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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Analysis of Pull Force Test Results for Crimped Connections

Crimped electrical contacts are reliable when strict process controls are followed during manufacturing and accompanied by continuous process verification through pull force testing. Cable and wire harness assemblies’ standards are developed and refined over time to provide the minimum pull force that a crimp contact must meet before it breaks from the wire. However, in practice the failures occur at a much higher tensile strength than the minimum required. The first section of this paper reviewed 780 pull force test results provided by NASA Centers were collected and analyzed to determine how the data compares to NASA’s pre-existing requirements from the cable/harness standards NASA-STD-8739.4 and IPC/WHMA-A-620B-S. The measured tensile strength of most of the contact/conductor pairs (i.e. Contact/Wires or C/W) exceeded the minimum pull force values of NASA-STD-8739.4 and IPC/WHMA-A-620 standards by at least 100 %. The tensile strength samples of the C/W pairs values followed a normal distribution with an average tensile strength value that was at least 182 % of the minimum requirement, and all the samples analyzed passed the pull force testing. In addition, the 95 % confidence interval of the average tensile strength distributions for several C/W pairs was determined and plotted as error bars to show that there is good likelihood to observe C/W pair normal distribution with a 95 % confidence interval that will meet and surpass the standard requirements. The frequency of pull force testing can be problematic for projects because of the cost and availability of spare contacts for the destructive test. It could be possible to reduce the frequency of pull force testing if at the beginning of the production run, the conditions of the crimp tool and materials are verified, and the settings of the tool remain unchanged throughout the process. However, the project must evaluate the impact to risk from reducing the frequency of testing.

Crimped connections↗
NASA NTRS2021

Large-Scale CT Inspection of Feed-Through EMI Filters for Space Application

A type of Feed-Through Electromagnetic Interference (EMI) Filter incorporating two discoidal (ring-shaped) capacitors was selected for use in the Europa Clipper spacecraft propulsion systems. Parts reliability specialists were aware of historical problems with the attach materials used to provide mechanical support and electrical contact within these devices, so therefore a screening was desired to ensure the longevity and ruggedness of units intended for the space environment. CT X-ray, a technology which has become more widely available thanks to the compelling depth of information it offers, was selected as the inspection method of choice.

Bescup, John C↗
NASA NTRSDate not supplied

Designing the Imaging and Breadboard System for FBCE-TL Project

This presentation outlines the support work done on designing the imaging and breadboard system of the Transfer Line (TL) project, which is the third module for the Flow Boiling and Condensation Experiment (FBCE) operating in the Fluids Integrated Rack on-board the International Space Station (ISS). The goal of the FBCE is to serve as a facility for flow boiling and condensation investigating two-phase flow and heat transfer data in microgravity. The TL module aims use existing FBCE hardware to study cryogenic chilldown, a large component of cryogenic propellant tank transfer research. The TL test module will perform chilldown studies with normal-perfluorohexane (nPFH), a cryogenic simulant, flowing through a super-heated line, which is heated through the process of Joule-heating. SolidWorks and Creo were used to create electrically conductive pipe junctions that connect and seal several Indium Tin Oxide (ITO) coated sapphire tube sections together to allow for low leak probability fluid flow and circumferentially uniform electrical current density. It is necessary to understand and calculate the thermal expansion of the tubing sections such that the junctions would not leak at anticipated operating temperatures and pressures, would maintain electrical contact, and not crack the crystalline tubes. Optical imaging techniques were used to build an experimentally validated image remapping process for flight-like setups of cylindrical tubes. Then MATLAB was used to create an algorithm that distorts an image based on the refraction of light passing through the mediums we were imaging through to accurately visualize the cryogenic chilldown that is of scientific interest. This research will assist NASA to move forward with long-duration spaceflight missions where knowledge of efficient heat transfer processes becomes more critical.

