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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Creep substructure formation in sodium chloride single crystals in the power law and exponential creep regimes

Creep tests conducted on NaCl single crystals in the temperature range from 373 to 1023 K show that true steady state creep is obtained only above 873 K when the ratio of the applied stress to the shear modulus is less than or equal to 0.0001. Under other stress and temperature conditions, corresponding to both power law and exponential creep, the creep rate decreases monotonically with increasing strain. The transition from power law to exponential creep is shown to be associated with increases in the dislocation density, the cell boundary width, and the aspect ratio of the subgrains along the primary slip planes. The relation between dislocation structure and creep behavior is also assessed.

Raj, S. V.↗
NASA NTRS1990

The effect of frictional stress on the calculation of critical thickness in epitaxy

A model is developed for lattice-mismatched epitaxial layers, which makes it possible to calculate both the equilibrium critical thickness as well as the kinetic rate of misfit accommodations. The technique for calculating the equilibrium critical thickness is similar to that of Matthews (1966) in that it uses the force balance approach and the Volterra description of the dislocation line. For the kinetic component of misfit accommodation, the model uses a dynamic frictional force. A simple criterion is proposed for determining whether the generation of misfit dislocations will be controlled by the equilibrium or the kinetic factors.

Fox, Bradley A.↗
NASA NTRS1990

InAs/Ga(1-x)In(x)Sb superlattices for infrared detector applications

The successful growth of InAs/Ga(1-x)In(x)Sb superlattices and their optical and structural characterization is discussed. Samples were grown by molecular beam epitaxy at fairly low substrate temperatures (less than 400 C). Structural quality was assessed by reflection high energy electron difrraction, transmission electron microscopy, and x ray diffraction. Excellent structures were achieved for growth on thick, strain relaxed GaSb buffer layers on GaAs substrates, despite a residual threading dislocation density of 10(exp 9)cm(exp -2) originating at the GaSb/GaAs interface. Despite a lattice mismatch of 1.7 percent, InAs/Ga(0.75)In(0.25)Sb superlattices are observed to be free of misfit dislocations at the thicknesses examined here, owing to the close lattice match between the superlattice and GaSb, which evenly distributes compressive and tensile stresses between the InAs and Ga(0.75)In(0.25)Sb layers. Photoluminescence and photoconductivity measurements indicate that the energy gaps of the strain-layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, and are in agreement with the theoretical predictions of Smith and Mailhiot. Energy gaps of 80 to 250 meV (15 to 5 microns) have been measured for InAs/Ga(0.75)In(0.25)Sb superlattices with 45 to 25 A/25 A layer thickness. Results demonstrate that far-infrared cutoff wavelengths are compatible with the thin superlattice layers required for strong optical absorption in type-II superlattices.

Miles, Richard H.↗
NASA NTRS1990

Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

Metallorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimental results were simulated by using a PC-1D computer model. The effect of emitter parameter variation on the performance of n(+)/p/p(+) heteroepitaxial InP/GaAs solar cell was presented. The thinner and lighter doped emitters were observed to offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency with respect to dislocation density was studied. Heteroepitaxial cells with efficiencies similar to present day homojunction InP efficiencies (greater than 16 percent AMO) were shown to be attainable if a dislocation density lower than 10(exp 6)/sq cm could be achieved. A realistic optimized design study yielded InP solar cells of over 22 percent AMO efficiency at 25 C.

Jain, Raj K.↗
NASA NTRS1990

The mechanisms of dispersion strengthening and fracture in Al-based XD(tm) alloys, part 1

The influence of reinforcement size, volume fraction, and matrix deformation behavior on room and elevated temperature strength; the fracture toughness; and the fatigue crack growth rate of metal matrix composites of Al-4(pct)Cu-1.5(pct)Mg with TiB2 were examined. The influence of reinforcement volume fraction was also examined for pure aluminum with TiB2. Higher TiB2 volume fractions increased the tensile yield strength at both room and elevated temperatures, and reduced the elongation to fracture. Tensile tests also indicate that small particles provided a greater increase in strength for a given volume fraction than larger particles, whereas elongation to fracture appeared to be insensitive to reinforcement size. Interparticle spacing appears to be the factor that controls the strength of these alloys, with the exact nature of the dependence relying on the nature of dislocation slip in the matrix (planar vs. diffuse). The isothermal aging response of the precipitation strengthened Al-4(pct)Cu-1.5(pct)Mg alloys was not accelerated by the presence of TiB2. Cold work prior to artificial aging created additional geometrically necessary dislocations which serve as heterogeneous nucleation sites leading to accelerated aging, a finer precipitate size, and an increase in the strength of the alloy.

