical vapor deposition of boron on a larger than usual tungsten substrate. It is expected that the ease of splitting is related to residual stresses in these fibers. Measurements of the axial residual stresses in both the normal and the splittable fibers are presented and the results compared. Differences in these stresses are discussed in connection with the ease of splitting in the splittable fibers.

Behrendt, D. R.↗
NASA NTRS1979

Experimental studies of the formation/deposition of sodium sulfate in/from combustion gases

An optical polarization (ellipsometric) technique was developed for measuring rapidly growing and evaporating transparent liquid condensate films (e.g., boric oxide) on solid surfaces exposed to combustion product gases. Results for the B2O3 deposition rate from BCl3-seeded propane/air flames are shown to agree well with the results of earlier interference measurements, and also with theoretical CVD predictions. Evaporation rates (from platinum ribbons into seeded propane air flames) are estimated using the polarization technique. It appears that, compared with the interference method, the polarization technique places less stringent requirements on surface quality, which may justify the added optical components needed for such measurements. It is concluded that the complementary optical methods of polarization (ellipsometry) and interference hold considerable promise for application to the rapid measurement of condensation and evaporation rates in high temperature (e.g., combustion product) environments.

Rosner, D. E.↗
NASA NTRS1978

Induced junction solar cell and method of fabrication

An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.

Maserjian, J.↗
NASA NTRS1978

Characterization and properties of controlled nucleation thermochemical deposited /CNTD/ silicon carbide

Results are presented for an investigation designed to characterize the microstructure of controlled nucleation thermomechanical deposition (CNTD) produced SiC material with respect to grain structure, stoichiometry, phase analysis, etc., and to evaluate the room-temperature and high-temperature fracture and oxidation behavior. By using the CNTD process, ultrafine-grained SiC is deposited on tungsten wires as substrates, with superior surface smoothness and without the macrocolumnar growth commonly observed in conventional CVD materials. The results suggest that the high-purity, fully dense, and stable grain size SiC material produced by CNTD shows potential for high-temperature structural applications, provided that pertinent problems are resolved.

Dutta, S.↗
NASA NTRS1979

Potential for improved silicon ribbon growth through thermal environment control

The Ribbon-to-Ribbon (RTR) process for growth of silicon ribbon is described. This process involves the fabrication of a microcrystalline ribbon of silicon and subsequent grain size enhancement through a laser recrystallization process. The microribbon is obtained from a Thermal Expansion Shear Separation (TESS) process which allows a CVD layer of silicon to be separated from a temporary molybdenum substrate. Efforts to achieve increased solar cell efficiencies and higher area production rates have been problematical. Furnaces, which are necessary for thermal stress control, have been shown to contribute contamination to substrates resulting in degraded efficiencies. Recent results with a new furnace design indicate efficiencies in excess of 9% will be routine. Limitations to area throughput arise due to fundamental linear velocity limitations and width limitations necessary to prevent the occurrence of thermal buckling. Calculations are reported which show the influence of thermal profile on buckling tendencies, and a proposed electron beam technique is considered which promises high throughput with minimal buckling.

Gurtler, R. W.↗
NASA NTRS1982

Ultra-Thin-Film GaAs Solar Cells

Process based on organo-metallic chemical vapor deposition (OM/CVD) of trimethyl gallium with arsine forms economical ultrathin GaAs epitaxial films. Process has higher potential for low manufacturing cost and large-scale production compared with more-conventional halide CVD and liquid-phase epitaxy processes. By reducing thickness of GaAs and substituting low-cost substrate for single-crystal GaAs wafer, process would make GaAs solar cells commercially more attractive.

Wang, K. L.↗
NASA NTRS1980

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

Wang, K. L.↗
NASA NTRS1980

Cascade Solar Cell Workshop report

Issues related to the feasibility, research and development, and demonstration of a 30% AMO cascade solar cell discussed include the material selection, growth and fabrication techniques, and device development strategy for a monolithic (two terminal) cascade cell, a hybrid (four terminal) cascade cell, and a spectral splitting device (three cells). Workshop recommendations include: (1) initiate a long range research program to develop a three junction, monolithic, cascade cell using either AlGaAsSb-GaAsSb or AlGaInAs-GaInAs material system; (2) emphasize OM-CVD epitaxial growth technique, perhaps combined with other technologies in the near term to obtain tunnel junctions; (3) develop a two junction device first; (4) initiate a cascade solar cell modeling program to study and compare performance of two and four terminal cascade devices exposed to electron and proton irradiation; and (5) encourage and be open to new ideas for developing four terminal, hybrid, cascade cells exploiting novel component cell interconnect technologies.