imaging system↗
DOE OSTI2024

Redesigning Photoelectrodes So They Can Work in the Light and Dark

Unassisted photoelectrochemical (PEC) reactions, such as H2 generation and CO2 reduction, are limited by the durability of the immersed photoelectrode. Small band gap semiconductors, like Si, are efficient at utilizing a large portion of the solar spectrum but are not stable in aqueous environments without protection. While great strides have been made to improve stability under constant illumination, dark stability remains relatively unexamined and presents great challenges for durable PEC systems. Cathodic protection is an established electrochemical method for preventing metal electrode degradation in harsh conditions. Similar protection strategies cannot be applied to traditional two-terminal (2T) semiconductor photoelectrodes because of their inability to pass reverse bias current in the dark. New, three-terminal (3T) photovoltaic (PV) architectures introduce additional degrees of freedom in traditional 2T PEC operations by adding an extra electrical contact for an alternative low resistance path to protect the photoelectrode and drive electrochemical reactions, even in the dark. Here, we investigate bare 3T Si PV devices operating as photocathodes in aqueous methyl viologen electrolyte. The 3T architecture provides additional capabilities to PEC systems such as cathodic protection, the ability to drive reactions with or without illumination, and in situ switching between different operational modes. We show that 3T-based Si photocathodes maintain PEC activity after several hours of light/dark cycling. This work helps advance PEC use in real-world conditions where variable illumination must be considered.

cathodic protection↗
DOE OSTI2024

High temperature electrical property measurements of ceramics

Emerging applications in energy and aerospace systems require high quality data on the high temperature electrical properties of ceramics, particularly oxides, to guide material selection, design, and modeling. This presentation demonstrates the functionality of a specially designed sample fixture that enables electrical measurements to be conducted up to temperatures as high as 1600°C. Utilizing the mismatch in the coefficient of thermal expansion between two materials, a purely mechanical method for establishing electrical contact in the van der Pauw geometry is used to measure the bulk resistivity of ceramic materials. Measurements conducted on a number of common high temperature materials will be presented, including 20 mol % Gd-doped cerium oxide. Measurements are performed using multiple techniques and compared to literature values finding excellent agreement. The approach described in this work enables the van der Pauw method to be applied to many ceramic materials over a wide range of temperatures and environments.

Cann, David P.↗
DOE OSTI2024

Secondary zinc-manganese dioxide batteries for high power applications

In an embodiment, a secondary Zn—MnO 2 battery comprises a battery housing, a MnO 2 cathode, a Zn anode, and an electrolyte solution. The MnO 2 cathode, the Zn anode, and the electrolyte solution are disposed within the battery housing, and the MnO 2 cathode comprises a MnO 2 cathode mixture and a current collector. The MnO 2 cathode mixture is in electrical contact with at least a portion of an outer surface of the current collector, and the MnO 2 cathode has a porosity of from about 5 vol. % to about 90 vol. %, based on the total volume of the MnO 2 cathode mixture of the MnO 2 cathode.

Ingale, Nilesh↗
NASA NTRS1990

Deep-level dominated electrical characteristics of Au contacts on beta-SiC

Electrical characteristics of Au contacts on beta-SiC films, grown epitaxially on both nominal and off-axis (100) silicon substrates, are reported. An analysis of the logarithmic I-V plots of the Au/beta-SiC diodes revealed information pertaining to the deep states present in the materials. It was found that while the beta-SiC films grown on nominally (100) oriented substrates show the presence of two deep levels located between 0.26 and 0.38 eV below the conduction bandedge, the beta-SiC films deposited on off-axis substrates have only one deep level, located about 0.49 eV below the conduction bandedge for the 2-deg off (100) substrates and 0.57 eV for the 4-deg off (100) substrates. The presence of the shallower deep states in the beta-SiC films grown on nominal (100) substrates is attributed to the electrical activity of antiphase domain boundaries.

Das, K.↗
DOE OSTI2024

Fabrication and Performance Evaluation of Double-Sided Copper Nanowire Arrays as Thermal and Electrical Interfacial Layers

Reducing contact interface thermal and electrical resistances is in great demand across various industries, particularly in the semiconductor industry. This study introduces an approach using double-sided copper nanowire (Cu NW) arrays on copper sheets as both thermal and electrical interfacial layers, designed to effectively accommodate the topographical inconsistencies between contact surfaces. Further, experimental outcomes reveal a significant reduction in thermal contact resistance (TCR), with a value of 2.5 mm 2 K W –1 , thereby exceeding the efficiency of reported nanostructural thermal interface materials (TIMs). Additionally, when utilized as an electrical interfacial layer, these double-sided Cu NWs arrays dramatically reduced electrical contact resistance (ECR), outperforming traditional conductive grease in applications necessitating separable bonding, though showing comparable performance to costly silver-based conductive epoxies required for permanent, inseparable bonds. The promising results of the double-sided Cu NWs arrays in reducing both TCR and ECR, confirmed by finite element simulation, highlight their substantial potential in advancing TIMs and electrical interconnection applications across various sectors.