Aikin, R. M., Jr.↗
NASA NTRS1991

High-efficiency heteroepitaxial InP solar cells

High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bulk substrates are being developed as a means of eliminating the problems associated with using single-crystal InP substrates. A novel device structure employing a compositionally graded Ga(x)In(1-x)As layer between the bulk substrate and the InP cell layers is used to reduce the dislocation density and improve the minority carrier properties in the InP. The structures are grown in a continuous sequence of steps using computer-controlled atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE). Dislocation densities as low as 3 x 10(exp 7) sq cm and minority carrier lifetimes as high as 3.3 ns are achieved in the InP layers with this method using both GaAs or Si substrates. Structures prepared in this fashion are also completely free of microcracks. These results represent a substantial improvement in InP layer quality when compared to heteroepitaxial InP prepared using conventional techniques such as thermally cycled growth and post-growth annealing. The present work is is concerned with the fabrication and characterization of high-efficiency, thin-film InP solar cells. Both one-sun and concentrator cells were prepared for device structures grown on GaAs substrates. One-cell cells have efficiencies as high as 13.7 percent at 25 C. However, results for the concentrator cells are emphasized. The concentrator cell performance is characterized as a function of the air mass zero (AM0) solar concentration ratio and operating temperature. From these data, the temperature coefficients of the cell performance parameters are derived as a function of the concentration ratio. Under concentration, the cells exhibit a dramatic increase in efficiency and an improved temperature coefficient of efficiency. At 25 C, a peak conversion efficiency of 18.9 percent is reported. At 80 C, the peak AM0 efficiency is 15.7 percent at 75.6 suns. These are the highest efficiencies yet reported for InP heteroepitaxial cells. Approaches for further improving the cell performance are discussed.

Wanlass, M. W.↗
NASA NTRS1991

Fracture of single crystals of the nickel-base superalloy PWA 1480E in helium at 22 C

The fracture behavior and deformation of He-charged (at 22 C) single crystals of PWA 1480E Ni-base superalloy were investigated using SEM and TEM techniques to observe the behavior of tensile fractures in notched single crystals with seven different crystal growth orientations: 100-line, 110-line, 111-line, 013-line, 112-line, 123-line, and 223-line. To identify the cleavage plane orientation, a stereoscopic technique, combined with the use of planar gamma-prime morphologies, was applied. It was found that gamma-prime particles were orderly and closely aligned with edges along the 100-line, 010-line, and 001-line-oriented directions of the gamma matrix. Different crystal growth orientations were found not to affect the morphology of gamma-prime particles. The accumulation of dislocations around gamma/gamma-prime interfaces formed strong barriers to subsequent dislocation movement and was the primary strengthening mechanism at room temperature.

Chen, P. S.↗
NASA NTRS1991

Computed stress fields in GaAs during vertical Bridgman growth

The thermoelastic stress field of GaAs crystals grown by the vertical Bridgman method has been approximated using a linear elastic, axisymmetric stress model. The model included the effects due to the thermal field and the gravitational field, as well as the interaction with the ampoule, but did not fully account for the elastic anisotropy of the crystal. Realistic thermal fields for different furnace temperatures and insulation zone thicknesses were computed with a similar model. The difference between the Von Mises stress and the critical resolved shear stress (CRSS) was used as a measure of the number of dislocations present. Different sets of growth parameters were examined to determine which produced the lowest amount of stress in the crystal. Results show that the crystal-ampoule interaction is the most important parameter in dislocation generation. In addition, for the same sticking boundary conditions, concave interfaces have lower stress than convex interfaces.

Rosch, William↗
NASA NTRS1990

Effects of radiation of InP cells epitaxially grown on Si and GaAs substrates

The properties of heteroepitaxial InP cells were determined both before and after 10-MeV proton irradiations. Numerical values, obtained for the diffusion and recombination components of the reverse saturation currents, were found to be consistent with the distribution of dislocations. The radiation resistance of the heteroepitaxial cells was significantly greater than that observed for n/p homoepitaxial InP cells. The carrier removal rate, obtained by C-V measurements, was 1800/cm for 10-MeV protons compared with 2.2/cm for 1-MeV electrons. The high carrier removal rate was found to have no significant effect on the cell's series resistance. It was concluded that the heteroepitaxial cell performance is dominated by the high dislocation density attributable to lattice constant mismatch. Although the efficiencies of the present cells are low, the recent achievement of 13.7 percent AM0 efficiencies using a GaAs substrate demonstrates the marked improvement that can be attained using more appropriate transition layers.