Hutchby, J. A.↗
NASA NTRS1980

Investigation of diffusion barrier materials on silicon carbide filaments

The formation of diffusion barrier materials on SiC filaments is discussed. The filaments possess a carbon-rich surface layer and, consequently, are difficult to wet by molten Al and tend to react with the molten metal, degrading filament strength. Characterization of the filament with various CVD barrier materials is reported.

Wawner, F. E.↗
NASA NTRS1981

AlGaAs/GaAs transverse junction stripe lasers with distributed feedback

Transverse junction stripe (TJS) lasers with periodic feedback were fabricated in two geometries. An interferometric and wet chemical etching technique was used to create a feedback grating across the entire pumping region for the distributed feedback (DFB) TJS laser and to create the separate distributed Bragg reflectors/DBR) for the TJS/DBR laser. The TJS/DFB laser was a double heterostructure device grown by liquid phase epitaxy (LPE) and had a third order grating etched in the top ALO.2GaO.8As layer. The grating was buried by growing an ALO.35GaO.65As layer on the grating by metal organic chemical vapor deposition (MO-CVD). The TJS/DBR laser was also fabricated in an LPE double heterostructure. The top AlGaAs layer was thinned to 0.1 micron over more than half of the laser so that the grating would be close to the GaAs active layer and optical field. Single mode operation in both configurations was obtained. The thermal shift of the laser wavelength in both cases was less than 1 Angstrom/deg K, compared to the 3 Angstrom/deg K shift of the spontaneous emission peak.

Hafich, M. J.↗
NASA NTRS1981

Development of a polysilicon process based on chemical vapor deposition (phase 1)

A dichlorosilane-based reductive chemical vapor deposition (CVD) process demonstrated is capable of producing, at low cost, high quality polycrystalline silicon. Testing of decomposition reactor heat shields to insure that the shield provides adequate personnel protection assuming a worst case explosion was completed. Minor modifications to a production reactor heat shield provided adequate heat shield integrity. Construction of the redesigned PDU (Process Development Unit) to accommodate all safety related information proceeded on schedule. Structural steel work was completed as is the piping and instrumentation design work. Major pieces of process equipment were received and positioned in the support structure and all transfer piping and conduits to the PDU were installed. Construction was completed on a feed system for supplying DCS to an intermediate sized reactor. The feed system was successfully interfaced with a reactor equipped with a modified heat shield. Reactor checkout was completed.

Mccormick, J.↗
NASA NTRS1981

GaAs shallow-homojunction solar cells

The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

Fan, J. C. C.↗
NASA NTRS1981

Optimization of large area solar cells for low cost space application

The development of large-area solar cell manufacturing techniques for production of up to 10 kW/month of cells for use on the Shuttle Power Extension Package is detailed. Design goals for the cells were 14% efficiency at 135.3 mW/sq cm AM0 illumination for a 10 ohm-cm BSF/reflector cell, or 12.8% for a 2 ohm-cm BSR cell. Use of terrestrial cell technology to produce CVD SiO2 dielectric insulators for 3-in. ingot cells yielded satisfactory contact integrity. Fused silica coverings with thicknesses of 0.004 in. have allowed exploration of conventional and wraparound cell configurations due to inherent flexibilities of the frosted covers. One production run can now handle 108 3-in. wafers for the wraparound form or 216 in one-sided contact evaporations, with both processes taking 70 mins. Current contact grid designs for space use production permits average efficiencies of 12.8%.

Matthei, K. W.↗
NASA NTRS1981

Overview - Flat-plate technology

Progress and continuing plans for the joint NASA/DoE program at the JPL to develop the technologies and industrial processes necessary for mass production of low-cost solar arrays (LSA) which produce electricity from solar cells at a cost of less than $0.70/W are reviewed. Attention is given to plans for a demonstration Si refinement plant capable of yielding 1000 MT/yr, and to a CVD process with chlorosilane, which will yield material at a cost of $21/kg. Ingot and shaped-sheet technologies, using either Czochralski growth and film fed growth methods have yielded AM1 15% efficient cells in an automated process. Encapsulation procedures have been lowered to $14/sq m, and robotics have permitted assembled cell production at a rate of 10 sec/cell. Standards are being defined for module safety features. It is noted that construction of a pilot Si purification plant is essential to achieving the 1986 $0.70/W cost goals.

Callaghan, W. T.↗