42 ENGINEERING↗
NASA NTRS1983

Electrical characteristics of amorphous iron-tungsten contacts on silicon

The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities of 1 x 10 to the -7th and 2.8 x 10 to the -6th were measured on n(+) and p(+) silicon, respectively. These values remain constant after thermal treatment up to at least 500 C. A barrier height of 0.61 V was measured on n-type silicon.

Finetti, M.↗
NASA NTRS1989

Strong, Low-Resistance Bonds For AMTEC Electrodes

Heat of operating cell helps form contacts. Strong, low-electrical-resistance contacts between elements of current-collection grid in alkali-metal thermoelectric converter (AMTEC) cell obtained by simple in-place thermocompression bonding. Bonds formed between porous electrode of molybdenum film, nickel or cobalt strips overlying film, and molybdenum tie wires running at right angles to strips. Bonding method also works on films of tungsten or tungsten/platinum.

Williams, Roger M.↗
NASA NTRS1994

Au/Zn Contacts to rho-InP: Electrical and Metallurgical Characteristics and the Relationship Between Them

The metallurgical and electrical behavior of Au/Zn contacting metallization on p-type InP was investigated as a function of the Zn content in the metallization. It was found that ohmic behavior can be achieved with Zn concentrations as small as 0.05 atomic percent Zn. For Zn concentrations between 0.1 and 36 at. percent, the contact resistivity rho(sub c) was found to be independent of the Zn content. For low Zn concentrations the realization of ohmic behavior was found to require the growth of the compound Au2P3 at the metal-InP interface. The magnitude of rho(sub c) is shown to be very sensitive to the growth rate of the interfacial Au2P3 layer. The possibility of exploiting this sensitivity to provide low resistance contacts while avoiding the semiconductor structural damage that is normally attendant to contact formation is discussed.

Weizer, Victor G.↗
NASA NTRS1984

Electrical characteristics of amorphous molybdenum-nickel contacts to silicon

The electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. percent Mo). The contact resistivity on both p(+) and n(+) Si is in the 0.00000 ohm sq cm range. The barrier height for as-deposited samples varies between phi-bp = 0.47-0.42 V on p-type Si and between phi-bn = 0.63-0.68 V on n-type Si, as the composition of the amorphous layer goes from Ni-rich to Mo-rich. The sum phi-bp + phi-bn always equals 1.12 V, within experimental error. After thermal treatment at 500 C for 1/2 h, the contact resistivity changes by a factor of two or less, while the barrier height changes by at most approximately 0.05 V. In light of these results, the amorphous Mo-Ni film makes good ohmic contacts to silicon.

Kung, K. T.-Y.↗
NASA NTRS1993

Low resistance silver contacts to indium phosphide - Electrical and metallurgical considerations

The electrical and metallurgical behavior of the Ag-InP contact system has been investigated. Specific contact resistivity (Rc) values in the low 10 exp -6 Ohm sq cm range are readily achieved on n-InP (Si: 1.7 x 10 exp 18/cu cm) after sintering at 400 C for several minutes. The low Rc values, however, are shown to be accompanied by dissolution of InP into the metallization, resulting in device degradation. An analysis of the sinter-induced metallurgical interactions shows this system to be similar to the well-characterized Au-InP system, albeit with fundamental differences. The similarities include the dissociative diffusion of In, the reaction-suppressing effect of SiO2 capping, and especially, the formation of a phosphide layer at the metal-InP interface. The low post-sinter Rc values in the Ag-InP system may be due to the presence of a AgP2 layer at the metal-InP interface; low values of Rc can be achieved without incurring device degrading metallurgical interactions by introducing a thin AgP2 layer between the InP and the current carrying metallization.

Weizer, Victor G.↗