Weinberg, I.↗
NASA NTRS1990

Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

Metalorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimental results were simulated by using a PC-1D computer model. The effect of emitter parameter variation on the performance of n(+)/p/p(+) heteroepitaxial InP/GaAs solar cell was presented. The thinner and lighter doped emitters were observed to offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency with respect to dislocation density was studied. Heteroepitaxial cells with efficiencies similar to present day homojunction InP efficiencies (greaater than 16 percent AM0) were shown to be attainable if a dislocation density lower than 10(exp 6)/sq cm could be achieved. A realistic optimized design study yielded InP solar cells of over 22 percent AM0 efficiency at 25 C.

Jain, R. K.↗
NASA NTRS1991

Creep behavior of copper at intermediate temperatures. II - Surface microstructural observations. III - A comparison with theory

Three different types of microstructural slip features are noted to occur during the creep of Cu at 0.46-0.72 of absolute melting point. While single slip is associated with higher temperatures and lower stresses, complex wavy slip features are observed at higher temperatures and higher stresses as well as with increasing strains: suggesting the importance of cross-slip mechanisms. At lower temperatures and higher stresses the multiple-slip morphologies observed indicate that cross-slip mechanisms may control the creep of polycrystalline Cu only over a limited stress and temperature range. A phenomenological model is proposed which assumes that (1) cell boundaries within subgrains act as both sources of, and obstacles to, gliding dislocations, and (2) dislocation annihilation occurs at the cell boundaries by climb and cross-slip.

Raj, S. V.↗
NASA NTRS1992

Crustal deformation along the San Andreas, California

The goal is to achieve a better understanding of the regional and local deformation and crustal straining processes in western North America, particularly the effects of the San Andreas and nearby faults on the spatial and temporal crustal deformation behavior. Construction of theoretical models based on the mechanics of coupled elastic plate, viscoelastic foundation and large scale crack mechanics provide a rational basis for the interpretation of seismic and aseismic anomalies and expedite efforts in forecasting the stability of plate boundary deformation. Special focus is placed on the three dimensional time dependent surface deformation due to localized slippage in a elastic layer coupled to a visco-elastic substrate. The numerical analysis is based on a 3-D boundary element technique. Extension to visco-elastic coupling demands the derivation of 3-D time dependent Green's function. This method was applied to analyze the viscoelastic surface displacements due to a dislocated embedded patch. Surface uplift as a function of time and position are obtained. Comparisons between surface uplift for long and short dislocated patches are made.

Li, Victor C.↗
NASA NTRS1992

Environmental fatigue of an Al-Li-Cu alloy. Part 3: Modeling of crack tip hydrogen damage

Environmental fatigue crack propagation rates and microscopic damage modes in Al-Li-Cu alloy 2090 (Parts 1 and 2) are described by a crack tip process zone model based on hydrogen embrittlement. Da/dN sub ENV equates to discontinuous crack advance over a distance, delta a, determined by dislocation transport of dissolved hydrogen at plastic strains above a critical value; and to the number of load cycles, delta N, required to hydrogenate process zone trap sites that fracture according to a local hydrogen concentration-tensile stress criterion. Transgranular (100) cracking occurs for process zones smaller than the subgrain size, and due to lattice decohesion or hydride formation. Intersubgranular cracking dominates when the process zone encompasses one or more subgrains so that dislocation transport provides hydrogen to strong boundary trapping sites. Multi-sloped log da/dN-log delta K behavior is produced by process zone plastic strain-hydrogen-microstructure interactions, and is determined by the DK dependent rates and proportions of each parallel cracking mode. Absolute values of the exponents and the preexponential coefficients are not predictable; however, fractographic measurements theta sub i coupled with fatigue crack propagation data for alloy 2090 established that the process zone model correctly describes fatigue crack propagation kinetics. Crack surface films hinder hydrogen uptake and reduce da/dN and alter the proportions of each fatigue crack propagation mode.

Piascik, Robert S.↗
NASA NTRS1992

Hardening mechanisms in a dynamic strain aging alloy, Hastelloy X, during isothermal and thermomechanical cyclic deformation

The relative contributions of the hardening mechanisms in Hastelloy X during cyclic deformation were investigated by conducting isothermal cyclic deformation tests within a total strain range of +/-0.3 pct and at several temperatures and strain rates, and thermomechanical tests within several different temperature limits. The results of the TEM examinations and special constant structure tests showed that the precipitation on dislocations of Cr23C6 contributed to hardening, but only after sufficient time above 500 C. Solute drag alone produced very considerable cyclic hardening. Heat dislocation densities, peaking around 10 exp 11 per sq cm, were found to develop at temperatures producing the greatest cyclic hardening.

Miner, R. V.↗
NASA NTRS1992

Redistribution of Ti and Al in deuterium charged TiAl

The redistribution of titanium and aluminum in a single-phase TiAl alloy that has been exposed to a high pressure of deuterium gas at high temperature is studied. The microstructure in the as-received, uncharged condition consisted of single-phase gamma TiAl grains and a random distribution of precipitates. Precipitates were distributed throughout the matrix and along the grain boundaries. The chemistry of the precipitates varied considerably; some were rich in Al, while other were mostly Ti with some Si and Al. The dislocation density in most grains was low, although in a few grains a high dislocation density was observed. FCC deuterides with a lattice parameter of 0.45 nm form in a Ti-52.1Al-2.1Ta (at. pct) alloy after exposure to 1.38 MPa of deuterium gas at 650 C for 213 hr. The structure and lattice parameter are consistent with the formation of Ti(l)D2. The deuterides that form in this alloy are enriched in Ti and deficient in Al and Ta compared to the deuteride-free matrix. Regions of the matrix contiguous with the deuterides have a correspondingly enhanced aluminum and tantalum concentration.

Legzdina, D.↗
NASA NTRS1991

Radiation and temperature effects in heteroepitaxial and homoepitaxial InP cells

Heteroepitaxial (InP/GaAs) and homo-epitaxial (InP/InP) cells were irradiated by 1-MeV electrons and their performance, temperature dependencies and carrier removal rates determined. The radiation resistances of the InP/GaAs cells were significantly higher than that of the InP/InP cells. This was attributed to the high dislocation density present in the heteroepitaxial cells. In addition, the effects of dislocations in these latter cells were dominant in determining the temperature dependence of open-circuit voltage.

Weinberg, I.↗
NASA NTRS1993

A Modeling Investigation of Thermal and Strain Induced Recovery and Nonlinear Hardening in Potential Based Viscoplasticity

Specific forms for both the Gibb's and the complementary dissipation potentials were chosen such that a complete potential based multiaxial, isothermal, viscoplastic model was obtained. This model in general possesses three internal state variables (two scalars associated with dislocation density and one tensor associated with dislocation motion) both thermal and dynamic recovery mechanisms, and nonlinear kinematic hardening. This general model, although possessing associated flow and evolutionary laws, is shown to emulate three distinct classes of theories found in the literature, by modification of the driving threshold function F. A parametric study was performed on a specialized nondimensional multiaxial form containing only a single tensorial internal state variable (i.e., internal stress). The study was conducted with the idea of examining the impact of including a strain-induced recovery mechanism and the compliance operator, derived from the Gibb's potential, on the uniaxial and multiaxial response. One important finding was that inclusion of strain recovery provided the needed flexibility in modeling stress-strain and creep response of metals at low homologous temperatures, without adversely affecting the high temperature response. Furthermore, for nonproportional loading paths, the inclusion of the compliance operator had a significant influence on the multiaxial response, but had no influence on either uniaxial or proportional load histories.

Arnold, S. M.↗
NASA NTRS1993

Temperature dependence of protein solubility-determination, application to crystallization, and growth kinetics studies

A scintillation method was developed for determinations of the temperature dependence of the solubility, and of nucleation induction times of proteins, in 50-100 mu(l) volumes of solution. Solubility data for lysozyme and horse serum albumin were obtained for various combinations of pH and precipitant concentrations. These data and the nucleation induction information were used for dynamic crystallization control, that is, for the controlled separation of nucleation and growth stages. Individual lysozyme and horse serum albumin crystals were grown in 15-20 mu(l) solution volumes contained in x-ray capillaries. The morphology and kinetics of the growth and dissolution of lysozyme in aqueous solutions with 2.5 percent NaCl and at pH = 4.5 was studied in situ with a depth resolution of 300 A (4 unit cells) by high resolution optical microscopy and digital image processing. The bulk super- or under saturation, sigma, of the solution inside a closed growth cell was controlled by temperature. The growth habit was bound by (110) and (101) faces that grew through layer spreading, although with different growth rate dependencies on supersaturation/temperature. At sigma less than 10 (obtained at higher temperatures) growth was purely kinetic ally controlled, with impurity effects (macrostep formation and kinetic hindrance) becoming significant for sigma less than 2. At sigma greater than 10 (lower temperatures), anisotropies in the interfacial kinetics were more pronounced, with interfacial kinetics and bulk transport becoming equally important to the growth morphology. Growth rates were growth history dependent. The formation of striations (layers of irregularly incorporated solution) was unambiguously correlated with growth temperature variations. Etching exposed dislocations and various high-index faces whose growth morphologies were studied during return to the steady state growth form. Growth steps were observed to originate from two-dimensional nuclei or from outcrops of growth striations, and from dislocations that preferentially formed in growth sector boundaries.

Rosenberger, Franz↗